Page 1
Preliminary
RF2367
4
Typical Applications
• TDMA/CDMA/FM PCS Tx Amplifier
• Low Noise Transmit Driver Amplifier
• 2.4GHz WLAN Systems
Product Description
The RF2367 is a low noise CDMA/TDMA/GSM PA driver
amplifier with a very high dynamic range designed for
transmit digital PCS applications with frequency ranges
between 1700MHz and 2000MHz. The device functions
as an outstanding PA driver amplifier in the transmit chain
of digital subscriber units where low transmit noise power
is a concern. The IC includes a power down feature that
canbeusedtocompletelyturnoffthedevice.The
RF2367 is featured in a standard SOT23-6 plastic package.
PCS CDMA/TDMA/GSM1800
3V PA DRIVER AMPLIFIER
• GSM1800 Driver Amplifier
• General Purpose Amplification
• Commercial and Consumer Systems
P
1.80
I
N
1.40
1
1.90
9°
1°
All dimensions in mm.
67XY
3.00
2.60
.50
.35
.25
.10
.37 MIN.
3.10
2.70
1.30
1.00
.10 MAX.
.90
.70
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
GND
RF IN
ü
SiGe HBT
1
2
3
Si CMOS
6
RF OUTGND
5
GND
PD
4
Functional Block Diagram
Package Style: SOT23-6
Features
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
• Single 2.5V to 6.0V Power Supply
• 150MHz to 2500MHz Operation
• Extremely Small SOT23-6 Package
Ordering Information
RF2367 PCS CDMA/TDMA/GSM1800 3V PA DriverAmplifier
RF2367 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A1 010619
4-193
Page 2
RF2367
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +8.0 V
Input RF Level +10 dBm
Storage Temperature -40 to +150 °C
DC
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Specification
Unit Condition
Operating Range
Overall Frequency Range 150 to 2500 MHz
Supply Voltage (V
Power Down Voltage (V
Total Current Consumption 24 37 45 mA V
Operating Ambient Temperature -40 +85
Input Impedance 50 Ω
AMPLIFIERS
Output Impedance 50 Ω
1880 MHz Performance
Gain 20 21.5 23 dB
Output IP3 +20 +24 dBm
Noise Figure 2.2 2.5 dB
Reverse Isolation 32 34 dB
Input VSWR 1.9:1 2:1
Output VSWR 1.5:1 2:1 Using Exter nal LC network used on Evalua-
Output P
1dB
)2.5 6.0V
CC
) 2.7 2.9 V For normal operation
PD
0.9 V For power down operation
CC
10 µAV
o
C
+13 +14 +15 dBm
CC
All parameters measured from evaluation
board with T =25°C, RF=1880MHz,
V
CC
tion Board
=3.0V,VPD=2.8V
=3.0V,VPD<0.9V
=3.0V,VPD=2.8V
4-194
Rev A1 010619
Page 3
Preliminary
RF2367
Pin Function Description Interface Schematic
1GND
2GND
3RFIN
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
Same as pin 1.
RF input pin. This pin is DC coupled and internally matched to a <2:1
VSWR at 1880MHz.
PD
4PD
5GND
6RFOUT
PowerDownfortheIC.VPD=2.8V +/- 0.1V turns on the Part.
V
approximately 1.2V. External RF bypassing is required. The trace
length between the pinand the bypass capacitors should be minimized.
The ground side of the bypass capacitors sho uld connect immediately
to ground plane. Nominal current for this pin for V
ical.
Same as pin 1.
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
This pin is typically externally matched to 50 Ω with a shunt bias/matching inductor and series blocking/matching capa citor. Refer to application/evaluation board schematics.
<0.9V turns off the Part. Lower threshold for device operation is
PD
=2.8V is 8mA typ-
PD
or pin 4 through a choke or matching inductor.
CC
RF IN
See pin 3.
