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RF2689PCBA

Datasheet RF2689, RF2689PCBA Datasheet (RF Micro Devices)

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7-39
7
QUADRATURE
DEMODULATORS
Preliminary
Product Description
Ordering Information
Typical Applications
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS
ü
SiGe HBT
Si CMOS
7
MODE A
Gain
Control
DIV2
Div
12 or 4
DIV2
I/Q Cal
Mode Control
&Biasing
8
LO
4W-CDMA IN+
2GSM IN+
6
VCC
20
VGC21VGC117IF+
14 I OUT+
15 CALEN 16 FCLK
11 Q OUT-
19 VREF2V
10
EN RX
3GSM IN-
5W-CDMA IN-
9
MODE B
12 Q OUT+
13 I OUT-
18
IF-
RF2689
W-CDMA/GSM/DCS RECEIVE AGC
AND DEMODULATOR
• Multimode W-CDMA/GSM/DCS/EDGE
• W-CDMA Systems
• GSM Systems
The RF2689 is an integrated complete IF AGC amplifier and quadrature demodulator designed for the receive section of W-CDMA and GSM/DCS applications. It is designed to amplify received IF signals, while providing 70 dB of gain control range, a total of 90dB gain, and demodulate to baseband I and Q signals. This circuit is designed as part of RFMD’s multimode W-CDMA/GSM/ DCS chipset, which also includes the RF2688 W-CDMA/ GSM/DCS transmit modulator and IF AGC/Upconverter. The IC is manufactured on an advanced 25GHz F
T
Sili-
con Bi-CMOS process, and is packaged in a 20-pin, 4mmx4mm, leadless chip carrier.
• Digitally Controlled Power Down Mode
• 2.7V to 3.3V Operation
• Digital LO Quadrature Divide-by-8
•IFAGCAmpwith70dBGainControl
• 80dB Maximum Voltage Gain
RF2689 W-CDMA/GSM/DCSReceive AGC and Demodulator RF2689 PCBA Fully Assembled EvaluationBoard
7
Rev A4 010815
1.00
0.90
4.00 sq.
0.60
0.24 typ
3
0.20
0.75
0.50
0.23
0.13
4PLCS
0.50
2.10 sq.
0.65
0.30
4PLCS
0.05
12°
MAX
Dimensionsin mm.
Note orientation of package .
NOTES:
Package Warpage: 0.05 mm max.
4
Die Thickness Allowable: 0 .305 mm max.
5
Pin 1 identifier must existon top surface of package by identification mark or feature on the package body. Exact shape and size is optional.
2
Shaded lead is Pin 1.
1
Dimension applies to p lated terminal: to be measured between 0.02 mm and 0.25 mm from terminal end.
3
Package Style: LCC, 20-Pin, 4x4
Preliminary
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QUADRATURE
DEMODULATORS
Absolute Maximum R atings
Parameter Rating Unit
Supply Voltage -0.5 to +5 V
DC
Power Down Voltage(VPD) -0.5toVCC+0.7 V
DC
Input RF Power +3 dBm Ambient Operating Temperature -40 to +85 °C Storage Temperature -40 to +150 °C
Parameter
Specification
Unit Condition
Min. Typ. Max.
W-CDMAMode
Temp=25°C, VCC=3V, Z
LOAD
=60kΩ diff.,
LO =1520MHz@-10dBm, Z
SOURCE
=500Ω
diff. IF Frequency 190 MHz W-CDMA IF Input Impe dance 1200 Ω Single-ended
2400 Ω Balance. An external resistor across the dif-
ferential input is used to define the input
impedance. LO Frequency 1520 MHz LO Input Level -20 -10 0 dBm LO Input Impedance 50 Ω Single-ended. Maximum Voltage Gain 76 80 dB Pin-to-Pin voltage gain.
Note: 10dB additional voltage gain in input
match 50Ω to 500Ω. Minimum Voltage Gain 5 10 15 Gain Variation versus V
CC
and
Temperature
-3 +1+3dB
Gain Control Voltage 0.3 2.4 V Defined with external 10kΩ resistor in series
with V
GC1
pin. Analog gai n control.
Input IP3 Blockers at 10MHz and 20MHz offset.
