Datasheet RFM18N08, RFM18N10, RFP18N08, RFP18N10 Datasheet (Intersil)

Semiconductor

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September 1998

RFM18N08, RFM18N10,

RFP18N08, RFP18N10

18A, 80V and 100V, 0.100 Ohm,

N-Channel Power MOSFETs

[ /Title
(RFM18
N08,
RFM18
N10,
RFP18N
08,
RFP18N

10)
Subject

(18A,
80V and
100V,

0.1 Ohm,

N-Chan­nel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FETs,
TO­204AA,
TO­220AB)

Creator

()

DOCIN

FO pdf­mark

Features

• 18A, 80V and 100V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.100Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFM18N08 TO-204AA RFM18N08
RFM18N10 TO-204AA RFM18N10
RFP18N08 TO-220AB RFP18N08
RFP18N10 TO-220AB RFP18N10

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA17421.

Symbol

D

G

S

SOURCE

DRAIN

(TAB)

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1446.1

RFM18N08, RFM18N10, RFP18N08, RFP18N10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM18N08 RFM18N10 RFP18N08 RFP18N10 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . V

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

D

DM

GS

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

80 100 80 100 V
80 100 80 100 V
18

45

18
45

18

45
±20 ±20 ±20 ±20 V
100

0.8

100

0.8

75

0.6

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300

L

260

300
260

300
260

18
45

75

0.6

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFM18N08, RFP18N08 80 - - V
RFM18N10, RFP18N10 100 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

DSSVDS

GSSVGS

r

f

ISSVDS

OSS

RSS

θJC

= VDS, ID = 250µA, (Figure 8) 2 - 4 V
= Rated BV

VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS= 0V, TC = 125oC- - 25 µA

DSS

= ±20V, VDS = 0V - - ±100 nA
= 18A, VGS = 10V, (Figures 6, 7) - - 0.100 Ω
= 18A, VGS = 10V - - 1.8 V

= 50V, I

RL = 5.5Ω
(Figures 10, 11, 12)

≈ 9A, R

D

= 50Ω, VGS = 10V,

G

-6090ns

- 300 450 ns

- 150 225 ns

- 150 225 ns

= 25V, VGS = 0V, f = 1MHz,

(Figure 9)

- - 1700 pF

- - 750 pF

- - 300 pF
RFM18N08, RFM18N10 - - 1.25oC/W
RFP18N08, RFP18N10 - - 1.67oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse test: width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

ISD = 9A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 150 - ns

5-2

RFM18N08, RFM18N10, RFP18N08, RFP18N10

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

100

10

OPERATION IN
THIS AREA MAY BE
LIMITED BY r

1

, DRAIN CURRENT

D

I

0.1
1 10 100 1000

V

DC OPERA

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

DS

TJ = MAX RATED

TC = 25oC
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE

TION

20
18
16
14
12
10

8
6

, DRAIN CURRENT (A)

D

I

4
2
0

25 50 75 100 125 150

RFP18N08,
RFP18N10

, CASE TEMPERATURE (oC)

T

C

RFM18N08,
RFM18N10

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

35

30

25

20

15

, DRAIN CURRENT (A)

10

D

I

5

0

01234567

VG = 10VVG = 20V

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

T

C

V

, DRAIN TO SOURCE (V)

DS

= 25oC

VG = 8V

VG = 7V

VG = 6V

VG = 5V
VG = 4V

8

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

40

VDS = 10V
PULSE DURATION = 80µs

35

DUTY CYCLE ≤ 2%

= 25oC

T

C

30

25

20

15

10

, DRAIN TO SOURCE CURRENT

5

DS(ON)

I

0

0 2341 5678910

V

125oC

, GATE TO SOURCE VOLTAGE (V)

GS

25oC

-40oC

125oC-40oC

0.14

0.12

0.10

0.08

0.06

, DRAIN TO SOURCE

0.04

ON RESISTANCE (Ω)

DS(ON)

r

0.02

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

T

= 25oC

C

= 10V

V

GS

0

01020303551525

, DRAIN CURRENT (A)

I

D

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs

DRAIN CURRENT

5-3

125oC

25oC

-40oC

RFM18N08, RFM18N10, RFP18N08, RFP18N10

Typical Performance Curves

2.0
V

= 10V

GS

ID = 18A
PULSE DURATION = 80µs

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150 200
T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2400

VGS = 0V, f = 1MHz

= CGS + C

C

2000

1600

1200

800

C, CAPACITANCE (pF)

400

0

0102030405060

VDS, DRAIN TO SOURCE VOLTAGE (V)

C
C

ISS
RSS
OSS

= C

GD

≈ CDS + C

1.4
VGS = V

DS

ID = 250µA

1.2

1

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.6

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTA GE vs

JUNCTION TEMPERATURE

100

GD

VDD = BV

GD

C

ISS

C

OSS

C

RSS

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

20

DSS

0.75BV

0.50BV

0.25BV

DRAIN SOURCE VOLTAGE

I

G(REF)

I

G(ACT)

GATE

SOURCE

VOLTAGE

DSS

DSS
DSS

t, TIME (µs)

RL = 5.56Ω

I

G(REF)

= 10V

V

GS

VDD = BV

80

= 1mA

DSS

I

G(REF)

I

G(ACT)

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

5-4

RFM18N08, RFM18N10, RFP18N08, RFP18N10

Test Circuits and Waveforms

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

0

r

90%

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

V

DS

D

S

CURRENT

I

D

SAMPLING

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

DUT

V

DS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

0

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

CURRENT

REGULATOR

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

90%

10%

FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS

5-5