Datasheet RF2483 Datasheet (RF Micro Devices)

Preliminary

1

RF2483

5

Typical Applications

• TDMA/GSM/EDGE Handsets

• GSM/EDGE Handsets

• W-CDMA Handsets

Product Description

The RF2483 is a dual-band direct I/Q to RF modulator
designed for handset applications where multiple modes
of operation are required. The device provides common
differential I/Q inputs and a common AGC amplifier. Inde­pendent single-ended LO inputs and single-ended high
and low band RF outputs are provided. The device
achieves a very low out-of-band noise density of

-156dBm/Hz minimizing RF filtering. Operating from a
single 2.7V supply, the device is packaged in a
4mmx4mm, 20-pin, plastic leadless chip carrier.

LOW NOISE DUAL-BAND QUADRATURE

MODULATOR WITH AGC

• TDMA-Based Wireless Applications

• Wireless Local Loop

• Basestations

max

.00

0.85

.80
.65

12°

.05
.01

NOTES:

1
2

3

4
5

.60
.24 typ

.30

3

.18

.75
.50

Shaded Pin is Lead 1.

Pin 1 identifier must exist on top surface of package byidentification
mark or feature on the package body. Exact shape and sizeis optional.

Dimension applies to plated terminal: to be measured between 0.02
mm and 0.25 mm from terminal end.

Package Warpage: 0.05 mm max.
Die Thickness Allowable: 0.305 mm max.

4.00
sq.

.50

4 PLCS

1.85

1.55 sq.

.23
.13

.65
.30

4 PLCS

5

UPCONVERTERS

MODULATORS AND

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

SiGe HBT

ü

GND2

RF OUT HB

GND3

* *

* *

1VCC3

2VCC2

3ISIG P

4ISIG N

5EN

20

Mode

Control
Biasing

6 7

VCC1

19

&

+45°

-45°

LO LB

17

18

Σ

+45°

-45°

8

9

GND LO

RF OUT LB

Power
Control

LO HB

Si CMOS

GC

16

15 GC DEC

14 VREF

13 QSIG P

12 QSIG N

11 BAND SEL

10

Represents "GND".

*

GND1

Functional Block Diagram

Package Style: LCC, 20-Pin, 4x4

Features

• Dual-Band Operation 700-2200MHz

• -156dBm/Hznoise@20MHz offset

•+19dBmOIP3

•+6dBmOP1dB

• 35dB Gain Control Range

• Single 2.7V to 3.3V Supply

Ordering Information

RF2483 Low N oise Dual-Band Quadrature Modulator with

RF2483 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

AGC

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A2 010904

5-29

RF2483

Absolute Maximum Rat ings

Parameter Rating Unit

Supply Voltage -0.5 to 3.6 V
Storage Temperature -40 to +150 °C
Operating Ambient Temperature -40 to +85 °C
Input Voltage, any pin -0.5 to 3.6 V
Input Power, any pin +10 dBm

Preliminary

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

5

Parameter

Min. Typ. Max.

Specification

Unit Condition

Operating Range

Supply Voltage* 2.7 3.3 V
Temperature Range* -40 +85 °C
High Band Frequency Range* 1700 2200 MHz Bandsel=2.7V
Low Band Frequency Range* 700 1000 MHz Bandsel=0V

DC Parameters

High Band Supply Current 65 85 110 mA GC=2.0V, VCC=2.7V, EN=2.7V,

Bandsel=2.7V, IQ=1.2V

Low Band Supply Current 65 85 110 mA GC= 2.0V,V

Bandsel=0V, IQ=1.2V

Sleep Current <1.0 10 µAEN=0V

UPCONVERTERS

MODULATORS AND

Logic Levels

Input Logic Low 0 0.5 V
Input Logic High 1.4 V

Logic Pins Input Current* <1.0 µA

CC

V

=2.7V, EN=2.7V,

CC

DC,TA

DC,TA

=25oC

=25oC

LO Input Port

High Band Frequency Range* 1700 2200 MHz Bandsel=2.7V
Low Band Frequency Range* 700 1000 MHz Bandsel=0V
High Band LO Input Power* -3 0 6 dBm Bandsel=2.7V
LO Band LO Input Power* -3 0 6 dBm Bandsel=0V
Input Impedance* 50 Ω

5-30

Rev A2 010904

Preliminary

RF2483

Parameter

Min. Typ. Max.

I/Q Modulator High Band

Baseband Input Voltage* 1.15 1.2 1.25 V Common mode voltage
Baseband Input Level 0.8 V

Baseband Input Impedance* 5.5 kΩ Measured at 100kHz
Input Bandwidth* 50 150 MHz I/Q source impedance 50Ω
Sideband Suppression 30 43 dBc GC=2.0V, no I/Q adjustment

Carrier Suppression 30 48 dBc GC=2.0V, no I/Q ad justment

3rd Harmonic of Modulation
Suppression at FLO-3x100kHz 40 47 dBc GC =2.0V

Baseband Inputs DC Current

Drain*

Baseband Inputs AC Current

Drain*

I/Q Modulator Low Band

Baseband Input Voltage* 1.15 1.2 1.25 V Common mode voltage
Baseband Input Level 0.8 V

Baseband Input Impedance* 5.5 kΩ Measured at 100kHz
Input Bandwidth* 50 150 MHz I/Q source impedance 50Ω
Sideband Suppression 30 37 dBc GC= 2.0V,no I/Q adjustment

Carrier Suppression 30 52 dBc GC=2.0V,no I/Q adjustment

3rd Harmonic of Modulation
Suppression at FLO-3x100kHz 40 59 dBc GC=2.0V

Baseband Inputs DC Current

Drain*

Baseband Inputs AC Current

Drain*

Specification

30 43 dBc GC=1.5V, no I/Q ad justment
30 46 dBc GC=1.0V, no I/Q ad justment
30 47 dBc GC=0.5V, no I/Q ad justment

