Datasheet RFP2N08, RFP2N10 Datasheet (Intersil)

July 1998

Semiconductor

RFP2N08,

RFP2N10

2A, 80V and 100V, 1.05 Ohm,

N-Channel Power MOSFETs

Features

• 2A, 80V and 100V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

1.05Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFP2N08 TO-220AB RFP2N08
RFP2N10 TO-220AB RFP2N10

NOTE: When ordering, use entire part number.

Description

These are N-channel enhancement mode silicon gate power
field effect transistors designed for applications such as
switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA09282.

Symbol

D

G

S

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 2883.1

RFP2N08, RFP2N10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP2N08 RFP2N10 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

80 100 V
80 100 V

22A
55A

±20 ±20 V

25 25 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

ID = 250µA, VGS = 0

DSS

RFP2N10 100 - - V
RFP2N08 80 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

θJC

= VDS, ID = 250µA (Figure 8) 2 - 4 V
VDS = Rated BV
V

= 0.8 x Rated BV

DS

, TC = 25oC--1µA

DSS

, TC = 125oC- - 25 µA

DSS

VGS = ±20V, VDS = 0 - - ±100 nA

= 2A, VGS = 10V (Figures 6, 7) - - 1.05 Ω
= 2A, VGS = 10V - - 2.1 V

≈ 1A, V

RL = 25Ω, VGS= 10V
(Figures 10, 11, 12)

= 50V, RG = 50Ω,

DD

-1725ns

-3045ns

-3045ns

-1725ns

VGS = 0V, VDS = 25V, f =1MHz
(Figure 9)

- - 200 pF

- - 80 pF

- - 25 pF

--5

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

ISD = 2A - 1.4 V
ISD = 2A, dISD/dt = 50A/µs - 100 - ns

rr

5-2

RFP2N08, RFP2N10

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

Unless otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

10

OPERATION IN THIS AREA
LIMITED BY r

1

DS(ON)

TJ = MAX RATED
T

C

= 25oC

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

, DRAIN CURRENT (A)

0.6

D

I

0.4

0.2
0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

PULSE DURATION = 80µs

VGS = 10V

VGS = 9V

VGS = 20V

2.5
VGS = 8V

2.0

TC = 25oC

VGS = 7V

0.10

, DRAIN CURRENT (A)

D

I

0.01
1 10 100 1000

VDS, DRAIN TO SOURCE VOLTAGE (V)

RFP2N08

RFP2N010

1A

, DRAIN CURRENT (A)

D

I

012345678910

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

VDS= 10V
PULSE DURATION = 250µs

2.5

2.0

1.5

1.0

, DRAIN TO SOURCE CURRENT (A)

0.5

DS(ON)

I

02468

TC= -40oC

TC= 25oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

TC = 125oC

TC= 125oC

TC = 25oC

TC = 40oC

10

1.4
TC = 125oC

1.2

1.0

0.8

0.6

RESISTANCE (Ω)

, DRAIN TO SOURCE ON

0.4

DS(ON)

r

0.2

VGS = 10V
PULSE DURATION = 250µs

0 0.5 1.0 1.5 2.0 2.5

I

, DRAIN CURRENT (A)

D

VGS = 6V

VGS = 5V

VGS = 4V

TC = 25oC

TC = -40oC

FIGURE 5. TRANSER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESIST ANCE vs GATE

VOLTAGE AND DRAIN CURRENT

5-3

RFP2N08, RFP2N10

Typical Performance Curves

2.0
ID = 2A, VGS = 10V

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150 200
T

, JUNCTION TEMPERATURE (oC)

J

Unless otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

240

200

160

120

80

C, CAPACITANCE (pF)

40

0

0 10203040506070

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

ISS

C

OSS

C

RSS

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GS

1.4
VGS = VDS, ID = 250µA

1.2

1.0

VOLTAGE

0.8

NORMALIZED GATE THRESHOLD

0.6

-50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. NORMALIZED GATE THRESHOLD V OLTA GE vs

JUNCTION TEMPERATURE

100

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

BV

V

20

DSS

DDD =VDSS

0.75 V

0.50 V

0.25 V

I

G(REF)

I

G(ACT)

I

G(REF)

DSS
DSS
DSS

GATE

TO

SOURCE

VOLTAGE

RL = 50Ω

= 0.095mA

V

= 10V

GS

TIME (µs)

0.75 V

0.50 V

0.25 V

V

DSS
DSS
DSS

DSS

= V

DSS

I

G(REF)

80

I

G(ACT)

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WA VEFORMS FOR

CONSTANT GATE CURRENT

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

5-4