Datasheet RF2377, RF2377-410PCBA, RF2377-411PCBA Datasheet (RF Micro Devices)

RF2377

.

1

4

Typical Applications

• CDMA PCS/Cellular Handsets

• TDMA PCS/Cellular Handsets

Product Description

The RF2377 is a linear variable gain amplifier suitable for
use in TDMA and CDMA systems in the cellular or PCS
band and for W-CDMA systems. The features of this
device include linear gain control, high gain, and high lin­earity. The IC is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (GaAs HBT)
process and is featured in an industry-standard miniature
6-lead plastic SOT package.

PCS/CELLULAR TDMA/CDMA/W-CDMA

LINEAR VA RIABLE GAIN AMPLIFIER

• W-CDMA Handsets

.80

1.40

1.90

9°
1°

TEXT*

3.00

2.60

All dimensions in mm.

.50
.35

.25
.10

.37 MIN.

3.10

2.70

1.30

1.00

*When Pin 1 is in
upper left, text
reads downward
(as shown).

10 MAX.

.90
.70

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

RF OUT

GND

GC

ü

SiGe HBT

1

2

3

ATT ATT

Si CMOS

6

5

4

VCC

GND

RF IN

Functional Block Diagram

Package Style: SOT23-6

Features

• 50dB Linear Gain Control Range

•24dBMaximumGain

• Single 2.7V to 3.3V Supply

• 45mA Supply Current

• High Linearity

Ordering Information

RF2377 PCS/Cellular TDMA/CDMA/W-CDMA Linear Vari-

RF2377-410 PCBAFully Assembled Evaluation Board, PCS
RF2377-411 PCBAFullyAssembled Evaluation Board, W-CDMA

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA

able Gain Amplifier

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A9 010411

4-43

RF2377

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage 0 to +5.0 V
DC Current 100 mA

Operating Ambient Temperature -20 to +85 °C
Storage Temperature -40 to +150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

Parameter

Min. Typ. Max.

Overall

Usable Frequency Range 800 to 2200 MHz
Linear Gain Control Range 50 dB
Gain Control Slope 70 dB/V

TDMA

Operating Frequency 1880 MHz
Maximum Small Signal Gain 22 24 27 dB
Input VSWR 1.5:1 2.5:1 Over entire gain control range
Output IP3 +23 +26 dBm

AMPLIFIERS

GENERAL PURPOSE

Noise Figure 7 dB Maximum gain
Maximum Average Output Power +8 dBm TDMA modulation
Adjacent Channel Power

Rejection

Alternate Channel Power

Rejection

CDMA

Operating Frequency 1880 MHz
Maximum Small Signal Gain 22 24 27 dB
Input VSWR 1.5:1 2.5:1 Over entire gain control range
Output IP3 +23 +26 dBm
Noise Figure 7 dB Maximum gain
Maximum Average Output Power +11 dBm CDMA modulation; V

Adjacent Channel Power

Rejection

W-CDMA

Operating Frequency 1920 to 1980 MHz
Small Signal Gain 20 22 24 dB V

Input VSWR 1.5:1 2.5:1 Over entire gain control range
Output IP3 +22 +24 dBm
Noise Figure 4 5 6 dB Maximum gain

Maximum Linear Output Power +8 +9 dBm W-CDMA ACPR<-46dBc, V
Adjacent Channel Power

Rejection

Specification

-33 -32 dBc TDMA modulation; P

-61 -57 dBc TDMA modulation; P

-53 dBc CDMA modulation; V

-33 -32 -31 dB V

32 32.5 34 dB Minimum gain

-48 -46 dBc W-CDMA modulation; V

-43 dBc W-CDMA modulation; Over entire gain con-

-43 dBc W-CDMA modulation; V

Unit Condition

VCC=2.8V, VGC=2.0V, T=25°C

VCC=2.8V, VGC=2.0V, T=25°C

VCC=2.8V, VGC=2.0V, T=25°C

gain setting, ACPR<

P

>-16dBm, adjustment of PINis required

IN

to maintain ACPR performance over gain
control range. For P

formance is maintained over entire gain con­trol range.

VCC=2.8V, T=25°C

=2.0V

GC

=0.3V

GC

P

<-12dBm

IN

trol range, P

P

<-14dBm

IN

<-17dBm

IN

=+8dBm

OUT

=+8dBm

OUT

=3.0V, maximum

CC

-52 dBc.
=3.0V. For

CC

<-16dBm, ACPR per-

IN

=2.0V

GC

=2.0V,

GC

=1.0V,

GC

4-44

Rev A9 010411

RF2377

Parameter

Min. Typ. Max.

