Page 1
Preliminary
RF2416
4
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
Product Description
The RF2416 is a dual-band low noise amplifier with
bypass switch designed for use as a front-end for
950 MHz GSM and DCS1800/PCS1900 applications. It
may also be used for dual-band cellular/PCS application.
The 900MHz LNA is a single-stage amplifier with bypass
switch; the 1800/1900 LNA is a two-stage amplifier with
bypass switch.Both amplifiers have excellent noise figure
and high linearity in both high gain and bypass/low gain
mode.Thedeviceispackagedina3mmx3mm,12pin,
leadless chip carrier.
DUAL-BAND 2.7V LOW NOISE AMPLIFIER
• General Purpose Amplification
• Commercial and Consumer Systems
1.00
0.85
0.80
0.65
12°
max
0.05
0.01
NOTES:
Shaded Pin is Lead 1.1
Dimension applies to plated terminaland is measuredbetween 0.02 mm and
2
0.25 mm fromterminal end.
Pin 1 identifier must exist on top surface of package by identification mark or
3
feature on the package body.Exact shape and size is optional.
Package Warpage: 0.05 mm max.
4
5 Die thickness allowable: 0.305 mm max.
0.60
0.24typ
0.30
2
0.18
0.75
0.50
0.50
3.00
sq.
0.65
0.30
4PLCS
1.25
sq.
0.95
0.23
0.13
4PLCS
Dimensions in mm.
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
HB BIAS
HB IN
ü
SiGe HBT
1
2
3
HB GND1
LB IN
VCC1 HB
Logic
Control
LB GND
Si CMOS
HB GND2
101112
654
LB OUT
HB OUT
9
HB SELECT
8
LB SELECT
7LB BIAS
Functional Block Diagram
Package Style: LCC, 12-Pin, 3x3
Features
• Low Noise and High Intercept Point
• Dual-Band Application GSM900 and
DCS1800/PCS1900
• Power Down Control
•SwitchableGain
Ordering Information
RF2416 Dual-Band 2.7V Low Noise Amplifier
RF2416 PCBA Fully Assembled EvaluationBoard
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A2 010810
4-199
Page 2
RF2416
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +6.0 V
Input RF Level +10 dBm
Storage Temperature -40 to +150 °C
DC
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
Parameter
Min. Typ. Max.
Specification
Unit Condition
Operating Range
Overall Frequency Range 800 1000 MHz Low Band Operatio n
1800 2000 MHz High Band Operation
Supply Voltage (V
Power Down Voltage(V
Logic Control Voltage Level 0 3.0 V HB SELECT, LB SELECT
Operating Ambient Temperature -40 +85
Input Impedance 50 Ω
Output Impedance 50 Ω
AMPLIFIERS
950MHz Performance -
GENERAL PURPOSE
High Gain Mode
Gain 14 15.5 17 dB
Gain VariationOver
Temperature Range
Gain VariationOver
Frequency Band
Noise Figure 1.1 2.0 dB
Reverse Isolation 15 21 dB
Input IP3 +2.0 +5.0 dBm
Input P1dB -12 -9 dB
Input VSWR 2:1
Output VSWR 2:1
Total Current Draw 4.8 6.0 mA 900MHz LNA ENABLED, 1900MHz LNA
950MHz Performance -
Bypass Mode
Gain -8 -6 -3 dB
Gain Reduction 21.5 dBc
Input IP3 12.0 15.0 dBm
Input P1dB -1 +2 dB
Input VSWR 2.5:1
Output VSWR 2:1
Total Current Draw See Application Notes
) 2.7 2.8 3.0 V VCC1 HB, VCC2 HB, VCC1 LB
CC
) 2.7 2.8 3.0 V HB BIAS, LB BIAS
BIAS
o
C
T= 25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V, LBSelect=0V,
=50Ω
Z
IN=ZO
+
0.5 dB
0.5 dB
+
DISABLED. I
T= 25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V,LBSelect=2.7V,
Z
IN=ZO
CC+IPD
=50Ω
4-200
Rev A2 010810
Page 3
Preliminary
RF2416
Parameter
Min. Typ. Max.
