Datasheet RF2638PCBA-DO, RF2638PCBA-PCS-CEL, RF2638PCBA-W, RF2638 Datasheet (RF Micro Devices)

ü

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6

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Product Description

Ordering Information

Typical Applications

Features

Functional Block Diagram

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

SiGe HBT

Si CMOS

1

2

3

4

8

7

6

5

IF-

IF+

BYP

LO-

RF OUT

VCC

GND

LO+

RF2638

W-CDMA AND CDMA UPCONVERTER/

BPSK MODULATOR

• W-CDMA Systems

• PCS/Cellular CDMA Systems

• PHS 1500/WLAN 2400 Systems

• General Purpose Upconv erter

• BPSK Modulation

• Micro-Cell PCS Base Stations

The RF2638 is a complete upconverter designed for cel­lular, PCS and W-CDMA applications. This device may
also be used to directly BPSK modulate a carrier. The
unit operates at 3.0V and is designed as par t of the
RFMD PCS/Cellular CDMA and W-CDMA Chip Sets.

• Supports Dual Mode Operation

• +10dBm Output IP3 (1950MHz)

• +13dBm Output IP3 (830MHz)

• Single 3.0V Power Supply

• Miniature 8-Pin Package

• Double-Balanced Mixer

RF2638 W-CDMA and CDMA Upconverter/ BPSK Modulator
RF2638 PCBA-PCS/CEL Fully Assembled Evaluation Board
RF2638 PCBA-DO Fully Assembled Evaluation Board
RF2638 PCBA-W Fully Assembled Evaluation Board

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NOTES:

1. Shaded lead ispin 1.

2. All dimensions are exclusiveof
flash, protrusions or burrs.

3. Lead coplanarity: 0.002 with
respect to datum "A".

0.012

6° MAX

0° MIN

0.021

+0.004

0.006

+0.002

0.192

+ 0.008

0.0256

0.118

+0.004sq.

0.006

+0.003

0.034

-A-

Package Style: MSOP-8

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Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +5.0 V

DC

Input RF Power +3 dBm
Operating Ambient Temperature -30 to +80 °C
Storage Temperature -30 to +150 °C

Parameter

Specification

Unit Condition

Min. Typ. Max.

Overall

T=25°C, VCC=3.0V

RF Output Frequency Range 500 to 2500 MHz
Spurious Product Rejection 30 dBc Referenced to RF output

Cellular

T=25°C, VCC=3.0V,LO=960MHz@-3dBm,
IF=130MHz@-13dBm

Conversion Gain -1 -0.5 dB RF

OUT

=830MHz

-2.2 -1 dB RF

OUT

=836MHz (Dual-Output board)

Noise Figure 14 dB RF

OUT

=830MHz

Output IP3 +13 dBm P

IN

=-13dBm per Tone, RF out=830MHz

PCS

T=25°C, VCC=3.0V,
LO =1750MHz@-3dBm,

IF=130MHz@-13dBm

Conversion Gain -3.0 -1.5 dB RF

OUT

=1880MHz

-3.5 -2.5 dB RF

OUT

=1880MHz (Dual-Output board)

Noise Figure 15 dB RF

OUT

=1880MHz

Output IP3 +7 +11 dBm P

IN

=-13dBm per Tone, RF out=1880MHz

W-CDMA

T=25°C, VCC=3.0V,
LO =2330MHz@-3dBm,

IF=380MHz@-13dBm
ACPR -58 -57 -56 dBc
Conversion Gain -2.0 -1.0 0 dB RF

OUT

=1950MHz

Noise Figure 13 14 15 dB RF

OUT

=1950MHz

Output IP3 +8 +10 dBm P

IN

=-13dBm per Tone, RF

OUT

=1950MHz

Max OIP3 11 dBm

IF Input

IF Frequency DC 130/380 500 MH z
Differential Input Impedance 220 260 300 Ω IF=130MHz
IF to RF Output Isolation 30 dB
IF to LO Isolation 30 dB

LO Input

LO Frequency Range 300 to 2700 MHz
LO Level -6 to 0 dBm
LO to RF Output Leakage -18 -25 dBm

-15 -17 dBm At Cellular band, high side injection
(Dual-Output board)

-14 -15 dBm At PCS band, low side injection
(Dual-Output board)

RF to LO Isolation 30 dB
LO Input VSWR 2:1 50Ω

Power Supply

Voltage 2.7 3.0 3.3 V
Current Consumption 25 mA

Caution! ESD sensitive device.

RF Micro Devices believes thefurnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

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Pin Function Description Interface Schematic

1IF-

Balanced IF input pin. This p in is internally DC-biased and should be
DC-blocked if connected to a device with a DC levelpresen t. For single­ended input operation, one pin is used as an input and the other IF
input is AC-coupled to ground. The balanced, input impedance is
260Ω.

2IF+

Same as pin 1, except complementary input. See pin 1.

3BYP

Bypass pin for internal bias circuitry.Bypass with a 1nF capacitor.