30 44 dBc GC=1.5V, no I/Q ad justment
25 40 dBc GC=1.0V, no I/Q ad justment
25 35 dBc GC=0.5V, no I/Q ad justment

40 47 dBc GC=1.5V
35 42 dBc GC=1.0V
35 42 dBc GC=0.5V

100 µA

100 µA

30 37 dBc GC=1.5V,no I/Q adjustment
30 44 dBc GC=1.0V,no I/Q adjustment
30 40 dBc GC=0.5V,no I/Q adjustment

30 50 dBc GC=1.5V,no I/Q adjustment
25 33 dBc GC=1.0V,no I/Q adjustment
15 22 dBc GC=0.5V,no I/Q adjustment

40 59 dBc GC=1.5V
35 48 dBc GC=1.0V
35 41 dBc GC=0.5V

100 µA
100 µA

Unit Condition

VCC=2.7V, EN=2.7V, Bandsel=2.7V,
FLO=0dBm, PLO=1900MH z, LO HB and

PP

PP

RF OUT HB ports are matched to 50Ω.
IQ=800mV

signals driven differentially and in quadrature
from a 50Ω source impedance. T

Measured differentially

PP

VCC=2.7V, EN=2.7V, Bandsel=0V,
FLO=0dBm, PLO=900MHz, LO LB and RF

OUT LB ports are matched to 50Ω.
IQ=800mV

signals driven differentially and in quadrature
from a 50Ω source impedance. T

Measured differentially

PP

at 100kHz 1.2VDC. Input IQ

P-P

at 100kHz 1.2VDC. Input IQ

P-P

=25oC

A

=25oC

A

5

UPCONVERTERS

MODULATORS AND

Rev A2 010904

5-31

RF2483

Preliminary

5

Parameter

Min. Typ. Max.

Variable Gain Amplifiers
High Band

Gain Control Voltage Range 0 2.0 V
Gain Con trol Range 32 35 dB Difference between output power at

Gain Control Slope 23 29 dB/V Calculated GC=1.0V and 1.5V
Gain Con trol Input Impedance* 10 kΩ
Output Power -3 0.4 3 dB GC=2.0V, IQ=800mV

Output No ise at FLO+20MHz* -155 dBm/Hz GC=2.0V, IQ=800mV

Output P1dB* +6 dBm IQ at 100kHz
Output IP3* +20 dBm GC= 2 .0V. Extrapolated from IM3 with two

UPCONVERTERS

MODULATORS AND

Intermodulation IM3 tone at

FLO+70kHz and
FLO+130kHz relative to tone
at FLO+90kHz

Specification

-11 -7 -5 dB GC=1.5V, IQ=800mV

-23 -20 -17 dB GC=1.0V, IQ=800mV

-36 -35 -30 dB GC=0.5V, IQ=800mV

-156.7 dBm/Hz GC=2.0V, IQ=0mV

40 50 dBc GC=2.0V
40 50 dBc GC=1.5V
30 35 dBc GC=1.0V
30 35 dBc GC=0.5V

Unit Condition

VCC=2.7V,E N=2.7V, Bandsel=2.7V,
FLO=0dBm, PLO=1900MHz, LO HB and

RF OUTHB ports are matchedto 50Ω. Input
IQ signals driven differentially and in quadra­ture from a 50Ω source impedance.

=25oC

T

A

GC=2.0V and GC=0.5V

P-P

baseband tones at 90kHz applied differen­tially,in quadrature, a t both I and Q inputs,
each tone 400mV

Two baseband tones at 90kHz and 110kHz
applied differentially, in quadrature, at both I
and Q inputs, each tone 400mV

P-P

P-P
P-P
P-P
P-P
P-P

.

at 100kHz
at 100kHz
at 100kHz
at 100kHz
at 100kHz

P-P

.

5-32

Rev A2 010904

Preliminary

RF2483

Parameter

Min. Typ. Max.

Variable Gain Amplifiers
Low Band

Gain Control Voltage Range 0 2.0 V
Gain Control Range 32 36 dB Difference between output power at

Gain Control Slope 27 33 dB/V Calculated using output power at GC=1.0V
Gain Control Input Impedance* 10 kΩ

Output Power -3 0.8 3 dB GC=2.0V, IQ=800mV

Output Noise at FLO+20MHz* -156.4 dBm/Hz GC=2.0V, IQ=800mV

Output P1dB* +6 dBm IQ at 100kHz
Output IP3* +19 dBm GC=2. 0V. Extrapolated from IM3 with two

Intermodulation IM3 tone at

FLO+70kHz and
FLO+130kHz relative to tone
at FLO+90kHz

Specification

-10 -6 -4 dB GC=1.5V, IQ=800mV

-25 -21 -19 dB GC=1.0V, IQ=800mV

-38 -35 -32 dB GC=0.5V, IQ=800mV

-157.2 dBm/Hz GC=2.0 V, IQ=0mV

40 47 dBc GC=2.0V
40 49 dBc GC=1.5V
30 41 dBc GC=1.0V
25 31 dBc GC=0.5V

Unit Condition

VCC=2.7V, EN=2.7V, Bandsel=0V,
FLO=0dBm, PLO=900MHz, LO LB and RF

OUT LB ports are matched to 50Ω. Input IQ

1.2Vdc, signals driven differentially and in
quadrature from a 50Ω source impedance.