-52 -48 dBm Maximum Gain. V
GC
=2.4V
-5 0 dBm MinimumG ain. VGC=0.3V
Noise Figure 5 7 dB Maximum Gain. V
GC
=2.4V
56 58 Minimum Gain V
GC
=0.3V
Inband Output 1dB Compression 1.5 2.0 V
P-P
Measured differentia lly. Compression Out of band blocker causing 1dB of inband
gain compression. Blocker at 5MHz.
-48 dBm Maximum Gain. V
GC
=2.4V
-17 dBm Minimum Gain. V
GC
=0.3V
Butterworth third order, F
C
2.5M+10%
Baseband 3dB Bandwidth 2.25 2.5 2.75 MHz Calibrated. F
CLK
=13MHz, 3dB rolloff from
1MHz offset Sideband Suppression 27 dB A measure of IQ gain match and IQ quadra-
ture accuracy. Measured for baseband fre-
quencies 100kHz to 2.5MHz. DC Offset +40 mV Baseband External Load 20 60 kΩ Resistive Load Impedance.
Differentially across op pins.
5 pF Capacitive Load Impedance.
To ground. Output DC Voltage V
CC
-1.3 VCC-1.6 VCC-1.9 V
IQ Amplitude Balance +
0.2 +0.5 dB VGC=0.3V, PIN=-30dBm
IQ Phase Balance +
2+5 degree VGC=0.3V, PIN=-30dBm
Caution! ESD sensitive device.
RF Micro Devices believes the furnishedinformation is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Preliminary
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QUADRATURE
DEMODULATORS
Parameter
Specification
Unit Condition
Min. Typ. Max.
GSM/DCS Mode
Temp=25°C, VCC=3V,Z
LOAD
=60kΩdiff.,
LO =1080MHz@-10dBm, Z
SOURCE
=500Ω
IF Frequency 225 MHz 2nd IF Frequency 45 MHz LO Frequency 1080 MHz LO Input Level -20 -10 0 dBm LO Input Impedance 50 Ω Single-ended. Maximum Voltage Gain 77 83 dB V
GC
=0.5V to 2.4 V
Pin-to-Pin voltage gain. Note: 10dB additional voltage gain in input
match 50Ω to 500Ω. Minimum Voltage Gain -15 -10 -5 dB Gain Variation versus V
CC
and
Temperature
-3 +2+3dB
Gain Control Voltage 0.3 2.4 V Defined with external 10kΩ resistor in series
with GC pin . Analog gain control. Noise Figure 6 8 dB Maximum Gain. V
GC
=2.4V
80 82 Minimum Gain V
GC
=0.3V
Input IP3 Blockers at 800kHz and 1650kHz offset.
-54 -49 dBm Maximum Gain. V
GC
=2.4V
-5 0 dBm Minimum Gain. V
GC
=0.3V
Inband Output 1dB Compression 1.5 2.5 V
P-P
Maximum Gain. Measured differentially. Compression Out of band blocker causing 1dB of inband
gain compression. Blocker at 800kHz offset.
-65 dBm Maximum Gain. V
GC
=2.4V
-17 dBm Minimum Gain. V
GC
=0.3V
GSM IF Input Impedance 1200 Ω Single-ended
2400 Ω Balance. An external resistor across the dif-
ferential input is used to define the input
impedance.
Butterworth third order, F
C
250k+10%
Baseband 3dB Bandwidth 225 250 275 kHz 3dB rolloff from 50kHz offset
Calibrated. F
CLK
=13MHz
100 400 kHz Uncalibrated.
Sideband Suppression 27 dB A measure of IQ gain match and IQ quadra-
ture accuracy. Measured for baseband fre-
quencies 100kHz to 2.5MHz. DC Offset +
60 mV
Baseband External Load 20 60 kΩ Resistive Load Impedance.
Differentially across op pins.
5 pF Capacitive Load Impedance.
To ground. Output DC Voltage V
CC
-1.3 VCC-1.6 VCC-1.9 V
IQ Amplitude Balance +
0.2 +0.5 dB VGC=0.3V,PIN=-30dBm
IQ Amplitude Balance +
2+5degreeVGC=0.3V,PIN=-30dBm
Preliminary
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QUADRATURE
DEMODULATORS
1
Bondout option available for 15.36MHz, 18MHz and 19MHz.