1850MHz Performance -
High Gain Mode
Gain 15 17.5 19 dB
Gain Variation Over
Temperature Range
Gain Variation Over
Frequency Band
Noise Figure 1.5 2.1 dB
Reverse Isolation 15 20 dB
Input IP3 -2.0 +1.0 dBm
Input P1dB -13 -10 dB
Input VSWR 2:1
Output VSWR 2:1
Total Current Draw 8.2 10 mA 1900MHz LNA ENABLED, 900MHz LNA
1850MHz Performance -
Bypass Mode
Gain -7 -5 -3 dB
Gain Reduction 22 23 24 dBc
Input IP3 12.0 15.0 dBm
Input P1dB +5 +8 dB
Input VSWR 2:1
Output VSWR 2.5:1
Total Current Draw See Applications Notes
AGC Settling Time 10 µs
Rise and FallTime 10 µs
Specification
+
0.5 dB
0.5 dB
+
Unit Condition
T= 25°C, RF=1850MHz, VCC1HB=2.78V,
HBSelect=0V, Z
DISABLED. I
T= 25°C, RF=1850MHz, VCC1HB=2.78V,
HBSelect=2.7V, Z
CC+IPD
IN=ZO
IN=ZO
=50Ω
=50Ω
4
AMPLIFIERS
GENERAL PURPOSE
Rev A2 010810
4-201
Page 4
RF2416
L
Preliminary
Pin Function Description Interface Schematic
1HBIN
DCS1800/PCS1900 RF input pin.
To Bias
Circuit
HB IN
VCC1 HB
HB GND1
4
2HBBIAS
3LBBIAS
AMPLIFIERS
GENERAL PURPOSE
4LBIN
5LBGND
HB BIAS is set to the supply voltage at high gain mode. For bypass
mode see “Gain Select Possibility”.
LB BIAS is set to the supply voltage at high gain mode. For bypass
mode see “Gain Select Possibility”.
GSM900 RF input pin.
LNA emittance inductance. Total inductance is comprised of
package +bondwire+L2 on PCB.
To Bias
Circuit
LB IN
HB VREF/P
LB VREF/PD
BOUT
LB GND
6LBOUT
7 LB SELECT
8 HB SELECT
9HBOUT
4-202
GSM900 Amplifier Output pin. This pin is an open-collector output. It
must be biase d to V
is typically matched to 50Ω with a shunt bias/matching inductor and
series blocking/matching capacitor. Refer to application schematics.
This pin se lects high gain and bypass for GSM900.
Select <
Select >
This pin selects high gain and bypass for DCS1800/PCS1900.
Select <
Select >
DCS1800 Amplifier Output pin. This pin is an open-collector output. It
must be biase d to V
is typically matched to 50Ω with a shunt bias/matching inductor and
series blocking/matching capacitor. Refer to application schematics.
0.8V, high g ain.
1.8V, low gain.
0.8V, high g ain.
1.8V, low gain.
through a choke or matching inductor. This p in
CC
through a choke or matching inductor. This p in
CC
LB SEL EC T
HB SELECT
HB OUT
HB GND2
Rev A2 010810
Page 5
Preliminary
RF2416
Pin Function Description Interface Schematic
10 HB GND2
LNA2 emittance inductance. Total inductance is comprised of
package+bondwire+L5 on PCB.
11 VCC1 HB
12 HB GND1
Open collector for first stage LNA of DCS1800/PCS1900. It must be
biased to V
LNA1 emittance inductance. Total inductance is comprised of
package+bondwire+L7 on PCB.
through a choke or matching inductor.
