Datasheet RF2494, RF2494PCBA-H Datasheet (RF Micro Devices)

Page 1
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8
FRONT-ENDS
Preliminary
Product Description
Ordering Information
Typical Applications
Features
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS
ü
SiGe HBT
Si CMOS
PD
VCC1
VCC2
MIX OUT-
MIX OUT+
LO IN
RX EN
VCC3
GND3
MIX IN
NC
NC
LNA OUT
VCC4
GS
LNA IN
1
2
3
4
5 6 7 8
9
10
12
13141516
11
Bias
Circuits
LNA
RF AMP
RF2494
HIGH FREQUENCY LNA/MIXER
• Part of 2.4GHz IEEE802.11b WLANs
• Digital Communication Systems
• Spread-Spectrum Communication Systems
• WLAN or Wireless Local Loop
• Portable Battery-Powered Equipment
• UHF Digital and Analog Receivers
The RF2494 is a monolithic integrated UHF receiverfront end suitable for 2.4 G Hz ISM band applications. The IC contains all of the required components to implement the RF functions of the receiver except for the passive filter­ing and LO generation. It contains an LNA (low-noise amplifier), a second RF amplifier and a doubly balanced mixer. The output of the LNA is made available as an out­put to permit the insertion of a bandpass filter between the LNA and the RF/Mixer section. The mixer outputs can beselectivelydisabledtoallowfortheIFfiltertobeused in the transmit mode.
• Single 2.7V to 3.6V Power Supply
• 2400MHz to 2500MHz Operation
• Two Gain Settings: 28dB or 12dB
•4.5dBCascadedNF,HighGainMode
• 20mA DC Current Consumption
• Input IP
3
: -23dBm or -8dBm
RF2494 High Frequency LNA/Mixer RF2494 PCBA-H Fully Assembled Evaluation Board (2.5GHz)
8
Rev A0 010730
Dimensions in mm.
1.85
1.55 sq.
.60 .24 typ
.75 .50
.23 .13
4PLCS
.65 .30
4PLCS
4.00 sq.
2
.35 .23
.65
.05 .01
12°
max
1.00
0.85
.80 .65
NOTES:
Shaded Pin is Lead 1.1
5 Die thickness allowable: 0.305 mm max.
Package Warpage: 0.05 max.
4
Pin 1 identifier must exist on top surfaceof package by identification mark or feature on the package body. Exact shape and size is optional.
3
Dimension applies to plated terminal and is measured between 0.02 mm and
0.25 mm fromterminal end.
2
Package Style: LCC, 16-Pin, 4x4
Page 2
Preliminary
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FRONT-ENDS
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to 3.6 V
DC
Input LO and RF Levels +6 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C
Parameter
Specification
Unit Condition
Min. Typ. Max.
Overall
T=25°C, VCC=3V,RF=2442MHz,
LO =2068MHz, -10dBm RF Frequency Range 2400 to 2500 MHz IF Frequency Range 10 374 500 MHz Cascade Gain 26 28 31 dB IF=374MHz, GAIN SEL=1
13 15 17 dB IF=374MHz, GAIN SEL=0
Cascade IP3 -29 -22 -19 dBm Referenced to the input, GAIN SEL = 1
-8 dBm Referenced to the input, GAIN SEL = 0
Cascade Noise Figure 4.5 dB Single sideband, GAIN SEL = 1
18 dB Single sideband, GAIN SEL = 0
Input P1dB -28 dBm GAIN SEL = 1
-14 dBm GAIN SEL = 0
LNA
Noise Figure 2.3 dB GAIN SEL = 1
7 dB GAIN SEL = 0 Input VSWR 2:1 No external matching Input IP3 -3 dBm GAIN SEL = 1
-3 dBm GAIN SEL = 0
Gain 10 dB GAIN SEL = 1
-6 dB GAIN SEL = 0 Reverse Isolation 22 dB Output Impedance 50
RF Amp and Mixer
Noise Figure 10 dB Single sideband Input Impedance 50 Input IP3 -17 dBm Conversion Power Gain 18 dB With Current Combiner (1kbetween open
collectors and 250single ended load)
Output Impedance 4 k Open Collector
LO Input
LO Level -15 -10 0 dBm LO to RF Rejection 42 dB LO input to LNA input LO to IF Rejection 15 dB LO input to IF output LO Input VSWR 2:1
Power Down Control
Logic Controls “ON” VCC-0.3 V Voltage at the input of RX EN, PD Logic Controls “OFF” 300 mV and GAIN SEL