Parameter
Specification
Unit Condition
Min. Typ. Max.
Auto Calibration
F
CLK
Input Frequency
1
13 MHz
F
CLK
Signal Level 0.4 1.0 V
P-P
F
CLK
Pin Input Imped ance 20 kΩ Single-ended.
Calibration Time 200 us Current, Auto Cal. 1 mA Disabled after calibration. Current, Once Auto C al Finished 1 uA
DC Specifications
Supply Voltage 2.7 3.0 3.3 V Current Consumption
Power Down <1 µA W-CDMA Standby 5 6 mA W-CDMA 8 10 mA GSM/DCS Standby 5 6 mA GSM/DCS 9 12 mA
Logic Levels
V
EN
High Voltage 1.8 V
CC
V
V
EN
Low Voltage 0 0.5 V
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QUADRATURE
DEMODULATORS
Mode Control
Logic
Mode Control Truth Table
Auto Calibration Mode The filters are automatically tuned when the CALEN pin goes high. The filters are reset to a nominal value wheneverthe CALEN pin goes low. The auto calibration circuitry is independent of the “Mode A/B” and the EN RX control pins. The EN RX and CALEN pins can be connected together if desired.
Truth Table
EN RX Chip Enable If EN=0 then the whole IC is powered down
Mode EN RX Mode B Mode A
Power Down 0 X X GSM/DCS RX Warm-Up 1 0 1 GSM/DCS RX 1 1 1 W-CDMA RX Warm-Up 1 0 0 W-CDMARX 110
Mode W-CDMA
Input Amp
GSMInput Amp
&1stMixer
Fixed
Divider
GSM
Divider
Second
Dividers
VGA Demod Baseband
& Filters PowerDown 0 0 000000 GSM/DCS RX Warm-Up 0 0 1
(div 2)
0
(div 2)
0
(div 12)
000
GSM/DCS RX 0 1 1
(div 2)
1
(div 2)
1
(div 12)
111
(250kHz)
W-CDMA RX Warm-Up 0 0 1
(div 2)
01
(div 4)
000
W-CDMA RX 1 0 1
(div 2)
00
(div 4)
111
(2.5MHz)
Preliminary
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QUADRATURE
DEMODULATORS
Pin Function Description Interface Schematic
1VGC1
Analog gain control. Validcontrolvoltage ranges are for m 0.5V to 2.5V. These voltages are valid with a 10kΩ resistor in series with GC pin.
2GSMIN+
GSM IF ba lanced input. Input internally DC-biased.
3GSMIN-
Same as pin 2.
4 W-CDMA
IN+
W-CDMA IF balanced input. Input internally DC-biased.
5 W-CDMA
IN-
Same as pin 4. See pin 4.
6VCC
Supply
7MODEA
DCS/GSM/GSM RX/W-CDMA mode selection.
8LO
LO input pin. Input internally DC-biased.
9MODEB
Warm-up mode ena ble. The input LO buffers and divider chains are enabled.
10 EN RX
Chip enable.
11 Q OUT-
Complementary output to Q OUT+.
12 Q OUT+
Balanced baseband output.
13 I OUT-
Complementary output to I OUT+.
14 I OUT+
Balanced baseband output.
15 CALEN
Calibration enable.
16 FCLK
F
CLK
clock reference for the automatic calibration circuitry.
17 IF-
Complementary output to IF+.
18 IF+
IF test point output.
19 VREF2V
2V voltage reference decouple.
20 VGC2
Gain control decouple.
Pkg
Base
Die
Flag
Ground.