=25oC

T

A

GC=2.0V and 0.5V
and 1.5V

P-P

baseband tones at 90kHz and 110kHz
applied differentially, in quadrature, at both I
and Q inputs, each tone 400mV

Two baseband tones at 90kHz and 110kHz
applied at both I and Q inputs, each tone
400mV

P-P

.

at 100kHz

P-P

at 100kHz

P-P

at 100kHz

P-P

at 100kHz

P-P

at 100kHz

P-P

P-P

.

5

UPCONVERTERS

MODULATORS AND

*=Nottestedinproduction

MODE EN BANDSEL COMMENTS

Sleep 0 X I/Q and GC inputs go open circuit through the

use of a FET switch in sleep mode.

High Band Mode 1 1 LO input LO HB

RF output=RF OUT HB

Low Band Mode 1 0 LO input LO LB

RF output=RF OUT LB

Rev A2 010904

5-33

RF2483

Preliminary

Pin Function Description Interface Schematic

1 VCC3

Supply for RF output circuits.

VCC3

RF Output

Amplifier

5

2 VCC2

3ISIGP

Supply for modulator and biasing circuits.

In phase I chann el positive baseband input port. Best performance is
achieved when the ISIGP and ISIGN are driven differentiall y. The rec­ommended CW differential drive level (V

ISIGP-VISIGN

) is 800mV

P-P

.

VCC2

Modulator and

VGA

VCC2

This input should be DC-biased at 1.2V±0.05V. The common-mode
DC coltage on the ISIGP and ISIGN input signals is used to bias the
modulator. In sleep mode an internal FET switch is opened, the input
goes high impedance and the modulator is de-biased. The input imped­ance is typically 5.5kΩ at low frequencies and at higher frequencies

V

CC2

canbemodeledas50Ω in series with 12pF to ground.

UPCONVERTERS

MODULATORS AND

Phase or amplitude errors between the ISIGP and ISIGN signa ls may
result in the even order distortion of the modulation in the output spec­trum.

50 Ω

12 pF

DC offsets between the ISIGP and IS IGN signals will result in
increased carrier leakage. Small DC o ffsets may be deliberately
applied between the ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel
out LO leakage. The optimum corrective DC offsets will change with
mode, frequency and gain control.
Common-mode noise on the ISIGP and ISGN should be kept low as it
may degrade the noise performance of the modulator.
Phase offsets may be applied between the I and Q channels to improve
the sideband suppression performance.

4ISIGN

In phase I chann el negative b aseband input port. See ISIGP.

V

CC2

5 ENABLE

6 VCC1

5-34

Enables power to the device.
CMOS input.
Logic 1 (1.4V to VCC)=Enabled.
Logic 0 (0V to 0.5V)=Powered Down.

Supply for the LO buffers and quadrature network.
The sideband suppression is a function of the VCC1 voltage. The inclu­sion of R3 (39Ω) lowers the voltage on VCC1 by around 400mV and
results an improvement in sideband suppression but around a 0.2dB
increase in noise at 20MHz offset.

VCC1

LO Quadrature

Generator and

Buffers

GND1

50 Ω

12 pF

V

CC2

Rev A2 010904

Preliminary

RF2483

Pin Function Description Interface Schematic

7LOLB

8GNDLO

9LOHB

10 GND1
11 BAND SEL

Local oscillator input low band.
This input is biased internally at around 1.6V when the chip is in low
band mode and 0V when the chip is in high band mode or powered
down. The LO signal typically needs to be AC coupled.
The noise performance, carrier suppression at low output powers and
sideband suppression are all a function of LO power.
The optimum LO power is between 0dBm and 3dBm.
The device will work with LO powers as low as -20dBm however this is
at the expense of h igher noise performance at high output powers and
poorer sideband suppression.

Ground return for the local osc illator input signa ls.
The GND LO pin is effectively the complementary LO input for both the
high band and low band LO signals. It has significant amounts of LO
signal flowing through it. This pin is brought out as an independent
ground to e nable the PCB board designer to isolate the LO return from
the RF outputs ground and the general chip ground.
It is recommended that this ground is kept isolated from the die flag
ground. Any connections between the GND LO and any other ground
shouldbe made througha ground plane.

Local oscillator input high band.
This input is biased internally at around 1.6V when the chip is in high
band mode and 0V when the chip is in low band mode or powered
down. The LO HB signal typically needs to be AC coupled.
The noise performance, carrier suppression at low output powers and
sideband suppression are all a function of LO power.
The optimum LO power is between 0dBm and 3dBm.
The device will work with LO powers as low as -20dBm however this is
at the expense of h igher noise performance at high output powers and
poorer sideband suppression.

Ground for LO buffers. See pin 6.
Band select input to define active mode.

CMOS input.
Logic 1 (1.4V to VCC)=High band mode.
Logic 2 (0V to 0.5V)=Low band mode.

Seepins7and9.

LOLB

GNDLO

LOHB

GND LO

V

CC2

5

UPCONVERTERS

MODULATORS AND

12 QSIG N

Rev A2 010904

Quadrature channel negative baseband input port. See QSIGP.

V

CC2

50 Ω

12 pF

5-35

5

RF2483

Preliminary

Pin Function Description Interface Schematic

13 QSIG P

14 VREF

UPCONVERTERS

MODULATORS AND

15 GC DEC

16 GC

Quadrature Q channel positive baseband input po rt.
Best performance is achieved when the ISIGP and ISIGN are driven
differentially.The recommended CW differential dr ive level (V

V

QSIGN

) is 800mV

P-P

.

