Datasheet RFM12N08, RFM12N10, RFP12N08, RFP12N10 Datasheet (Intersil)

Semiconductor

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j

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RFM12N08, RFM12N10, RFP12N08, RFP12N10

[ /Title
(RFM12
N08,
RFM12
N10,
RFP12
N08,
RFP12
N10)

Sub-

ect
(12A,
80Vand
100V,

0.2
Ohm,
N-Chan­nel
Power
MOS­FETs)

Author
()

Key­words
(Harris
Semi­conduc­tor, N­Chan­nel
Power
MOS­FETs,
TO­204AA,
TO­220AB)

Cre-

Data Sheet

12A, 80V and 100V, 0.200 Ohm, N-Channel
Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA09594.

Ordering Information

PART NUMBER PACKAGE BRAND

RFM12N08 TO-204AA RFM12N08
RFM12N10 TO-204AA RFM12N10
RFP12N08 TO-220AB RFP12N08
RFP12N10 TO-220AB RFP12N10

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

October 1998 File Number 1386.2

Features

• 12A, 80V and 100V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.200Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

(TAB)

DRAIN

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

RFM12N08, RFM12N10, RFP12N08, RFP12N10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM12N08 RFM12N10 RFP12N08 RFP12N10 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

D

DM

GS

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

80 100 80 100 V
80 100 80 100 V
12

30

12
30

12
30

12
30

±20 ±20 ±20 ±20 V

75

0.6

75

0.6

60

0.48

60

0.48

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

RFM12N08, RFP12N08

DSSID

= 250µA, VGS = 0V

80 - - V

RFM12N10, EFP12N10 100 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

θJC

= VDS, ID = 250µA (Figure 8) 2 - 4 V

VDS = Rated BV

DSS,VGS

VDS= 0.8x Rated BV

= 0V - - 1 µA

DSS,TC

= 125oC- - 25 µA

VGS = ±20V, VDS = 0V - - ±100 nA

= 12A, VGS = 10V (Figures 6, 7) - - 0.200 Ω
= 12A, VGS = 10V - - 2.4 V

= 50V, ID = 6A, RG = 50Ω,
VGS = 10V, RL = 8Ω,
(Figures 10, 11, 12)

-4570ns

- 250 375 ns

- 85 130 ns

- 100 150 ns

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 9)

- - 850 pF

- - 300 pF

- - 150 pF
RFM12N08, RFM12N10 - - 1.67
RFP12N08, RFP12N10 - - 2.083

o

C/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Voltage (Note 2) V
Reverse Recovery Time t

SD

rr

NOTE:

2. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

2

ISD = 6A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 150 - ns

RFM12N08, RFM12N10, RFP12N08, RFP12N10

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

100

TC = 25oC

ID (MAX)
CONTINUOUS

10

OPERATION IN

THIS AREA MAY BE

LIMITED BY r

1

V

, DRAIN CURRENT (A)

D

I

0

1 10 100 1000

(MAX) 80V

DSS

RFM12N08, RFP12N08
V

(MAX) 100V

DSS

RFM12N10, RFP12N10

V

DS

DC OPERATION

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

14

12

RFM12N08, RFM12N10

10

RFP12N08, RFP12N10

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUMCONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

16

VGS = 20V

12

8

, DRAIN CURRENT (A)

4

D

I

0

024 6 810

VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

= 25oC

T

C

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 9V

VGS = 8V

VGS = 7V

VGS = 6V

VGS = 5V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

16

VDS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

12

TC = -40oC

8

TC = 125oC

4

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

TC = 25oC

0

2 4 6 8 10 12

V

, GATE TO SOURCE VOLTAGE (V)

GS

TC = -40oC

TC = 25oC

TC = 125oC

0.8
VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

0.6

0.4

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.2

DS(ON)

r

0

04 8121620

I

TC = 125oC

, DRAIN CURRENT (A)

D

TC = 25oC

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs

DRAIN CURRENT

3

TC = -40oC

RFM12N08, RFM12N10, RFP12N08, RFP12N10

Typical Performance Curves

2.0
VGS = 10V

ID = 12A
PULSE DURATION = 80µs

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (oC)

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

0

0 10203040506070

, DRAIN TO SOURCE (V)

V

DS

VGS = 0V, f = 1MHz
C

ISS

C

RSS

C

OSS

= CGS + C

= C

GD

≈ CDS + C

C

ISS

C

OSS

C

RSS

GD

GS

1.4
VGS = V

DS

ID = 250µA

1.2

1

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.6

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. NORMALIZEDGATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

100

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD = BV

I

G(REF)

20

I

G(ACT)

GATE

DSS

SOURCE

VOLTAGE

0.75 BV

DSS

0.50 BV

DSS

0.25 BV

DSS

DRAIN SOURCE VOLTAGE

t, TIME (µs)

RL = 8.33Ω

I

G(REF)

VGS = 10V

VDD = BV

= 0.56mA

DSS

I

G(REF)

80

I

G(ACT)

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

4

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

RFM12N08, RFM12N10, RFP12N08, RFP12N10

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

G

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

10%

90%

0

V

GS

0

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

D

DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

V

GS

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 13. GATE CHARGE TEST CIRCUIT

S

CURRENT

I

D

SAMPLING

V

DS

I

G(REF)

0

FIGURE 14. GATE CHARGE WAVEFORMS

5