1200 Ω1200 Ω
W-CDMA IN+
BIAS BIAS
W-CDMA IN-
150 µA
QOUT-
QOUT+
V
CC
V
CC
150 µA
150 µA
IOUT-
IOUT+
150 µA
V
CC
V
CC
20 kΩ
Preliminary
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QUADRATURE
DEMODULATORS
Application Notes
Voltage Gain Measurement Set-up
The evaluation board uses a unity voltage gain Op-Amp to simulate the 60kΩ differential load impedance condition for thechip.The50Ω output impedance of Op-Amp makes the use of a 50 Ω spectrum analyzer power measurement possi- ble. The power gain measured will be considered as RAW Gain. The input impedance of the chip is 500Ω differential by adding a parallel 680Ω resistor. The input transformer matches 50Ω to 500Ω and results in 10dB difference between voltage gain and power gain, hence, the voltage gain of the chip is RAW G ain minus 10dB. Because the input trans­former loss is 0.8dB, it needs to be added to the gain. Since the Op-Amp has the unity voltage gain, the voltage at the evaluation board output is the same as the voltage at chip I or Q output. Therefore, the voltage gain of the chip with 60kΩ load can be calculated by
Gv=RAW Gain-10+0.8(dB)
Input IP3 Measurement
The input IP3 measurement is based on a two tone inter-modulation test conditionfrom the 3GPP standard, which spec­ifies two tones with offset frequencies at 10MHz and 20MHz. Due to the on-chip baseband filtering, the two tone output is attenuated and cannot be seen. Since the only parameter observable is the IM3 product, the input IP3 then is calcu­lated by
IIP3=Pin+0.5*(P in+RAW Gain-IM3)
Noise Figure Measurement
The noise figure measurement is based on the noise figure definition NF=N
O-NI
-Gain, where NOis the output noise
density, N
I
is the input noise density (-174dBm/Hz when no input signal is applied) and Gain is the RAW Gain. The out-
put noise density N
O
is measured at 1 MHz offset when no signal input is applied. The NF is calculated by NF=NO-
174 dBm/Hz-RAW Gain. Since the I and Q re-combination will provide 3dB extra for signal-to-noise ratio, the actual
noise figure is should be reduced by 3dB. In addition, noise figure should be reduced by the input transformer loss of
0.8 d B. Therefore, the NF is calculated by NF=N
O
+174-RAW Gain-3-0.8(dB)
1dB Gain Compression Point Voltage at Baseband Output
The device has a relatively constant 1dB gain compression point versus V
GC
. Gain compression is tested with a CW sig-
nal with 60kΩ load differential.
How to Calculate the Power Gain of the Demodulator
In the system analysisfor cascaded gain, noise and IP, it is often required to calculate the power gain of the demodulator chip itself in matched load condition. Below is an example on how to deter mine this power gain value.
For this example, the load impedance is 60kΩ differential, the output AC impedance of the I or Q port is 500Ω,themea­sured RAW Gain is 95dB.
First, the power gain from the input of the chip to the input of Op-Amp needs to be calculated. Since the voltage at the 50 Ω load and the voltageat Op-Amp input are the same, the difference of the power gain across the Op-Amp is the ratio of load impedances.Hence, the power gain to the Op-Amp input is 95dB-10log(60000/50)=95-30=65 dB.
Second, the power gain of the demodulator itself with matched load is calculated. The mismatch coefficient a is deter­mined by the mismatch coefficient equation
α 10
4R
SRL
RSRL+()
2
--------------------------
log 10
4 500 60000⋅⋅
500 60000+()
2
-------------------------------------
log 15dB–== =
Preliminary
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Rev A4 010815
7
QUADRATURE
DEMODULATORS
Since the power gain to the input of the Op-Amp GP’=αGP, where GPis the power gain of demodulatorfor matched load. Therefore, the demodulator power gain is 65+15 = 80 dB.
AC Coupling in Evaluation Board
The output I and Q baseband signal is AC coupled for evaluation purposes only. The high-pass corner frequency is at 1/(2π RC)=1/ (6.28*30kΩ*100nF)=56Hz.
I and Q Output DC Voltage and Its Offset
Although the I and Q output is AC coupled on the evaluation board, in most applications, it would be DC coupled to the ADC input buffer. The DC voltage at the IC output is V
CC
-1.6V with a possible variation of ±0.3V due to temperature and
tolerance. The differential circuit asymmetry would cause common mode DC offset to the extent of ±40mV.
Baseband Filter Calibration Process
The BB (baseband) filter calibration process is same for both WCDMA and GSM/DCS. After calibration is done, the WCDMA mode sets the circuitry to have a 3dB bandwidth of 2.5MHz, the GSM/DCS mode (if the chip has GSM/DCS mode) sets the circuitry to have a 3dB bandwidth of 250kHz.