4LO-

Balanced LO input pin. This pin is internally DC-biased and should be
DC-blocked if connected to a device with a DC levelpresen t. For single­ended input operation, one pin is u sed as an input and the other LO
input is AC-coupled to ground.

5LO+

Same as pin 4, except complementary input. See pin 4.

6GND

Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.

7VCC

Supply voltage pin. External bypassing is required. External RF, LO,
and IF bypassing is required. The trace length between the pin an d the
bypass capacitors should be minimized. The ground side of the bypass
capacitors should connect immediately to ground plane.

8RFOUT

RF output pin.

IF+IF-

130 Ω 130 Ω

BIAS

BYP

LO+LO-

BIAS

300 Ω

RF OUT

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Applicatio n Schematic

836MHz

Applicatio n Schematic

1880MHz

RF OUTIF-

IF+

LO

V

CC

1

2

3

4

8

7

6

5

12 nH

1nF

1nF

1nF

22 pF 22 pF

10 nF

2pF

V

CC

10 nF

RF OUTIF-

IF+

LO

V

CC

1

2

3

4

8

7

6

5

2.7 nH

1nF

1nF

1nF

5pF

5pF

10 nF

1.5 pF

V

CC

10 nF

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Application Schematic

Dual-Band Output (836MHz/1880MHz)

Application Schematic

W-CDMA (1950MHz)

PCS OUT

IF-

IF+

LO

1

2

3

4

8

7

6

5

100 nH

1nF

1nF

1nF

5pF

5pF

10 nF

0.5 pF

V

C

C

10 nF

6.8 nH

4pF 5.6 nH

18 nH

CELL OUT

V

CC

W-CDMA OUT

IF-

IF+

LO

1

2

3

4

8

7

6

5

4.7 nH

1nF

1nF

1nF

5pF

5pF

10 nF

9pF

V

CC

10 nF

V

CC

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Evaluation Board Schema t ic - PCS/Cellular

RF=1880MHz, IF=130MHz

(Download Bill of Mater ia ls from www.rfmd.com.)

Evaluation Board Schematic - Dual Output

Cellular Out=836MHz, PCS Out=1880MHz, IF=130MHz

1

2

3

4

8

7

6

5

C3

*

C4

*

C1

10 nF

VCC

T1

J2

IF IN

J3

RF OUT

2638400-

50 Ω µstrip 50 Ω µstrip

C5

68 pF

L1

270 nH

C2

1nF

J1

LO IN

50 Ω µstrip

C6

*

L2

*

VCC

C7

10 nF

P1-1 VCC

GND
NC

P1

1
2
3

CON3

**Board as provided.

C3* C4*L2* C6*

5pF 5pF2.7 nHPCS** 1.5 pF

22 pF 22 pF12 nHCellular 2pF

Note: Board losses: 0.1 dB, Transformer losses: 1 dB

J4

CELL OUT

50 Ω µstrip

1

2

3

4

8

7

6

5

C3

5pF

C4

5pF

C1

10 nF

VCC

J2

IF IN

J3

PCS O UT

2638401, Rev 1

50 Ω µstrip

50 Ω µstrip

C5

100 pF

C2

1nF

J1

LO IN

50 Ω µstrip

C6

0.5 pF

L2

100 nH

C7

10 nF

P1

1
2
3

CON3

GND

P1-2 VCC

NC

L3

6.8 nH

C8

4pF

L4

18 nH

VCC

Bias Choke Only;

Notpartofmatchingnetwork

L5

5.6 nH

Dual Band, Split Outputs matching network:

Diplexed match at US cellular and PCS transmit bands.

T1

T4-1

C9*

TBD

L1*

TBD

C10*

TBD

Note: Board losses: 0.1 dB, Transformer loss: 1 dB

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Evaluation Board Schematic - W-CDMA

RF=1950MHz, IF=380MHz

1

2

3

4

8

7

6

5

C3

5pF

C4

5pF

C1

10 nF

VCC

T1

T4-1

J2

IF IN

J3

W-CDMA OUT

2638402, Rev -

50 Ω µstrip

50 Ω µstrip

C5

15 pF

C2

1nF

J1

LO IN

50 Ω µstrip

C6

9pF

L2

4.7 nH

VCC

C7

10 nF

P1

1
2
3

CON3

GND

P1-2 VCC

NC

L3

0

Ω

380 MHz

Matching Network

OutputMatching

RF = 1950 MHz

Note: Board losses: 0.1 dB, Transformer loss: 1.62 dB

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Evaluation Board Layout

PCS/Cellular

Board Size 2.0” x 2.0”

Board Thickness 0. 031”, Board Material FR-4

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Evaluation Board Layout

Dual Output

Board Size 2.5” x 1.0”

Board Thickness 0.060”, Board Material FR-4, Multi-Layer

(Intermediate layers (Ground Plane and Power Plane [V

CC1

]) are not shown.)

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Evaluation Board Layout

W-CDMA

Board Size 2.5” x 1.0”

Board Thickness 0.060”, Board Material FR-4, Multi-Layer

(Intermediate layers (Ground Plane and Power Plane [V

CC1

]) are not shown.)