TO OUTPUT
STAGE
4
AMPLIFIERS
GENERAL PURPOSE
Rev A1 010619
4-195
Page 4
RF2367
Application Schematic:
~1880 MHz Operation
4.7 nH
1
6
1pF
Preliminary
10 nF220 pF
VCC
RF OUT
4
GENERAL PURPOSE
AMPLIFIERS
J1
RF IN
RF IN
50 Ω µstrip
2
6pF
3
5
4
220 pF 10 nF
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
C7
4.7 µF
P1-1 VCC
P1-3 PD
C3
6pF
1
GND
2
3
4.7 nH
1
2
3
2367400-
6
5
4
220 pFC110 nF
L1
C4
1pF
C2
C5
220 pF
50 Ω µstrip
R1
0 Ω
PD
C6
10 nF
VCC
J2
RF OUT
PD
4-196
Rev A1 010619
Page 5
Preliminary
RF2367
Evaluation Board Layout
Board Size 0.948” x 1.063”
Board Thickness 0.031”, Board Mater ial FR-4
4
AMPLIFIERS
GENERAL PURPOSE
Rev A1 010619
4-197
Page 6
RF2367
Preliminary
4
GENERAL PURPOSE
AMPLIFIERS
Gain versus V
23.0
22.5
22.0
21.5
21.0
Gain (dB)
20.5
20.0
19.5
2.53.03.54.04.55.05.56.0
VPD= 2.8 V,Frequency= 1880 MHz
CC
Gain, -30º
Gain, 25º
Gain, 85º
VCC(V)
Noise Figure versus V
3.5
3.0
VPD= 2.8 V,Frequency= 1880 MHz
CC
OIP3 versus V
31.0
30.0
29.0
28.0
OIP3 (dBm)
27.0
26.0
25.0
2.53.03.54.04.55.05.56.0
VPD= 2.8 V,Frequency= 1880 MHz
CC
OIP3, -30º
OIP3, 25º
OIP3, 85º
VCC(V)
17.0
16.0
15.0
OutputP1dB versus V
VPD= 2.8 V,Frequency= 1880 MHz
CC
2.5
Noise Figure (dB)
2.0
1.5
2.53.03.54.04.55.05.56.0
NF, -30º
NF, 25º
NF, 85º
VCC(V)
ICCversus V
43.0
41.0
39.0
37.0
35.0
(mA)
CC
33.0
I
31.0
29.0
27.0
25.0
2.53.03.54.04.55.05.56.0
VPD= 2.8 V,Frequency= 1880 MHz
CC
Icc+Ipd,-30º
Icc+Ipd,25º
Icc+Ipd,85º
VCC(V)
14.0
13.0
Output P1dB (dBm)
12.0
11.0
10.0
2.53.03.54.04.55.05.56.0
OP1dB, -30º
OP1dB, 25º
OP1dB, 85º
VCC(V)
Gain versus V
23.0
22.5
22.0
Gain (dB)
21.5
21.0
20.5
2.70 2.75 2.80 2.85 2.90
VCC= 3.0 V,Frequency= 1880MHz
PD
Gain, -30º
Gain, 25º
Gain, 85º
VPD(V)
4-198
Rev A1 010619
Page 7
Preliminary
RF2367
OIP3 versus V
30.50
30.00
29.50
29.00
28.50
28.00
OIP3 (dBm)
27.50
27.00
26.50
26.00
25.50
2.70 2.75 2.80 2.85 2.90
VCC= 3.0 V,Frequency= 1880 MHz
PD
VPD(V)
OutputP1dB versus V
14.20
14.00
13.80
13.60
13.40
13.20
Output P1dB (dBm)
13.00
12.80
12.60
2.70 2.75 2.80 2.85 2.90
VCC= 3.0 V,Frequency= 1880 MHz
PD
VPD(V)
OIP3, -30º
OIP3, 25º
OIP3, 85º
OP1dB,-30º
OP1dB, 25º
OP1dB, 85º
NoiseFigureversusV
3.50
3.00
2.50
2.00
Noise Figure (dB)
1.50
1.00
2.70 2.75 2.80 2.85 2.90
VCC= 3.0 V,Frequency= 1880 MHz
PD
VPD(V)
IPDversus V
10.20
10.00
9.80
9.60
9.40
(mA)
9.20
PD
I
9.00
8.80
8.60
8.40
8.20
2.70 2.75 2.80 2.85 2.90
VCC= 3.0 V,Frequency= 1880 MHz
PD
VPD(V)
NF,-30º
NF,25º
NF,85º
Ipd, -30º
Ipd,25º
Ipd,85º
4
AMPLIFIERS
GENERAL PURPOSE
Gain versus Frequency
23.0
22.5
22.0
21.5
Gain (dB)
21.0
20.5
20.0
1850.0 1860.0 1870.0 1880.0 1890.0 1900.0 1910.0
VCC=3.0V,VPD=2.8V
Frequency(MHz)
Rev A1 010619
Gain, -30º
Gain, 25º
Gain, 85º
Input Impedance versus Frequency
2.10
2.05
2.00
1.95
1.90
Input VSWR
1.85
1.80
1.75
1850.00 1860.00 1870.00 1880.00 1890.00 1900.00 1910.00
VCC=3.0V,VPD=2.8V
S11, -30º
S11, 25º
S11, 85º
Frequency (MHz)
4-199
Page 8
4
GENERAL PURPOSE
AMPLIFIERS
RF2367
OutputImpedance versus Frequency
2.05
2.00
1.95
1.90
1.85
Output VSWR
1.80
1.75
1.70
1850.00 1860.00 1870.00 1880.00 1890.00 1900.00 1910.00
VCC=3.0V,VPD=2.8V
S22, -30º
S22,25º
S22,85º
Frequency (MHz)
Preliminary
4-200
Rev A1 010619
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