Page 1
Preliminary
RF2369
4
Typical Applications
• CDMA/Cellular Bypass LNA
• CDMA/Cellular Bypass Driver Amplifier
Product Description
The RF2369 is a switchable low noise amplifier with a
very high dynamic range designed for digital cellular
applications.The devicefunctionsas an outstanding front
end low noise amplifier. When used as an LNA, the bias
current can be set externally. When used as a PA driver,
the IC can operate directly from a single cell Li-ion battery
and includes a power down feature that can be used to
completely turn off the device. The IC is featured in a
standard SOT 6-lead plastic package.
3V LOW NOISE AMPLIFIER/
3V PA DRIVER AMPLIFIER
• General Purpose Amplification
• Commercial and Consumer Systems
1.80
1.90
9°
1°
All dimensions in mm.
1.40
*
3.00
2.60
0.50
TEXT
0.35
3.10
2.70
*WhenPin1isin
0.25
upper left, text
0.10
reads downward
0.37 MIN.
(as shown).
1.30
1.00
0.10 MAX.
0.90
0.70
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
ü
SiGe HBT
1VREF/PD SELECT6
2GND1
3RF IN 4 RF OUT
Logic
Control
Si CMOS
5 GND2
Functional Block Diagram
Package Style: SOT 6-Lead
Features
• Low Noise and High Intercept Point
• A djustable Bias Current
• LNA Bypass Loss is +2dB
• 1 50MHz to 2500MHz Operation
• Meets IMD Tests with Two Gain States/
Single Logic Control Line
Ordering Information
RF2369 3V Low Noise Amplifier/ 3V PA DriverAmplifier
RF2369 PCBA Fully Assembled Evaluation Board (LNA)
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A3 010720
4-183
Page 2
RF2369
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +8.0 V
Input RF Level +10 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
DC
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Overall
Frequency Range 150 824 to 894 2500 MHz
Specification
Unit Condition
T
=25°C, VCC=3.0V
AMB
Cellular Low Noise
Amplifier
Frequency 869 894 MHz
HIGH GAIN MODE Gain Select<0.8V, V
Gain 14.0 15.5 17.0 dB
Noise Figure 1.6 2.0 dB
AMPLIFIERS
Input IP3 9.0 11.5 dBm
Input VSWR 2:1
Output VSWR 2:1
Current Drain 7.5 10.0 mA
BYPASS MO DE Gain Select>1.8V, V
Gain -3 -2 -1 dB
Input IP3 +10 +24 dBm
Input VSWR 2:1
Output VSWR 2:1
Current Drain 2.0 4.0 mA
Cellular CDMA Driver
Frequency 824 849 MHz
HIGH GAIN MODE Gain Select<0.8V, V
Gain 14.0 15.5 17.0 dB
Noise Figure 2.0 2.5 dB
Output Power 4 dBm
ACPR1 -65 dBc/30kHz P
ACPR2 -70 dBc/30kHz P
Input VSWR 2:1
Output VSWR 2:1
Current Drain 8.5 mA
BYPASS MO DE Gain Select>1.8V, V
Gain -3.0 -2.0 -1.0 dB
Input IP3 +10 +24 dBm
Input VSWR 2:1
Output VSWR 2:1
Current Drain 2.0 4.0 mA
=+4dBm,+885kHz offset
OUT
=+4dBm,+1.98MHz offset
OUT
Power Supply
Voltage (VCC)3V
V
V
Power Down 0 10 µA Gain Select<0.8V, V
Low 0.8 V High Gain mode.
SELECT
High 1.8 V Low Gain mode.
SELECT
Select<0.8V,V
Select>1.8V,V
PD/VREF
PD/VREF
PD/VREF
PD/VREF
PD/VREF
PD/VREF
=3V
=0V
PD/VREF
=3V
=0V
=3V
=0V
=0V, VCC=0V
4-184
Rev A3 010720
Page 3
Preliminary
Bypass Possibility
Gain Select
>1.8V 0V 3V 2.3mA Recommended Bypass Mode
>1.8V 3V 3V 3.4mA Alternative Bypass Mode
V
PD/VREF
RF2369
V
CC
Current Comments
4
AMPLIFIERS
GENERAL PURPOSE
Rev A3 010720
4-185
Page 4
RF2369
Preliminary
Pin Function Description Interface Schematic
1VREF/PD
For low noise amplifi e r applications, this pin is used to control the bias
current. An external resistor can be used to set the bias current for any
voltage.
V
PD
VREF/PD
4
GENERAL PURPOSE
AMPLIFIERS
2 GND1
3RFIN
4RFOUT
5 GND2
6 SELECT
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF input pin.
Amplifier output pin. This pin is an open-collector output. It must be
biased toV
cally matched to 50Ω with a shunt bia s/matching inductor and series
blocking/matching capacitor. Refer to application schematics.
LNA emittance inductance. Total inductance is comprised of
package+bondwire+stripline (L1) on PCB.
This pin selects high gain and bypass.
Select <
Select >
through a choke or matching inductor. This pin is typi-
CC
0.8V, high gain.
1.8V, low gain.
