Page 1
Preliminary
RF2363
4
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
Product Description
The RF2363 is a dual-band Low Noise Amplifier
designed for use as a front-end for 950MHz GSM/
1850 MHz DCS applications and may be used for dualband cellular/PCS applications. The 900MHz LNA is a
single-stage amplifier; the 1900MHz LNA is a 2-stage
amplifier. The part may also be tuned for applications in
other frequency bands. The device has an excellent combination of low noise figure and high linearity at a very low
supply current. It is packaged in a very small industry
standard SOT 8-lead plastic package.
DUAL-BAND 3V LOW NOISE AMPLIFIER
• General Purpose Amplification
• Commercial and Consumer Systems
1.44
1.04
0.15
0.05
0.127
1.59
1.61
2.80
3.00
2.60
3.00
*When Pin 1 is in upper
left, text reads downward
(as shown).
TEXT*
3°MAX
0°MIN
0.365
0.650
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
RF OUT1
GND
RF OUT2
EN1
1
2
3
4
ü
SiGe HBT
Si CMOS
8
7
6
5
RF IN1
GND
RF IN2
EN2
Functional Block Diagram
0.35
0.55
Package Style: SOT, 8-Lead
Features
• Low Noise and High Intercept Point
•18dBGainat900MHz
•21dBGainat1900MHz
• Low Supply Current
• Single 2.5V to 5.0V Power Supply
• Very Small SOT-23-8 Plastic Package
Ordering Information
RF2363 Dual-Band 3V Low NoiseAmplifier
RF2363 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B2 010129
4-199
Page 2
RF2363
Absolute Maximum R atings
Parameter Rating Unit
Supply Voltage -0.5 to +6.0 V
Input RF Level +10 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
DC
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Specification
Unit Condition
Overall
RF Frequency Range 800 to 1000 MHz
1800 to 2000 MHz
950 MHz Performance
Gain 16 18 20 dB
Isolation 16 dB EN1=0V
Gain Step 34 dB Gain - Isolation
Noise Figure 1.3 dB
AMPLIFIERS
Output IP3 +17 +24 dBm
Input P1dB -10 dBm
Reverse Isolation 20 dB
Input VSWR 1.8:1 2:1 No external matchi n g
Output VSWR 1.8:1 2:1 With external match as per GSM/DCS Appli-
1850 MHz Performance
Gain 20 21.5 24 dB
Isolation 10 dB EN2=0V
Gain Step 31.5 dB Gain - Isolation
Noise Figure 1.4 dB
Output IP3 +16 +22 dBm
Input P1dB -12 dBm
Reverse Isolation 30 dB
Input VSWR 1.7:1 2:1 No external matchi n g
Output VSWR 1.7:1 2:1 With external match as per GSM/DCS Appli-
T= 25°C, RF=950MHz, VCC=2.8V,
EN1=2.8 V, EN2=0V
cation Schematic
T= 25°C, RF=1850MHz, VCC=2.8V,
EN2=2.8V,EN1=0V
cation Schematic
LNA Select
“Enable” Voltage V
“Disable” Voltage 0 V
CC
Power Supply
Voltage 2.8 V Specifications
2.5 to 5.0 V Operating limits
Current Consumption 5 mA 900MHz LNA Enabled, 1900MHz LNA Dis-
7.5 mA 1900MHz LNA Enabled, 900MHz LNA Dis1 µA EN1= EN2=0V
V
T=25°C
abled; total DC current
abled; total DC current
4-200
Rev B2 010129
Page 3
Preliminary
RF2363
Pin Function Description Interface Schematic
1RFOUT1
2GND
RF output pin for ~900MHz LNA. This pin is an open-collector output. It
must be biased to either V
inductor. It is typically matched to 50Ω with a shunt bias/matching
inductor and series blocking/matching capacitor. Refer to ap plication
schematics.
Ground connection.
NOTE: Ground traces on pins2 and 7 are equivalent to a small amount
of inductance (~0.75nH). The dimension s of these lines are as follows.
Pin 2: L=56mils, W=15mils, H=31mils
Pin 7: L=56mils, W=15mils, H=31mils
Dielectric is FR-4.
or pin 4 through a choke or matching
CC
RF IN1
Pin 7
To Bias
Circuits
RF OUT1
LNA2LNA1
Pin 2
3RFOUT2
4EN1
5EN2
6RFIN2
7GND
8RFIN1
RF output pin for ~1900MHz LNA. This pin is an open-collector output.
It must be biased to either V
inductor. It is typically matched to 50Ω with a shunt bias/matching
inductor and series blocking/matching capacitor. Refer to ap plication
schematics.
Enable pin for ~900MHz LNA . A voltage equal to the supply voltage
LNA. This pin should be disabled (0V) when the ~ 1900MHz LNA is in
use.
Enable pin for ~1900MHz LN A. A voltage equal to the supply voltage
LNA. This pin should be disabled (0V) when the ~900MHz LNA is in
use. See package drawing for description of pin orientation.