The BB filter in the I and Q path needs to be calculatedevery time after powerdown.When the FCLK pin is connected to a signal generator with 0dBm output level at 13.0MHz, a logic high at CALEN pin for 200µs will calibrate the filter to have
2.5MHz bandwidth with 10% accuracy when WCDMA mode is set, or to 250kHz bandwidth with 10% accuracy when GSM mode is set. The calibration is done when the chip is powered on only. Calibration is independent from all other conditions,e.g. the chip enable could be off.
The calibration circuitry consumes 400µA. When the calibration sequence is complete after 200µs, the I
CC
drops to
0mA. The 3dB bandwidth is definedto be from the reference level at 1MHz for WCDMA and at 50kHz for GSM/DCS.The 3dB
bandwidth is independent of V
GC
and VCC.
The filter can also be calibrated with different clock frequencies from 10MHz to 30MHz to tune the bandwidth over -40% to +60% from its default 3dB bandwidth (2.5MHz for WCDMA and 250kHz for GSM). The 3dB bandwidth is linear with clock frequency.
Preliminary
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RF2689
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QUADRATURE
DEMODULATORS
Pin Out
19
VREF2V
18 17
IF-16FCLK
14
13
12
10
EN RX
98
LO
7
MODE A
5
4
3
2GSM IN+
1VGC1
* *
* *
20
VGC2VCC
6
11 Q OUT-
15 CALEN
*
Represents "GND".
GSM IN-
W-CDMA IN+
W-CDMA IN-
MODE B
QOUT+
IOUT-
IOUT+
IF+
Preliminary
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QUADRATURE
DEMODULATORS
Applicatio n Schematic
19 18 17 16
14
13
12
10987
5
4
3
2
1
* *
* *
20
6
11
15
C5
1nF
R6
680 Ω
L1
68 nH
C1
6pF
R1
10 kΩ
VGC
C2
5.1 pF
C6
1nF
R7
680 Ω
L2
150 nH
C10
10 nF
VCC MODEA MODEB
C20
1nF
ENRX
QOUTN
QOUTP
IOUTN
IOUTP
ENCAL
C9
10 nF
C8
10 nF
C11
10 pF
FCLK
LO IN
WCDMA IN
GSM IN
Preliminary
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7
QUADRATURE
DEMODULATORS
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Drawing 2689400 Rev -
19 18 17 16
14
13
12
10987
5
4
3
2
1
* *
* *
20
6
11
15
C5
100 pF
R6
680 Ω
L1
68 nH
C1
6pF
C3* DNI
50 Ωµstrip
J1
GSM
R1
10 kΩ
VGC
C2
5.1 pF
C4* DNI
50 Ωµstrip
J2
WCDMA
C6
100 pF
R7
680 Ω
L2
150 nH
C10
10 nF
VCC MODEA MODEB
C23*
DNI
C20
100 pF
C24*
DNI
50 Ωµstrip
J4
LO IN
ENRX TP7
QOUTN
TP6
QOUTP
TP5
IOUTN
TP4
IOUTP
R12*
DNI
C12
100 nF
R2
10 kΩ
C13
100 nF
R3
10 kΩ
R14
20 kΩ 32+
-
C14
100 nF
+5V
7
4
8
5
U2
R15
20 kΩ
6
CLC426
R18
51 Ω
50 Ωµstrip
J5
IOUT
C15
100 nF
-5V
R13*
DNI
C18
100 nF
R4
10 kΩ
C19
100 nF
R5
10 kΩ
R16
20 kΩ 32+
-
C16
100 nF
+5V
7
4
8
5
U3
R17
20 kΩ
6
CLC426
R19
51 Ω
50 Ωµstrip
J6
QOUT
C17
100 nF
-5V
ENCAL
C9
100 pF
C8
1nF
TP1
VREF2V
TP2
IFP
TP3 IFN
C11
10 pF
J3
FCLK
CON3
JP3
+5V
-5V
1 2 3
C21
1uF(16V)
+
C22
1uF(16V)
+
HDR 8
8 7 6 5 4 3 2 1
JP1
ENRX ENCAL
MODEA
MODEB
VCC
VGC
C7
1uF
+
R111MR101MR91MR8
1M
Note: Partswith* followingreference designator shouldnotbe populated on evaluation board.