CC
VCC1 HB
HB GND1
4
AMPLIFIERS
GENERAL PURPOSE
Rev A2 010810
4-203
Page 6
4
RF2416
Preliminary
Applicat ion Notes
Bypass Mode Configurations
The RF2416 may be placed into either high gain or bypass mode via the HB SELECT and LB SELECT pins for high
band and low band operation, respectively. The high gain state is selected by asserting the select pin for the appropriate
band to a voltage level of less than 0.8V. For Bypass operation, there are two possible methods for placing the RF2416
into this low gain state. The table below shows the two possible Bypass states for each mode.
RF2416 Bypass Mode Possibilities
Gain Select
(HB Mode)
2.7 0 2.78 1.4
2.7 2.7 2.78 1.9
Gain Select
(LB Mode)
2.7 0 2.78 0.8
2.7 2.7 2.78 1.5
AMPLIFIERS
For both Bypass configurations, the select pin for the appropriate band must be placed at a level greater than or equal to
GENERAL PURPOSE
1.8 V. The difference between the Bypass possibilities is determined by the specific application’s ability to change the
voltage of the bias pins independently of V
mode is shown by the decreased current draw when in this Bypass configuration.
HB BIAS (V)
LB BIAS (V) VCC1_LB (V) Current (mA)
VCC1_HB and
VCC2_HB (V)
. The advantage of the ability to assert the bias pins to 0V when in Bypass
CC
Current (mA)
4-204
Rev A2 010810
Page 7
Preliminary
RF2416
Evaluation Board Schemati c
(Download Bill of Materials from www.rfmd.com.)
J1
HB IN
HB BIAS
LB BIAS
J2
LB IN
P1-1 HB BIAS
P1-3 LB BIAS
P1
1
2
3
CON3
50 Ωµstrip
GND
L1
47 nH
C1
33 nF
R1
0 Ω
R2
0 Ω
P2-1 HB SELECT
P2-3 LB SELECT
C3
0.1 µF
50 Ωµstrip
P2
1
2
3
CON3
GND
50 Ωµstrip
C2
0.1 µF
2416310, rev. 3
VCC1 HB
L7
1.0 nH
L2
6.8 nH
C4
33 nF
P3-1 VCC1HB
P3-3 VCC1LB
L6
3.3 nH
1
2
Control
3
R3
0 Ω
P3
1
2
3
CON3
Logic
GND
C14
100 pF
C13
0.1 µF
L3
8.2 nH
VCC1 LB
101112
654
L5
1.0 nH
9
8
7
C5
0.1 µF
C6
100 pF
VCC1 HB
L4
3.3 nH
C7
2.0 pF
C12
100 pF
C11
0.1 µF
C10
0.7 pF
C9
0.1 µF
50 Ωµstrip
50 Ωµstrip
C8
0.1 µF
J4
HB OUT
HB SELECT
LB SELECT
J3
LB OUT
4
AMPLIFIERS
GENERAL PURPOSE
Rev A2 010810
4-205
Page 8
4
RF2416
Preliminary
Evaluation Board Layout
Board Size 2” x 2”
Board Thickness 0.060”, B oard Material FR-4, Multi-Layer
AMPLIFIERS
GENERAL PURPOSE
4-206
Rev A2 010810
Page 9
Preliminary
RF2416
Low Band Bypass Mode (S11)
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0.2
2
.
0
-
4
.
0
-
6
.
0
-
0.4
4.5 GHz
5GHz
0.6
8
.
0
-
1.0
0.8
2.0
3GHz
4GHz
Low Band High Gain Mode (S11)
8
.
1.0-1.0
0
6
.
0
4
.
0
5GHz
2
.
0
4GHz
0
0.2
0.4
2
.
0
-
3.5 GHz
3GHz
4
.
0
-
6
.
0
-
1.0
0.6
0.8
2GHz
8
.
0
-
2.0
950 MHz
0
.
2
3.0
4.0
950 MHz
0
.
2
-
0
.
2
3.0
4.0
10 MHz
500 MHz
0
.
2
-
Swp Max
0
.
3
5.0
10 MHz
0
.
0.01GHz
Swp Max
0
.
3
5.0
0
.
6GHz
0
.
4
0
.
5
.
