Datasheet RF2364, RF2364PCBA Datasheet (RF Micro Devices)

Preliminary

RF2364

4

Typical Applications

• CDMA PCS LNA

• TDMA PCS LNA

• W-CDMA/CDMA2000 LNA

Product Description

The RF2364 is a low noise amplifier with a high dynamic
range designed for CDMA and TDMA PCS, as well as
W-CDMA/CDMA2000 applications. The device functions
as an outstanding front end low noise amplifier and the
bias current can be set externally. The IC includes a
power down feature used to completely turn-off the
device and is featured in a standard SOT 5-lead plastic
package.

3V PCS LOW NOISE AMPLI FIER

• General Purpose Amplification

• Commercial and Consumer Systems

2.90

+0.10

3° MAX

0° MIN

+0.01

0.950

1.60

1

2.80

+0.20

0.400

0.127

0.15

0.05

1.44

1.04

Dimensions in mm.

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

1RF IN

2GND1

3VPD

Si CMOS

5

4GND2

RF OUT

0.45

+0.10

Package Style: SOT 5-Lead

Features

• Low Noise and High Intercept Point

•18dBGain

• Power Down Control

• Single 3.0V Power Supply

• PCS and W-CDMA Band Operation

• 1.8GHz to 2.5GHz Operation

Ordering Information

RF2364 3V PCS Low Noise Amplifier
RF2364 PCBA Fully Assembled EvaluationBoard

Functional Block Diagram

Rev A4 010501

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

4-209

RF2364

Absolute Maximum R atings

Parameter Rating Unit

Supply Voltage -0.5 to +8.0 V
Input RF Level +10 dBm

Storage Temperature -40 to +150 °C

DC

Preliminary

Caution! ESD sensitive device.

RF Micro Devices believes thefurnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

Parameter

Min. Typ. Max.

Specification

Unit Condition

Operating Range

Overall Frequency Range 1930 1990 MHz
Supply Voltage (V

Power Down Voltage(V

Current Consumption 17.0 23.5 mA V
Power Down Current 10 µAVCC=3.0V,VPD<0.9V
Operating Ambient Temperature -40 +85
Input Impedance 50 Ω

AMPLIFIERS

Output Impedance 50 Ω

GENERAL PURPOSE

Low Noise Amplifier

)2.73.03.3V

CC

) 2.7 2.9 V For normal operation

PD

0.9 V For power down operation

CC

o

C

T=25oC

=3.0V,Values reflect ICC+I

PD

Performance

Power Gain 18 21 dB V
Noise Figure 1.8 dB

Input IP3 +5 dBm V
Input VSWR 2:1

Output VSWR 2:1 With external matching components.
Input P1dB -8.5 dBm

=3.0V,ICC=17mA

CC

=3.0V

CC

4-210

Rev A4 010501

Preliminary

R

P

RF2364

Pin Function Description Interface Schematic

1RFIN

RF input pin. This pin is DC coupled and mat ched to 50Ω.

RF IN

To Bias

Circuit

FOUT

2GND1
3 VPD

4GND2
5RFOUT

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.

For low noise amplifier applications, this pin is used to control the bias
current. See plots for bias current settings. An external resistor (R1)
canbeusedtosetthebiascurrentforanyV

tion Note).
For driver amplifier applications, this is the Power Down pin for the IC.
V

the Part. External RF bypassing is required. The trace length between
the pin and the bypass capacitors should be minimized. The ground
side of the bypass capacitors should connect immediately to ground
plane. Nominal current required for V

3.0mA Max (@ V
Ground connection. Keep traces physically short and connect immedi-

ately to ground plane for best performance.
Amplifier Output pin. This pin is an open-collector output. It must be

biased to either V
This pin is typically matched to 50Ω with a shunt bias/matching induc-

tor and seriesblocking/matching capacitor. Referto application sche­matics.

voltage (See Applica-

PD

=2.8V+ 0.1V is required for proper operation. VPD<0.9V turns off

PD

=2.8V is 2.0mA typical and

=2.9V).

PD

or pin 4 through a choke or matching inductor.

CC

PD

D

4

AMPLIFIERS

GENERAL PURPOSE

Rev A4 010501

4-211

4

RF2364

Preliminary

Applicat ion Notes

Power Down Pin Resistor

The Power Down pin (pin 3) of the RF2364 3V Low Noise Amplifier should be maintained at 2.7V to 2.9V for proper
operation. This voltage range ensures the correct bias current will be present at the Power Down pin of the device. How­ever, an external series resistor may be used to allow various operating voltages at this pin (see R1 in ApplicationSche­matics). The required value for this resistor may be roughly calculated by using the operating input voltage to the Power
Down pin, the desired voltage at the device, and the typical current consumption for the Power Down pin, along with
Ohms law.

For example, assume the designwill supply 3.3 V to the Power Down pin of the device, but the biasing circuitry inter nal to
the RF2364 requires 2.8V, and the power down bias currentis known to typically be 5.5mA, then the required value from
R1 would be found from:

3.3V 2.8V–

---------------------------- -

5.5mA

AMPLIFIERS

GENERAL PURPOSE

90.9Ω=

4-212

Rev A4 010501

Preliminary

Application Schemati c

PCS Band

V

CC

10 nF

RF2364

VPD

RF IN

R1

Optional See

Application

Notes

RF IN

15 nF

1

2

8.2 nH
3

10 nF

Application Schemati c

W-CDMA Band

47 pF

1

2

4.7 nH

5

1.5 pF

4

3.3 nH

V

5

CC

4.7 nH

1.5 pF

10 nF

1pF

RF OUT

4

AMPLIFIERS

GENERAL PURPOSE

RF OUT

Rev A4 010501

VPD

R1

Optional See

Application

Notes

8.2 nH

10 nF

3

4

4-213

RF2364

Preliminary

Evaluation Board Schematic - PCS Band

(Download Bill of Materials from www.rfmd.com.)

