Datasheet RF2444, RF2444PCBA-H Datasheet (RF Micro Devices)

8-53

8

FRONT-ENDS

Product Description

Ordering Information

Typical Applications

Features

Functional Block Diagram

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

Si CMOS

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

GAIN SEL

LNA IN

PD

VCC1

VCC2

MIX OUT-

MIX OUT+

LO IN

VCC4

LNA OUT

NC

NC

MIXIN

GND3

VCC3

RX EN

LNA

MIXER

RF AMP

Bias

Circuits

BACKSIDE GND

RF2444

HIGH FREQUENCY LNA/MIXER

• WLAN or Wireless Local Loop

• Digital Communication Systems

• Spread-Spectrum Communication Systems

• Part of 2.4GHz Chipset

• Portable Battery-Powered Equipment

• UHF Digital and Analog Receivers

The RF2444 is a monolithic integrated UHF receiver front
end suitable for 2.4GHz ISM band applications. The IC
contains all of the required components to implement the
RF functions of the receiver except for the passive filter­ing and LO generation. It contains an LNA (low-noise
amplifier), a second RF amplifier and a doubly balanced
mixer. The output of the LNA is made available as an out­put to permit the insertion of a bandpass filter between
the LNA and the RF/Mixer section. The mixer outputs can
beselectivelydisabledtoallowfortheIFfiltertobeused
in the transmit mode.

• Single 2.7V to 3.6V Power Supply

• 2400MHz to 2500MHz Operation

• Two Gain Settings: 28dB or 12dB

•4.5dBCascadedNF,HighGainMode

• 20mA DC Current Consumption

• Input IP

3

: -23dBm or -8dBm

RF2444 High Frequency LNA/Mixer
RF2444 PCBA-H Fully Assembled Evaluation Board (2.5GHz)

8

Rev A3 010717

NOTES:

1. Shaded lead is pin 1.

2. Lead coplanarity - 0.10 with
respectto datum "A".

3. Lead standoff is specifiedfromt he
lowestpoint on thepackage underside.

8° MAX

0° MIN

0.60

+0.15

0.24

0.20

3.90

+0.10

0.25

+0.05

0.65

6.00

+0.20

4.90

+0.20

1.40

+0.10

0.05

+0.05

Note 3

-A-

Dimensions in mm.

3.302

2.286

EXPOSED DIE

FLAG

Package Style: SSOP-16 EDF Slug

8-54

RF2444

Rev A3 010717

8

FRONT-ENDS

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to 3.6 V

DC

Input LO and RF Levels +6 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Moisture Sensitivity JEDEC Level 5 @ 220°C

Parameter

Specification

Unit Condition

Min. Typ. Max.

Overall

T=25°C, VCC=3.3V, RF=2400MHz,

LO =2120MHz, -1 0dBm
RF Frequency Range 2400 to 2500 MHz
IF Frequency Range 10 280 500 MHz
Cascade Gain 28 dB IF=280MHz, GAIN SEL = 1

12 dB IF=280MHz, GAIN SEL = 0

Cascade IP3 -23 dBm Referenced to the input, GAIN SEL = 1

-8 dBm Referenced to the input, GAIN SEL = 0

Cascade Noise Figure 4.5 dB Single sideband, GAIN SEL = 1

18 dB Single sideband, GAIN SEL = 0

Input P1dB -28 dBm GAIN SEL = 1

-14 dBm GAIN SEL = 0

LNA

Noise Figure 2.3 dB GAIN SEL = 1

7 dB GAIN SEL = 0
Input VSWR 2:1 No external matching
Input IP3 -3 dBm GAIN SEL = 1

-3 dBm GAIN SEL = 0

Gain 10 dB GAIN SEL = 1

-6 dB GAIN SEL = 0
Reverse Isolation 22 dB
Output Impedance 50 Ω

RF Amp and Mixer

Noise Figure 10 dB Single sideband
Input Impedance 50 Ω
Input IP3 -17 dBm
Conversion Power Gain 18 dB With Current Combiner (1kΩ between open

collectors and 250Ωsingle ended load)

Output Impedance 4 kΩ Open Collector

LO Input

LO Level -15 -10 0 dBm
LO to RF Rejection 42 dB LO input to LNA input
LO to IF Rejection 15 dB LO input to IF output
LO Input VSWR 2:1

Power Down Control

Logic Controls “ON” VCC-0.3 V Voltage at the input of RX EN, PD
Logic Controls “OFF” 300 mV and GAIN SEL

Turn on Time 400 1000 nS From PD Going high.
Turn on Time 100 200 nS From RX EN Going high. PD = “1”

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

Refer to “Handling of PSOP and PSSOPProducts”
on page 16-15 for special handling information.