Turn on Time 400 1000 nS From PD Going high. Turn on Time 100 200 nS From RX EN Going high. PD = “1”
Power Supply
Voltage 2.7 3.3 3.6 V Current Consumption 15 17 26 mA GAIN SEL =1, RX EN=1, PD=1
17 26 mA GAIN SEL=0, RX EN=1, PD=1
8 10 16 mA GAIN SEL=X, RX EN=0, PD=1
0.2 1 µA GAIN SEL =X, RX EN= X, PD=0
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Page 3
Preliminary
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FRONT-ENDS
Pin Function Description Interface Schematic
1PD
The power enable pin. When PD is >VCC-300mV, the part is biased on. When PD is <300mV,then the part is turned off and typically draws
less than 1µA.
2VCC1
Supply voltage for bias circuits and logic control. A 10pF external bypass capacitor is required and an additional 0.01µF is required if no other low frequency bypass capacitors are nearby. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane.
3VCC2
Supply voltage for LO_Buffer. A 10pF bypass capacitor is required and an additional 0.01µF is required if there is no other low frequency bypass capacitor in the area. The trace length be tween the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane.
See pin 6.
4MIXOUT-
The inverting ope n collector output of the mixer. This pin needs to be externally biased and DC isolated from other parts of the circui t. This output can drive a Balun, with MIXOUT+, to convert to unbalanced to drive a SAW filter. The Balun can be either broadband (transformer) or narrowband (discrete LC matching). Alternatively, MIXOUT+ may be used alone to drive a SAW single-ended, with an RF choke (high Z at IF) from VCC to MIXOUT-.
5MIXOUT+
The non-inverting open collector output of the mixer. This pin needs to be externally biased and DC isolated from other parts of the circuit. This output can drive a Balun,with M IXOUT+, toconvertto unbalanced to drive a SAW filter. The Balun can be either broadband (transformer ) or narrowband (discrete LC matching). Alternatively,MIXOUT+ maybe used alone to drive a SAW single-ended, with an RF choke (high Z at IF) from VCC to MIXOUT+.
See pin 4.
6LOIN
LO input pin. This input needs a DC-blocking cap. External matching is recommended to 50Ω.
7RXEN
This control pin allows the mixer output pins to be put into a high impedance state. This allows the transmit signal path to share the same IF filter as the receiver.
8VCC3
Supply voltage for mixer preamp. See pin 10.
9GND3
Ground pin for mixer preamp. This lead inductance is intended to be similar to VCC3 lead inductance.
See pin 10.
10 MIX IN
Mixer RF Input port. This pin is NOT internally DC-blocked.An external blocking capacitor must be provided if the pin is connected to a device with DC present. A value of >22pF is recommended. To minimize the noise figure it is recommended to have a bandpass filter before this input. This will prevent the noise at the image frequency from being convertedtotheIF.
11 NC
Not connected.
12 NC
Not connected.
MIX OUT+ MIX OUT-
LO IN
VCC2
VCC3
GND3
MIX IN
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Preliminary
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FRONT-ENDS
Pin Function Description Interface Schematic
13 LNA OUT
RF signal output for external 50filtering.The use of a filter here is optional but does provide for lower noise floor and better out-of-band rejection.
See pin 14.
14 VCC4
Supply voltage for the LNA. This pin should be bypassed with a 10 pF capacitor to ground as close to the pin as possible. The shunt induc­tance from thi s pin to ground via the supply de coupling must be tuned to match the LNA output to 50at the desired operating frequency.
