Datasheet RF2480, RF2480PCBA Datasheet (RF Micro Devices)

RF2480

5

Typical Applications

• Dual-Band CDMA Base Stations

• TDMA/TDMA-EDGE Base Stations

• GSM-EDGE/EGSM Base Stations

Product Description

The RF2480 i s a monolithic integrated quadrature modu­lator IC capable of universal direct modulation for high­frequency AM, PM, or compound carriers. This low-cost
IC features excellent linearity, noise floor, and over-tem­perature carrier suppression performance. The device
implements differential amplifiers for the modulation
inputs, 90° carrier phase shift network, carrier limiting
amplifiers, two matched double-balanced mixers, sum­ming amplifier,and an output RF amplifier which will drive
50 Ω from 800MHz to 2500MHz. Component matching is
used to obtain excellent amplitude balance and phase
accuracy.

DIRECT QUADRATURE MODULATOR

• W-CDMA Base Stations

• WLAN and WLL Systems

• TETRA Systems

0.157

0.150

0.393

0.386

8° MAX

0° MIN

0.244

0.229

0.034

0.016

0.009

0.007

0.018

0.014

0.050

NOTES:

1. Shaded lead is Pin 1.

2. All dimensionsare excluding

3. Lead coplanarity- 0.005 with

0.068

0.053

mold flash.
respectto datum "A".

-A-

0.008

0.004

5

UPCONVERTERS

MODULATORS AND

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

IREF

QREF

GND2

GND2

GND2

LO

VCC1

PD

ü

SiGe HBT

1

2

3

4

5

6

7

8

Σ

-45°
+45°

POWER

CONTROL

Si CMOS

16

15

14

13

12

11

10

9

ISIG

QSIG

GND1

GND1

GND1

VCC2

GND1

RF OUT

Functional Block Diagram

Package Style: SOIC-16

Features

• Typical Carrier Suppression>35dBc over
temperature with highly linear operation

• Single 5V Power Supply

• Integrated RF quadrature network

• Digitally controlled Power Down mode

• 800MHz to 2500MHz operation

Ordering Information

RF2480 Direct QuadratureModulator
RF2480 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A3 011019

5-29

RF2480

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +7.5 V
Input LO and RF Levels +10 dBm

Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believes the furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

5

Parameter

Min. Typ. Max.

Carrier Input

Frequency Range 800 2500 MHz
Power Level -6 +6 dBm
Input VSWR 4.5:1 At 900MHz unmatched

Specification

2:1 At 1800MHz unmatched
2:1 At 2500MHz unmatched

Unit Condition

T=25°C, VCC=5V

Modulation Input

Frequency Range DC 250 MHz
Reference Voltage (V

Maximum Modulation (I&Q) V
Gain Asymmetry 0.2 dB

Quadrature Phase Error 3 °

UPCONVERTERS

MODULATORS AND

Input Resistance 30 kΩ
Input Bias Current 40 µA

RF Output (~800MHz)

Maximum Outp ut Power -3 0 +2 dBm TETRA I&Q Amplitude=2V

High-Linearity Output Power -6 -5 dBm TETRA I&Q Amplitude=1.1V

Adjacent Channel

Power Rejection

Output P1dB +2 +3 dBm Over operating temperature.
IM3 Suppression -39 -40 dBc 2kHz offset (9kHz, 11kHz) at -6dBm/ton e.

IM5 Suppression -49 -59 dBc 2kHz offset (9kHz, 11kHz) at -6dBm/ton e.
IM7 Suppression -49 -71 dBc 2kHz offset (9kHz, 11kHz) at -6dBm/ton e.
Carrier Suppression -25 -30 dBc Unadjusted performance.

Sideband Suppression -25 -30 dBc Unadjusted performance.
Broadband Noise Floor -150 -145 dBm/Hz 26MHz offset with TETRA signal applied

)3.0V

REF

±1.0 V

REF

LO=800MHz, -5dBm; SSB

Over operating temperature.

ACPR of -47dBc. Overoperating tempera­ture.