RF IN
To Bias
Circuit
RF OUT
4-186
Rev A3 010720
Page 5
Preliminary
RF2369
Application Schemati c
Cellular Low Noise Amplifier ~881MHz
VREF/PD
J1
RF IN
VREF/PD
J1
RF IN
50 Ωµstrip
50 Ωµstrip
R1
1.6 kΩ
C6
33 nF
C2
0.1 µF
L3
6.8 nH
1 6
2
3
Logic
Control
C1
0.1 µF
L1
1.5 nH
5
C3
3pF
4
L2
10 nH
C5
10 nF
Application Schemati c
Cellular Driver Amplifier ~836MHz
R1
1.3 kΩ
C6
33 nF
C2
0.1 µF
L3
6.8 nH
1 6
2
3
Logic
Control
C1
0.1 µF
L1
1.5 nH
5
C3
3pF
4
L2
10 nH
C5
10 nF
50 Ωµstrip
C4
100 pF
50 Ωµstrip
C4
100 pF
SELECT
J2
RF OUT
VCC
SELECT
J2
RF OUT
VCC
4
AMPLIFIERS
GENERAL PURPOSE
Rev A3 010720
4-187
Page 6
RF2369
Preliminary
Evaluation Board Schematic - Cellular LNA
(Download Bill of Materials from www.rfmd.com.)
4
GENERAL PURPOSE
P1
P1-1 VCC
P1-3
VREF
J1
RF IN
1
2
3
CON3
50 Ωµstrip
GND
NC
R1
1.6 kΩ
C2
0.1 µF
C6
33 nF
AMPLIFIERS
NOTE: Components with * following reference designator
should not be populated on the evaluation board.
P2
P2-1 VREF
P2-3 SELECT
1
2
3
CON3
L3
6.8 nH
GND
1 6
2
3
2366401-
Logic
Control
C1
0.1 µF
SELECT
L1
1.5 nH
5
C3
3pF
4
R2*
DNI
C5
10 nF
L2
10 nH
C4
100 pF
50 Ωµstrip
J2
RF OUT
VCC
4-188
Rev A3 010720
Page 7
Preliminary
RF2369
Evaluation Board Layout
Board Size 1.0" x 1.0"
Board Thickness 0.032”, Board Material FR-4
4
AMPLIFIERS
GENERAL PURPOSE
Rev A3 010720
4-189
Page 8
RF2369
Preliminary
4
GENERAL PURPOSE
AMPLIFIERS
High Gain Mode Noise Figure versus VCC,
2.5
2.0
1.5
1.0
Noise Figure (dB)
0.5
0.0
2.5 2.7 2.9 3.1 3.3 3.5
IIP3 (High Gain Mode) versus V
14.0
13.0
12.0
Cellular LNA
VCC(V)
Cellular LNA
CC
NF,-30C
NF, +25C
NF, +85C
-2.2
-2.3
-2.4
-2.5
-2.6
Gain (Bypass Mode) versus V
Cellular LNA
CC
Bypass Gain (dB)
-2.7
-2.8
-2.9
2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
VCC(V)
17.0
16.5
Gain(HighGainMode)versusV
Cellular LNA
CC
TEMP = -30C
TEMP = 25C
TEMP = 85C
11.0
10.0
High Gain IIP3 (dB)
9.0
8.0
7.0
2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
VCC(V)
IIP3 (Bypass Mode) versus V
29.0
28.0
27.0
26.0
25.0
24.0
23.0
Bypass IIP3 (dB)
22.0
21.0
20.0
19.0
2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Cellular LNA
CC
VCC(V)
TEMP = -30C
TEMP = 25C
TEMP = 85C
TEMP = -30C
TEMP = 25C
TEMP = 85C
16.0
15.5
High Gain Gain (dB)
15.0
14.5
2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
VCC(V)
Total ICC(High Gain Mode)versus V
11.0
10.0
9.0
8.0
(mA)
CC
7.0
Total I
6.0
5.0
4.0
2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Cellular LNA
CC
TEMP = -30C
TEMP = 25C
TEMP = 85C
VCC(V)
TEMP=-30C
TEMP=25C
TEMP=85C
4-190
Rev A3 010720
Page 9
Preliminary
RF2369
Bypass
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
Swp Max
0
.
2
3.0
0
.
2
6GHz
4
.
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
-
Swp Min
0.05GHz
0
2
.
0
0
0.2
2
.
0
-
4
.
0
-
6
.
0
0.4
6
.
0
-
High Gain
8
.
1.0-1.0
0
1.0
0.6
0.8
8
.
0
-
Swp Max
0
.
2
2.0
3.0
0
.
6GHz
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
2
-
Swp Min
0.05GHz
4
AMPLIFIERS
GENERAL PURPOSE
Rev A3 010720
4-191
Page 10
RF2369
Preliminary
4
GENERAL PURPOSE
AMPLIFIERS
Bypass Mode S11
S11BypassMode
8
1.0-1.0
.
0
6
.
0
4
.
0
2
.
0
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
Bypass Mode S22
S22 Bypass Mode
6
.
0
4
.
0
2
.
0
1.0
0.6
0.8
8
.
0
-
8
1.0-1.0
.
0
2.0
3.0
Swp Max
6GHz
.0
2
4
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
.
2
.
0
0
2
.
0
-
.
0
-
Swp Min
0.05GHz
Swp Max
6GHz
0
.
2
4
0
.
3
0
.
4
0
.
5
0
.
0
1
.
2
.
0
High Gain Mode S11
S11 High Gain Mode
8
.
0
6
.
0
0
0.2
0.4
0.6
4
6
.
0
-
8
.
0
-
High Gain Mode S22
S22 High Gain Mode
8
.
0
6
.
0
0
1.0-1.0
1.0
0.8
2.0
Swp Max
6GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.05GHz
1.0-1.0
Swp Max
6GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
4-192
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
3.0
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.05GHz
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
3.0
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.05GHz
Rev A3 010720
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