15 GS
LNA gain control. When GAIN SEL is >VCC-300mV, LNA gain is at 10 dB. When GAIN SEL is <300mV, the LNA gain is -6dB.
See pin 14.
16 LNA IN
This pin is NOT internally DC blocked. An external blocking capacitor must be provided if the pin is connected to a device with DC p resent. If a blocking capacitor is required, a value of 2pF is recommended.
See pin 14.
P2
LNA IN
BIAS
VCC4
P1
GAIN SEL
P15
LNA OUT
EXTERNAL
DECOUPLING
Microstrip
-16 dB
Page 5
Preliminary
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FRONT-ENDS
Th
eory of Operation
RX
15 dB Gain
IL =1-3 dB
2.4 to 2.483 GHz
LNA
Dual Gain Modes
-5 dBand +10dB
Gain Select
RF2494
SSOP-16EPP
Filter
2.4 to 2.483 GHz
SAW
IL =10 dB max
RX
TX
15 dB
15 dB
IF Amp
-15dBto35dBGain
OUT Q
OUT I
Filter
Filter
Selectable LPF
TX
Σ
I INPUT
QINPUT
15 dB Gain
Range
+45
°
-45°
IL = 1-3 dB
2.4 to 2.483 GHz
10 dBm
PA Driver
RF2948
Base Band Amp.
Active Selectable LPF
(f
C
=1MHzto40MHz)
0-30 dB Gain
RF Micro Devices
2.4 GHz ISM Chipset
* 2
RX VGC
TXVGC
IF
VCO
RF
VCO
Dual Frequency Synthesizer
T/R
Switch
RF2189
Figure 1. Entire Chipset Functional Block Diagram
The RF2494 contains the LNA/Mixer for this chipset. The LNA is made from two stages including a common emitter amplifier stage with a power gain of 13dB and an attenuator which has an insertion loss of 3dB in high gain mode, and 17dB in low gain mode. The attenuator was put after the LNA so that system noise figure degradation would be minimized. A single gain stage was used prior to the image filter to maximize IP3 which minimizes the risk of large out-of-bad signals jamming the desired signal.
The mixer on the RF2494 is also two stages. The first stage is a common emitter amp used to boost the total power gain prior to the lossy SAW filter, to convert to a differential signal to the input of the mixer, and to improve the noise figure of the mixer. The second stage is a double balanced mixer whose output is dif­ferential open collector. It is recommended that a “cur­rent combiner” is used (as shown in figure 2) at the mixer output to maximize conversion gain, but other loads can also be used. The current combiner is used to do a differential to single ended conversion for the SAW filter. C1, C2 and L1 are used to tune the circuit for a specific IF frequency. L2 is a choke to supply DC current to the mixer that is also used as a tuning ele­ment, a long with C3, to match to the SAW filter’s input impedance. RL is the SAW filter’s input impedance.
The mixer power conversion gain is +19dB when R1 is set to 1k. The conversion gain can be adjusted up ~5 dB or down ~7dB by changing the value of R1. Once R1 is chosen, L2 and C3 can be used to tune the output for the SAW filter.
The cascaded power gain of the LNA /Mixer is 29dB, which after insertion loss in the image filter (~3 dB) and IF SAW filter (~10dB), still gives 16dB of gain prior to the IF amps. Because of this, the noise figure of the IF amps should not significantly degrade system noise figure.
The LNA input should be matched for a good retur n loss for optimum gain and noise figure. To allow the designer to match each of these ports, 2-port s-param­eter data is available for the LNA, and 1-port data is available for MIXER IN and LO IN.