RF input pin for ~1900MHz. This pin is matched to approximately 50Ω
at DCS/PCS frequencies. AnexternalAC coupling capacitor is required
at this pin.
Same as pin 2. See pin 2.
RF input pin for~900MHz. This pin is matched to approximately 50Ω at
GSM/Cellular frequencies. An external AC coupling capacitor is
required at this pin.
or pin 4 through a choke or matching
CC
RF IN2
See pin 3.
See pin 3.
See pin 1.
EN2
RF OUT2
4
AMPLIFIERS
GENERAL PURPOSE
Rev B2 010129
4-201
Page 4
RF2363
Preliminary
RF2363 Theory of Operation and Application Information
4
The RF2363 contains two independent low noise
amplifiers which have been optimized for dual-band
applications in the GSM (905MHz to 960MHz) and
DCS (1805MHz to 1880 M Hz) frequency bands. Fabricated using heterojunction bipolar transistor (HBT)
technology, the RF2363 delivers high linear gain at a
very low noise figure and low power consumption.
Internal temperature compensation keeps the gain
tightly controlled over temperature extremes (typically
less than 1dB of gain variation from -40°C to +85°C at
2.8 V). A 50Ω input impedance allows the part to be
connected to standard receiver front end filters without
additional matching components.
MODE CONTROL
The RF2363 incorporates two enable pins (EN1 and
EN2) for biasing the desired LNA according to the table
AMPLIFIERS
below.
GENERAL PURPOSE
EN1 EN2 Mode
GND GND Power Down
GND VCC 1900MHz LNA On
VCC GND 900MHz LNA On
900MHz LNA
The 900MHz LNA is a single-stage, common emitter
amplifier. Since the input pin contains a DC bias, an AC
coupling capacitor is required at this pin. An external
bias inductor from the output pin (RF OUT1) to VCC
provides DC biasing for the amplifier transistor and
assists in matching the output impedance to the next
receiver stage. A capacitor having a good RF bypass
characteristic at the frequency of operation should be
placed as close as possible to the supply voltage side
of the bias inductor; a low frequency bypass capacitor
should also be included. The EN1 pin supplies VCC to
the bias circuits of the LNA and should also be effectively bypassed with both low and high frequency
capacitors.
1900MHz LNA
The 1900MHz LNA is implemented by two common
emitter stages in cascade. The first stage is biased
through an external inductor at the EN2 pin. This
inductor also acts as an interstage match; a resistor in
parallel with the inductor is recommended to 'de-Q' the
inductor, thus providing a broader band interstage
match. An external bias inductor from the output pin
(RF OUT2) to VCC provides DC biasing for the second
stage transistor and assists in matching the output
impedance to the next r eceiver stage. Low and high
frequency bypass capacitors should be used on the
supply side of both the EN2 and RF OUT2 bias inductors. An AC coupling capacitor is required at the RF
IN2 pin.
LAYOUT CONSIDERATIONS
To provide optimal balance of gain and linearity, a small
amount of inductance is required in the ground traces
of the PCB. The recommended inductance is between
0.5 and 1.0nH, with 0.75nH used on the Evaluation
Board. Depending on the application, more gain with
less linearity or more linearity with less gain may be
desired. Appropriate adjustment of the ground inductance can accomplish these objectives. Minimizing the
ground inductance will maximize the gain at the
expense of linearity while increasing the ground inductance will increase the linearity at the expense of gain.
It is important to remember that the pin 7 ground inductance affects the performance of both LNAs, while the
pin 2 ground inductance affects only the 1900MHz
LNA.
4-202
Rev B2 010129
Page 5
Preliminary
EN1
EN2
RF IN2
RF IN1
Application Sche matic (GSM/DCS)
100 pF10 nF
47 pF 10 nF
1k
3.9 nH47 pF10 nF
Ω
5
22 nF
6
7
22 nF
8 1
Note orientationof
package inthis schematic.
4
3
2
12 nH
100 pF 10 nF
3.3 nH
2pF
RF2363
V
CC
RF OUT2
1pF
4
RF OUT1
V
CC
AMPLIFIERS
GENERAL PURPOSE
Evaluation Board Schemati c
(Download Bill of Materials from www.rfmd.com.)
EN1
EN2
C12
10 nF
J3
RF IN2
J4
RF IN1
Notes:
Ground traceson pins 2 and 7 are equivalent to a small
amount ofinductance (-1 nH). The dimensions of these
lines areas follows.
Pin2:L=56mils,W=15mils,H=31mils
Pin7:L=56mils,W=15mils,H=31mils
Dielectric isFR-4
C11
47 pF
R1
1k
50Ωµstrip
50Ωµstrip
Ω
L1
3.9 nH
C1
22 nF
0.75 nH 0.75 nH
C2
22 nF
Note orientationof
package inthis schematic.