QSIGP

-

This input should be DC-biased at 1.2V±0.05 V. The common-m ode
DC voltage on the QSIGP and QSIGN input signals is used to bias the
modulator. In sleep mode an internal FET switch is opened, the input
goes high impedance and the modulator is de-biased. The input imped­ance is typically 5.5kΩ at low frequencies and at higher frequencies
canbemodeledas50Ω in series with 12pF to ground.
Phase or amplitude errors between the QSIG P and QSIGN signals
which may result in an increase in the even order distortion of the mod­ulation in the ou tput spectrum.
DC offsets between the QSIGP and QSIGN signals will result in an
increased carrier leakage. Small DC o ffsets may be deliberately
applied between the ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel
out the LO leakage. The optimum corrective DC offsets will change with
mode, frequency and gain control.
Common-mode noise on the QSIGP and QSIGN should be kept low as
it may degrade the noise performance of the modulator.
Phase offsets may be applied between the I and Q channels to improve
the sideband suppression performance.

Voltage reference decouple with an external 10nF capacitor to ground.
The voltage on this pin is typically 1.67V when the chip isenabled.The
voltage is 0V when the chip is powered down.
The purpose of this decoupling capacitor is to f ilter out low frequency
noise (20MHz) on the gain control lines.
Poor positioning of the VREF d ecoupling capacitor can cause a degra­dation in LO leakage.
A voltage of around 2.5V on this pin indicates that the die flag under
the chip is not grounded and the chip is not biased correctly.

Voltage reference decouple with an external 1nF decoupling capacitor
to ground.
The voltage on this pin is a function of gain control (GC) voltage when
the chip is enabled. The voltage is 0V when the c hip is powered down.
The purpose of this decoupling capacitor is to f ilter out low frequency
noise (20MHz) on the gain control lines. The size of the capacitor on
the GC DEC line will effect the settling time response to a change in
gain control voltage. A 1nF capacitor equates to around 200ns settling
time and a 0.5nF capacitor equates to a 100ns settling time. There is a
trade-off between settling time and noise contributions by the gain con­trol circuitry as gain control is applied.
Poor positioning of the VREF d ecoupling capacitor can cause a degra­dation in LO leakage.

Gain control voltage. Maximum output power at 2.0V. Minimum output
power at 0V.When the chip is enabled the input impedance is 10kΩ
referenced to 1.7V

. When the chip is powered down a FET switch is

DC

opened and the in put goes high impedance.

4kΩ

­+

4kΩ

+

-

V

V

CC2

50 Ω

12 pF

V

CC2

V

CC2

CC2

10 kΩ

1.7 V

4kΩ

-

+

17 RF OUT LB

18 GND2

5-36

RF low band output. Open collector output.
The output should be biased at VCC through an inductor that c an be
used to form part of an output matching circuit.
In our proposed applications circuit some power is dissipated in R6
(130Ω) which appears as a de-Qing resistor in parallel with the output
inductor L4. If R6 is eliminated and the RFOUT LB pin is re-matched to
50Ω it is possible to get approximately 5dB extra power out of the
device in low band mode.

Ground for RF output sections.

Rev A2 010904

Preliminary

RF2483

Pin Function Description Interface Schematic

19 RF OUT H B

20 GND3

Die

GND4

RF high band output. Open collector output.
The output should be biased at VCC through an inductor that can be
used to form part of an output matching circuit.
In our proposed applications circuit some power is dissipated in R4
(180Ω) which appears as a de-Qing resistor in parallel with the output
inductor L3. If R4 is eliminated and the RFOUT HB pin isre-matchedto
50Ω it is possible to get approximately 3dB extra power out of the
device in high band mode.

Ground for RF output sections.
Ground for modulator, variable gain amplifier and substrate.

Flag

5

UPCONVERTERS

MODULATORS AND

Rev A2 010904

5-37

RF2483

Preliminary

Applicat ion Notes

5

The baseband inputs must be driven with balanced dif­ferential signals. We suggest amplitude and phase
matching <0.5dB and <0.5°. Phase or gain imbalances
between the complementary input signals will cause
additional distortion including some second order
baseband distortion.

The common-mode voltage on the baseband inputs
should be well controlled at 1.2V. We suggest that the
common-mode DC voltage be 1.2V+

0.05 V. The com­mon-mode DC voltage is used to b ias the modulator;
hence, deviations from 1.2 V will result in changes in
the current consumption, noise and intermodulation
performance.

Thechipisdesignedtobedrivenwithasingle-ended
LO signal.

The GC DEC and VREF output pins should be decou­pled to ground. We recommend a 10nF capacitor on
VREF, and a 1 nF capacitor on GC DEC. The purpose

UPCONVERTERS

MODULATORS AND

of this capacitor is to filter out low frequency noise
(20MHz) in the gain control lines, which may cause
noise on the RF signal. The capacitor on the GC DEC
line will effect the settling time response to a change in
power control voltage. A 1nF capacitor equates to
around a 200ns settling time, and a 0.5nF capacitor
equates to a 100ns settling time. There is a trade-off
between settling time and phase noise as you start to
apply gain control.

The ground lines for the LO sections, GNDLO and
GND1, are brought out of the chip independently from
the ground to the RF and modulator sections. This iso­lates the LO signals from the RF output sections.

The G ND LO pin is effectively the complementary LO
input for both the high band and low band LO signals.It
has significant amounts of LO signal flowing through it.
This is brought out as an independent ground to try to
enablethe PCB board designer to isolate the LO return
from the RF output sections and general chip ground.

The RF output ports of the RF2483 consist of open col­lector architecture and require pull up inductors to the
supply voltage. This, in conjunction with a DC blocking
capacitor provides a simple, broadband L-match net­work as shown in the schematic diagram. A shunt
resistor is included to control the Q of the matching
network and set the modulator output power. In this
case, both outputs were designed to provide 0dBm.