Preliminary
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Rev A4 010815
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QUADRATURE
DEMODULATORS
Evaluation Board Layout
3.098” x 3.000”
Board Thickness 0.152”, FR-4 Multi Layer
Preliminary
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QUADRATURE
DEMODULATORS
Preliminary
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QUADRATURE
DEMODULATORS
Preliminary
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DEMODULATORS
Base Band Filter Respose (Caliberated)
(VCC=3.0V, VGC=2.4V,IF=225.05MHz,LO=1080MHz@ -10dBm)
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0
Frequency(kHz)
Amplitude (dBm)
Pout [dBm]
IGCversus V
GC
(VCC=3.0V, IF=225MHz,LO=1080MHz @-10dBm)
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
I
GC
(uA)
Igc [uA]
Voltage Gain versus Power Out (GSM-1dB Compression)
(IF=225MHz,LO=1080MHz,VCC=3.0V, VGC=2.4V)
72.0
74.0
76.0
78.0
80.0
82.0
84.0
800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0
P
OUT
(mV-peak)
Voltage Gain (dB)
VoltageGain [dB]
BaseBandFilter Measurement (Caliberated)
IF=190MHz,LO=1520MHz @ -10dBm,VCC=3.0V, VGC=2.4V)
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency(MHz)
Amplitude (dBm)
Pout [dBm] @ 2.4 Vgc
IGCversus V
GC
(IF=190MHz,LO=1520MHz @ -10dBm, VCC=3.0V, Temp. +25oC)
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
I
GC
(uA)
Igc [uA]
Voltage Gain versus P
OUT
(1dB Compression)
IF=190MHz,LO=1520MHz @ -10dBm,VCC=3.0V, VGC=2.4V)
71.0
72.0
73.0
74.0
75.0
76.0
77.0
78.0
79.0
80.0
81.0
82.0
600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800
P
OUT
(mV-peak)
Voltage Gain (dB)
Voltage Gain [dB]
Preliminary
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DEMODULATORS
Voltage Gain versus VGC(W-CDMA, Temp +25oC, -40
o
C
,
+85
o
C)
(IF=190MHz,LO=1520MHz @ -10dBm, VCC=2.7V, VGC=2.4V to
0.3V)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
VoltageGain(dB)
Gain @2.7V,Temp.+25C Gain @2.7V,Temp.- 40C Gain @2.7V,Temp.+85C
VoltageGain versus VGC(W-CDMA, Temp. +25oC, -40oC, +85oC)
(IF=190MHz, LO=1520MHz @ -10dBm,VCC=3.0V,VGC=2.4V to 0.3V)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
Voltage Gain (dB)
Gain @3.0V,Temp +25C Gain @3.0V,Temp.- 40C Gain @3.0V,Temp.+85C
Voltage Gain versus VGC(W-CDMA)
(IF=190MHz, LO=1520MHz @ -10dBm,
V
CC
=3.3V, VGC=2.4V to 0.3V, Temp=-25oC, -40oC, +85oC)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
Voltage Gain (dB)
Gain @3.3V,Temp.25C Gain @3.3V,Temp.- 40C Gain @3.3V,Temp.+85C
VoltageGian versus VGC(GSM, Temp=+25oC, -
40
o
C,+85oC) (IF=225MHz, LO=1080MHz, V
CC
=3.0V,VGC=2.4Vto0.3V)
-40.0
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
Voltage Gain (dB)
Gain @3.0V,Temp.+25C Gain @3.0V,Temp.- 40C Gain @3.0V,Temp.+85C
Voltage Gain versus VGC(GSM, Temp. +25oC, -40oC, +85oC)