8-55

RF2444

Rev A3 010717

8

FRONT-ENDS

Parameter

Specification

Unit Condition

Min. Typ. Max.

Power Supply

Voltage 2.7 3.3 3.6 V
Current Consumption 20 26 mA GAIN SEL = 1, RX EN =1, PD = 1

20 25 mA GAIN SEL = 0, RX E N =1, PD = 1
12 16 mA GAIN SEL = X, RX EN =0, PD = 1

1 µA GAIN SEL = X, RX EN =X, PD = 0

8-56

RF2444

Rev A3 010717

8

FRONT-ENDS

Pin Function Description Interface Schematic

1 GAIN SEL

LNA gain control. When GAIN SEL is >VCC-300mV, LNA gain is at 10
dB. When GAIN SEL is <300mV, the LNA gain is -6dB.

See pin 16.

2LNAIN

This pin is NOT internally DC blocked. An external blocking capacitor
must be provided if the pin is connected to a device with DC present. If
a blocking capacitor is required, a value of 2pF is recommended.

See pin 16.

3PD

The power enable pin. When PD is >VCC-300mV, the part is biased
on. When PD is <300mV, then the part is turned off and typically draws

less than 1µA.

4 VCC1

Supply voltage for bias circuits and logic control. A 10pF external
bypass capacitor is required and an additional 0.01µF is required if no
other low frequency bypass capacitors are nearby. The trace length
between the pin and the bypass capacitors should be minimized. The
ground side of the bypass capacitors should connect immediately to
ground plane.

5 VCC2

Supply voltage for LO_Buffer. A 10pF bypass capacitor is required and
an additional 0.01µF is required if there is no other low frequency
bypass capacitor in the area. The trace length between the pin and the
bypass capacitors should be minimized. The ground side of t he bypass
capacitors should connect immediately to ground plane.

See pin 8.

6MIXOUT-

The inverting open collector output o f the mixer. This pin needs to be
externally biased and DC isolated from other parts of the circuit. This
output can drive a Balun, with MIXOUT+, to convert to unbalanced to
drive a SAW filter. The Balun can be either broadband (transformer) or
narrowband (discrete LC matching). Alternatively, MIXOUT+ may be
used alone to drive a SAW single-ended, with an RF choke (high Z at
IF)fromVCCtoMIXOUT-.

7MIXOUT+

The non-inverting open collector output of the mixer. This pin needs to
be externally biased and DC isolated from other parts of the circuit.
This output can drive a Balun, withMIXOUT+, toc onvert to unbalanced
to drive a SAWfilter. The Balun can be either broadband (transformer)
or narrowband (discrete LC matching). Alternatively, MIXOUT+ may be
used alone to drive a SAW single-ended, with an RF choke (high Z at
IF)fromVCCtoMIXOUT+.

See pin 6.

8LOIN

LO input pin. This input needs a DC blocking cap. External matching is
recommended to 50Ω.

9RXEN

This control pin allows the mixer output pins to be put into a high
impedance state. This allows the transmit signal path to sh are the
same IF filter as the receiver.

10 VCC3

Supply voltage for mixer preamp. See pin 12.

11 GND3

Ground pin for mixer preamp. This lead inductance should be kept
small.

See pin 12.

12 MIX IN

Mixer RF Input port. This pin is NOT internally DC blocked. An external
blocking capacitor must be provided if the pin is con nected to a device
with DC present. A value of >22pF is recommended. To minimize the
noise figure it is recommended to have a bandpass filter before this
input. This will prevent the noise at the image frequency from being
convertedtotheIF.

MIX OUT+ MIX OUT-

LO IN

VCC2

VCC3

GND3

MIX IN

8-57

RF2444

Rev A3 010717

8

FRONT-ENDS

Pin Function Description Interface Schematic

13 NC
14 NC
15 LNA OUT

RF signal ou tput for external 50Ω filtering.The use of a filte r here is
optional but does provide for lower noise floor and better out-of-band
rejection.

