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RF2376

Datasheet RF2376, RF2376PCBA Datasheet (RF Micro Devices)

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Page 1
Preliminary
.
1
RF2376
4
CELLULAR TDMA/CDMA LINEAR
VARIABLE GAI N AMPLIFIER
• CDMA Cellular Handsets • TDMA Cellular Handsets
Product Description
The RF2376 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular band. The features of this device include linear gain control, high gain, and low noise figure. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package.
1.90
9° 1°
.80
1.40
TEXT*
3.00
2.60
All dimensions in mm.
.37 MIN.
4
10 MAX
.50 .35
3.10
2.70
AMPLIFIERS
GENERAL PURPOSE
.25 .10
.90 .70
1.30
1.00
*When Pin 1 is in upper left, text reads downward (as shown).
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS
RF OUT
GND
GC
ü
SiGe HBT
1
2
3
ATTEN
Si CMOS
6
5
4
VCC
GND
RF IN
Functional Block Diagram
Package Style: SOT23-6
Features
• 50dB Linear Gain Control Range
•27dBMaximumGain
• Single 2.7V to 3.3V Supply
• 30mA Supply Current
• High Linearity
• 7dB Noise Figure
Ordering Information
RF2376 Cellular TDMA/CDMA Linear Variable Gain Amplifier RF2376 PCBA Fully Assembled EvaluationBoard
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A2 010829
4-43
Page 2
RF2376
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage 0 to +5.0 V DC Current 100 mA
Operating Ambient Temperature -20 to +85 °C Storage Temperature -40 to +150 °C
DC
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
4
Parameter
Min. Typ. Max.
Overall
Operating Frequency 836 MHz Usable Frequency Range 800 to >1000 MHz Maximum Small Signal Gain 24 27 30 dB Linear Gain Control Range 50 dB Gain Control Slope 70 dB/V Maximum gain. Input VSWR 1.5:1 2.5:1 Over entire gain control range Output IP3 +22 +25 dBm Noise Figure 7 dB Maximum gain
AMPLIFIERS
GENERAL PURPOSE
Maximum Average Output Power +8 dBm TDMA modulation Adjacent Channel Power
Rejection
Alternate Channel Power
Rejection
Maximum Average Output Power +10 dBm CDMA modulation; V
Adjacent Channel Power
Rejection
Alternate Channel Power
Rejection
Power Supply
Supply Voltage 2.8 V Specifications
Gain Control Voltage 0 to 2.0 V Supply Current 25 30 40 mA V
V
Current 1.5 mA
GC
Specification
-33 -32 dBc TDMA modulation; P
-61 -57 dBc TDMA modulation; P
-53 dBc CDMA modulation; V
-67 dBc CDMA modulation; P
2.7 to 3.3 V Operating range
34 mA V
18 mA V
Unit Condition
VCC=2.8V,VGC=2.0V,T=25°C
gain setting, ACPR<
P
>-23dBm, adjustment of PINis required
IN
to maintain ACPR performance over gain control range. For PIN<-23dBm, ACPR per-
formance is maintained over entire gain con­trol range.
V
=3.0V.
CC
T=25°C
=2.8V,VGC=2.0V
CC
=3.0V,VGC=2.0V
CC
=2.8V,VGC=0.4V
CC
=+8dBm
OUT
=+8dBm
OUT
=3.0V, maximum
CC
-52 dBc. =3.0V.For
CC
=+10dBm,
OUT
4-44
Rev A2 010829
Page 3
Preliminary
RF2376
Pin Function Description Interface Schematic
1RFOUT
2GND 3GC
4RFIN 5GND
6VCC
RF output pin. This pin is DC coupled and requires VCCthrough a bias inductor sized accordingly to provide a high pass transformation with a
series capacitor. Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance. Analog gain control pin. This pin controls the gain of the IC. Minimum
gain occurs a t V V
=2.0V.50dB of linear gain control with little variation of input P
GC
is available. RF input pin. This pin is AC coupled.
Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.
Power supply. This pin should be connected to a regulated supply and requires a bypass capacitor. Voltage is supplied through this pin to the first stage collector; this voltage also controls the bias. Gain may be tuned by adjusting the value of the feed inductor.
<0.4V and maximum gain is achieved with
GC
1dB
Application Schemati c
4
AMPLIFIERS
GENERAL PURPOSE
47 nH
RF IN
4.7 nH
VCC RF OUT
47 nF
4
5
6
package in this schematic.
ATTEN
Note orientation of
3
2
2.7 pF
1
12 nH
GC
VCC
Rev A2 010829
4-45
Page 4
4
RF2376
Preliminary
Evaluation Board Schema t ic
P1
2376400B
1 2
GND VREG/VCC
3
VREG/VCC
4
GND
5
CON5
4
5
6
ATTEN
Note orientation of
package in this schematic.
