Page 1
RFP10N15
March 1999 File Number 1445.3Data Sheet
10A, 150V, 0.300 Ohm, N-Channel Power
MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09192.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP10N15 TO-220AB RFP10N15
NOTE: When ordering, include the entire part number.
Packaging
TO-220AB
Features
• 10A, 150V
•r
DS(ON)
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.300Ω
Components to PC Boards”
Symbol
D
G
S
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
RFP10N15
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP10N15 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
DM
GS
D
150 V
150 V
10 A
25 A
±20 V
60 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance(Note 2) r
DS(ON)ID
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DSSID
GS(TH)
DSS
GSS
DS(ON)ID
d(ON)
= 250µA, VGS = 0 150 - - V
VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS= Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
, TC = 125oC- - 25 mA
DSS
VGS = ±20V, VDS = 0 - - ±100 nA
= 10A, VGS = 10V, (Figures 6, 7) - - 0.300 Ω
= 10A, VGS = 10V - - 3.0 V
I
≈ 5A, V
D
= 75V, R
DD
= 50Ω,
G
-4060ns
VGS = 10V, RL= 14.7Ω
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
r
f
ISS
(Figures 10, 11, 12)
VGS = 0V, VDS = 25V,
- 165 250 ns
- 90 135 ns
- 90 135 ns
- - 850 pF
f = 1MHz, (Figure 9)
Output Capacitance C
Reverse Transfer Capacitance C
OSS
RSS
- - 230 pF
- - 100 pF
Thermal Resistance Junction to Case RFP10N15 - - 2.083oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤ 2%
3. Repetitive rating: pulse width is limited by maximum junction temperature.
2
ISD = 5A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 200 - ns
Page 3
Typical Performance Curves
RFP10N15
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
100
ID MAX CONTINUOUS
10
DC
TC = 25oC
12
10
8
6
4
, DRAIN CURRENT (A)
D
I
2
0
25 50 75 100 125 150
, CASE TEMPERATURE (oC)
T
C
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
20
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
= 25oC
T
C
15
10
VGS = 8V
VGS = 20V
VGS = 10V
VGS = 7V
OPERATION IN THIS AREA
1
MAY BE LIMITED BY R
, DRAIN CURRENT (A)
D
I
0.1
1 10 100 1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
DRAIN CURRENT (A)
D,
5
I
0
1
02345
V
DRAIN TO SOURCE VOLTAGE (V)
DS,
6789
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
20
VDS= 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤2%
15
10
5
DRAIN TO SOURCE CURRENT (A)
125oC
DS(ON),
0
I
0246810
GATE TO SOURCE VOLTAGE (V)
V
GS,
-40oC
-40oC
25oC
125oC
0.7
VGS = 10V
PULSE DURATION = 80µs
0.6
DUTY CYCLE ≤2%
0.5
0.4
0.3
DRAIN TO SOURCE ON
RESISTANCE (Ω)
0.2
0.1
DS(ON),
r
0
02 8 12 16
4 6 10 14
ID,DRAIN CURRENT (A)
VGS = 6V
VGS = 5V
VGS = 4V
125oC
o
25
C
o
C
-40
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TOSOURCE ONRESISTANCEvs DRAIN
CURRENT
3
Page 4
RFP10N15
Typical Performance Curves
2.0
PULSE DURATION = 80µs
= 5A
I
D
VGS = 10V
1.5
(Continued)
1.0
ON RESISTANCE
0.5
NORMALIZED DRAIN TO SOURCE
0
-50
0
T
JUNCTION TEMPERATURE (oC)
J,
50 100 150
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1000
800
600
400
C, CAPACITANCE (pF)
200
0
01020304050
V
DRAIN TO SOURCE VOLTAGE (V)
DS,
VGS = 0V, f = 1MHz
= CGS + C
C
ISS
C
= C
RSS
OSS
GD
≈ CDS + C
C
ISS
C
OSS
C
RSS
C
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
GD
GD
1.4
ID= 250µA
VDS = V
1.3
GS
1.2
1.1
1.0
0.9
NORMALIZED GATE
0.8
THRESHOLD VOLTAGE
0.7
-50 0 50 100
JUNCTION TEMPERATURE (oC)
T
J,
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
150
112.5
75
37.5
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
VDD= BV
DSS
SOURCE
VOLTAGE
RL = 15Ω
I
G(REF)
V
GS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
DRAIN SOURCE
0
I
G(REF)
20 80
I
G(ACT)
VOLTAGE
t, TIME (µs)
GATE
= 1mA
= 10V
0.75BV
0.50BV
0.25BV
DSS
DSS
DSS
= BV
V
DD
DSS
I
G(REF)
I
G(ACT)
10
8
6
4
2
0
NOTE: Refer to Intersil Applications Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHINGWAVEFORMS FOR
CONSTANT GATE CURRENT
150
, GATE TO SOURCE VOLTAGE (V)
GS
V
Test Circuits and Waveforms
R
G
V
GS
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
4
t
ON
t
d(ON)
t
R
L
+
V
DD
-
V
DS
90%
0
r
10%
DUT
V
GS
10%
0
50%
PULSE WIDTH
t
d(OFF)
90%
t
OFF
50%
t
f
90%
10%
Page 5
RFP10N15
Test Circuits and Waveforms
CURRENT
REGULATOR
12V
BATTERY
0
0.2µF
50kΩ
I
G(REF)
0.3µF
G
IG CURRENT
SAMPLING
RESISTOR RESISTOR
FIGURE 13. GATE CHARGE TEST CIRCUIT
(Continued)
V
DS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
DUT
S
CURRENT
I
D
SAMPLING
V
DD
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
DS
0
I
G(REF)
V
GS
FIGURE 14. GATE CHARGE WAVEFORMS
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