-47 -52 dBc TETRA modulation applied with
=-5dBm. Over operating temperature.

P

OUT

Over operating temperature.

Over operating temperature.
Over operating temperature.

=-5dBm.

P

OUT

PP

PP

with an

5-30

Rev A3 011019

RF2480

Parameter

Min. Typ. Max.

RF Output (~900MHz)

Maximum Output Power 0 +4 dBm I&Q Amplitude=2V
High-Linearity Output Power -11 dBm I&Q Ampl itude=0.325V
Carrier Suppression 50 dB T=25°C; P

Sideband Suppression 50 dB T=25°C ; P

Output Impedan ce 13-j:25 Ω
Broadband Noise Floor -153.0 dBm/Hz At 20MHz offset, V

RF Output (~2000 MHz)

Maximum Output Power -7 -3 dBm I&Q Amplitude=2V
High-Linearity Output Power -17 dBm I&Q Ampl itude=0.325V
Carrier Suppression 50 dB T=25°C; P

Sideband Suppression 50 dB T=25°C ; P

Output Impedan ce 58-j11 Ω
Broadband Noise Floor -158.0 dBm/Hz At 20MHz offset, V

Specification

35 dB Over Temperature (Temperature cycled from

35 dB Over Temperature (Temperature cycled from

35 dB Temperature cycled from -40°C to +85°C

40 dB Temperature cycled from -40°C to +85°C

Unit Condition

LO=880MHz, -5dBm; SSB

PP

=-11dBm (meets CDMA base

station requiremen ts); optimized I,Q DC off­sets

-40°C to +85°C after optimization at
T=25°C;P

offsets

-40°C to +85°C after optimization at
T=25°C;P

ISIG, QSIG, IREF, and Q R EF.
LO=2000MHz, -5dBm; SSB

offsets
after optimization at T=25°C; P

offsets
after optimization at T=25°C; P

ISIG, QSIG, IREF, and Q R EF.

OUT

=-11dBm)

OUT

=-11dBm; optimized I,Q DC

OUT

=-11dBm)

OUT

CC

PP

=-17dBm; optimized I,Q DC

OUT

=-17dBm; optimized I,Q DC

OUT

CC

Power Down

Turn On/Off Time 100 ns
PD Input Resistance 50 kΩ
Power Control “ON” 2.8 V Threshold voltage
Power Control “OFF” 1.0 1.2 V Threshold voltage

Power Supply

Voltage 5 V Specifications

4.5 6.0 V Operating Limits

Current 50 mA Operating

25 µA Power Down

PP

=5V; Tied toV

PP

OUT

OUT

=5V; Tied toV

:

REF

=-17 dBm

=-17 dBm

:

REF

5

UPCONVERTERS

MODULATORS AND

Rev A3 011019

5-31

5

RF2480

Pin Function Description Interface Schematic

1IREF

2QREF

Reference voltage for the I mixer.This voltage should be the same as
the DC voltage supplied to the I SI G pin. A voltage of 3.0V is recom­mended. The SIG and REF inputs are inputs of a differential amplifier.
Therefore the REF and SIG inputs are interchangeable.If swapping the
I SIG and I REF pins, the Q SIG and Q REF also need to be swapped
to maintain the correct phase. It is also possible to drive the SIG and
REF inputs in a balanced mode. This will increase the gain.

For optimum c a rrier suppression, the DC voltages on I REF, Q REF, I
SIG and Q SIG should be adjusted slightly to compensate for inherent
undesired internal DC offsets; for optimum sideband suppression,
phase and signal amplitude on IREF, Q REF, I SIG and Q SIG should
be adjusted slightly to compensate for inherent undesired internal off­sets. See RFMD AN0001 for more detail.

Reference voltage for the Q mixer. This voltage should be the same as
the DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recom­mended. See pin 1 fo r more details.

I REFI SIG

100 Ω100 Ω

425 Ω 425 Ω

Q REFQ SIG

100 Ω100 Ω

425 Ω 425 Ω

3 GND2

UPCONVERTERS

MODULATORS AND

4 GND2
5 GND2
6LO

7 VCC1

8PD

9RFOUT

10 GND3
11 VCC2
12 GND1
13 GND1

14 GND1

Ground connection of the LO phase shift network. T his pin should be
connected directly to the ground plane.

