Page 1
RFP15N08L
Data Sheet June 1999
15A, 80V, 0.140 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP15N08L is an N-Channel enhancement mode
silicon gate power field effecttransistorspecificallydesigned
for use with logic level(5volt) driving sources in applications
such as programmable controllers, automotive switching,
and solenoid drivers. This performance is accomplished
through a special gate oxide design which providesfullrated
conduction at gate biases in the 3-5 volt range, thereby
facilitating true on-off power control from logic circuit supply
voltages.
Formerly developmental type TA09804.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP15N08L TO-220AB RFP15N08L
NOTE: When ordering, use the entire part number.
File Number
Features
• 15A, 80V
•r
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly from Q-MOS, N-MOS,
TTL Circuits
• SOA is Power Dissipation Limited
• 175
• Logic Level Gate
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.140Ω
DS(ON)
o
C Rated Junction Temperature
Components to PC Boards”
Symbol
D
2840.1
Packaging
G
S
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-234
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
RFP15N08L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP15N08L UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
DGR
GS
D
DM
D
Derated above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
80 V
80 V
±10V
15 A
40 A
72
0.48
-55 to 175
300
260
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
DSSID
DSS
= 1mA, VGS = 0V 80 - - V
= VDS, ID = 1mA 1 - 2.5 V
TC = 25oC, VDS = 65V, VGS = 0V - - 1 µA
TC = 125oC, VDS = 65V, VGS = 0V - - 50 µA
Gate to Source Leakage Current I
Drain to Source On Voltage V
GSS
DS(ON)ID
VGS = 10V, VDS = 0V - - 100 nA
= 7.5A, VGS = 5V - - 1.05 V
ID = 15A, VGS = 5V - - 3.0 V
Drain to Source On Resistance (Note 2) r
Forward Transconductance V
Turn-On Delay Time t
DS(ON)ID
(plateau)
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Gate Charge at 5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
r
f
g(5)
g(TH)
θJC
= 7.5A, VGS = 5V - - 0.140 Ω
VDS = 15V, ID = 15A - - 4.5 V
VDD = 40V, ID = 7.5A, RGS = 6.25Ω,
VGS = 5V
- - 40 ns
- - 325 ns
- - 325 ns
- - 325 ns
= 0-10V VDD = 64V,
- - 80 nC
ID = 15A,
VGS = 0-5V - - 45 nC
RL = 4.27Ω
VGS = 0-1V - - 3 nC
- - 2.083oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
Diode Reverse Recovery Time t
NOTES:
2. Pulsed: pulse duration = ≤ 300µs maximum, duty cycle = ≤ 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
6-235
ISD = 7.5A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 225 - ns
rr
Page 3
RFP15N08L
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE
TEMPERATURE
40
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5% MAX
= 25oC
T
C
30
20
10
, DRAIN TO SOURCE CURRENT (A)
DS
I
0
012345
VGS = 10V
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
VGS = 7.5V
V
= 5V
GS
V
= 4.5V
GS
= 4V
V
GS
VGS = 3.5V
V
= 3V
GS
V
= 2.5V
GS
= 2V
V
GS
100
ID MAX CONTINUOUS
10
OPERATION IN
THIS AREA IS
LIMITED BY r
1
, DRAIN CURRENT (A)
D
I
0
1 10 100 1000
DC OPERA
TION
DS(ON)
, DRAIN SOURCE VOLTAGE (V)
V
DS
T
= 25oC
C
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
16
VDS= 10V
14
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5% MAX
12
10
8
6
4
, DRAIN TO SOURCE CURRENT
2
DS
I
0
01 23 45
125oC
V
GS
-40oC
-40oC
, GATE TO SOURCE VOLTAGE (V)
125oC
25oC
FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS
0.3
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5% MAX
0.2
TC = 125oC
, DRAIN TO SOURCE
0.1
ON RESISTANCE (Ω)
DS(ON)
r
0
0246810121416
I
, DRAIN TO SOURCE CURRENT (A)
D
25oC
-40oC
FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
2.0
VGS = 10V, ID = 15A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1
ON RESISTANCE
0.5
NORMALIZED DRAIN TO SOURCE
0
-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)
T
J
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
6-236
Page 4
RFP15N08L
Typical Performance Curves
1.4
VGS = V
DS
ID = 250µA
1.2
1
VOLTAGE
0.8
NORMALIZED GATE THRESHOLD
0.6
-50 0 50 100 150 200
T
, JUNCTION TEMPERATURE (oC)
J
Unless Otherwise Specified (Continued)
FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
60
BV
DSS
45
30
15
DRAIN TO SOURCE VOLTAGE (V)
0
VDD = BV
IG (REF)
20
I
G
(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
1600
1400
1200
1000
800
600
C, CAPACITANCE (pF)
400
200
FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
RL = 4Ω
IG(REF) = 0.5mA
= 5V
V
GS
GATE SOURCE
VOLTAGE
DSS
DSS
DSS
VDD = BV
DSS
0.75BV
0.50BV
0.25BV
DRAIN SOURCE VOLTAGE
t, TIME (µs)
VGS = 0V, f = 1MHz
C
= CGS + C
ISS
C
= C
RSS
C
≈ CDS + C
OSS
C
ISS
C
OSS
C
RSS
0
0 1020304050
DSS
I
(REF)
G
80
(ACT)
I
G
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
10
8
6
4
2
GATE TO SOURCE VOLTAGE (V)
0
GD
GD
GD
Test Circuits and Waveforms
R
G
V
GS
FIGURE 10. SWITCHING TIME TEST CIRCUIT FIGURE 11. RESISTIVE SWITCHING WAVEFORMS
6-237
t
ON
t
d(ON)
t
R
L
+
V
DD
-
DUT
V
DS
0
V
GS
0
90%
10%
r
10%
50%
PULSE WIDTH
t
d(OFF)
90%
t
OFF
50%
t
f
10%
90%
Page 5
RFP15N08L
Test Circuits and Waveforms
V
DS
V
GS
I
G(REF)
FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS
(Continued)
R
L
DUT
V
DD
+
V
DD
-
VGS= 1V
0
I
G(REF)
0
V
GS
Q
Q
g(TH)
V
g(5)
DS
Q
g(TOT)
VGS= 10V
VGS= 5V
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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6-238
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