(IF=225.05MHz,LO=1080MHz @ -10dBm,VCC=2.7V,VGC=2.4V to 0.3V)
-40.0
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
Voltage Gain (dB)
Gain @2.7V,Temp.+25C Gain @2.7V,Temp.- 40C Gain @2.7V,Temp.+85C
Voltage Gain versus VGC(GSM, Temp. +25oC, -40oC, +85oC)
(IF=225.05MHz, LO=1080MHz @ -10dBm, VCC=3.3V, VGC=2.4V to 0.3V)
-40.0
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
Voltage Gain (dB)
Gain @3.3V,Temp.+25C Gain @3.3V,Temp - 40C Gain @3.3V,Temp.+85C
Preliminary
7-55
RF2689
Rev A4 010815
7
QUADRATURE
DEMODULATORS
Voltage Gain versus VGC(W-CDMA, Temp. -40oC)
IF Freq. 190MHz, LO Freq. 1520MHz @ -10 dBm, VCC=3.3V, 3.0V, 2.7V,
V
GC
=2.4V to 0.3V)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
VoltageGain(dB)
Gain @3.3V,Temp.- 40C Gain @3.0V,Temp.- 40C Gain @2.7V,Temp.- 40C
Voltage Gain versus VGC(W-CDMA, Temp. 25oC)
(IF Freq. 190MHz, LO F req. 1520MHz @ -10dBm, VCC=3.3V, 3.0V,2.7V,VGC=2.4V to 0.3V)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
Voltage Gain (dB)
Gain @3.3V,Temp.25C Gain @3.0V,Temp.25C Gain @2.7V,Temp.25C
VoltageGain versus VGC(W-CDMA, Temp. +85oC)
(IF Freq. 190MHz, LO Freq. 1520MHz @ -10dBm, VCC=3.3V, 3.0V, 2.7V,
V
GC
=2.4Vto 0.3V)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
Voltage Gain (dB)
Gain @3.3V,Temp.+85C Gain @3.0V,Temp.+85C Gain @2.7V,Temp.+85C
Voltage Gain versus VGC(GSM, Temp. -40oC)
(IF=225MHz, LO=1080MHz @ -10dBm,VCC=3.3V, 3.0V, 2.7V, VGC=2.4V to 0.3V)
-40.0
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
VoltageGain(dB)
Gain @3.3V,Temp - 40C Gain @3.0V,Temp.- 40C Gain @2.7V,Temp.- 40C
Voltage Gain versus VGC(GSM, Temp. +25oC)
IF=225MHz, LO=1080MHz @ -10dBm,VCC=3.3V,3.0V, 2.7V, VGC=2.4V to 0.3V)
-40.0
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
Voltage Gain (dB)
Gain @3.3V,Temp.+25C Gain @3.0V,Temp.+25C Gain @2.7V,Temp.+25C
Voltage Gain versus VGC(GSM, Temp. +85oC)
(IF=225MHz, LO=1080MHz @ -10dBm,VCC=3.3V, 3.0V,
2.7V, V
GC
=2.4V to 0.3V)
-20.0
0.0
20.0
40.0
60.0
80.0
100.0
0.20.40.60.8 1 1.21.41.61.8 2 2.22.4
VGC(V)
Voltage Gain (dB)
Gain @3.3V,Temp.+85C Gain @3.0V,Temp.+85C Gain @2.7V,Temp.+85C
Preliminary
7-56
RF2689
Rev A4 010815
7
QUADRATURE
DEMODULATORS
IIP3versusVGC(W-CDMA, Temp. +25oC, -40oC, +85oC)
(IF=190MHz,LO=1520MHz@ -20dBm, VCC=2.7V, V
GC
=
2.4V to
0.3V)
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
10.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3@2.7V,Temp.+25C IIP3@2.7V,Temp.- 40C IIP3 @2.7V,Temp.+85C
IIP3 versus VGC(W-CDMA, Temp. +25oC, -40oC, +85oC)
(IF=190MHz,LO=1520MHz @ -10dBm, VCC=3.0V, VGC=2.4V to
0.3V)
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
10.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3@3.0V,Temp.+25C IIP3@3.0V,Temp.- 40C IIP3@3.0V,Temp.+85C
IIP3versusVGC(W-CDMA, Temp. +25oC, -40oC, +85oC)
(IF=190MHz,LO=1520MHz@ -10dBm, VCC=3.3V, V
GC
=
2.4V to