An alternate output match containing a third harmonic
trap was evaluated. This circuit uses a tapped-C
matching network, whereby the shunt C provides a low
impedance path near the third harmonic frequency.
Although an additional component is required, the ben­efit of suppressing the third harmonic distortion may
improve overall system intermodulation. This network
has been shown to provide better than 20dB of
improved suppression in high-band mode.

VCC

C4

100 pF

L3

2.2 nHR4180 Ω

L4

10 nHR6130 Ω

VCC

C11
2pF

C15
6pF

C6

100 pF

C12
1pF

C13
2pF

J4

RFOUT HB

J8

RFOUT LB

Figure 1. Alternate RF output match with

third-harmonic suppression.

High Band L OHB (S11) and RFHB (S22) Parameters

(VCC=2.7V, VGC=2.0V,Band Sel=2.7V, EN=2.7V,T=+25°C)

Freq. (MHz) S11 MAG S11 ANG S22 MAG S22 ANG

1700 0.478 -110.8 0.903 -55.0
1750 0.469 -112.4 0.901 -56.2
1800 0.465 -115.1 0.902 -57.2
1850 0.472 -117.2 0.902 -58.0
1900 0.476 -117.6 0.904 -59.0
1950 0.465 -118.4 0.905 -59.6
2000 0.457 -120.8 0.906 -60.3
2050 0.452 -122.6 0.909 -60.9
2100 0.464 -123.0 0.916 -61.9
2150 0.453 -123.4 0.914 -64.0
2200 0.442 -125.4 0.879 -64.5

Low Band LOLB (S11) and RFLB (S22) Parameters

(VCC=2.7V, VGC=2.0V,Band Sel=0V, EN=2.7V, T=+25°C)

Freq. (MHz) S11 MAG S11 ANG S22 MAG S22 ANG

700 0.468 -63.2 0.92 -9.9
750 0.452 -67.6 0.915 -11.3
800 0.437 -72.1 0.913 -12.6
850 0.425 -76.6 0.908 -14.0
900 0.414 -81.2 0.905 -15.6
950 0.407 -85.6 0.901 -17.1

1000 0.402 -89.8 0.898 -18.8

5-38

Rev A2 010904

Preliminary

VCC

VCC

J1
I+

J2

I-

EN

C8

1nF

Evaluation Board Schemati c

(Download Bill of M aterials from www.rfmd.com.)

C12*

DNI

C4

100 pF

R4

180 Ω

L3

3.3 nH

C7

1nF

C11

1pF

* *

1

2

3

4

5

6 7 8 9 10

* *

R3

39 Ω

L1

6.8 nH

C15
3pF

J4

RF OUT HB

J8

C13*

DNI

R6

130 Ω

L4

10 nH

1617181920

C5

10 pF

C6

100 pF

R5

100 Ω

C10
1nF

Represents "GND".

*

C9

1nF

15

14

13

12

11

Note: Parts with * following the reference designator

should not be populated on the evaluation board.

C14

10 nF

2483400-

RF OUT LB

VCC

GC

J7
Q-

J6

Q+
BAND SEL

RF2483

P1

P1-1

P1-3 EN

P1-1

P1-3 BAND SEL

1
2
3

CON3

P2

1
2
3

CON3

GND

R2

1M

GND

R1

1M

VCC

+

C2

1uF

GC

+

C1

1uF

5

UPCONVERTERS

MODULATORS AND

Rev A2 010904

VCC

C3

100 pF

J3

LO LB

L2

3.3 nH
J5

LO HB

5-39

5

RF2483

Preliminary

Evaluation Board Layout

Board Size 2.0” x 2.0”

Board Thickness 0.062”, Board Material FR-4, Multi-Layer

Assembly

UPCONVERTERS

MODULATORS AND

Top Inner 1

5-40

Rev A2 010904

Preliminary

RF2483

Inner 2 Back

5

UPCONVERTERS

MODULATORS AND

Rev A2 010904

5-41

RF2483

H

Preliminary

5

High Band ModulatorPerformanceversus Frequency

LO=0dBm, VCC=2.7V,GC=2V,IQ=100kHz 800mV

0.0

CarrierSuppression
Sideband Suppression
3rd Harmonic ofModulation
Output Power

1700.0 1800.0 1900.0 2000.0 2100.0 2200.0

Output Power (dBm)

-10.0

-20.0

-30.0

-40.0

Carrier Suppression (dBc)

-50.0

-60.0

Frequency(MHz)

P-P

0.0

-10.0

-20.0

-30.0

3rd Harmonic (dBc)

-40.0

Sideband Suppression (dBc)

-50.0

-60.0

High Band Output Noise 20MHz Offset versus LO Power

-152.0

UPCONVERTERS

MODULATORS AND

-153.0

-154.0

-155.0

-156.0

Output Noise (dBm/Hz)

-157.0

-158.0

-10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0

VCC=2.7V,LO=1900MHz, GC=2V

Output Noise 20MHz
Offset, I&Q =
800mVpp 1.2Vdc

Output Noise 20MHz
Offset, I&Q = 0 mVpp

1.2Vdc
Output Power

I&Q= 800mVpp

LO Power (dBm)

1.0

0.0

-1.0

-2.0

-3.0

Output Power (dBm)

-4.0

-5.0

High Band ModulatorPerformanceversus LO Power

LO=1900MHz,VCC=2.7V,GC=2V,IQ=100kHz 800mV

0.0

-10.0

-20.0

-30.0

Output Power (dBm)

-40.0

Carrier Suppression (dBc)