Power Supply

Supply Voltage 2.8 V Specifications

Gain Control Voltage 0 to 2.0 V
Supply Current 40 45 60 mA V

Current 1.5 mA

V

GC

Specification

2.7 to 3.3 V Operating range

56 mA V

20 mA V

Unit Condition

T=25°C

=2.8V,VGC=2.0V

CC

=3.0V,VGC=2.0V

CC

=2.8V,VGC=0.4V

CC

4

AMPLIFIERS

GENERAL PURPOSE

Rev A9 010411

4-45

4

RF2377

Pin Function Description Interface Schematic

1RFOUT

2GND
3GC

4RFIN
5GND

6VCC

AMPLIFIERS

GENERAL PURPOSE

RF output pin. This pin is DC coupled and requires VCCthroughabias
inductor sized accordingly to provide a h igh pass transformation with a

series capacitor.
Ground connecti on. Keep traces physically short and connect immedi-

ately to ground plane for best performance.
Analog gain control pin. This p in controls the gain of the IC. Minimum

gain occurs at V
V

=2.0V. 50dB of linear gain control with little variation of input P

GC

<0.4V and maximum gain is achieved with

GC

1dB

is available.
RF input pin. This pin is DC coupled.

Ground connecti on. Keep traces physically short and connect immedi­ately to ground plane for best performance.

Power supply. This pin should be connected to a regulated supply and
requires a bypass capacitor. Voltage is supplied through this pin to the
first stage collector; this voltage also controls the bias. Gain may be
tuned by adjusting the value of the feed inductor.

Application Schematic

RF IN

VCC

RF IN

100 pF

4.7 nH

VCC RF OUT

47 nF

4

5

6

Note orientationof

package in this schematic.

3

ATTATT

47 nH

2

1pF

1

3.3 nH

GC

VCC

W-CDMA Applicatio n Schematic

2.2 nH

0.5 pF

29 nH

15 pF

4.7 nH

15 pF

4

5

6

Note orientation of

package in this schematic.

3

ATTATT

2

1.2 pF

1

2.7 nH

15 pF 1uF

47 nH

29 nH

GC

RF OUT

VCC

4-46

Rev A9 010411

J1

RF IN

VREG/VCC

50 Ωµstrip

Evaluation Board Schemati c

(W-CDMA)

P1

1

VGCP1-1

2

GND

3

VREG/VCCP1-3
VREG/VCC

4

GND

5

4

5

6

Note orientation of

package in this schematic.

3

ATTATT

2

1

C2

0.5 pF

L1

2.2 nH
L4

47 nH

C3

15 pF

P1-4

C1

15 pF

C7

0.5 pF

L2

4.7 nH

2377401-

C6

1.2 pF

L3

2.7 nH

C5

15 pF

RF2377

C4

47 nH

L5

47 nH

+

C16

1 µF

VGC

J2

RF OUT

VREG/VCC

4

AMPLIFIERS

GENERAL PURPOSE

VREG

J1

RF IN

C1

100 pF

Evaluation Board Schemati c

(PCS)

P1

1

VGCP1-1

2

GND
VCCP1-3

3

P1-4

R1

0kΩ

L2

4.7 nH

C3

47 nF

4

GND

5

4

5

6

Note orientationof

package in this schematic.

C4

47 nH

3

ATTATT

2

1

2377400A

VGC

2.2 nH

VREG/VCC

L3

C16

1uF

+

C5

47 nF

C6

1.2 pF
J2

RF OUT

Rev A9 010411

4-47

4

RF2377

Evaluation Board Layout (PC S)

Board Size 2.0” x 2.0”

Board Thickness 0.028”, Board Material FR-4

AMPLIFIERS

GENERAL PURPOSE

4-48

Rev A9 010411

Evaluation Board Layout (W-CDMA)

Board Size 2.0” x 2.0”

Board Thickness 0.028”, Board Material FR-4

RF2377

4

AMPLIFIERS

GENERAL PURPOSE

Rev A9 010411

4-49

RF2377

4

W-CDMA ACPR versus VGCat Various

Maximum Output Powers; V

-35.0

Note: Below VGC=~0.9V,
testequipment noisefloor inhibits
accurate ACP measurement

-40.0

-45.0

-50.0

ACPR (dBc)

-55.0

-60.0

0.8 1.0 1.2 1.4 1.6 1.8 2.0

AMPLIFIERS

GENERAL PURPOSE

60.0

50.0

40.0

(mA)

30.0

CC

I

20.0

ICCversus VGCover Temperature

W-CDMA Board; V

T=-20°C
T=+25°C
T=+85°C

= 2.8 V, Freq = 1950 MHz

CC

Max Pout=+2dBm
Max Pout=+3dBm
Max Pout=+4dBm
Max Pout=+6dBm
Max Pout=+8dBm

VGC(V)

=2.8V,Freq=1950MHz

CC

30.0

20.0

10.0

0.0

Gain (dB)

-10.0

-20.0

-30.0

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

3.5

3.0

2.5

2.0

SWR

1.5

1.0

Gain versus VGCover Temperature

W-CDMA Board; V

=2.8V,Freq=1950MHz

CC

VGC(V)

SWR versus V

GC

T=-20°C
T=+25°C
T=+85°C

W-CDMA Board; VCC=2.8V,Freq=1950MHz

Input
Output

4-50

10.0

0.0

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VGC(V)

Noise Figure versus V

W-CDMA Board; VCC=2.8V,Freq=1950MHz

35.0

30.0

25.0

20.0

15.0

GC

Noise Figure (dB)

10.0

5.0

0.0

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VGC(V)

0.5

0.0

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VGC(V)

Rev A9 010411