0
1
10.0
0
.
0
0
.
5
-
0
.
4
-
3
-
Swp Min
6GHz
0
.
4
0
.
5
.
0
1
10.0
0
.
0
0
.
5
-
0
.
4
-
3
-
Swp Min
0.01GHz
Low Band Bypass Mode (S22)
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0
0.2
0.4
1
-
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
4GHz5.5 GHz
Swp Max
6GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
10 MHz
4
AMPLIFIERS
GENERAL PURPOSE
0
.
2
-
950 MHz
0
.
3
-
1.5 GHz
Swp Min
0.01GHz
0
.
0
1
-
0
.
5
-
0
.
4
-
Low Band High Gain Mode (S22)
.
2
3.0
0
.
0
5.0
4.0
10 MHz
500 MHz
2
-
Swp Max
0
.
3
.
4
10.0
0
.
0
.
3
-
Swp Min
0.01GHz
6GHz
0
0
.
5
1
0
0
.
4
-
0
.
0
.
0
1
-
5
-
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0
0.2
1
-
2
.
0
-
4
.
0
-
5.5 GHz
0.6
3.5 GHz
8
.
0
-
0.8
1.0
1.5 GHz
0.4
5GHz
4.5 GHz
6
.
0
-
2.0
950 MHz
Rev A2 010810
4-207
Page 10
RF2416
Preliminary
4
High Band Bypass Mode (S11)
2
3.0
0
.
4.0
2GHz
0
.
2
-
Swp Max
0
.
3
5.0
10 MHz
500 MHz
0
.
3
-
Swp Min
0.01GHz
4
10.0
0
6GHz
0
.
0
.
5
1
0
.
0
.
.
4
-
0
.
0
0
1
-
5
-
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0.2
2
.
0
-
4
.
0
-
AMPLIFIERS
GENERAL PURPOSE
0.4
1.5 GHz
6
.
0
-
1850 MHz
0.6
0.8
4GHz
8
.
0
-
1.0
3GHz
2.0
5GHz
1GHz
High Band High Gain Mode (S11)
3.0
0
.
2
0
.
2
-
5.0
4.0
10 MHz
3GHz
500 MHz
Swp Max
0
.
3
0
.
4
5
10.0
0
0
.
0
.
3
-
Swp Min
0.01GHz
6GHz
0
.
.
0
1
0
.
0
.
5
-
4
-
0
1
-
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0.2
0.4
2GHz
2
.
0
-
1850 MHz
4
.
0
-
6
.
0
-
0.6
8
.
0
-
0.8
1.5 GHz
1.0
2.0
2.5 GHz
4GHz
1GHz
High Band Bypass Mode (S22)
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
0.6
0
-
1.0
0.8
4.5 GHz
8
.
High Band High Gain Mode (S22)
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
0.6
0
-
8
.
4GHz
1.0
0.8
3.5 GHz
1850 MHz
2.0
2.0
4.5 GHz
2
3.0
4GHz
0
3.0
0
.
4.0
.
2
-
0
.
2
4.0
1GHz
0
.
2
-
.
3
5.0
0
.
1850 MHz
3
5.0
10 MHz
0
Swp Max
6GHz
0
0
.
4
0
.
5
0
1
10.0
10 MHz
0
.
1GHz
0
.
5
0
.
4
-
3
-
Swp Min
0.01GHz
Swp Max
6GHz
0
.
0
.
4
0
.
5
0
1
10.0
0
.
0
.
0
.
4
-
.
3
-
Swp Min
0.01GHz
0
.
0
1
-
-
0
.
0
1
-
5
-
S-Parameter Conditions:
All plots shown were taken at VCC=2.78V and Ambient Temperature=25°C.
Note:
All S11 and S22 plots shown were taken from an RF2416 while on a 2416310 evaluation board. The data was captured without the external input or output tuning components in place, and the reference point at the HB IN and HB OUT pins for high band and LB IN and LB
OUT for low band.
4-208
Rev A2 010810
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