Page 1
RF2365
4
Typical Applications
• DCS GSM
• PCS CDMA
•PCS TDMA
Product Description
The RF2365 is a low noise amplifier with a high dynamic
range designed for the receive front end of digital cellular
applications at PCS/DCS frequencies. It is designed to
amplify low level signals with minimum noise contribution
while operating in the harsh, interference-rich environments of newly de ployed digital subscriber units. The part
provides excellent performance as a LNA for 2.4GHz
radio applications. The IC is featured in a standard
SOT5-lead plastic package.
3V LOW NOISE AMPLIF IER
• 2.4GHz Systems
• General Purpose Amplificatio n
• Commercial and Consumer Systems
2.90
+ 0.10
3° MAX
0° MIN
+ 0.01
0.950
1.60
1
2.80
+ 0.20
0.400
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
!
SiGe HBT
1RF IN
2GND1
3PD GND24
Si CMOS
5 RF OUT
0.45
+ 0.10
Package Style: SOT 5-Lead
Features
• 1.6dB Noise Figure @ 1850MHz
• 1.75dB Noise Figure @ 2450MHz
• 18.0dB Gain at PCS/DCS
• 15.5dB Gain at 2.45GHz
• External Bias Control
• Extremely Small SO T23-5 Pa ckage
Ordering Information
RF2365 3V Low Noise Amplifier
RF2365 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
Rev A4 001201
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-215
Page 2
RF2365
4
GENERAL PURPOSE
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +8.0 V
Input RF Level +10 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Parameter
Min. Typ. Max.
Specification
DC
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printi ng. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit Condition
Caution! ESD sensitive device.
Overall
RF Frequency Range 1500 2500 MHz
Schematic per 1.9GHz LNA Application
PCS Performance
Gain 16 18 20 dB V
Noise Figure 1.6 dB
Off Mode Gain -15 dB V
|S
AMPLIFIERS
|25dB
12
Input IP3 -3.5 dBm V
+2.0 dBm V
+4.0 dBm V
Output IP3 20.0 22.0 28.0 dBm V
Input VSWR 1.7
Output VSWR 1.4
2.4GHz Performance
Gain 15.5 dB V
Noise Figure 1.75 dB
Input IP3 +2.0 dBm V
Input VSWR 1.3
Output VSWR 1.75
Power Supply
Voltage (V
Current Consumption 5.0 8.0 11.0 mA VCC=3.0V, IIP3=+4.0dBm
Power Down 0 1 µAV
)3V
CC
6.5 mA V
5.0 mA V
Schematic, V
T=25°C
=3.0V, ICC=8.0mA
CC
=3.0V, VPD=0
CC
=3.0V, ICC=5.0mA, R1=150Ω (see
CC
application schematic)
=3.0V, ICC=6.5mA, R1=75Ω (see appli-
CC
cation schematic)
=3.0V, ICC=8.0mA, R1=0Ω (see appli-
CC
cation schematic)
=3.0V, ICC=8.0mA, R1=0Ω (see appli-
CC
cation schematic)
Schematic per 2.4GHz LNA Application
Schematic
T=25°C
=3.0V, ICC=8.0mA
CC
=3.0V, ICC=8.0mA
CC
T = 25 °C
=3.0V, IIP3=+2.0dBm
CC
=3.0V, IIP3=-3.5dBm
CC
=3.0V; V
CC
= 3.0 VCC = 3.0V,
PD
≤0.9V
PD
4-216
Rev A4 001201
Page 3
RF2365
Pin Funct ion Description Interface Schematic
1RF IN
2GND1
3PD
RF input pin. This pin is DC coupled.
Ground connection. See evaluation board schematic no tes.
Power down pin. This pin serves as the interstage for the 2-stage LNA.
An inductor is required to pull pin 3 to V
If desired, this voltage can be lowered to trade off IP3 versus I
(See table below.)
(see application schematic).
CC
CC,TOTAL
PD
To Bias
Circuit
RF IN
GND1
PD
.
To RF
Stages
4
4GND2
5RF OUT
Ground connection. See evaluation board schematic no tes.
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
This pin is typically matched to 50Ω with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application schematics.
or pin 4 through a choke or matching indu ctor.
CC
R1 IIP3
0Ω +4.0dBm 8.0mA
75Ω +2.0dBm 6.5mA
150Ω -3.5dBm 5.0mA
I
CC
To Bias
Circuit
GND2
AMPLIFIERS
GENERAL PURPOSE
Rev A4 001201
4-217
Page 4
RF2365
Application Schematic - 1.9GHz
4
GENERAL PURPOSE
AMPLIFIERS
RF IN
EN
NOTES:
* R1 is left open.
Ω
0
47 pF
1
22 nF
2
3.3 nH
5
43
Application Schematic - 2.4GHz
1
22 nF
47 pF
3.9 nH
1 pF
22 pF
3.9 nH
5
1.5 pF
V
CC
RF OUTRF IN
V
CC
RF OUT
4-218
EN
2
2.2 nH
43
22 pF
R1*
Rev A4 001201
Page 5
J1
R F IN
EN
Evaluation Board Schematic - 1.9GHz
(Download Bill of Materials from www.rfmd.com.)
P1
1
GND
P1-2 VCC
2
50 Ω µstrip 50 Ω µstrip
R1
Ω
0
C6
10 nF
47 pF
P2
1
GND
P2-2 EN
22 nF
*
3.3 nH
2
C1
L1
C5
C2
47 pF
2365400, Rev A
1
2
NOTES:
*Ground traces on pins 2 and 4 are equivalent to a 1.8 nH
inductor. If an inducto r is not used, the dimensions are as follows:
5
43
Length = 140 mils
Width = 20 mils
Height = 31 mils from the gound plane. Diele ctric is FR-4.