L1 R1
C1 C2
L2
C3
RL
V
CC
OUT
Open Collector
Mixer Output
Figure 2. Current Combiner for Mixer Load
Page 6
Preliminary
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FRONT-ENDS
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
1
2
3
4
5 6 7 8
9
10
12
13141516
11
Bias
Circuits
LNA
RF AMP
PD
C19
22 pF
C4
10 nF
VCC1, VCC2
L2
120 nH
R1
2.2 k
C11
0.5 pF
C12
0.5 pF
L1
100 nH
C6
10 nF
C15
22 pF
50 Ωµstrip
J3
IF OUT
L3
8.2 nH
C16 1pF
50 Ωµstrip
C18
10 nF
50 Ωµstrip
J5
LO IN
RX EN
VCC3
C21
22 pFC710 nF
C17
10 nF
L5
1.8 nH
C2
0.5 pF
50 Ωµstrip
R3
0
R5* 0
50 Ωµstrip
J4
MIX IN
IN GND OUT
FL1
R2
0
R4* 0
50 Ωµstrip
J2
LNA OUT
50 Ωµstrip
C10
1.5 pF
C5
10 nF
R6
10
VCC4GS
C9
10 nF
C8
2pF
L6
4.7 nH
50 Ωµstrip
J1
LNA IN
2494400-
P1
1 2 3
CON3
GND
P1-3 PD
VCC1, VCC2P1-1
C3
10 nF
P2
1 2 3
CON3
GND
P2-1 GS
P2-3
C20
10 nF
VCC4
P3
1 2 3
CON3
GND
P3-1 VCC3
P3-3 RX EN
* For cascaded configuration,
jumpersR2 and R3 need tobe installed with R4 and R5 taken out.
Page 7
Preliminary
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FRONT-ENDS
Evaluation Board Layout
Board Size 1.5” x 1.5”
Board Thickness 0.031”, Board Material FR-4, Multi-Layer
NOTE: In the following charts, all cascaded data measured with a bandpass filter inserted between LNA OUT and MIX IN, having cut frequencies: f
L
=TBD,fM= TBD, and insertion loss=TBD.
Page 8
Preliminary
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FRONT-ENDS
LNA + Mixer Gain versus VCC (2.45 GHz),
Attenuator Off
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
2.73.03.33.6
VCC
Gain (dB)
-40C Gain 25C Gain 85C Gain
LNA + Mixer IIP3 versus VCC(2.45 GHz),
Attenuator Off
-31.0
-30.0
-29.0
-28.0
-27.0
-26.0
-25.0
-24.0
2.73.03.33.6
VCC
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
LNA + Mixer Gain versus RF Frequency (3.3 V),
Attenuator Off
26.00
27.00
28.00
29.00
30.00
31.00
32.00
33.00
34.00
2.40 2.45 2.50
RF Frequency (GHz)
Gain (dB)
-40C Gain 25C Gain 85C Gain
LNA + Mixer IIP3 versus RF Frequency (3.3V),
Attenuator Off
-32.00
-31.00
-30.00
-29.00
-28.00
-27.00
-26.00
-25.00
-24.00
2.40 2.45 2.50
RF Frequency (GHz)
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
LNA + Mixer Gain versus VCC (2.45 GHz),
Attenuator On
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
2.73.03.33.6
VCC
Gain (dB)
-40C Gain 25C Gain 85C Gain
LNA + Mixer IIP3 versus VCC(2.45 GHz),
Attenuator On
-10.4
-10.2
-10.0
-9.8
-9.6
-9.4
-9.2
-9.0
-8.8
-8.6
2.7 3.0 3.3 3.6
VCC
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
Page 9
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FRONT-ENDS
LNA + Mixer SSB Noise Figure versus VCC (2.45 GHz),
Attenuator Off
4.4
4.6
4.8
5.0
5.2
5.4
5.6
2.7 3.0 3.3 3.6
VCC
SSB Noise Figure (dB)
25C NF 85C NF
-40C NF
L
NA + Mixer SSBNoise Figure versus
RF Frequency (3.3 V), Attenuator Off
3.00
3.50
4.00
4.50
5.00