C9
10 nF
U1
5
6
7
8 1
C10
100 pF
4
3
2
L3
12 nH
P2
L2
3.3 nH
C5
2pF
C3
1
2
CON2
C7
47 pFC810 nF
C6
1pF
50Ωµstrip
VCC
P2-1
100 pFC410 nF
P1-1
VCC
GND
P1-3 EN1
P1-4 VCC
50Ωµstrip
P1
1
2
3
4
CON4
EN2
GND
VCC
J2
RF OUT2
J1
RF OUT1
Rev B2 010129
4-203
Page 6
4
GENERAL PURPOSE
AMPLIFIERS
RF2363
Preliminary
Evaluation Board Layout
Board Size 1.0" x 1.0"
Board Thickness 0.031”, Board Material FR-4
4-204
Rev B2 010129
Page 7
Preliminary
RF2363
Gain versus Frequency
19.0
18.8
18.6
18.4
18.2
Gain (dB)
18.0
17.8
17.6
925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0
900 MHz LNA
Frequency (MHz)
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
Noise Figure versus Frequency
900 MHz LNA
Frequency (MHz)
Noise Figure (dB)
1.5
1.4
1.3
1.2
1.1
1.0
2.8V
3.2V
925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0
Gain versus Frequency
23.0
22.5
22.0
21.5
Gain (dB)
21.0
20.5
20.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
1900 MHz LNA
Frequency(MHz)
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
Noise Figure versus Frequency
2.0
2.8V
3.2V
1.9
1.8
1.7
1.6
1.5
1.4
Noise Figure (dB)
1.3
1.2
1.1
1.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
1900 MHz LNA
Frequency(MHz)
4
AMPLIFIERS
GENERAL PURPOSE
Input 1 dB Compression Point versus Frequency
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-6.0
-7.0
-8.0
-9.0
-10.0
-11.0
-12.0
Input Power at 1 dB Compression (dBm)
-13.0
-14.0
-15.0
925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0
Rev B2 010129
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
900 MHz LNA
Frequency(MHz)
Input 1 dB Compression Point versus Frequency
1900 MHz LNA
Frequency (MHz)
-10.0
-11.0
-12.0
-13.0
-14.0
-15.0
-16.0
Input Power at 1 dB Compression (dBm)
-17.0
-18.0
-6.0
-7.0
-8.0
-9.0
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
4-205
Page 8
RF2363
Preliminary
4
GENERAL PURPOSE
AMPLIFIERS
Output3rd OrderIntercept Point versus Frequency
32.0
31.0
30.0
29.0
28.0
27.0
26.0
25.0
24.0
OIP3 (dBm)
23.0
22.0
21.0
20.0
19.0
18.0
925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0
900 MHz LNA
Frequency (MHz)
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
Current versus Supply Voltage
900 MHz LNA
Supply Voltage (VDC)
Current (mA)
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
900 LNA,-40°C
900 LNA,+25°C
900 LNA,+85°C
2.52.72.93.13.33.5
Output3rd OrderIntercept Point versus Frequency
30.0
29.0
28.0
27.0
26.0
25.0
24.0
23.0
22.0
OIP3 (dBm)
21.0
20.0
19.0
18.0
17.0
16.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
1900 MHz LNA
Frequency(MHz)
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
Current versus Supply Voltage
14.0
13.0
12.0
11.0
10.0
Current (mA)
1900 LNA, -40°C
1900 LNA, +25°C
1900 LNA, +85°C
9.0
8.0
7.0
6.0
5.0
4.0
2.5 2.7 2.9 3.1 3.3 3.5
1900 MHz LNA
Supply Voltage (VDC)
4-206
Rev B2 010129
Page 9
Preliminary
Input impedance
Output impedance
RF2363
900MHz LNA
8
1.0-1.0
.
0
6
.
0
4
.
0
2
.
0
950 MHz
Swp Max
2.5GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
Input impedance
Output impedance
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
0.6
8
.
0
-
1.0
0.8
950 MHz
2.0
3.0
4.0
0.5 MHz
0
.
2
-
5.0
10.0
0
.
4
0
.
3
-
Swp Min
0.5GHz
0
.
0
1
-
0
.
5
-
-
4
AMPLIFIERS
GENERAL PURPOSE
1900MHz LNA
0
.
2
5.0
4.0
0.5 MHz
0
.
2
-
Swp Max
2.5GHz
0
.
3
0
.
4
10.0
0
.
0
.
3
-
Swp Min
0.5GHz
0
.
5
0
.
0
1
0
.
0
1
-
0
.
5
-
4
-
8
1.0-1.0
.
0
6
.
0
4
.
0
2
.
0
0
0.2
2
.
-0
4
.
0
-
1850 MHz 1850 MHz
0.4
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
3.0
Rev B2 010129
4-207
Page 10
4
GENERAL PURPOSE
AMPLIFIERS
RF2363
Preliminary
4-208
Rev B2 010129
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