4

P1

1

GND

P1-2 VCC

RF IN

VPD

2

J1

50 Ωµstrip

AMPLIFIERS

GENERAL PURPOSE

P2

1

GND

P2-2 VPD

2

C1

15 nF

1

2

L1

8.2 nH
3

C5

10 nF

2364400-

VCC

C2

10 nF

L2

4.7 nH

5

C3

1.5 pF

4

L3

3.3 nH

C4

1.5 pF

50 Ωµstrip

J2

RF OUT

4-214

Rev A4 010501

Preliminary

RF2364

Evaluation Board Layout

Board Size 1” x 1”

Board Thickness 0.031”; Board Material FR-4

4

AMPLIFIERS

GENERAL PURPOSE

Rev A4 010501

4-215

RF2364

Preliminary

4

Gainversus V

CC

VPD=2.8V, Frequency=1960MHz

19.00

18.50

18.00

17.50

17.00

Gain (dB)

16.50

16.00

15.50

15.00

2.7 2.8 2.9 3 3.1 3.2 3.3

Gain, -30º
Gain, 25º
Gain, 85º

VCC(V)

AMPLIFIERS

GENERAL PURPOSE

2.3

2.1

1.9

1.7

1.5

1.3

NF (dB)

1.1

0.9

0.7

0.5

2.7 2.8 2. 9 3 3.1 3.2 3.3

NoiseFigureversusV

VPD=2.8V, Frequency=1960MHz

CC

NF, -30º
NF,25º
NF,85º

VCC(V)

6.50

6.00

5.50

5.00

4.50

IIP3 (dBm)

4.00

3.50

3.00

2.7 2.8 2.9 3 3.1 3.2 3.3

-7.90

-8.00

-8.10

-8.20

-8.30

-8.40

-8.50

Input P1dB (dBm)

-8.60

-8.70

-8.80

-8.90

2.7 2.8 2.9 3 3.1 3.2 3.3

IIP3 versus V

CC

VPD=2.8V, Frequency=1960MHz

IIP3, -30º
IIP3, 25º
IIP3, 85º

VCC(V)

Input P1dB versus V

CC

VPD=2.8V, Frequency=1960MHz

VCC(V)

P1dB,-30º
P1dB,25º
P1dB,85º

4-216

ICCversusV

CC

VPD=2.8V, Frequency=1960MHz

9.20

9.00

8.80

8.60

8.40

(mA)

CC

I

8.20

8.00

7.80

7.60

2.7 2.8 2. 9 3 3.1 3.2 3.3

VCC(V)

Icc, -30º Icc,25º

Icc,85º

Gain versus V

PD

VCC=3.0V, Frequency=1960M Hz

19.00

18.50

18.00

17.50

17.00

Gain (dB)

16.50

16.00

15.50

2.7 2.75 2.8 2.85 2.9

Gain, -30º
Gain, 25º
Gain, 85º

VPD(V)

Rev A4 010501

Preliminary

RF2364

IIP3 versus V

PD

VCC=3.0V,Frequency=1960M H z

6.00

5.80

5.60

5.40

5.20

5.00

IIP3 (dBm)

4.80

4.60

4.40

4.20

4.00

2.7 2.75 2.8 2.85 2.9

VPD(V)

P1dB versus V

PD

VCC=3.0V, Frequency=1960M Hz

-7.40

-7.60

-7.80

-8.00

-8.20

-8.40

-8.60

Input P1dB (dBm)

-8.80

-9.00

-9.20

-9.40

2.7 2.75 2.8 2.85 2.9

P1dB, -30º
P1dB, 25º
P1dB, 85º

VPD(V)

IIP3, -30º
IIP3, 25º
IIP3, 85º

NoiseFigureversusV

PD

VCC=3.0V, Frequency=1960M Hz

2.20

2.00

1.80

1.60

NF (dB)

1.40

1.20

1.00

2.7 2.75 2.8 2.85 2.9

VPD(V)

IPDversus V

PD

VCC=3.0V, Frequency=1960MHz

6.00

5.80

5.60

5.40

5.20

5.00

(mA)

PD

I

4.80

4.60

4.40

4.20

4.00

2.7 2.75 2.8 2.85 2.9

VPD(V)

NF, -30º
NF,25º
NF,85º

4

AMPLIFIERS

GENERAL PURPOSE

Ipd,-30º
Ipd,25º
Ipd,85º

19.00

18.50

18.00

17.50

Gain (dB)

17.00

16.50

16.00

Rev A4 010501

Gain versus Frequency

V

=3.0V, VPD=2.8V

CC

Gain,-30º
Gain,25º
Gain,85º

1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

Input Impedance versus Frequency

V

=3.0V, VPD=2.8V

CC

1.85

1.8

1.75

1.7

Input VSWR

1.65

1.6

1.55
1930 1940 1950 1960 1970 1980 1990

S11, -30º
S11, 25º
S11, 85º

Frequency (MHz)

4-217

RF2364

Output Impedance versus Frequency

1.55

1.5

1.45

1.4

Output VSWR

V

=3.0V, VPD=2.8V

CC

Preliminary

S22,-30º
S22, 25º
S22, 85º

4

1.35

1.3
1930 1940 1950 1960 1970 1980 1990

Frequency (MHz)

AMPLIFIERS

GENERAL PURPOSE

4-218

Rev A4 010501