-50.0

-60.0

-10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0

CarrierSuppression
Sideband Suppression
3rd Harmonic of

Modulation
Output Power

LO Power (dBm)

igh BandOutput Power versus Baseband Signal Level -

VCC=2.7V,LO=1900MHz 0dBm, IQ=100kHz 1.2Vdc

20.0

10.0

0.0

-10.0

-20.0

-30.0

-40.0

Output Power (dBm)

-50.0

-60.0

-70.0

-80.0

10.0 100.0 1000.0 10000.0

Baseband Signal Level (mVpp)

GC = 2.0V
GC = 1.5V
GC = 1.0V
GC = 0.5V

P-P

0.0

-10.0

-20.0

-30.0

3rd Harmonic (dBc)

-40.0

Sideband Suppression (dBc)

-50.0

-60.0

5-42

High Band Output Noise 20MHz Offset versus Gain

-130.0

-135.0

-140.0

-145.0

-150.0

-155.0

Control -

Output Noise (dBm/Hz)

-160.0

-165.0

-170.0

0.0 0.5 1.0 1.5 2.0 2.5

VCC=2.7V,LO=1900MHz, GC=2V

Output Noise20MHz
Offset, I&Q=
800mVpp 1.2Vdc
Output Noise20MHz
Offset, I&Q= 0mVpp

1.2Vdc
Output Power
I&Q=800mVpp1.2Vdc

GainControl(V)

5.0

0.0

-5.0

-10.0

-15.0

-20.0

-25.0

-30.0

-35.0

Output Power (dBm)

30.00

20.00

10.00

OIP3 (dBm)

-10.00

-20.00

-30.00

High Band Output IP3 versus Gain Control

VCC=2.7V,LO=0dBm, IQ=900kHz and 1100kHz at 1.2V

0.00

1700MHz
1800MHz
1900MHz
2000MHz

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control(V)

Rev A2 010904

DC

Preliminary

H

RF2483

High Band Output Power versus Gain Control

LO=1900MHz0dBm, IQ=100kHz 800mV

5.00

0.00

-5.00

-10.00

-15.00

-20.00

-25.00

Output Power (dBm)

-30.00

-35.00

-40.00

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

P-P

High Band Output Powerversus Gain Control

-5.0

-10.0

VCC=2.7V,LO=0dBm, IQ=100kHz 800mV

5.0

0.0

P-P

1.2V

DC

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

1.2V

High Band Output Power versus Gain Control

LO=1900MHz0dBm, IQ=100kHz 800mV

5.0

0.0

-5.0

-10.0

-15.0

-20.0

-25.0

Output Power (dBm)

-30.0

-35.0

-40.0

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control (V)

1.2V

P-P

DC

Temp = -40°C,
Vcc=2.7V
Temp = +25°C,
Vcc=2.7V
Temp = +85°C,
Vcc=2.7V

5

High Band Carrier Suppression versus Gain Control

DC

-10.0

-20.0

VCC=2.7V,LO=0dBm, IQ=100kHz 800mV

0.0

P-P

1.2V

1700MHz
1800MHz
1900MHz
2000MHz

DC

UPCONVERTERS

MODULATORS AND

-15.0

-20.0

-25.0

Output Power (dBm)

-30.0

-35.0

-40.0

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control (V)

High Band Sideband Suppression versus Gain Control -

-10.0

-20.0

-30.0

-40.0

Sideband Suppression (dBc)

-50.0

0.0

VCC=2.7V, LO=0dBm, IQ=100kHz 800mV

1.2V

P-P

1700MHz
1800MHz
1900MHz
2000MHz

DC

1700MHz
1800MHz
1900MHz
2000MHz

-30.0

-40.0

Carrier Suppression (dBc)

-50.0

-60.0

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

igh Band Modulation's 3rd Harmonic versus Gain

0.0

-10.0

-20.0

-30.0

-40.0

-50.0

3rd Harmonic of Modulation Suppression

Control -

VCC=2.7V, LO=0dBm, IQ=100kHz 800mV

P-P

1.2V

1700MHz
1800MHz
1900MHz
2000MHz

DC

-60.0

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control (V)

Rev A2 010904

-60.0

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control (V)

5-43

RF2483

H

Preliminary

5

High Band Carrier Suppression versus Gain Control

LO=1900MHz0dBm, IQ=100kHz 800mV

0.0

-10.0

-20.0

-30.0

-40.0

Temp= -40°C,
Vcc=2.7V
Temp= +25°C,
Vcc=2.7V

Temp= +85°C,
Vcc=2.7V

Carrier Suppression (dBc)

-50.0

-60.0

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control (V)

1.2V

P-P

DC

High Band Sideband Suppression versus Gain Control -

0.00

UPCONVERTERS

MODULATORS AND

-10.00

-20.00

VCC=2.7V, LO=0dBm, IQ=100kHz 800mV

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

1.2V

P-P

DC

igh Band Sideband Suppression versus Gain Control -

0.0

-10.0

-20.0

-30.0

-40.0

LO=1900MHz 0dBm, IQ=100kHz 800mV

Temp = -40°C,
Vcc=2.7V
Temp = +25°C,
Vcc=2.7V
Temp = +85°C,
Vcc=2.7V

Sideband Suppression (dBc)

-50.0

-60.0

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control (V)

1.2V

P-P

High Band Carrier Suppression versus Gain Control

0.00

-10.00

-20.00

VCC=2.7V,LO=0dBm, IQ=100kHz 800mV

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

P-P

DC

1.2V

DC

-30.00

-40.00

Sideband Suppression (dBc)

-50.00

-60.00

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control(V)

High Band Modulation's 3rd Harmonic versus Gain

Control -

0.00

-10.00

-20.00

-30.00

(dBc)

-40.00

-50.00

3rd Harmonic of Modulation Suppression

-60.00

0.0 0.5 1.0 1.5 2.0 2.5

LO=1900MHz 0dBm, IQ=100kHz 800mV

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

GainControl(V)