0.3V)
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
10.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3@3.3V,Temp.25C IIP3@3.3V,Temp.- 40C IIP3@3.3V,Temp.+85C
IIP3 versusVGC(GSM, Temp. +25oC, -40oC, +85oC)
(IF=225MHz,LO=1080MHz @ -10dBm, VCC=3.0V, V
GC
=
2.4V to
0.3V)
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
IIP3 (dBm)
IIP3 @3.0V,Temp.+25C IIP3 @3.0V,Temp.- 40C IIP3 @3.0V,Temp.+85C
IIP3 versus VGC(GSM, Temp. +25oC, -40oC, +85oC)
(IF Freq. 225.80MHz/226.650MHz, LO=1080MHz@ -10dBm, V
CC
=
2.7V,
V
GC
=2.4V to 0.3V)
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3 @2.7V,Temp.+25C IIP3 @2.7V,Temp.- 40C IIP3 @2.7V,Temp.+85C
IIP3 vs VGC(GSM, Temp=+25oC, -40oC, +85oC)
IF=225.80/226.650MHz, LO=1080MHz @ -10dBm, VCC=3.3V,VGC=2.4V to 0.3V)
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3 @3.3V,Temp. +25C IIP3 @3.3V,Temp. -40C IIP3 @3.3V,Temp. +85C
Preliminary
7-57
RF2689
Rev A4 010815
7
QUADRATURE
DEMODULATORS
IIPE versus VGC(W-CDMA, Temp. 25oC)
(IF Freq. 190MHz, LO Freq. 1520MHz @ -10dBm, VCC=3.3V, 3.0V, 2.7V,
V
GC
=2.4Vto 0.3V)
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3@3.3V,Temp.25C IIP3@3.0V,Temp.25C IIP3@2.7V,Temp.25C
IIP3 versus VGC(W-CDMA, Temp. -40oC)
(IF Freq. 190MHz, LO Freq. 1520MHz @ -10dBm,
V
CC
=3.3V, 3.0V, 2.7V, VGC=2.4V to 0.3V)
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
IIPE (dBm)
IIP3 @3.3V,Temp.- 40C IIP3 @3.0V,Temp.- 40C IIP3 @2.7V,Temp.- 40C
IIP3 versus VGC(W-CDMA, Temp. +85oC)
(IF Freq. 190MHz, LO Freq. 1520MHz @ -10dBm, VCC=3.3V, 3.0V, 2.7V,
V
GC
=2.4Vto 0.3V)
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3@3.3V,Temp.+85C IIP3@3.0V,Temp.+85C IIP3@2.7V,Temp.+85C
IIP3 versus VGC(GSM, Temp -40oC)
(IF=225MHz, LO=1080MHz @ -10dBm,VCC=3.3V,3.0V, 2.7V, VGC=2.4V to 0.3V)
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3 @3.3V,Temp.- 40C IIP3 @3.0V,Temp.-40C IIP3 @2.7V,Temp.- 40C
IIP3 versus VGC(GSM,Temp. +25oC)
(IF=225MHz, LO=1080MHz @ -10dBm,Vcc=3.3V,3.0V, 2.7V,VGC=2.4V to 0.3V)
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3 @3.3V,Temp. +25C IIP3 @3.0V,Temp.+25C IIP3 @2.7V,Temp. +25C
IIP3versusVGC(GSM, Temp. +85oC)
(IF=225MHz, LO=1080MHz @ -10dBm, Vcc=3.3V, 3.0V, 2.7V, V
GC
=
2.4V to
0.3V)
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VGC(V)
IIP3 (dBm)
IIP3 @3.3V,Temp.+85C IIP3 @3.0V,Temp.+85C IIP3 @2.7V,Temp.+85C
Preliminary
7-58
RF2689
Rev A4 010815
7
QUADRATURE
DEMODULATORS
NF versus VGC(GSM)
(IF=225.05MHz, LO=1080MHz @ -10dBm, VCC=3.0V, VGC=2.4Vto 0.3V)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
NF (dB)
N.F[dB]
NF versus VGC(W-CDMA)
if=191MHz,LO=1520MHz @ -10dBm, VCC=3.0V, V
GC
=
2.4V to
0.3V)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
0.20.40.60.81.01.21.41.61.82.02.22.4
VGC(V)
NF (dB)
N.F[dB]
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