5.50
2.40 2.45 2.50
RF Frequency (GHz)
SSB Noise Figure (dB)
25C NF 85C NF
-40C NF
LNA + Mixer SSB Noise Figure versus VCC (2.45 GHz),
Attenuator On
17.8
18.0
18.2
18.4
18.6
18.8
19.0
19.2
19.4
19.6
19.8
2.73.03.33.6
VCC
SSB Noise Figure (dB)
25C NF 85C NF
-40C NF
LNA+MixerSSBNoiseFigureversus
RF Frequency (3.3 V), Attenuator On
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
2.40 2.45 2.50
RF Frequency (GHz)
SSB Noise Figure (dB)
25C NF 85C NF
-40C NF
LNA + Mixer Gain versus RF Frequency (3.3 V),
Attenuator On
9.00
9.50
10.00
10.50
11.00
11.50
12.00
12.50
13.00
13.50
14.00
14.50
15.00
2.40 2.45 2.50
RF Frequency (GHz)
Gain (dB)
-40C Gain 25C Gain 85C Gain
LNA + Mixer IIP3 versus RFFrequency (3.3 V),
Attenuator On
-11.00
-10.50
-10.00
-9.50
-9.00
-8.50
-8.00
-7.50
-7.00
2.40 2.45 2.50
RF Frequency (GHz)
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
Page 10
Preliminary
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FRONT-ENDS
LNA + Mixer Gain versus IF Frequency (3.3 V)
26.0
27.0
28.0
29.0
30.0
31.0
32.0
0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 450.0 500.0
IF Frequency (MHz)
Gain (dB)
Gain
LNA + Mixer IIP3 versus IF Frequency (3.3 V)
-31.0
-30.0
-29.0
-28.0
-27.0
-26.0
-25.0
-24.0
-23.0
0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 450.0 500.0
IF Frequency (MHz)
IIP3 (dBm)
IIP3
LNA ICCversus VCC
(PD = 1, RX EN = 0)
10.9
11.1
11.3
11.5
11.7
11.9
12.1
12.3
12.5
12.7
2.73.03.33.6
VCC
I
CC
(mA)
25C LNA Icc 85C LNA Icc
-40C LNA Icc
Total ICCversus VCC
(PD = 1, RX EN = 1)
18.0
18.5
19.0
19.5
20.0
20.5
21.0
2.73.03.33.6
VCC
I
CC
(mA)
25C Total Icc 85C Total Icc
-40C Total Icc
Isolation
-48.00
-43.00
-38.00
-33.00
-28.00
-23.00
-18.00
-13.00
2.12 2.17 2.22
LO Frequency (GHz)
Isolation (dB)
LO-mixin LO-LNAin LNAin-LNAout LO-IFout
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Preliminary
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FRONT-ENDS
LNA Gain versus VCC (2.45 GHz),
Attenuator Off
9.5
9.6
9.7
9.8
9.9
10.0
10.1
10.2
10.3
10.4
10.5
2.73.03.33.6
VCC
Gain (dB)
-40C Gain 25C Gain 85C Gain
LNA IIP3 versus VCC (2.45 GHz),
Attenuator Off
-2.8
-2.7
-2.6
-2.5
-2.4
-2.3
-2.2
-2.1
-2.0
2.7 3.0 3.3 3.6
VCC
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
LNA Gain versus VCC (2.45 GHz),
Attenuator On
-5.6
-5.4
-5.2
-5.0
-4.8
-4.6
-4.4
-4.2
-4.0
2.7 3.0 3.3 3.6
VCC
Gain (dB)
-40C Gain 25C Gain 85C Gain
LNA IIP3 versus VCC (2.45 GHz),
Attenuator On
-3.0
-2.8
-2.6
-2.4
-2.2
-2.0
-1.8
2.7 3.0 3.3 3.6
VCC
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
LNA Gain versus RF Frequency (3.3 V),
Attenuator Off
9.70
9.80
9.90
10.00
10.10
10.20
10.30
10.40
10.50
10.60
10.70
2.40 2.45 2.50
RF Frequency (GHz)
Gain (dB)
-40C Gain 25C Gain 85C Gain
LNA IIP3 versus RF Frequency (3.3 V),
Attenuator Off
-3.50
-3.00
-2.50
-2.00
-1.50
-1.00
