Datasheet RFP12P08, RFP12P10 Datasheet (Intersil)

RFP12P08, RFP12P10

Data Sheet June 1999

12A, 80V and 100V, 0.300 Ohm, P-Channel
Power MOSFETs

The RFP12P08, and RFP12P10 are P-Channel
enhancement mode silicon gate powerfieldeffecttransistors
designed for applications such as switching regulators,
switchingconvertors, motor drivers, relaydrivers,anddrivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.

Formerly developmental type TA17511.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP12P08 TO-220AB RFP12P08
RFP12P10 TO-220AB RFP12P10

NOTE: When ordering, include the entire part number.

File Number

Features

• 12A, 80V and 100V

•r

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.300Ω

Components to PC Boards”

Symbol

D

G

1495.2

Packaging

DRAIN

(TAB)

TO-220AB

SOURCE

DRAIN

GATE

S

4-161

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999.

RFP12P08, RFP12P10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP12P08 RFP12P10 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

-80 -100 V

-80 -100 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

12 12 A
30 30 A

±20 ±20 V

75 75 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0

RFP12P08 -80 - - V

RFP12P10 -100 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA -2--4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS= 0V - - 1 µA

DSS

, VGS= 0V,

DSS

TC = 125oC--25µA

Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R

GSS

ISS
OSS
RSS

θ

VGS = ±20V, VDS = 0 - - ±100 nA

= 12A, VGS = -10V - - -3.6 V
= 12A, VGS = -10V, (Figures 6, 7) - - 0.300 Ω

≈ 12A, V

RG=50Ω, RL= 4.1Ω, VGS = -10V

r

(Figure 10)

DD

= 50V,

-1860 ns

- 90 175 ns

- 144 275 ns

f

VGS = 0V, VDS = -25V, f = 1MHz
(Figure 9)

- 94 175 ns

- - 1500 pF

- - 700 pF

- - 300 pF

RFP12P08, RFP12P10 - - 1.67

JC

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width = ≤ 300µs Max, Duty Cycle ≤ 2%

3. Repetitive rating: pulse width limited by maximum junction temperature.

4-162

ISD = -12A - - 1.4 V
ISD = -12A, dISD/dt = 100A/µs - 200 - ns

Typical Performance Curves

RFP12P08, RFP12P10

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

100

OPERATION IN THIS AREA
LIMITED BY r

ID MAX CONTINUOUS

10

1

, DRAIN CURRENT (A)

D

I

0.1
1 10 100 1000

DS(ON)

DC

RFP12P08

RFP12P10

VDS, DRAIN TO SOURCE (V)

TC = 25oC

TJ = MAX RATED

-14

-13

-12

-11

-10

-9

-8

-7

-6

-5

-4

, DRAIN CURRENT (A)

D

I

-3

-2

-1
0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

40

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T

= 25oC

C

30

20

DRAIN CURRENT (A)

10

D,

I

0

0-2-4

VGS = -20V

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = -10V

VGS = -3V

-6 -8 -10

= -9V

V

GS

VGS = -8V

VGS = -7V

VGS = -6V

VGS = -5V
VGS = -4V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

20

VDS= -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

16

12

8

4

DRAIN TO SOURCE CURRENT (A)

DS(ON),

I

125oC

0

0-2 -4 -6 -7

-3 -5 -8
GATE TO SOURCE VOLTAGE (V)

V

GS,

-40oC

-40oC

25oC

125oC

0.4
VGS = -10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

0.3

0.2

RESISTANCE (Ω)

0.1

DRAIN TO SOURCE ON

0

02 8 12 20

4 6 10 14

ID,DRAIN CURRENT (A)

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCEvs GATE

VOLTAGE AND DRAIN CURRENT

4-163

125oC

25oC

o

-40

C

1816

RFP12P08, RFP12P10

Typical Performance Curves

2.0
ID= 12A, VGS = -10V

(Continued)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50

0

JUNCTION TEMPERATURE (oC)

T

J,

50 100 150

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2400

2000

F)

P

1600

1200

800

C, CAPACITANCE (

400

0

01020304050

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

ISS

C

OSS

C

RSS

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GD

1.3
ID= 250µA

VDS = V

1.2

GS

1.1

1.0

0.9

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.7

0.6

-50 0 50 100
JUNCTION TEMPERATURE (oC)

T

J,

FIGURE 8. NORMALIZED GATETHRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

100

V

DSS
DSS
DSS

DD

= BV

I

G(REF)

I

DSS

G(ACT)

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD= BV

DSS

I

G(REF)

20 80

I

G(ACT)

GATE

SOURCE

VOLTAGE
RL = 8.3

I

G(REF)

V

GS

0.75BV

DSS

0.50BV

DSS

0.25BV

DSS

DRAIN SOURCE

VOLTAGE

t, TIME (µs)

= 0.92mA
= -10V

0.75BV

0.50BV

0.25BV

NOTE: Refer to Intersil Application Notes AN7254 and AN7260

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

150

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

Test Circuits and Waveforms

DUT

R

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

G

4-164

t

ON

t

d(ON)

t

R

L

-

V

DD

+

0

V

DS

V

GS

0

10%

r

10%

90%

50%

t

d(OFF)

t

OFF

50%

90%

t

f

10%

PULSE WIDTH

90%

RFP12P08, RFP12P10

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