Datasheet RF2643, RF2643PCBA Datasheet (RF Micro Devices)

Page 1
6-37
6
MIXERS
Preliminary
Product Description
Ordering Information
Typical Applications
Features
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS
ü
SiGe HBT
Si CMOS
19
SEL18CELL VCC17CELL GND16CELL IN
14 CELL OUT
13 VGC
12 PCS OUT
10
PCS IN
PCS VCC
98
VCC
7
VCC MIX
5IF-
4IF+
3BYPASS
2LO
1PD
Logic
Bias Circuit
* *
* *
*
Represents "GND".
20
CELL
MIXOUT
PCS
MIXOUT
6
11
PCS ATT GND
15
CELL ATT GND
RF2643
3V DUAL-BAND UPCONVERTER
AND DRIVER AMPLIFIER
• TDMA/AMPS Cellular Systems
• CDMA/AMPS Cellular Systems
•PCSSystems
• Portable Battery-Powered Equipment
The RF2643 is a complete upconverter, dual-power amplifier driver and attenuator designed for Cellular and PCS systems. It is designed to upconverter and amplifies RF signals while providing 22dB of linear gain control range. It features digital control for the mixer and drivers. The device features balanced IF inputs, single-ended LO input and dual RF output for Cellular and PCS Systems respectively. The IC is manufactured on an advanced Sili­con Bi-CMOS process and packaged in a 20-pin, 4mmx4mm, leadless chip carrier with an exposed die flag.
• Single Supply 3.0V Operation
• Power Down Control
• Gain Control Range of 22dB
• Driver Amplifier Select Pin (RF Output Select)
• High Linearity in Mixer and Driver Amp
RF2643 3V Dual-Band Upconverter and Driver Amplifier RF2643 PCBA Fully Assembled EvaluationBoard
6
Rev A1 010717
1.00
0.90
4.00 sq.
0.60
0.24 typ
3
0.20
0.75
0.50
0.23
0.13
4PLCS
0.50
2.10 sq.
0.65
0.30
4PLCS
0.05
12°
MAX
Dimensionsi nmm.
Note orientation of package.
NOTES:
Package Warpage: 0.05 mm max.
4
Die Thickness Allowable: 0.305mm max.
5
Pin 1 identifier mustexist on top surfaceof package by identification mark or feature on the package body. Exact shape and size is optional.
2
Shaded lead is Pin 1.
1
Dimension applies to plated terminal: to be measuredbetween 0.02 mm and 0.25 mm fromterminal end.
3
Package Style: LCC, 20-Pin, 4x4
Page 2
Preliminary
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RF2643
Rev A1 010717
6
MIXERS
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +3.6 V
DC
Input RF Power +3 dBm Operating Ambient Temperature -30 to +80 °C Storage Temperature -30 to +150 °C
Parameter
Specification
Unit Condition
Min. Typ. Max.
Upconverter Both Bands
Unless stated otherwise, all data in this sec­tion is for both Cellular and PCS bands. T=25°C, V
CC
=2.75V.
IF Frequency Range 100 250 MHz LO Input Level -9 -6 -2 dBm RF to LO Isolation 20 30 dBm IF to RF Isolation 40 dBm IF to LO Isolation 34 dBm IF Input Impedance Differential 260 IF Input Return Loss Differential 10 dB LO Input Impedance
Single-Ended
50
LO Input Return Loss
Single-Ended
10 dB
RF Output I mpedance
Single-Ended
50
RF Output R eturn Loss
Single-Ended
10 dB
Cellular Band
RF=835MHz, LO=990MHz@-3dBm
RF Output Frequency 824 849 MHz LO Frequency Range 909 1099 MHz IF-RF Conversion Gain -2 0 2 dB Noise Figure 12 13 dB Room Temp.
13 14 Over Temp. Output IP3 (Linearity) 10.5 13.0 dBm See Note 1 (end of parameter table). Output P1dB -3 -1 dBm LO to RF Output Leakage -30 dBm
PCS Band
RF =1880MHz, LO=2030MHz@-3dBm
RF Output Frequency 1850 1910 MHz LO Frequency Range 1950 2160 MHz IF-RF Conversion Gain -2 0 2 dB Noise Figure 14.0 14.5 dB Room Temp.