-0.50
0.00
2.40 2.45 2.50
RF Frequency (GHz)
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
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Preliminary
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FRONT-ENDS
LNA Gain versus RF Frequency (3.3 V),
Attenuator On
-5.50
-5.30
-5.10
-4.90
-4.70
-4.50
-4.30
-4.10
-3.90
-3.70
2.40 2.45 2.50
RF Frequency (GHz)
Gain (dB)
-40C Gain 25C Gain 85C Gain
LNA IIP3 versus RF Frequency (3.3 V),
Attenuator On
-2.90
-2.80
-2.70
-2.60
-2.50
-2.40
-2.30
-2.20
-2.10
-2.00
-1.90
2.40 2.45 2.50
RF Frequency (GHz)
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
LNA Noise Figure versusVCC (2.45 GHz),
Attenuator Off
2.10
2.12
2.14
2.16
2.18
2.20
2.22
2.24
2.26
2.28
2.30
2.32
2.70 3.00 3.30 3.60
VCC
Noise Figure (dB)
-40C NF 25C NF 85C NF
LNA Noise Figure versus RF Frequency (3.3 V),
Attenuator Off
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
2.50
2.40 2.45 2.50
RF Frequency (GHz)
Noise Figure (dB)
-40C NF 25C NF 85C NF
LNA Noise Figure versusVCC (2.45 GHz),
Attenuator On
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
2.7 3.0 3.3 3.6
VCC
Noise Figure (dB)
-40C NF 25C NF 85C NF
LNA Noise Figure versus RF Frequency (3.3 V),
Attenuator On
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
2.40 2.45 2.50
RF Frequency (GHz)
Noise Figure (dB)
-40C NF 25C NF 85C NF
Page 13
Preliminary
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FRONT-ENDS
MixerGain versus VCC (2.45 GHz)
16.0
17.0
18.0
19.0
20.0
21.0
22.0
2.73.03.33.6
VCC
Gain (dB)
-40C Gain 25C Gain 85C Gain
Mixer IIP3 versus VCC (2.45 GHz)
-18.0
-17.5
-17.0
-16.5
-16.0
-15.5
-15.0
-14.5
2.7 3.0 3.3 3.6
VCC
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
MixerGain versus RF Frequency (3.3 V)
16.00
17.00
18.00
19.00
20.00
21.00
22.00
2.40 2.45 2.50
RF Frequency (GHz)
Gain (dB)
-40C Gain 25C Gain 85C Gain
MixerIIP3 versus RF Frequency (3.3 V)
-18.50
-18.00
-17.50
-17.00
-16.50
-16.00
-15.50
-15.00
2.40 2.45 2.50
RF Frequency (GHz)
IIP3 (dBm)
-40C IIP3 25C IIP3 85C IIP3
MixerSSB Noise Figureversus VCC (2.45 GHz)
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
2.73.03.33.6
VCC
SSB Noise Figure (dB)
-40C NF 25C NF 85C NF
MixerSSB NoiseFigure versusRF Frequency(3.3 V)
7.00
8.00
9.00
10.00
11.00
12.00
13.00
2.40 2.45 2.50
RF Frequency (GHz)
SSB Noise Figure (dB)
-40C NF 25C NF 85C NF
Page 14
Preliminary
8-66
RF2494
Rev A0 010730
8
FRONT-ENDS
MixerGain versus LO Amplitude
(VCC= 3.3 V, RF Frequency = 2.45 GHz)
14
15
16
17
18
19
20
-24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Amplitude(dBm)
Gain (dB)
Gain
Mixer IIP3 versus LO Amplitude
(VCC= 3.3 V, RF Frequency = 2.45 GHz)
-20
-19
-18
-17
-16
-15
-14
-24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
LO Amplitude(dBm)
IIP3 (dBm)
IIP3
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