L2
3.9 nH
C4
1 pF
RF2365
C3
10 nF
VCC
J2
RF OUT
4
*
AMPLIFIERS
GENERAL PURPOSE
J1
RF IN
EN
Evaluation Board Schematic - 2.4GHz
P1
1
GND
P1-2 VCC
2
50 Ω µstrip 50 Ω µstrip
C6
10 nF
C5
22 pF
P2
1
GND
P2-2 EN
**
2.2 nH
2
C1
22 nF
L1
R1*
C2
22 pFC310 nF
2365401, Rev -
1
2
NOTES:
* R 1 is le ft ope n .
**Ground trace on pin 2 is equivalent to a 1.0 nH inductor. If an
inductor is not used, the dimensions are as follows:
5
43
Length = 85 mils
Width = 20 mils
Height = 31 m ils from the gound plane. Dielectric is FR-4.
L2
3.9 nH
C4
1.5 pF
VCC
J2
RF OUT
Rev A4 001201
4-219
Page 6
4
GENERAL PURPOSE
AMPLIFIERS
RF2365
Evaluation Board Layout
Board Size 1” x 1”
1.9GHz
Board Thickness 0.031”; Board Material FR-4
2.4GHz
4-220
Rev A4 001201
Page 7
RF2365
Gain versus Frequency and V
CC
(Temp = +25°C, RF IN = -36 dBm)
18.80
18.60
18.40
18.20
18.00
17.80
Gain (dB)
17.60
17.40
17.20
17.00
16.80
1805.00 1823.75 1842.50 1861.25 1880.00
Frequency (M H z)
Input P1dB versus Frequency and V
-2.20
-2.40
-2.60
-2.80
-3.00
-3.20
-3.40
-3.60
-3.80
-4.00
-4.20
-4.40
-4.60
-4.80
-5.00
-5.20
-5.40
Input P1dB (dBm)
-5.60
-5.80
-6.00
-6.20
-6.40
-6.60
-6.80
-7.00
-7.20
IP1dB, 2.8V
IP1dB, 3.0V
IP1dB, 3.2V
1805.00 1823.75 1842.50 1861.25 1880.00
(Temp = +25°C)
Frequency (M H z)
Gain, 2.8V
Gain, 3.0V
Gain, 3.2V
CC
Gain versus Frequency and Temp
(V
= 2.8 V, RF IN = -35 dBm)
19.20
19.00
18.80
18.60
18.40
18.20
18.00
17.80
17.60
17.40
Gain (dB)
17.20
17.00
16.80
16.60
16.40
16.20
16.00
1805.00 1823.75 1842.50 1861.25 1880.00
CC
Gain, -40°C
Gain, +25°C
Gain, +85°C
Frequency (M H z)
Input P1dB versus Frequency and Temp
(V
= 2.8 V)
-2.80
-3.00
-3.20
-3.40
-3.60
-3.80
-4.00
-4.20
-4.40
-4.60
-4.80
-5.00
-5.20
-5.40
-5.60
-5.80
-6.00
Input P1dB (dBm)
-6.20
-6.40
-6.60
-6.80
-7.00
-7.20
-7.40
-7.60
-7.80
-8.00
IP1dB, -40°C
IP1dB, +25°C
IP1dB, +85°C
1805.00 1823.75 1842.50 1861.25 1880.00
CC
Frequency (M H z)
4
AMPLIFIERS
GENERAL PURPOSE
IIP3 versus Frequency and V
7.50
7.00
6.50
6.00
5.50
5.00
4.50
4.00
3.50
IIP3 (dBm)
3.00
2.50
2.00
1.50
1.00
0.50
IIP3, 2.8V
IIP3, 3.0V
IIP3, 3.2V
1805.00 1823.75 1842.50 1861.25 1880.00
(Temp = +25°C)
Frequency (M H z)
Rev A4 001201
CC
6.00
5.50
5.00
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
IIP3 (dBm)
-0.50
-1.00
-1.50
-2.00
-2.50
-3.00
-3.50
-4.00
-4.50
1805.00 1823.75 1842.50 1861.25 1880.00
IIP3 versus Frequency and Temp
(V
= 2.8 V)
CC
IIP3, -40°C
IIP3, +25°C
IIP3, +85°C
Frequency (M H z)
4-221
Page 8
RF2365
4
GENERAL PURPOSE
AMPLIFIERS
ICC versus VCC and Temp
10.50
10.00
(mA)
CC
I
9.50
9.00
8.50
8.00
7.50
7.00
6.50
6.00
5.50
5.00
4.50
Icc, -40°C
Icc, +25°C
Icc, +85°C
2.80 3.00 3.20
V
CC
Input/Output Impedance @ 2.8 V
0.8
0.6
0.4
1.0-1.0
Noise Figure versus Frequency and V
1.34
1.33
1.32
1.31
Noise Figure (dB)
1.30
1.29
1.28
1805.00 1823.75 1842.50 1861.25 1880.00
(Temp = Amb i en t )
Frequency (M H z)
Swp Max
3.5GHz
2.0
3.0
CC
NF, 2.8V
NF, 3.0V
NF, 3.2V
4.0
5.0
S[1,1]
5.0
10.0
10.0
S[2,2]
-10.0
-5.0
-4.0
-3.0
Swp Min
0.1GHz
0.2
0
-0.2
-0.4
0.2
-0.6
0.4
0.6
-0.8
0.8
1.0
2.0
3.0
4.0
-2.0
4-222
Rev A4 001201
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