C9
33 pF
VREG/VCC
C16
1uF
C4
47 nH
3
2
1
VGC
R1* DNI
L3
12 nH
+
C5
47 nF
C7
100 pF
C6
2.7 pF
J2
RF OUT
P1-1 VGC
P1-3 P1-4
C2*
J1
RF IN
VREG
C1
100 pF
AMPLIFIERS
GENERAL PURPOSE
C3
47 nF
L1
6.8 nH
L2
4.7 nH
C8
33 pF
4-46
Rev A2 010829
Page 5
Preliminary
RF2376
Evaluation Board Layout
Board Size 2.0" x 2.0"
Board Thickness 0.028”; Board Material FR-4
4
AMPLIFIERS
GENERAL PURPOSE
Rev A2 010829
4-47
Page 6
RF2376
Preliminary
4
(Frequency 836MHz @ -18dBm, VCC=3.0V, VGC=2.0V to 0.0V)
Gain versus VGC(CDMA)
40.0 Gain[dB]@-40C
30.0
20.0
10.0
Gain (dB)
-10.0
-20.0
-30.0
Gain[dB]@+25C Gain[dB]@+85C
0.0
0.00.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.92.0
VGC(V)
AMPLIFIERS
GENERAL PURPOSE
4.5
4.0
3.5
3.0
2.5
2.0
VSWR S11
1.5
1.0
0.5
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VSWR versus VGC@ Room Temperature
(Frequency 836MHz, V
=3.0V, VGC=2.0V to 0.1V)
CC
RF INPUT PORT [S11] RF OUTPUTPORT [S22]
VGC(V)
Noise Figure (dB)
Adjacent Channel Power (dBc)
30.0
25.0
20.0
15.0
10.0
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
-70.0
Noise Figure versus VGC@ Room Temperature
(Frequency 836MHz, VCC=3.0V, VGC=2.0V to 0.5V)
NF [dB]
5.0
0.0
0.50.60.70.80.91.01.11.21.31.41.51.61.71.81.92.0
VGC(V)
ACPRversus VGC(CDMA)
(Frequency 836MHz @ -18dBm, VCC=3.0V, VGC=2.0V to 0.0V)
0.0 ACPR[dBc]@-40C
ACPR[dBc]@+25C ACPR[dBc]@+85C
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VGC(V)
4-48
Alternate Channel Power versusVGC(CDMA)
(Frequency 836MHz @ -18dBm, VCC=3.0V, VGC=2.0V to 0.0V)
0.0 Altr.Ch.Power[dBc]@-40C Altr.Ch.Power[dBc]@+25C Altr.Ch.Power[dBc]@+85C
0.00.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.92.0
VGC(V)
Alternate Channel Power (dBc)
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
-70.0
-80.0
-90.0
(RF Frequency 836MHz @ -17dBm,VCC=3.0V, VGC=2.0V to 0.0V)
Gain versus VGC(SingleToneTest)
Gain (dB)
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
-30.0
-40.0
Gain [dB] @ -40C Gain [dB] @ +25C Gain [dB] @ +85C
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VGC(V)
Rev A2 010829
Page 7
Preliminary
RF2376
IGCversus V
1500.0
1000.0
500.0
0.0
-500.0
(uA)
GC
-1000.0
I
-1500.0
-2000.0
-2500.0
-3000.0
0.00.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.92.
(VCC=3.0V, VGC=2.0V to 0.0V)
Igc [uA]
GC
VGC(V)
Gain versus Input Power
40.0
30.0
20.0
10.0
0.0
Gain (dB)
-10.0
-20.0
-30.0
-40.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0 10.0
(Frequency 836MHz, VCC=3.0V)
InputPower(dBm)
Gain[dB]@Vgc 2.0V Gain[dB]@Vgc 1.5V Gain[dB]@Vgc 1.0V Gain[dB]@Vgc 0.5V Gain[dB]@Vgc 0.3V
Gain (dB)
Gain & OIP3 versus V
(CDMAFrequency 836MHz, VCC=3.0V, VGC=2.0V to 0.0V)
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
Gain [dB] OIP3[dBm]
GC
4
-30.0
-40.0
0
0.00.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.92.0
VGC(V)
OutputPower versus Input Power
30.0
20.0
10.0
0.0
-10.0
-20.0
-30.0
Output Power (dBm)
-40.0
-50.0
-60.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0 10.0
(Frequency 836MHz, VCC=3.0V, VGC=2.0V)
Pout[dBm]@Vgc 2.0V Pout[dBm]@Vgc 1.5V Pout[dBm]@Vgc 1.0V Pout[dBm]@Vgc .5V Pout[dBm]@Vgc 0.3V
InputPower(dBm)
AMPLIFIERS
GENERAL PURPOSE
Rev A2 010829
4-49
Page 8
4
RF2376
AMPLIFIERS
GENERAL PURPOSE
Preliminary
4-50
Rev A2 010829
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