Same as pin 3.
Same as pin 3.
The input of the phase shifting network. This pin has an internal DC

blocking capacitor. This port is voltage driven so matching at different
frequencies is not required.

Power supply for all circuits except the RF output stage. An external
capacitor is needed if no other low frequency bypass capacitor is
nearby.

Power Down control. When this pin is "low", all circuits are shut off. A
"low" is typically 1.2V or less at room temperature.When this pin is
"high"(V

put power and performance will be degraded. Operating in this region
is not recommended, although it might be useful in some applications
where power control is required.

RF Output. This pin has an internal DC blocking capacitor. At some fre­quencies, external matching may be needed to optimize output power.

Ground connection for the RF output stage. This pin should be con­nected direc tly to the ground plane.

Power supply for the RF output amplifier. An external capacitor is
needed if no other low frequency bypass capacitor is near by.

Ground connection for the LO and base band amplifiers, and for the
mixers. This pin should be connected directly to the ground plane.

Same as pin 12.
Same as pin 12.

), all circuits are operating normally. If PD is below VCC, out-

CC

LO

V

CC

200 Ω

PD

RF OUT

5-32

Rev A3 011019

RF2480

Pin Function Description Interface Schematic

15 Q SIG

Baseband input to the Q mixer.This pin is DC-coupled. Maximum out­put power is obtained when the input signal has a peak to peak ampli­tude of 2V; for highly linear operation, the input signal (and output
power) must be reduced appropriately. The recommended DC level for
this pin is 3.0V. The peak minimum voltage on this pin (V

REF

- peak

modulation amplitude) should never drop below 2.0V. The peak maxi­mum voltage on this pin (V

+ peak modulation amplitude) should

REF

never exceed 4.0V. See pin 1 for more details.

Q REFQ SIG

100 Ω100 Ω

425 Ω 425 Ω

16 I SIG

Baseband input to the I mixer. This pin is DC-coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude
of 2V; for highly linear operation, the input signal (and output power)
must be reduced appropriately. The recommended DC level for this pin
is 3.0V. The peak minimum voltage on this pin (V

- peak modulation

REF

amplitude) should never drop below 2.0V. The peak maximum voltage
on this pin (V

+ peak modulation amplitude) should never exceed

REF

4.0V. See pin 1 for more details.

Application Schemati c

DC-Coupled

I

REF

100 nF

Q

REF

100 nF

1

2

3

4

Σ

16

15

14

13

ISIG

QSIG

425 Ω 425 Ω

I REFI SIG

100 Ω100 Ω

5

UPCONVERTERS

MODULATORS AND

Rev A3 011019

LO IN

PD

5

V

CC

100 nF

100 nF

6

7

8

-45°

+45°

POWER

CONTROL

12

11

10

9

V

CC

100 nF

RF OUT

5-33

RF2480

Evaluation Board Schema t ic

(Download Bill of Materials from www.rfmd.com.)

5

P1

P1-1 VCC

P2-1

LO IN

J1

UPCONVERTERS

MODULATORS AND

P1-1

C1

100 nF

50 Ωµstrip

C2

100 nF

1
2

GND
NC

3

1

2

3

4

5

6

7

8

Σ

-45°

+45°

POWER

CONTROL

P2

P2-1 REF

1
2

GND
NC

3

16

15

14

13

12

11

10

9

2480400-

50 Ωµstrip

50 Ωµstrip

C3

100 nF

50 Ωµstrip

I SIG

J4

Q SIG

J3

P1-1

RF OUT

J2

5-34

Rev A3 011019

Evaluation Board Layout

Board Size 1.510” x 1.510”

Board Thickness 0.031”, FR-4

RF2480

5

UPCONVERTERS

MODULATORS AND

Rev A3 011019

5-35

5

RF2480

UPCONVERTERS

MODULATORS AND

5-36

Rev A3 011019