15.0 16.5 Over Temp. Output IP3 (Linearity) 8.5 12.0 dBm See Note 1 (end of parameter table). Output P1dB -4 -2 dBm LO to RF Output Leakage -17 dBm
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Page 3
Preliminary
6-39
RF2643
Rev A1 010717
6
MIXERS
NOTE 1: OIP3 was measured using a two-tone test. Each injected tone had an input power (at the RF output of the upconverter) of -18dBm with a frequency spacing of 100kHz.
Parameter
Specification
Unit Condition
Min. Typ. Max.
Amplifiers/Attenuators Both Bands
Unless stated otherwise, all data in this sec­tion is for both Cellular and PCS bands. T=25°C, V
CC
=2.75V.
Gain Control Range 17 20 dB Gain Control Voltage 0.8 1.9 V Gain Control Slope 15 35 dB/V Input Impedance
Single-Ended
50
Input Return Loss
Single-Ended
10 dB
Output Impedance
Single-Ended
50
Output Return Loss
Single-Ended
10 dB
RF Output Collector Current
Consumption
10 mA
Upconverter Output to
Amplifier Input
35 40 dB Any load.
Cellular Band
RF Frequency Range 824 849 MHz Maximum Gain 5 7 9 dB Amplifier + Attenuator Noise Figure at Maximum Gain 2.5 dB Amplifier + Attenuator Noise Figure Increase with
Attenuation
0.75 dB/dB
Input IP3 (Linearity) -1 1 dBm @ all gain levels
See Note 1 (end of parameter table).
PCS Band
RF Frequency Range 1850 1910 MHz Maximum Gain 4 6 8 dB Amplifier + Attenuator Noise Figure at Maximum Gain 3.5 dB Amplifier + Attenuator Noise Figure Increase with
Attenuation
0.75 dB/dB
Input IP3 (Linearity) -1 0 dBm See Cellular Band Input IP3 Conditions.
Control and Power Consumption
Unless otherwise stated, all data in this sec­tion is for both Cellular and PCS bands.
Operating Voltage 2.7 3.0 V Power Down Control
2.1 V HIGH (Device ON)
0.5 V LOW (Device OFF) Power Down Pin Impedance 20 k Band-Select Control (BS) 2.1 V PCS (HIGH)
0.5 V Cellular (LOW) Band Select Pi n Impedance 20 k Device OFF Current 10 uA PD=LOW Total Current (PD=HIGH) 30 37 mA Cellular, BS=LOW
33 42 mA PCS, BS=HIGH
Page 4
Preliminary
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RF2643
Rev A1 010717
6
MIXERS
Pin Function Description Interface Schematic
1PD
Power Down Control. When Logic “high” (greater than 2.1V) the device is active andall circuits are operating. When logic “low” (less than 0.5V) the device is inactive and all circuits are turned off.
2LO
Single-ended LO input pin. This pin is internally DC biased and should be DC blocked if it is connected to a device with a DC level present. The single-ended input impedance is 50Ω.
3BYPASS
Bypass pin for internal bi as circuitry. Bypass with 10nF capacito r.
4IF+
Balanced IF input pin. This pin is internally DC biased and should be DC blocked if connected to a devicewith a DC level present. The differ­ential input impedance is 260Ω. For single ended input operation, one pin is used as an input and the other IF input is AC coupled to ground.
5IF-
Same as pin 4, except complementary input.
6PCS
MIXOUT
RF mixer output pin for the PCS system. PCS Mixout output imped­ance depends on the LC match and it is influenced by the bypass capacitor at VCC2.
7VCCMIX
Supply voltage pin for the mixer. External bypassing is required. The trace length betwe en the pin and the bypass capacitors should be min­imized. The ground side of the bypass capacitors should connect immediately to ground plane.
8VCC
Supply voltage pin for all the control and bias circuitry. A bias choke inductor and RF bypass capacitor is required.
9PCSVCC
Supply voltage pin for the PCS driver. This pin is an open collector and it will need a bias choke inductor and RF bypass. A parallel resistor to the inductor improves stability of the driver amplifier.
10 PCS IN
Single-ended input for the PCS driver and attenuator. External match ­ing is required. This pin is internally DC biased and should be DC blocked if it is connected to a device with a DC level present.
11 PCS
ATT GND
PCS attenuator ground pin. This pin should be AC ground. The trace length between the pin andthe bypass capacitors should be minimized. The value of the capacitor is chosen to resonate in the PCS band.
12 PCS OUT
PCS RF output pin. External matching is required. This pin is internall y DC biased and should be DC blocked if it is connected to a device with a DC level present.
