Datasheet RFP15N06L Datasheet (Intersil)

RFP15N05L, RFP15N06L

Data Sheet July 1999

15A, 50V and 60V, 0.140 Ohm, Logic Level
N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA0522.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP15N05L TO-220AB RFP15N05L
RFP15N06L TO-220AB RFP15N06L

NOTE: When ordering, use the entire part number.

File Number

Features

• 15A, 50V and 60V

•r

• Design Optimized for 5V Gate Drives

• Can be Driven from QMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.140Ω

DS(ON)

Components to PC Boards”

Symbol

D

1558.3

Packaging

DRAIN

(TAB)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

G

S

6-229

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP15N05L, RFP15N06L

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP15N05L RFP15N06L UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

D

DM

GS

D

Above TC = 25oC, Derate Linearly. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 60 V
50 60 V
15

40

15
40

±10 ±10 V

60

0.48

60

0.48

-55 to 150 -55 to 150

300
260

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFP15N05L 50 - - V

RFP15N06L 60 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA (Figure 7) 1 - 2 V
VDS = 48V, VDS = 50V - - 1 µA
VDS = 48V, VDS = 50V TC = 125oC--50µA

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Input Capacitance C

GSS

ISS

VGS = ±10V, VDS = 0V - - 100 nA

= 15A, VGS = 5V (Figures 5, 6) - - 0.140 Ω

VDS = 25V, VGS = 0V, f = 1MHz

- - 900 pF

(Figure 8)

Output Capacitance C
Reverse-Transfer Capacitance C
Turn-On Delay Time t

OSS

RSS

d(ON)

VDD = 30V, ID = 7.5A, RG = 6.25Ω

- - 450 pF

- - 200 pF

-1640ns

(Figures 10, 11)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t

R

r

f

θJC

VGS = 5V - 225 325 ns
RFP15N05L, RFP15N06L - - 2.083oC/W

- 250 325 ns

- 200 325 ns

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

ISD = 7.5A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 225 - ns

rr

NOTE:

2. Pulsed: pulse duration = ≤ 300µs maximum, duty cycle = ≤ 2%.

3. Repititive rating: pulse width limited by maximum junction temperature.

6-230

RFP15N05L, RFP15N06L

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

40

PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5% MAX

= 25oC

T

C

30

20

10

, DRAIN TO SOURCE CURRENT (A)

DS

I

0

012345

VGS = 10V

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

VGS = 7.5V

V

= 5V

GS

V

= 4.5V

GS

= 4V

V

GS

VGS = 3.5V
V

= 3V

GS

V

= 2.5V

GS

= 2V

V

GS

100

ID MAX CONTINUOUS

10

OPERATION IN
THIS AREA IS
LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

0

1 10 100 1000

DC OPERA

TION

DS(ON)

RFP15N05L

, DRAIN SOURCE VOLTAGE (V)

V

DS

T

= 25oC

C

CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE

RFP15N06L

FIGURE 2. FORWARD BIAS SAFE OPERATING AREA

16

VDS= 10V

14

PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5% MAX

12

10

8

6

4

, DRAIN TO SOURCE CURRENT

2

DS

I

0

01 2345

125oC

V

GS

-40oC

-40oC

, GATE TO SOURCE VOLTAGE (V)

125oC

25oC

FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS

0.3
VGS = 5V

PULSE DURATION = 80µs
DUTY CYCLE ≤ 0.5% MAX

0.2

TC = 125oC

, DRAIN TO SOURCE

0.1

ON RESISTANCE (Ω)

DS(ON)

r

0

0246810121416

I

, DRAIN TO SOURCE CURRENT (A)

D

25oC

-40oC

FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

2.0
VGS = 10V, ID = 15A

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

1

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 6. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

6-231

RFP15N05L, RFP15N06L

Typical Performance Curves

1.4
VGS = V

DS

ID = 250µA

1.2

1

VOLTAGE

0.8

NORMALIZED GATE THRESHOLD

0.6

-50 0 50 100 150 200
T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED GATETHRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

60

BV

DSS

45

30

15

DRAIN TO SOURCE VOLTAGE (V)

0

VDD = BV

IG (REF)

20

I

G

(ACT)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

1600

1400

1200

1000

800

600

C, CAPACITANCE (pF)

400

200

FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

RL = 4Ω

IG(REF) = 0.5mA

= 5V

V

GS

GATE SOURCE

VOLTAGE

DSS
DSS
DSS

VDD = BV

DSS

0.75BV

0.50BV

0.25BV

DRAIN SOURCE VOLTAGE

t, TIME (µs)

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

C

≈ CDS + C

OSS

C

ISS

C

OSS

C

RSS

0

0 1020304050

DSS

I

(REF)

G

80

(ACT)

I

G

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

10

8

6

4

2

GATE TO SOURCE VOLTAGE (V)

0

GD

GD

GD

Test Circuits and Waveforms

R

G

V

GS

FIGURE 10. SWITCHING TIME TEST CIRCUIT FIGURE 11. RESISTIVE SWITCHING WAVEFORMS

6-232

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

10%

0

r

90%

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

10%

90%

RFP15N05L, RFP15N06L

Test Circuits and Waveforms

V

DS

V

GS

I

G(REF)

FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS

(Continued)

R

L

DUT

V

DD

+

V

DD

-

VGS= 1V

0

I

G(REF)

0

V

GS

Q

Q

g(TH)

V

g(5)

DS

Q

g(TOT)

VGS= 10V

VGS= 5V

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Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished b y Intersil is believed to be accurate and
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