See pin 16.

16 VCC4

Supply voltage for the LNA. This pin should be bypassed with a 10 pF
capacitor to ground as close to the pin as possible. The shunt induc­tance from this pin to ground via the supply decoupling must be tuned
to match the LNA output to 50Ω at the desired operating frequency.

P2

LNA IN

BIAS

VCC4

P1

GAIN SEL

P15

LNA OUT

EXTERNAL

DECOUPLING

Microstrip

-16 dB

8-58

RF2444

Rev A3 010717

8

FRONT-ENDS

Th

eory of Operation

RX

15dB Gain

IL= 3-4 dB

2.4to 2.483 GHz

LNA

DualGain Modes

-5dB and +10dB

Gain

Select

RF2444

SSOP-16 EPP

Filter

2.4to 2.483 GHz

SAW

IL=10dBmax

RX

TX

15dB

15dB

IF Amp

-15dB to 35dB Gain

DATAQ

OUTQ

RSSI

DATAI

OUTI

Filter

Filter

SelectableLPF

TX

Σ

IINPUT

QINPUT

15dB Gain

Range

+45°

-45°

IL= 3-4 dB

2.4to 2.483 GHz

10dBm

PADriver

RF2938

TQFP-48 EPP

VGC1

VGC2

BaseBand Amp.

ActiveSelectable LPF

(f

C

=1 MHz to40 MHz)

0-30dB Gain

RF MicroDevices

2.4 GHzISM Chipset

23dBm or 33dBm

ExternalPA

RF2126

IF

VCO

RF

VCO

RF2517

SSOP-28

Dual

Frequency

Synthesizer

Discrete

PinDiode

Figure 1. Entire Chipset Functional Block Diagram

The RF2444 contains the LNA/Mixer for this chipset.
The LNA is made from two stages including a common
emitter amplifier stage with a power gain of 13dB and
an attenuator which has an insertion loss of 3dB in
high gain mode, and 17dB in low gain mode. The
attenuator was put after the LNA so that system noise
figure degradation would be minimized. A single gain
stage was used prior to the image filter to maximize
IP3 which minimizes the risk of large out-of-bad signals
jamming the desired signal.

The mixer on the RF2444 is also two stages. The first
stage is a common emitter amp used to boost the total
power gain prior to the lossy SAW filter, to convert to a
differential signal to the input of the mixer, and to
improve the noise figure of the mixer. The second
stage is a double balanced mixer whose output is dif­ferential open collector. It is recommended that a “cur­rent combiner” is used (as shown in figure 2) at the
mixer output to maximize conversion gain, but other
loads can also be used. The current combiner is used
to do a differential to single ended conversion for the
SAW filter. C1, C2 and L1 are used to tune the circuit
for a specific IF frequency. L2 is a choke to supply DC
current to the mixer that is also used as a tuning ele­ment, a long with C3, to match to the SAW filter’s input
impedance. RL is the SAW filter’s input impedance.

The mixer power conversion gain is +19dB when R1 is
set to 1kΩ. The conversion gain can be adjusted up
~5 dB or down ~7dB by changing the value of R1.
Once R1 is chosen, L2 and C3 can be used to tune the
output for the SAW filter.

The cascaded power gain of the LNA/Mixer is 29dB,
which after insertion loss in the image filter (~3dB) and
IF SAW filter (~10d B), still gives 16dB of g ain prior to
the IF amps. Because of this, the noise figure of the IF
amps should not significantly degrade system noise
figure.

The LNA input should be matched for a good return
loss for optimum gain and noise figure. To allow the
designer to match each of these ports, 2-port s-param­eter data is available for the LNA, and 1-port data is
available for MIXER IN and LO IN.

L1
R1

C1 C2

L2

C3

RL

V

CC

OUT

Open Collector

Mixer Output

Figure 2. Current Combiner for Mixer Load

8-59

RF2444

Rev A3 010717

8

FRONT-ENDS

Application Schematic

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

LNA

MIXER

RF AMP

Bias

Circuits

DIE FLAG (17)

22 pF

GS

2pF

CE

22 nF

VCC1
VCC2

220 nH1k

Ω

3pF

3pF

4pF

47 nH

22 nF

6.8 nH

C2

1pF

10 pF

OE

2.7 nH

22 nF

VCC3

VCC4

22 nF

4.7 nH

1.5 pF

3pF

LNA IN

IF OUT

LO IN

4.7µF

Bandpass

Filter

4.7µF

8-60

RF2444

Rev A3 010717

8

FRONT-ENDS

Evaluation Board Schema t ic

(Download Bill of Materials from www.rfmd.com.)

