Datasheet RFP10P15 Datasheet (Intersil)

RFP10P15

Data Sheet October 1999

-10A, -150V, 0.500 Ohm, P-Channel Power
MOSFET

This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA9404.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP10P15 TO-220AB RFP10P15

NOTE: When ordering, include the entire part number.

File Number 1595.2

Features

• -10A, -150V

•r

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.500Ω

Components to PC Boards”

Symbol

D

G

Packaging

DRAIN

(TAB)

TO-220AB

SOURCE

DRAIN

GATE

S

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

407-727-9207

| Copyright © Intersil Corporation 1999

RFP10P15

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP10P15 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20KΩ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

-150 V

-150 V
10 A
30 A

±20 V

75 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 (for TO-220). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

DSSID

DSS

= 250µA, VGS = 0 -150 - - V

= VDS, ID = 250µA -2 - -4 V
VDS = Rated BV
VDS= 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS = 0V,

DSS

TC = 125oC--25µA

Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R

GSS

OSS
RSS

VGS = ±20V, VDS = 0 - - ±100 nA

= 10A, VGS = -10V - - -5.0 V
= 10A, VGS = -10V, (Figures 6, 7) - - 0.500 Ω

R

r

L

(Figures 10, 11, 12)

≈ 10A, V

= 7.5Ω, V

= -75V, R

DS

= -10V

GS

= 50Ω

G

-2450ns

- 74 150 ns

- 138 225 ns

f

VGS = 0V, VDS = -25V

ISS

f = 1MHz
(Figure 9)

- 61 100 ns

- - 1700 pF

- - 600 pF

- - 350 pF

RFM10P12, RFM10P15 - - 1.25

JC

θ

RFP10P12, RFP10P15 1.67

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

SD

rr

NOTES:

2. Pulsed: Pulse Duration = 300µs Max, Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

2

ISD = -10A - - 1.4 V
ISD = -10A, dlSD/dt = 100A/µs - 210 - ns

Typical Performance Curves

RFP10P15

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

100

OPERATION IN THIS AREA
LIMITED BY r

ID MAX CONTINUOUS

10

1

, DRAIN CURRENT (A)

D

I

0.1

-1 -10 -100 -1000

DS(ON)

DC

RFM10P12, RFP10P12

RFM10P15, RFP10P15

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ= MAX RATED

= 25oC

T

C

-12

-11

-10

-9

-8

-7

-6

-5

-4

, DRAIN CURRENT (A)

-3

D

I

-2

-1
0

25 50 75 100 125 150

RFP10P12, RFP10P15

, CASE TEMPERATURE (oC)

T

C

RFM10P12, RFM10P15

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

CASE TEMPERATURE

32

PULSE DURATION = 80µs
T

= 25oC

C

28

24

20

16

12

DRAIN CURRENT (A)

8

D,

I

4
0

-1 -3 -5 -7 -9

0-2-4

V

VGS = -20V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = -5V

-6 -8 -10

VGS = -10V

VGS = -8V

VGS = -7V

VGS = -6V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

14

VDS= -10V
PULSE DURATION = 80µs

12

10

8

6

4

ON STATE DRAIN CURRENT (A)

2

D(ON),

I

0

-1

0-2-4-6-7

GATE TO SOURCE VOLTAGE (V)

V

GS,

125oC

-3 -5 -8

25oC

-40oC

125oC

-40oC

0.8
VGS = -10V

0.7

PULSE DURATION = 80µs

0.6

0.5

0.4

0.3

DRAIN TO SOURCE ON

RESISTANCE (Ω)

0.2

DS(ON),

r

0.1

0

02 8 12 20

4 6 10 14

ID,DRAIN CURRENT (A)

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vsDRAIN

CURRENT

3

125oC

25oC

o

-40

C

1816

Typical Performance Curves (Continued)

RFP10P15

2.0
= -10A

I

D

VGS = 10V

1.5

1.0

0.5

ON RESISTANCE (mΩ)

NORMALIZED DRAIN TO SOURCE

0

-50

0

JUNCTION TEMPERATURE (oC)

T

J,

50 100 150

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1600

1400

C

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

0

0 -10 -20 -30 -40 -50

ISS

C

OSS

C

RSS

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 0V, f = 1MHz

= CGS + C

C
C
C

ISS
RSS
OSS

= C

GD

≈ CDS + C

GD

GD

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

1.4
ID= 250µA

VDS = V

1.3

1.2

1.1

1.0

0.9

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.7

0.6

-50 0 50 100

GS

T

JUNCTION TEMPERATURE (oC)

J,

150

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

150

112.5

75

37.5

DRAIN TO SOURCE VOLTAGE (V)

0

VDD= BV

I

20

I

DSS

G(REF)

G(ACT)

GATE

SOURCE

VOLTAGE

RL = 15

= 0.84mA

I

G(REF)

V

= -10V

GS

0.75BV

DSS

0.50BV

DSS

0.25BV

DSS

DRAIN SOURCE

VOLTAGE

t, TIME (µs)

V

80

DD

I
I

= BV

G(REF)

G(ACT)

10

DSS

8

6

4

2

0

NOTE: Refer to Intersil Applications Notes AN7254 and AN7260

FIGURE 10. NORMALIZED SWITCHINGWAVEFORMS FOR

CONSTANT GATE CURRENT

GATE TO SOURCE VOLTAGE (V)

Test Circuits and Waveforms

DUT

R

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

G

4

t

ON

t

d(ON)

t

R

L

-

V

DD

+

0

V

DS

V

GS

0

10%

r

10%

90%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

90%

t

f

10%

RFP10P15

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