VCC
Bias
LO+
B
ias
LO-
IF+ IF- Bypass
VCC MIX
PCS MIXOUT
PCS VCC
PCS IN
PCS ATT-GND
PCS
Attenuator
PCS OUT
Page 5
Preliminary
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RF2643
Rev A1 010717
6
MIXERS
Pin Function Description Interface Schematic
13 VGC
Analog gain control for the driver amplifier. Valid control voltage ranges from 0.8V
DC
to 1.9VDC.
14 CELL OUT
Cellular RF output pin. External matching is required. External match­ing is required. This pin is internally DC biased and should be DC blocked if it is connected to a device with a DC level present.
15 CELL
ATT GND
Cell attenuator ground pin. This pin should be AC ground. The trace length between the pin andthe bypass capacitors should be minimized. The value of the capacitor is chosen to resonate in the PCS band.
16 CELL IN
Singled end inp ut for the cellular driver and attenuator. Extern al match­ing is required. This pin is internally DC biased and should be DC blocked if it is connected to a device with a DC level present.
17 CELL GND
This pin shou ld be choke to ground. The inductor is used to adjust the linearity of the cellular driver.
18 CELL VCC
Supply voltage pin for the cell driver. This pin is an open collector and it will need a bias choke inductor and RFbypass. A parallel resistor to the inductor improves stability of the driver amplifier.
19 SEL
Band select control pin for the drivers. When Logic "high" (greater than
2.1V) the PCS band is active. When logic "low" (less than 0.5V) the CellularBand is active.
20 CELL
MIXOUT
RF mixer output pin for the PCS system. PCS Mixou t output imped­ance depends on the LC match and it is influenced by the bypass capacitor at VCC2.
Pkg
Base
GND
Ground connection. The backside ofthe package should be soldered to a top side ground pad, which is connected to the ground plane. Add i­tional ground connections are offered at each corner of the package for flexibility in layout design.
VGC
CELL ATT-GND
Cell
Attenuator
CELL OUT
CELL VCC
CELL GND
SEL
VCC MIX
CELL MIXOUT
Page 6
Preliminary
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RF2643
Rev A1 010717
6
MIXERS
Applicatio n Schematic
*
Represents "GND".
19 18 17 16
14
13
12
10987
5
4
3
2
1
Logic
Bias Circuit
* *
* *
20
6
11
15
Die
Flag
PD
100 pF
10 nF
C*
C*
13 pF
3.3 nH 1nF
VGC
4.7 nH 1nF
3pF
3pF
3.9 nH CC
10 nF
33 nF
2.2 nH
0.5 pF
0.1 uF
R*
240
10 nH
10 nF
12 nH
R*
390
2pF
10 nF
SEL
0.1 uF
1.5 nH
R*
91
15 nH
10 nF
Cell RF Filter
V
CC1
V
CC2
VCCMIX V
CC
V
CC2
V
CC1
R*
NOTES:
1. All components markedwith "R*" are De-Q resistors.
2. All components marked with "C*" should be present, if IF SAW filter has a direct path to ground.
CELL OUT
PCS RF Filter
LO
IF Filter
IF+
IF-
33 nF
PCS OUT
Page 7
Preliminary
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RF2643
Rev A1 010717
6
MIXERS
Evaluation Board Schematic
IF=155MHz
(Download Bill of Materials from www.rfmd.com.)
*
Represents "GND".
