Datasheet RF2381, RF2381PCBA Datasheet (RF Micro Devices)

RF2381

.

1

4

Typical Applications

• CDMA PCS/Cellular Handsets

• TDMA PCS/Cellular Handsets

Product Description

The RF2381 is a linear variable gain amplifier suitable for
use in TDMA and CDMA systems in the cellular or PCS
band and for W-CDMA systems. The features of this
device include linear gain control, high gain, and high lin­earity. The IC is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (GaAs HBT)
process and is featured in an industry-standard miniature
6-lead plastic SOT package.

PCS/CELLULAR TDMA/CDMA/W-CDMA

LINEAR VA RIABLE GAIN AMPLIFIER

• W-CDMA Handsets

.80

1.40

TEXT

1.90

9°
1°

*

3.00

2.60

All dimensions in mm.

.50
.35

.25
.10

.37 MIN.

3.10

2.70

1.30

1.00

*When Pin 1 is in
upper left, text
reads downward
(as shown).

10 MAX.

.90
.70

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

RF OUT

GND

GC

ü

SiGe HBT

1

2

3

ATT ATT

Si CMOS

6

5

4

VCC

GND

RF IN

Functional Block Diagram

Package Style: SOT23-6

Features

• 50dB Linear Gain Control Range

•22dBMaximumGain

• Single 2.7V to 3.3V Supply

• 35mA Supply Current

• High Linearity

Ordering Information

RF2381 PCS/Cellular TDMA/CDMA/W-CDMA Linear Vari-

RF2381 PCBA Fully Assembled EvaluationBoard

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

able Gain Amplifier

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A1 010511

4-43

RF2381

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage 0 to +5.0 V
DC Current 100 mA

Operating Ambient Temperature -30 to +85 °C
Storage Temperature -40 to +150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believes the furnishedinformation is correct and accurate
at the time of this printing. However, RF Micro Devices reservesthe right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

Parameter

Min. Typ. Max.

Overall

Usable Frequency Range 800 to 2100 MHz
Linear Gain Control Range 50 dB
Gain Control Slope 70 dB/V
Input VSWR 1.5:1 2.5:1 Over entire gain control range
Output VSWR 1.5:1 2.5:1 Over entire gain control range
Output IP3 +23 +26 dBm
Noise Figure 9 dB Maximum gain

TDMA

AMPLIFIERS

GENERAL PURPOSE

Operating Frequency 1880 MHz
Maximum Small Signal Gain 18 20 22 dB
Maximum Average Output Power +8 dBm TDMA modulation; ACP<
Maximum Average Input Power -9 -8 dBm TDMA modulation; for any V

Adjacent Channel Power -33 -32 dBc TDMA modulation; P

CDMA

Operating Frequency 1880 MHz
Maximum Small Signal Gain 18 20 22 dB
Maximum Average Output Power +6 dBm CDMA modulation; V

Maximum Average Input Power -13 dBm CDMA modulation; for any V

Adjacent Channel Power -53 dBc CDMA modulation; V

W-CDMA

Operating Frequency 1920 to 1980 MHz
Small Signal Gain 17.5 19.5 22 dB
Maximum Linear Output Power +5 dBm W-CDMA ACP<-46dBc
Adjacent Channel Power -46 dBc W-CDMA modulation; P

Specification

-61 -52 dBc TDMA modulation; P

-43 dBc W-CDMA modulation; Over entire gain con-

-43 dBc W-CDMA modulation; V

Unit Condition

VCC=2.8V, VGC=2.0V, T=25°C

VCC=2.8V, VGC=2.0V, T=25°C

P

OUT

P

<-11dBm,atallVGC.

IN

P

<-11dBm,atallVGC.

IN

VCC=2.8V, VGC=2.0V, T=25°C

gain setting, ACP<

P

OUT

P

OUT

VCC=2.8V, VGC=2.0V, T=25°C

P

<-12dBm

IN

trol range, P

P

<-14dBm

IN

-32 dBc
that gives

<+8dBm, ACP<-32dBc, ALT<-52dBc

-52dBc.

<+6dBm, ACP<-52dBc

<+6dBm and PIN<-13dBm,atallVGC.

<-17dBm

IN

GC

<+8dBm and

OUT

<+8dBm and

OUT

=3.0V, maximum

CC

that gives

GC

=3.0V.

CC

<+5dBm and

OUT

=1.0V,

GC

4-44

Rev A1 010511

RF2381

Parameter

Min. Typ. Max.