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

LNA

MIXER

RF AMP

Bias

Circuits

DIE FLAG (17)

C10

22 pF

GS

50Ωµstrip

C1

2pF

50Ωµstrip

J1

LNA IN

CE

C11

22 nF

VCC1
VCC2

L2

220 nH

R1

1k

Ω

C3

3pF

C4

3pF

50Ωµstrip

C19
4pF

L3

47 nH

50Ωµstrip

J3

IF OUT

C14

22 nF

L1

6.8 nH

50

Ω

µ

strip

C2

1pF

50

Ω

µ

strip

C5

10 pF

50Ωµstrip

J2

LO IN

OE

L7

2.7 nH

C9

22 nF

VCC3

VCC4

C6

22 nF

50Ωµstrip

L5

4.7 nH

50Ωµstrip

C8

1.5 pF

*C16

22 pF

50Ωµstrip

J5

MIX IN

50Ωµstrip

C7

3pF

50Ωµstrip

*C15

22 pF

50Ωµstrip

J4

LNA OUT

*R2

0

Ω

*R3

0

Ω

GS

CE
GND
VCC4

C18

4.7

µ

F

P2

1
2
3
4

P1

1
2

GND

VCC1, VCC2

OE

GND

VCC3

C17

4.7

µ

F

P3

1
2
3

2444400 Rev.A

*For cascaded configuration, jumpers R2and R3
need to be installed withC15 and C16 taken out.

Bandpass

Filter

*To test LNA and Mixerseparately remove R2 and
R3, and fit C15 andC16.

8-61

RF2444

Rev A3 010717

8

FRONT-ENDS

Evaluation Board Layout

Board Thickness 0.031”, Board Material FR-4

NOTE: In the following charts, all cascaded data measured with a bandpass filter inserted between LNA OUT and MIX
IN, having cut frequencies:f

L

= 2400MHz, fM= 2484MHz, and insertion loss=1.2dB.

8-62

RF2444

Rev A3 010717

8

FRONT-ENDS

LNA + Mixer Gain versus VCC (2.45 GHz),

Attenuator Off

25.0

26.0

27.0

28.0

29.0

30.0

31.0

32.0

33.0

2.73.03.33.6

VCC

Gain (dB)

-40C Gain
25C Gain
85C Gain

LNA + Mixer IIP3 versus VCC(2.45 GHz),

Attenuator Off

-31.0

-30.0

-29.0

-28.0

-27.0

-26.0

-25.0

-24.0

2.73.03.33.6

VCC

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

LNA + Mixer Gain versus RF Frequency (3.3 V),

Attenuator Off

26.00

27.00

28.00

29.00

30.00

31.00

32.00

33.00

34.00

2.40 2.45 2.50

RF Frequency (GHz)

Gain (dB)

-40C Gain
25C Gain
85C Gain

LNA + Mixer IIP3 versus RF Frequency (3.3V),

Attenuator Off

-32.00

-31.00

-30.00

-29.00

-28.00

-27.00

-26.00

-25.00

-24.00

2.40 2.45 2.50

RF Frequency (GHz)

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

LNA + Mixer Gain versus VCC (2.45 GHz),

Attenuator On

9.0

9.5

10.0

10.5

11.0

11.5

12.0

12.5

13.0

13.5

14.0

2.73.03.33.6

VCC

Gain (dB)

-40C Gain
25C Gain
85C Gain

LNA + Mixer IIP3 versus VCC(2.45 GHz),

Attenuator On

-10.4

-10.2

-10.0

-9.8

-9.6

-9.4

-9.2

-9.0

-8.8

-8.6

2.7 3.0 3.3 3.6

VCC

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

8-63

RF2444

Rev A3 010717

8

FRONT-ENDS

LNA + Mixer Gain versus RF Frequency (3.3 V),

Attenuator On

9.00

9.50

10.00

10.50

11.00

11.50

12.00

12.50

13.00

13.50

14.00

14.50

15.00

2.40 2.45 2.50

RF Frequency (GHz)

Gain (dB)