19 18 17 16
14
13
12
10987
5
4
3
2
1
Logic
Bias Circuit
* *
* *
20
6
11
15
Die
Flag
PD
C1
100 pF
50Ωµstrip
J1
LO
C2
10 nF
C3
10 nF
T1
C4
10 nF
50Ωµstrip
J3
PCS MIXOUT
C12
13 pF
L5
3.3 nH
C13 1nF
50Ωµstrip
J6
CELL OUT VGC
L4
4.7 nH
C11 1nF
50Ωµstrip
J5
PCS OUT
C10 3pF
C6
3pF
50Ωµstrip
R4
DNI
L2
3.9 nH CC
VCC2
C7
10 nF
VCC MIX
C25
33 nF
L8
2.2 nH
C27
0.5 pF
C9
0.1 uF
50Ωµstrip
J4
PCS IN
R2
240
L3
10 nH
C8
10 nF
VCC1
C26
33 nF
R3 0
VCC
L1
12 nH
R5
390
C15 2pF
50Ωµstrip
J8
CELL MIXOUT
C17
10 nF
VCC2
SEL
J2 IF
C14
0.1 uF
50Ωµstrip
J7
CELL IN
L6
1.5 nH
R1
91
L7
15 nH
VCC1
C16
10 nF
2643400-
P1
1 2 3
CON3
GND
P1-3 VCC MIX
C19
1uF
+
P1-1 VCC
C18
1uF
+
P2
1 2 3
CON3
SELP2-3
C21
33 nF
GND
PDP2-1
C20
33 nF
P3
1 2 3
CON3
P3-1
C24 DNI
VGC
GND
GND
P4
1 2 3
CON3
GND VCC2P4-3
C23 1uF
+
VCC1P4-1
C22 1uF
+
Page 8
Preliminary
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RF2643
Rev A1 010717
6
MIXERS
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.064”, Board Material FR-4, Multi-Layer
Assembly Top
Inner 1 - Ground Plane 1 Inner2 - Power Plane 1
Page 9
Preliminary
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RF2643
Rev A1 010717
6
MIXERS
Inner 3 - Ground Plane 2 Inner4 - Power Plane 2
Back
Page 10
Preliminary
6-46
RF2643
Rev A1 010717
6
MIXERS
Power Down Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
I
CC
(uA)
Icc, -30º Icc, 25º Icc, 85º
Cellular Current
30.0
30.2
30.4
30.6
30.8
31.0
31.2
31.4
31.6
31.8
32.0
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Current (mA)
Icc,-30º Icc,25º Icc,85º
CellularMixer Conversion Gain
@LO=-10dBm
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Conversion Gain (dB)
Gain, -30º Gain, 25º Gain, 85º
CellularMixer Conversion Gain
@LO=-3dBm
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Conversion Gain (dB)
Gain, -30º Gain, 25º Gain, 85º
CellularLO to RF Leakage
@LO=-10dBm
-38.0
-37.5
-37.0
-36.5
-36.0
-35.5
-35.0
-34.5
-34.0
-33.5
-33.0
-32.5
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
LO to RF Leakage (dBm)
LO2RF, -30º LO2RF, 25º LO2RF, 85º
CellularLO to RF Leakage
@LO=-3dBm
-28.6
-28.4
-28.2
-28.0
-27.8
-27.6
-27.4
-27.2
-27.0
-26.8
-26.6
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
LO to RF Leakage (dBm)
LO2RF,-30º LO2RF,25º LO2RF,85º
Page 11
Preliminary
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6
MIXERS
CellularMixer OIP3
@LO=-10dBm
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
OIP3 (dBm)
OIP3, -30º OIP3, 25º OIP3, 85º
CellularMixer OIP3
@LO=-3dBm
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
OIP3 (dBm)
OIP3,-30º OIP3,25º OIP3,85º
Cellular Mixer Noise Figure
@LO=-10dBm
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Noise Figure (dB)
NF, -30º NF, 25º NF, 85º
Cellular Mixer Noise Figure
@LO=-3dBm
10.0
10.5
11.0
11.5
12.0
12.5
13.0
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Noise Figure (dB)
NF,-30º NF,25º NF,85º
CellularMixer Gain
@ 25°C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
-10.0 -9.0 -8.0 -7. 0 -6.0 -5.0 -4.0 -3.0 -2.0
VCC(V)
Conversion Gain (dB)
2.7V 3V
3.3V
CellularMixer OIP3
@ 25°C
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
-10.0 -9.0 -8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0
LO (dBm)
OIP3 (dBm)
2.7 V 3V
3.3 V
Page 12
Preliminary
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RF2643
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MIXERS
Cellular Mixer Noise Figure
@ 25°C
11.6
11.7
11.8
11.9
12.0
12.1
12.2
-10.0 -9.0 -8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0
LO (dBm)
Noise Figure (dB)
2.7 V 3V
3.3 V
Cellular Gain Driver
@ 25°C
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
0.7 0.9 1.1 1.3 1.5 1.7 1.9
VGC(V)
Gain (dB)
2.7V 3V
3.3V
Cellular Driver IIP3
@ 25°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.70.91.11.31.51.71.92.1
