Page 1
RF2362
4
Typical Applications
• TDMA/CDMA/FM PCS Tx Amplifier
• Low Noise Transmit Driver Amplifier
• 2.4GHz WLAN Systems
Product Description
The RF2362 is a low noise CDMA/TDMA PAdriveramplifier with a very high dynamic range designed for transmit
digital PCS applications at 1880MHz. The device functions as an outstanding PA driver amplifier in the transmit
chain of digital subscriber units where low transmit noise
power is a concern. The IC includes a power down feature that can be used to completely turn off the device.
The IC is featured in a standard SOT 5-lead plastic package.
PCS CDMA/TDMA 3V
PA DRIVER AMPLIFIER
• General Purpose Amplification
• Commercial and Consumer Systems
2.90
+0.10
3° MAX
0° MIN
+0.01
0.950
1.60
1
2.80
+0.20
0.400
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
RF IN
GND1
VPD RF O UT
ü
SiGe HBT
1
2
3
Si CMOS
5
GND2
4
0.45
+0.10
Package Style: SOT 5-Lead Package
Features
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
• Single 2.5V to 6.0V Power Supply
• 150MHz to 2500MHz Operation
• Extremely Small SOT23-5 Package
Ordering Information
RF2362 PCS CDMA/TDMA 3V PA Driver Amplifier
RF2362 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
Rev A4 010720
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
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RF2362
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +8.0 V
Input RF Level +10 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
DC
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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GENERAL PURPOSE
Parameter
Min. Typ. Max.
Specification
Unit Condition
Overall
RF Frequency Range 150 to 2500 MHz
1880 MHz Performance
Gain 19 20.1 21.5 dB V
19 20.1 21.5 dB V
19 20.1 21.5 dB V
Output IP3 +24 +25.5 +35 dBm V
AMPLIFIERS
+25.0 dBm V
+24.5 dBm V
Noise Figure 2.2 2.5 dB V
2.2 2.5 dB VCC=3.0V
2.2 2.5 dB V
Reverse Isolation 32 dB V
32 dB V
32 dB V
Input VSWR 1.8:1 2.0:1
Output VSWR 1.6:1 2.0:1 Using Exter nal LC network used on Evalua-
P
1dB
14 14.5 dBm VCC=3.5V
12.5 14 dBm V
11 13.5 dBm V
Power Supply
Voltage (V
Voltage (V
Current Consumption 24 35 43 mA V
- Power Down 10 µΑ VCC=3.5V; VPD≤0.9V
) 2.5 to 6.0 V
CC
)2.72.82.9V
PD
24 32 38 mA V
29 37 43 mA VCC=2.7V; VPD=2.9V; VPD+V
Schematic per Evaluation Board, T= 25°C,
RF=1880MHz, V
=3.5V
CC
=3.0V
CC
=2.7V
CC
=3.5V
CC
=3.0V
CC
=2.7V
CC
=3.5V
CC
=2.7V
CC
=3.5V
CC
=3.0V
CC
=2.7V
CC
PD
=2.8V
tion Board
=3.0V
CC
=2.7V
CC
T=25°C
=3.5V; VPD=2.8V; VPD+VCC- Current
CC
Consumption from V
V
= 2.8V and 12 mA Ma x @ VPD=2.9V
PD
=3.0V; VPD=2.7V; VPD+V
CC
is 8.5 mA Typ. @
PD
CC
CC
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Rev A4 010720
Page 3
RF2362
Pin Function Description Interface Schematic
1RFIN
RF input pin. This pin is DC-coupled and matched to 50Ω at 1880MHz.
PD
2GND1
3 VPD
4RFOUT
5GND2
Ground connection. For best performance, keep traces physically short
and connect immed iately to ground plane.
PowerDownfortheIC.VPD=2.8V +/- 0.1V turns on the part.
V
trace length between the pin and the bypass capacitors should be min-
imized. The ground side of the bypass capacitors should connect
immediately to ground plane. Nominal current required for V
is 8.5 mA typical and 12 mA Max (@V
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
This pin is ty p ically matched to 50Ω with a shunt bias/matching inductor and series blocking/matchingcapacitor. Refer to application schematics.
Ground connection. For best performance, keep traces physically short
and connect immed iately to ground plane.
<0.9V turns off the part. External RF bypassing is required. The
PD
=2.9 V).
PD
or pin 4 through a choke or matching inductor.
CC
PD
=2.8V
RF IN
PD
TO OUTPUT
STAGE
4
AMPLIFIERS
GENERAL PURPOSE
Rev A4 010720
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Page 4
RF2362
~1880 MHz Operation, Internal Collector Bias
Application Schematic:
4
GENERAL PURPOSE
AMPLIFIERS
J1
RF IN
VPD
10 pF
R1
0 Ω
1
2
3
220 pF10 nF
5
4
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
1pF
4.7 nH
220 pF 10 nF
P1-1 VPD
C7
4.7 µF
P1
1
2
3
J2
RF OUT
VCC
GND
VCC
J1
RF IN
VPD
50 Ωµstrip
R1
0 Ω
C1
10 nF
C3
4pF
C2
220 pF
1
2
3
2362400-
5
C4
50 Ωµstrip
4
L1
4.7 nH
1pF
C5
220 pFC610 nF
50 Ωµstrip
J2
RF OUT
VCC
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Rev A4 010720
Page 5
Evaluation Board Layout
Board Size 1” x 1”
Board Thickness 0.014”; Board Mater ial FR-4
RF2362
4
AMPLIFIERS
GENERAL PURPOSE
Rev A4 010720
4-197
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RF2362
4
GENERAL PURPOSE
AMPLIFIERS
ICCversus V
2.7VIcc(mA)
3.0VIcc(mA)
3.3VIcc(mA)
3.6VIcc(mA)
(Averaged)
43.0
42.0
41.0
40.0
39.0
38.0
37.0
36.0
(mA)
35.0
CC
I
34.0
33.0
32.0
31.0
30.0
29.0
28.0
2.72.82.93.0
OIP3 versus V
26.5
26.0
25.5
2.7VOIP3 (dBm)
3.0VOIP3 (dBm)
3.3VOIP3 (dBm)
3.6VOIP3 (dBm)
(Averaged)
PD
V
PD
PD
Gain versus V
19.80
19.75
19.70
19.65
19.60
19.55
19.50
19.45
19.40
19.35
Gain (dB)
19.30
19.25
19.20
19.15
19.10
19.05
19.00
2.70 2.80 2.90 3.00
2.7V Gain (dBm)
3.0V Gain (dBm)
3.3V Gain (dBm)
3.6V Gain (dBm)
(Averaged)
P1dB versus V
16.0
15.5
15.0
2.7V P1dB (dBm)
3.0V P1dB (dBm)
3.3V P 1dB(dBm)
3.6V P 1dB(dBm)
(Averaged)
PD
V
PD
PD
25.0
OIP3 (dBm)
24.5
24.0
23.5
2.7 2.8 2.9 3.0
Noise Figure versus V
2.25
2.24
2.23
2.22
2.21
2.20
2.19
Noise Figure (dB)
2.18
2.17
2.16
2.15
2.70 2.80 2.90 3.00
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
V
PD
PD
V
PD
14.5
P1dB (dBm)
14.0
13.5
13.0
2.7 2.8 2.9 3.0
V
PD
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Rev A4 010720
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