-40C Gain
25C Gain
85C Gain

LNA + Mixer IIP3 versus RFFrequency (3.3 V),

Attenuator On

-11.00

-10.50

-10.00

-9.50

-9.00

-8.50

-8.00

-7.50

-7.00

2.40 2.45 2.50

RF Frequency (GHz)

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

LNA + Mixer SSB Noise Figure versus VCC (2.45 GHz),

Attenuator Off

4.4

4.6

4.8

5.0

5.2

5.4

5.6

2.7 3.0 3.3 3.6

VCC

SSB Noise Figure (dB)

25C NF
85C NF

-40C NF

L

NA + Mixer SSBNoise Figure versus

RF Frequency (3.3 V), Attenuator Off

3.00

3.50

4.00

4.50

5.00

5.50

2.40 2.45 2.50

RF Frequency (GHz)

SSB Noise Figure (dB)

25C NF
85C NF

-40C NF

LNA + Mixer SSB Noise Figure versus VCC (2.45 GHz),

Attenuator On

17.8

18.0

18.2

18.4

18.6

18.8

19.0

19.2

19.4

19.6

19.8

2.73.03.33.6

VCC

SSB Noise Figure (dB)

25C NF
85C NF

-40C NF

LNA+MixerSSBNoiseFigureversus

RF Frequency (3.3 V), Attenuator On

13.00

14.00

15.00

16.00

17.00

18.00

19.00

20.00

2.40 2.45 2.50

RF Frequency (GHz)

SSB Noise Figure (dB)

25C NF
85C NF

-40C NF

8-64

RF2444

Rev A3 010717

8

FRONT-ENDS

LNA + Mixer Gain versus IF Frequency (3.3 V)

26.0

27.0

28.0

29.0

30.0

31.0

32.0

0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 450.0 500.0

IF Frequency (MHz)

Gain (dB)

Gain

LNA + Mixer IIP3 versus IF Frequency (3.3 V)

-31.0

-30.0

-29.0

-28.0

-27.0

-26.0

-25.0

-24.0

-23.0

0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 450.0 500.0

IF Frequency (MHz)

IIP3 (dBm)

IIP3

LNA ICCversus VCC

(PD = 1, RX EN = 0)

10.9

11.1

11.3

11.5

11.7

11.9

12.1

12.3

12.5

12.7

2.73.03.33.6

VCC

I

CC

(mA)

25C LNA Icc
85C LNA Icc

-40C LNA Icc

Total ICCversus VCC

(PD = 1, RX EN = 1)

18.0

18.5

19.0

19.5

20.0

20.5

21.0

2.73.03.33.6

VCC

I

CC

(mA)

25C Total Icc
85C Total Icc

-40C Total Icc

Isolation

-48.00

-43.00

-38.00

-33.00

-28.00

-23.00

-18.00

-13.00

2.12 2.17 2.22

LO Frequency (GHz)

Isolation (dB)

LO-mixin
LO-LNAin
LNAin-LNAout
LO-IFout

8-65

RF2444

Rev A3 010717

8

FRONT-ENDS

LNA Gain versus VCC (2.45 GHz),

Attenuator Off

9.5

9.6

9.7

9.8

9.9

10.0

10.1

10.2

10.3

10.4

10.5

2.73.03.33.6

VCC

Gain (dB)

-40C Gain
25C Gain
85C Gain

LNA IIP3 versus VCC (2.45 GHz),

Attenuator Off

-2.8

-2.7

-2.6

-2.5

-2.4

-2.3

-2.2

-2.1

-2.0

2.7 3.0 3.3 3.6

VCC

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

LNA Gain versus VCC (2.45 GHz),

Attenuator On

-5.6

-5.4

-5.2

-5.0

-4.8

-4.6

-4.4

-4.2

-4.0

2.7 3.0 3.3 3.6

VCC

Gain (dB)

-40C Gain
25C Gain
85C Gain

LNA IIP3 versus VCC (2.45 GHz),

Attenuator On

-3.0

-2.8

-2.6

-2.4

-2.2

-2.0

-1.8

2.7 3.0 3.3 3.6

VCC

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

LNA Gain versus RF Frequency (3.3 V),

Attenuator Off

9.70

9.80

9.90

10.00

10.10

10.20

10.30

10.40

10.50

10.60

10.70

2.40 2.45 2.50

RF Frequency (GHz)

Gain (dB)

