Page 1
查询RF337XPCBA-410供应商
RF3377
0
RoHS Compliant & Pb-Free Product
Typical Applications
• Basestation Applications
• Broadband, Low-Noise Gain Blocks
• IF or RF Buffer Amplifiers
Product Description
The RF3377 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an e asily-cascadable 50 Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency b ands up to 6000MHz.
The device is self-contained with 50 Ω input and output
impedances and requires only two external DC-biasing
elements to operate as specified.
GENERAL PURPOSE AMPLIFIER
• Driver Stage for Power Amplifiers
• Final PA for Low-Power Applications
• High Reliability Applications
3.10
2.90
0.48
0.36
2 PL
1.04
0.80
2.60
2.40
0.50
0.30
4.60
4.40
1.60
1.40
1.80
1.45
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
InGaP/HBT
9
SiGe HBT
GaN HEMT SiGe Bi-CMOS
GND
4
1 2 3
GND
RF IN
Si CMOS
RF OUT
1.75
1.40
Dimensions in mm.
Shaded lead is pin 1.
0.43
0.38
Package Style: SOT89
Features
• DC to >6000MHz Operation
• Internally Matched Input and Output
• 15.5dB Small Signal Gain
• +25.5dBm Output IP3
• +13dBm Output P1dB
Ordering Information
RF3377 General Purpose Amplifier
RF337XPCBA-410Fully Assembled Evaluation Board
0.53
0.41
Functional Block Diagram
Rev A6 050524
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-607
Page 2
RF3377
Absolute Maximum Ratings
Parameter Rating Unit
Input RF Power +13 dBm
Operating Ambient Temperature -40 to +85 ° C
Storage Temperature -60 to +150 °C
60 mA
I
CC
Parameter
Min. Typ. Max.
Specification
Overall
Frequency Range DC to >6000 MHz
3dB Bandwidth 4.4 GHz
Gain 15.5 16.7 dB Freq=500MHz
15.0 16.5 dB Freq=1000MHz
14.5 15.5 dB Freq=2000MHz
14.5 dB Freq=3000MHz
14.0 Freq=4000MHz
13.0 Freq=6000MHz
Noise Figure 3.0 dB Freq=2000MHz
Input VSWR <2:1 In a 50Ω system, DC to 5000MHz
Output VSWR <1.8:1 In a 50Ω system, DC to 6000MHz
Output IP3 24.5 25.5 dBm Freq=1000MHz
+24.5 +25.5 dBm Freq=2000MHz
Output P1dB +12.0 +13.5 dBm Freq=1000MHz
+11.5 +13.0 dBm Freq=2000MHz
Reverse Isolation 19 dB Freq=2000MHz
Thermal
Theta
JC
Maximum Measured Junction
Temperature at DC Bias Conditions
Mean Time To Failures 77,000 years T
122 °C/W V
102 °C T
Power Supply
Device Operating Voltage 3.65 3.7 V At pin 8 with I
4.5 4.8 V At evaluation board connectors, I
Operating Current 40 60 mA See Note 2.
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are
not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
Note 2: The RF3377 must be operated at or below 60mA in order to achieve the thermal performance stated above. Operating at 40mA
will ensure the best possible combination of reliability and electrical performance.
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution
should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 60mA over all intended
operating conditions.
RF Micro Devices belie ves t he furnished inf ormation is correct and accur ate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit Condition
Caution! ESD sensitive device.
T=25°C, ICC=40mA (See Note 1.)
ICC=40mA, P
=3.38V
PIN
=+85°C
CASE
=+85°C
CASE
With 22Ω bias resistor
=135mW. (See Note 3.)
DISS
=40mA
CC
=40mA
CC
4-608
Rev A6 050524
Page 3
RF3377
Pin Function Description Interface Schematic
1RF IN
2GND
3RF OUT
4GND
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Ground connection.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
R
-------------------------------------------------------=
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 60mA over the planned operating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 3.6V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
Ground connection.
. The resistor is selected to set the
CC
V
SUPPLYVDEVICE
–()
I
CC
RF OUT
RF IN
Rev A6 050524
4-609
Page 4
RF3377
Application Schematic
4
V
CC
J1
RF IN
100 pF
RF IN
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1 VCC1
50 Ω μstrip
1
2
3
CON3
GND
C1
100 pF
337x410, r.1
1 2 3
1 2 3
22 Ω 100 pF
100 nH
100 pF
4
R1
22 Ω
L1
100 nH
C2
100 pF
+
1 μF
RF OUT
+
C3
100 pFC41 μF
50 Ω μstrip
VCC
J2
RF OUT
4-610
Rev A6 050524
Page 5
Evaluation Board Layout
Board Size 1.195" x 1.000"
Board Thickness 0.033”, Board Material FR-4
RF3377
Rev A6 050524
4-611
Page 6
RF3377
Gain versus Frequency Across Temperature
18.0
16.0
14.0
12.0
10.0
Gain (dB)
8.0
6.0
4.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
(ICC=40mA)
Frequency (MH z)
Output IP3 versus Frequency Across Temperature
35.0
30.0
25.0
20.0
(ICC=40mA)
-40°C
25°C
85°C
Output P1dB versus Frequency Across Temperature
16.0
14.0
12.0
10.0
8.0
6.0
Output Power (dBm)
4.0
2.0
0.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
(ICC=40mA)
Frequency (M Hz)
Noise Figure versus Frequency Across Temperature
4.5
4.0
3.5
3.0
2.5
(ICC=40mA)
-40°C
25°C
85°C
15.0
OIP3 (dBm)
10.0
5.0
0.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
Frequency (MH z)
Input VSWR versus Frequency Across Temperature
3.0
2.5
2.0
VSWR
1.5
1.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
(ICC=40mA)
Frequency (M Hz)
-40°C
25°C
85°C
-40°C
25°C
85°C
2.0
Noise Figure (dB)
1.5
1.0
0.5
0.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0 3000.0 3500.0
Frequency (MH z)
Output VSWR versus Frequency Across Temperature
2.0
1.8
1.6
VSWR
1.4
1.2
1.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
(ICC=40mA)
Frequency (MH z)
-40°C
25°C
85°C
-40°C
25°C
85°C
4-612
Rev A6 050524
Page 7
RF3377
Reverse Isolation versus Frequency Across
-10.0
-15.0
-20.0
Reverse Isolation (dB)
-25.0
-30.0
0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
Temperature
(ICC=40mA)
Frequency (M Hz)
Power Dissipated versus Voltage at Pin 8
T
=85°C
0.25
0.20
)
Ω
0.15
0.10
Power Dissipated (
0.05
0.00
3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65
AMB
V
(V)
PIN
-40°C
25°C
85°C
Junction Temperature versus Power Dissipated
(T
=+85°C)
150.00
130.00
110.00
90.00
AMBIE NT
Junction Temperature (°C)
70.00
50.00
0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24
Power Dissipated (Ω)
Current versus Voltage
70.0
60.0
50.0
40.0
(mA)
CC
I
30.0
20.0
10.0
0.0
3.63.84.04.24.44.64.85.05.2
(At Evaluation B oard Connector, R
VCC (V)
BIAS
=22Ω)
-40°C
25°C
85°C
70.0
60.0
50.0
40.0
(mA)
CC
I
30.0
20.0
10.0
0.0
3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0
Rev A6 050524
Current versus Voltage
(At Pin 3 of the RF 3377)
V
(V)
PIN
-40°C
25°C
85°C
4-613
Page 8
RF3377
4-614
Rev A6 050524
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