VGC(V)
IIP3 (dBm)
2.7 V 3V
3.3 V
CellularNoise Figure Driver
@ 25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0.70.91.11.31.51.71.92.1
VGC(V)
Noise Figure (dB)
2.7V 3V
3.3V
Cellular Gain Driver
@2.7V
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
0.5 1.0 1.5 2.0
VGC(V)
Gain (dB)
Gain, -30º Gain, 25º Gain, 85º
Cellular Driver IIP3
@2.7V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.70.91.11.31.51.71.92.1
VGC(V)
IIP3 (dBm)
IIP3, -30º IIP3, 25º IIP3, 85º
Page 13
Preliminary
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RF2643
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6
MIXERS
Cellular Driver Noise Figure
@2.7V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0.70.91.11.31.51.71.92.1
VGC(V)
Noise Figure (dB)
NF, -30º NF, 25º NF, 85º
PCS Current
31.5
31.7
31.9
32.1
32.3
32.5
32.7
32.9
33.1
33.3
33.5
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Current (mA)
Icc,-30º Icc,25º Icc,85º
PCS Mixer Conversion Gain
@LO=-10dBm
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Conversion Gain (dB)
Gain, -30º Gain, 25º Gain, 85º
PCS Mixer Conversion
@LO=-3dBm
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Conversion Gain (dB)
Gain, -30º Gain, 25º Gain, 85º
PCSLOtoRFLeakage
@LO=-10dBm
-22.4
-22.3
-22.2
-22.1
-22.0
-21.9
-21.8
-21.7
-21.6
-21.5
-21.4
-21.3
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
LO to RF Leakage (dBm)
LO2RF, -30º LO2RF, 25º LO2RF, 85º
PCSLOtoRFLeakage
@LO=-3dBm
-18.20
-18.15
-18.10
-18.05
-18.00
-17.95
-17.90
-17.85
-17.80
-17.75
-17.70
-17.65
2.70 2.80 2.90 3.00 3.10 3.20 3. 30
VCC(V)
LO to RF Leakage (dBm)
LO2RF, -30º LO2RF, 25º LO2RF, 85º
Page 14
Preliminary
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MIXERS
PCS MixerOIP3
@LO=-10dBm
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
OIP3 (dBm)
OIP3,-30º OIP3,25º OIP3,85º
PCS MixerOIP3
@LO=-3dBm
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
OIP3 (dBm)
OIP3,-30º OIP3,25º OIP3,85º
PCS Mixer Noise Figure
@LO=-10dBm
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Noise Figure (dB)
NF, -30º NF, 25º NF, 85º
PCS Mixer Noise Figure
@LO=-3dBm
12.0
12.5
13.0
13.5
14.0
14.5
15.0
2.7 2.8 2.9 3.0 3.1 3.2 3.3
VCC(V)
Noise Figure (dB)
NF,-30º NF,25º NF,85º
PCS Mixer Conversion Gain
@ 25°C
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
-10.0 -9.0 -8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0
LO (dBm)
Conversion Gain (dB)
2.7 V 3V
3.3 V
PCS MixerOIP3
@ 25°C
11.0
11.2
11.4
11.6
11.8
12.0
12.2
12.4
12.6
-10.0 -9.0 -8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0
LO (dBm)
OIP3 (dBm)
2.7V 3V
3.3V
Page 15
Preliminary
6-51
RF2643
Rev A1 010717
6
MIXERS
PCS Mixer Noise Figure
@ 25°C
13.2
13.3
13.4
13.5
13.6
13.7
13.8
13.9
14.0
14.1
14.2
14.3
-10.0 -9.0 -8.0 -7.0 -6.0 -5.0 -4.0 -3.0 -2.0
LO (dBm)
Noise Figure (dB)
2.7 V 3V
3.3 V
PCS Gain Driver
@ 25°C
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
VGC(V)
Gain (dB)
2.7 V 3V
3.3 V
PCS IIP3 Driver
@ 25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
0.70.91.11.31.51.71.92.1
VGC(V)
IIP3 (dBm)
2.7 V 3V
3.3 V
PCS Noise Figure Driver
@ 25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0.70.91.11.31.51.71.92.1
VGC(V)
Noise Figure (dB)
2.7 V 3V
3.3 V
PCS Gain Driver
@2.7V
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
VGC(V)
Gain (dB)
Gain, -30º Gain, 25º Gain, 85º
PCS IIP3 Driver
@2.7V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.70.91.11.31.51.71.92.1
VGC(V)
IIP3 (dBm)
IIP3,-30º IIP3,25º IIP3,85º
Page 16
Preliminary
6-52
RF2643
Rev A1 010717
6
MIXERS
PCS Noise Figure Driver
@2.7V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0.70.91.11.31.51.71.92.1
VGC(V)
Noise Figure (dB)
NF, -30º NF,25º NF,85º
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