-30.00

-40.00

Carrier Suppression (dBc)

-50.00

-60.00

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control(V)

High Band Output IP3 versus Gain Control

1.2V

p-p

DC

LO=1900MHz0dBm, IQ=900kHzand 1100kHz at 1.2V

25.0

20.0

15.0

10.0

5.0

0.0

-5.0

-10.0

Output IP3 (dBm)

-15.0

-20.0

-25.0

-30.0

0.0 0.5 1.0 1.5 2.0 2.5

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

Gain Control (V)

DC

5-44

Rev A2 010904

Preliminary

RF2483

Low Band Modulator Performance versus Frequency

LO=0dBm, VCC=2.7V,GC=2V,IQ=100kHz 800mV

0.00

-10.00

-20.00

-30.00

-40.00

Carrier Suppression
Sideband Suppression
3rdHarmonicof

Modulation
OutputPower

Output Power (dBm)

Carrier Suppression (dBc)

-50.00

-60.00

-70.00

700.0 800.0 900.0 1000.0 1100.0 1200.0

Frequency(MHz)

Low Band Output Noise 20MHz Offset versus LO Power

-152.00

-153.00

-154.00

-155.00

-156.00

Output Noise (dBm/Hz)

-157.00

-158.00

-10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0

VCC=2.7V,LO=900MHz,GC=2V

Output Noise20MHz
Offset, I&Q=
800mVpp 1.2Vdc
Output Noise20MHz
Offset, I&Q= 0
mVpp 1.2Vdc
Output Power
I&Q=800mVpp1.2Vdc

LO Power (dBm)

Low Band ModulatorPerformance versus LO Power

P-P

0.00

-10.00

-20.00

-30.00

-40.00

3rd Harmonic (dBc)

-50.00

-60.00

-70.00

Output Power (dBm)

Sideband Suppression (dBc)

LO=900MHz,VCC=2.7V,GC=2V,IQ=100kHz 800mV

0.00

-10.00

-20.00

-30.00

-40.00

Carrier Suppression (dBc)

-50.00

-60.00

-70.00

-10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0 8.0

CarrierSuppression
Sideband Suppression
3rd Harmonic of

Modulation
Output Power

LO Power (dBm)

P-P

0.00

-10.00

-20.00

-30.00

-40.00

3rd Harmonic (dBc)

-50.00

Sideband Suppression (dBc)

-60.00

-70.00

5

Low Band Output Power versus Baseband Signal Level

1.0

0.0

-1.0

-2.0

-3.0

Output Power (dBm)

-4.0

-5.0

-10.0

-20.0

-30.0

-40.0

Output Power (dBm)

-50.0

-60.0

-70.0

-80.0

20.0

10.0

0.0

VCC=2.7V,LO=900MHz, IQ=100kHz 1.2Vdc

GC = 2.0V
GC = 1.5V
GC = 1.0V
GC = 0.5V

10.0 100.0 1000.0 10000.0

Baseband Signal Level (mVpp)

UPCONVERTERS

MODULATORS AND

Low Band Output Noise at 20MHz Offset versus GC

-130.0

-135.0

-140.0

-145.0

-150.0

-155.0

Output Noise (dBm/Hz)

-160.0

-165.0

-170.0

0.0 0.5 1.0 1.5 2.0 2.5

Rev A2 010904

VCC=2.7V,LO=900MHz0dBm

OutputNoise 20MHz
Offset, I&Q=
800mVpp1 .2Vdc

OutputNoise 20MHz
Offset, I&Q= 0 mVpp

1.2Vdc
OutputPower

I&Q=800mVpp 1.2Vdc

GainControl(V)

5.0

0.0

-5.0

-10.0

-15.0

-20.0

-25.0

-30.0

-35.0

Output Power (dBm)

Low Band Output IP3 versus Gain Control

VCC=2.7V,LO=0dBm, IQ=900kHz and 1100kHzat1.2V

30.00
700MHz

20.00

10.00

0.00

-10.00

OIP3 (dBm)

-20.00

-30.00

-40.00

0.0 0.5 1.0 1.5 2.0 2.5

800MHz
900MHz
1000MHz

GainControl(V)

DC

5-45

RF2483

L

Preliminary

5

Low Band Output Powerversus Gain Control

LO=900MHz0dBm, IQ=100kHz 800mV

5.00

0.00

-5.00

-10.00

-15.00

-20.00

-25.00

Output Power (dBm)

-30.00

-35.00

-40.00

-45.00

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

1.2V

P-P

DC

Output Power (dBm)

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

Low Band Output Powerversus Gain Control

VCC=2.7V,LO=0dBm, IQ=100kHz 800mV

5.0

0.0

UPCONVERTERS

MODULATORS AND

-5.0

-10.0

-15.0

-20.0

-25.0

Output Power (dBm)

-30.0

-35.0

-40.0

-45.0

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control (V)

P-P

1.2V

DC

700MHz
800MHz
900MHz
1000MHz

Carrier Suppression (dBc)

Low Band Output Powerversus Gain Control

LO=900MHz0dBm, IQ=100kHz 800mV

5.00

0.00

-5.00

-10.00

-15.00

-20.00

-25.00

-30.00

-35.00

-40.00

-45.00

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

1.2V

P-P

Temp = -40°C,
Vcc=2.7V
Temp= +25°C,
Vcc=2.7V
Temp= +85°C,
Vcc=2.7V

DC

Low Band CarrierSuppression versus Gain Control

VCC=2.7V,LO=0dBm, IQ=100kHz 800mV

0.0

-10.0

-20.0

-30.0

-40.0

-50.0

-60.0

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control (V)