Power Supply

Supply Voltage 2.8 V Specifications

Gain Control Voltage (V
Supply Current 35 mA VCC=2.8V,VGC=2.2V

Current -2.0 +2.4 mA VGC=0.4V to 2.2V

V

GC

)0to2.2V

GC

Specification

2.7 to 3.3 V Operating range

50 mA V
21 mA V

Unit Condition

T=25°C

=3.3V,VGC=2.2V

CC

=2.8V,VGC=0.4V

CC

4

AMPLIFIERS

GENERAL PURPOSE

Rev A1 010511

4-45

4

RF2381

Pin Function Description Interface Schematic

1RFOUT

2GND
3GC

4RFIN
5GND

6VCC

AMPLIFIERS

GENERAL PURPOSE

RF output pin. This pin is DC-coupled and requires VCCthroughabias
inductor sized accordingly to provide a h igh pass transformation with a

series capacitor.
Ground connection. For best performance, keep traces physically shor t

and connect immediately to ground plane.
Analog gain control pin. This p in controls the gain of the IC. Minimum

gain occurs at V
V

=2.0V. 50dB of linear gain control with little variation of input P

GC

is available.
RF input pin. This pin is DC-coupled.

Ground connection. For best performance, keep traces physically shor t
and connect immediately to ground plane.

Power supply. This pin should be connected to a regulated supply and
requires a series inductor and bypass capacitor. Voltage is supplied
through this pin to the first stage coll ector; this voltage also controls the
bias. Gain may be tuned by adjusting the value of the feed inductor.

<0.4V and maximum gain is achieved with

GC

1dB

Application Schematic

1850MHz to 1910MHz

100 pF

RF IN

VCC RF OUT

33 nF

2.7 nH

33 pF

4

5

6

Note orientationof

package in this schematic.

ATTATT

*For W-CDMA,use 2.2 nH

33 nF

3

2

1pF

1

2.7 nH*

GC

VCC

4-46

Rev A1 010511

Evaluation Board Schemati c

P1

P1-1 GC

P1-3
P1-4

1
2

GND
VCC

3
4

GND

5

RF2381

J1

RF IN

VCC

50Ωµstrip

C3

33 nF

C1

100 pF

L2

2.7 nH

C2

33 pF

2381401-

4

5

6

Note orientationof

package in this schematic.

C4

33 nF

3

ATTATT

2

1

C8

1pF

L3

2.7 nH

C5

33 pF

50Ωµstrip

C6

33 nFC71

GC

J2

RF OUT

VCC

µ

F

4

AMPLIFIERS

GENERAL PURPOSE

Rev A1 010511

4-47

4

RF2381

Evaluation Board Layout

Board Size 2.0” x 2.0”

Board Thickness 0.028”, Board Material FR-4, Multi-Layer

AMPLIFIERS

GENERAL PURPOSE

4-48

Rev A1 010511

RF2381

TDMAACP versus P

-25

-27

-29

-31

PIN=-9dBm, f=1880 MHz, VCC=2.8 V

+25°C

-30°C
+85°C

over Temperature,

OUT

ACP (dBc)

-33

-35

-37

-50 -40 -30 -20 - 10 0 10 20

P

(dBm)

OUT

Supply Current versus Gain-Control Voltage over

(mA)

CC

I

45.00

40.00

35.00

30.00

25.00

20.00

15.00

10.00

5.00

Temperature,

Icc,mA,+25°C
Icc,mA,-30°C
Icc,mA,+85°C

PIN=-9dBm,F=1880MHz,VCC=2.8 V

TDMA AltCP versusP

-40

-45

-50

-55

PIN=-9dBm, f=1880 MHz, VCC=2.8 V

Note: Below P
testequipment noisefloor inhibits
accurate AltCP measurement

over Temperature,

OUT

=-35 dBm,

OUT

AltCP (dBc)

-60

-65

-70

-50 -40 -30 -20 - 10 0 10 20

P

(dBm)

OUT

Gain versus Gain-Control Voltage over Temperature,

30.00

20.00

10.00

0.00

-10.00

Gain (dB)

-20.00

-30.00

-40.00

PIN=-9 dBm, F-1880 MHz,VCC=2.8 V

+25°C

-30°C
+85°C

+25°C

-30°C
+85°C

4

AMPLIFIERS

GENERAL PURPOSE

0.00

0.00 0.50 1.00 1.50 2.00 2.50

-35

Note: Below VGC=~1.1V,
test equipment noisefloor inhibits

-40

accurateACP measurement

-45

-50

ACPR (dBc)

-55

-60

0.8 1 1.2 1.4 1.6 1.8 2

Rev A1 010511

VGC(V)

W-CDMAACPRversusV

at Various Output Powers

VGC(V)

GC

Pout=+2dBm
Pout=+3dBm
Pout=+4dBm
Pout=+6dBm
Pout=+8dBm

-50.00

0.00 0.50 1.00 1.50 2.00 2.50

VGC(V)

NF versus VGC

(RF Freq. 1950MHz, V

60.0

50.0

40.0

30.0

NF (dB)

20.0

10.0

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

=2.8V, VGC=2.0 to 0.2V)

CC

VGC(V)

NF [dB]

4-49

RF2381

4

Output Power versus Input Power

18.0

16.0

14.0

12.0

10.0

Output Power (dBm)

8.0

6.0

4.0

-14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0

(RF Freq. 1950MHz, V

Pout[dBm]

InputPower (dBm)

=2.8V, VGC=2.0V)

CC

AMPLIFIERS

GENERAL PURPOSE

4-50

Rev A1 010511