-40C Gain
25C Gain
85C Gain

LNA IIP3 versus RF Frequency (3.3 V),

Attenuator Off

-3.50

-3.00

-2.50

-2.00

-1.50

-1.00

-0.50

0.00

2.40 2.45 2.50

RF Frequency (GHz)

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

8-66

RF2444

Rev A3 010717

8

FRONT-ENDS

LNA Gain versus RF Frequency (3.3 V),

Attenuator On

-5.50

-5.30

-5.10

-4.90

-4.70

-4.50

-4.30

-4.10

-3.90

-3.70

2.40 2.45 2.50

RF Frequency (GHz)

Gain (dB)

-40C Gain
25C Gain
85C Gain

LNA IIP3 versus RF Frequency (3.3 V),

Attenuator On

-2.90

-2.80

-2.70

-2.60

-2.50

-2.40

-2.30

-2.20

-2.10

-2.00

-1.90

2.40 2.45 2.50

RF Frequency (GHz)

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

LNA Noise Figure versusVCC (2.45 GHz),

Attenuator Off

2.10

2.12

2.14

2.16

2.18

2.20

2.22

2.24

2.26

2.28

2.30

2.32

2.70 3.00 3.30 3.60

VCC

Noise Figure (dB)

-40C NF
25C NF
85C NF

LNA Noise Figure versus RF Frequency (3.3 V),

Attenuator Off

2.10

2.15

2.20

2.25

2.30

2.35

2.40

2.45

2.50

2.40 2.45 2.50

RF Frequency (GHz)

Noise Figure (dB)

-40C NF
25C NF
85C NF

LNA Noise Figure versusVCC (2.45 GHz),

Attenuator On

5.0

5.5

6.0

6.5

7.0

7.5

8.0

8.5

9.0

2.7 3.0 3.3 3.6

VCC

Noise Figure (dB)

-40C NF
25C NF
85C NF

LNA Noise Figure versus RF Frequency (3.3 V),

Attenuator On

5.00

5.50

6.00

6.50

7.00

7.50

8.00

8.50

9.00

2.40 2.45 2.50

RF Frequency (GHz)

Noise Figure (dB)

-40C NF
25C NF
85C NF

8-67

RF2444

Rev A3 010717

8

FRONT-ENDS

MixerGain versus VCC (2.45 GHz)

16.0

17.0

18.0

19.0

20.0

21.0

22.0

2.73.03.33.6

VCC

Gain (dB)

-40C Gain
25C Gain
85C Gain

Mixer IIP3 versus VCC (2.45 GHz)

-18.0

-17.5

-17.0

-16.5

-16.0

-15.5

-15.0

-14.5

2.7 3.0 3.3 3.6

VCC

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

MixerGain versus RF Frequency (3.3 V)

16.00

17.00

18.00

19.00

20.00

21.00

22.00

2.40 2.45 2.50

RF Frequency (GHz)

Gain (dB)

-40C Gain
25C Gain
85C Gain

MixerIIP3 versus RF Frequency (3.3 V)

-18.50

-18.00

-17.50

-17.00

-16.50

-16.00

-15.50

-15.00

2.40 2.45 2.50

RF Frequency (GHz)

IIP3 (dBm)

-40C IIP3
25C IIP3
85C IIP3

MixerSSB Noise Figureversus VCC (2.45 GHz)

10.0

10.5

11.0

11.5

12.0

12.5

13.0

13.5

2.73.03.33.6

VCC

SSB Noise Figure (dB)

-40C NF
25C NF
85C NF

MixerSSB NoiseFigure versusRF Frequency(3.3 V)

7.00

8.00

9.00

10.00

11.00

12.00

13.00

2.40 2.45 2.50

RF Frequency (GHz)

SSB Noise Figure (dB)

-40C NF
25C NF
85C NF

8-68

RF2444

Rev A3 010717

8

FRONT-ENDS

MixerGain versus LO Amplitude

(VCC= 3.3 V, RF Frequency = 2.45 GHz)

14

15

16

17

18

19

20

-24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6

LO Amplitude(dBm)

Gain (dB)

Gain

Mixer IIP3 versus LO Amplitude

(VCC= 3.3 V, RF Frequency = 2.45 GHz)

-20

-19

-18

-17

-16

-15

-14

-24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6

LO Amplitude(dBm)

IIP3 (dBm)

IIP3