P-P

1.2V

700MHz
800MHz
900MHz
1000MHz

DC

5-46

Low Band Sideband Suppression versus Gain Control

VCC=2.7V,LO=0dBm, IQ=100kHz 800mV

0.0

-10.0

-20.0

-30.0

-40.0

Sideband Suppression (dBc)

-50.0

-60.0

0.0 0.5 1.0 1.5 2.0 2.5

Gain Control (V)

P-P

1.2V

DC

700MHz
800MHz
900MHz
1000MHz

3rd Harmonic of Modulation Suppression

ow Band Modulation's 3rd Harmonic versus Gain

Control -

0.0

-10.0

-20.0

-30.0

-40.0

(dBc)

-50.0

-60.0

-70.0

-80.0

0.0 0.5 1.0 1.5 2.0 2.5

VCC=2.7V, LO=0dBm, IQ=100kHz 800mV

GainControl(V)

P-P

700MHz
800MHz
900MHz
1000MHz

Rev A2 010904

1.2V

DC

Preliminary

RF2483

Low Band CarrierSuppression versus Gain Control

LO=900MHz0dBm, IQ=100kHz 800mV

0.00

-10.00

-20.00

-30.00

-40.00

Carrier Suppression (dBc)

-50.00

-60.00

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

P-P

Temp= -40°C,
Vcc=2.7V
Temp= +25°C,
Vcc=2.7V
Temp= +85°C,
Vcc=2.7V

Low Band CarrierSuppression versus Gain Control

-10.00

-20.00

-30.00

-40.00

Carrier Suppression (dBc)

-50.00

VCC=2.7V,LO=0dBm, IQ=100kHz 800mV

0.00

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

P-P

1.2V

1.2V

Low Band Sideband Supperssion versus Gain Control

DC

-10.00

-20.00

-30.00

-40.00

-50.00

Sideband Suppression (dBc)

-60.00

-70.00

LO=900MHz0dBm, IQ=100kHz800mV

0.00

Temp = -40°C,
Vcc=2.7V
Temp = +25°C,
Vcc=2.7V
Temp = +85°C,
Vcc=2.7V

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

1.2V

P-P

DC

5

Low Band Sideband Suppression versus Gain Control

DC

-10.00

-20.00

-30.00

-40.00

-50.00

Sideband Suppression (dBc)

-60.00

VCC=2.7V,LO=0dBm, IQ=100kHz 800mV

0.00
Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

1.2V

P-P

DC

UPCONVERTERS

MODULATORS AND

-60.00

0.0 0.5 1.0 1.5 2.0 2.5

Low Band Modulation's 3rd Harmonic versus Gain

Control -

0.00

-10.00

-20.00

-30.00

(dBc)

-40.00

-50.00

-60.00

3rd Harmonic of Modulation Suppression

-70.00

0.0 0.5 1.0 1.5 2.0 2.5

Rev A2 010904

GainControl(V)

LO=900MHz 0dBm, IQ=100kHz 800mV

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

GainControl(V)

-70.00

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

Low Band Output IP3 versus Gain Control

1.2V

P-P

DC

VCC=2.7V,LO=0dBm, IQ=900kHz and 1100kHzat1.2V

30.00
700MHz

20.00

10.00

0.00

-10.00

OIP3 (dBm)

-20.00

-30.00

-40.00

0.0 0.5 1.0 1.5 2.0 2.5

800MHz
900MHz
1000MHz

GainControl(V)

DC

5-47

RF2483

Preliminary

5

High Band CurrentConsumption versus Gain Control

160.0

140.0

120.0

100.0

Current (mA)

LO=1900MHz0dBm, IQ=100kHz 800mV

80.0

60.0

40.0

20.0

0.0

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

1.2V

P-P

DC

Temp = -40°C,
Vcc=2.7V

Temp = +25°C,
Vcc=2.7V

Temp = +85°C,
Vcc=2.7V

High Band CurrentConsumption versus Gain Control

160.0

140.0

UPCONVERTERS

MODULATORS AND

120.0

100.0

LO=1900MHz0dBm, IQ=100kHz 800mV

1.2V

P-P

DC

Low Band Current Consumption versus Gain Control

LO=900MHz0dBm, IQ=100kHz800mV

0.00

0.00.51.01.52.02.5

Current (mA)

160.00

140.00

120.00

100.00

80.00

60.00

40.00

20.00

GainControl(V)

1.2V

P-P

Temp = -40°C,
Vcc=2.7V

Temp = +25°C,
Vcc=2.7V

Temp = +85°C,
Vcc=2.7V

DC

Low Band Current Consumption versus Gain Control

160.0

140.0

120.0

100.0

LO=900MHz0dBm, IQ=100kHz800mV

1.2V

P-P

DC

80.0

Current (mA)

60.0

40.0

20.0

0.0

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

High Band

ReturnLoss versus Frequency

LO HB Port
RFOUT HB Port

Return Loss (dB)

0.0

-5.0

-10.0

-15.0

-20.0

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

80.0

Current (mA)

60.0

40.0

20.0

0.0

0.0 0.5 1.0 1.5 2.0 2.5

GainControl(V)

Low Band

ReturnLoss versus Frequency

Return Loss (dB)

0.0

-5.0

-10.0

-15.0

-20.0

Vcc=2.7V
Vcc=3.0V
Vcc=3.3V

LOLB Port
RFOUT LB Port

-25.0

1700.0 1750.0 1800.0 1850.0 1900.0 1950.0 2000.0

Frequency (MHz)

5-48

-25.0

700.0 750.0 800.0 850.0 900.0 950.0 1000.0

Frequency (MHz)

Rev A2 010904