The RF2361 is a low noise amplifier with a very high
dynamic range designed for digital cellular applications.
The device functions as an outstanding front end low
noise amplifier or power amplifier driver amplifier in the
transmit chain of digital subscriber units where low transmit noise power is a concern. When used as an LNA, the
bias current can be set externally. When used as a PA
driver, the IC can operate directly from a single cell Li-ion
battery and includes a power down feature that can be
used to completely turn off the device. The IC is featured
in a standard SOT 5-lead plastic package.
3V LOW NOISE AMPLIFIER/
3V PA DRIVER AMPLIFIER
• General Purpose Amplificatio n
• Commercial and Consumer Systems
2.90
+ 0.10
3° MAX
0° MIN
+ 0.01
0.950
1.60
1
2.80
+ 0.20
0.45
+ 0.10
0.400
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJTGaAs MESFETGaAs HBT
Si Bi-CMOS
!
SiGe HBT
1RF IN
2GND1
3VPD
Si CMOS
5 GND2
4 RF OUT
Functional Block Diagram
Package Style: SOT 5-Lead
Features
• Low Noise and High I ntercept Point
• Adjustabl e Bias Current
• Power Down Control
• Single 2.5V to 6.0V Power Supply
• 150MHz to 2500MHz Operation
• Extremely Small SO T 5-Lead Package
Ordering Information
RF23613V Low Noise Amplifier/ 3V PA Driver Amplifier
RF2361 PCBA-D Fully Assembled Evaluat ion Boa rd (D river)
RF2361 PCBA-L Fully Assembled Evaluat ion Boa rd (LN A)
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A7 001201
4-183
Page 2
RF2361
Absolute Maximum Ratings
ParameterRatingUnit
Supply Voltage, V
Power Down Voltage, V
CC
PD
Input RF Level+10dBm
Operating Ambient Temperature-40 to +85°C
Storage Temperature-40 to +150°C
-0.5 to +8.0V
<V
CC
DC
V
DC
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printi ng. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min.Typ.Max.
Specification
UnitCondition
Overall
RF Frequency Range150 to 2500MHz
Low Noise Amplifier
881MHz Performance
Gain19.520dBV
19.520dBV
Noise Figure1.41.6dBV
AMPLIFIERS
1.41.6dBV
Input IP3+6.0dBmV
+5.5dBmV
Low Noise Amplifier
1950MHz Performance
Gain12.513dBV
12.513dBV
Noise Figure1.31.5dBV
1.31.5dBV
Input IP3+16.5dBmV
+16.0dBmV
Driver Amplifier
836MHz Performance
Gain19.520.521.5dBV
19.520.521.5dBV
19.520.521.5dBV
Output IP325+32.035dBmVCC=3.5V
+29.0dBmV
+27.8dBmV
Noise Figure1.92.0dBV
1.852.0dBV
1.82.0dBV
Reverse Isolation25dBV
25dBV
25dBVCC=2.7V
Input VSWR1.8:12.0:1
Output VSWR1.25:1 2.0:1Using Externa l LC network used on evalua-
P
1dB
1314.4dBmVCC=3.5V
1212.5dBmV
10.511.5dBmV
Schematic per LNA Application;
T=25°C, RF=881MHz, V
PD
=2.8V,
R1=1k Ω
=3.0V, ICC=7.6mA
CC
=2.7V, ICC=7.5mA
CC
=3.0V, ICC=7.6mA
CC
=2.7V, ICC=7.5mA
CC
=3.0V, ICC=7.6mA
CC
=2.7V, ICC=7.5mA
CC
Schematic per LNA Application;
T=25°C, RF=1950MHz, V
PD
R1=1k Ω
=3.0V, ICC=6.4mA
CC
=2.7V, ICC=6.3mA
CC
=3.0V, ICC=6.4mA
CC
=2.7V, ICC=6.3mA
CC
=3.0V, ICC=6.4mA
CC
=2.7V, ICC=6.3mA
CC
Schematic per Driver Amplifier Application;
T=25°C, RF=836MHz, V
=3.5V
CC
=3.0V
CC
=2.7V
CC
=3.0V
CC
=2.7V
CC
=3.5V
CC
=3.0V
CC
=2.7V
CC
=3.5V
CC
=3.0V
CC
PD
=2.8V
tion board.
=3.0V
CC
=2.7V
CC
=2.8V,
4-184
Rev A7 001201
Page 3
RF2361
Parameter
Po wer Supply
Voltage (V
)2.5 to 6.0V
CC
Min.Typ.Max.
Specification
UnitCondition
T = 25 °C
Voltage (VPD)2.72.82.9V
Current Consumption -
Driver Amplifier
12.521.527mAV
182022mAV
192329mAVCC=3.5V; VPD=2.9V; VPD+ V
=3.5V; VPD=2.8V; VPD+VCC - Current
CC
Consumption from V
V
=2.8V and 3.0mA Max @ VPD=2.9V
PD
=3.5V; VPD=2.7V; VPD+ V
CC
is 2.0mA Typ. @
PD
CC
CC
Power Down 10µAVCC=3.5V; VPD ≤ 0.9V
Driver Amplifier
1880MHz Performance
Gain13.014.014.5dBV
Schematic per Driver Amplifier Application;
T=25°C, RF=1880MHz, V
Input VSWR1.6:12.0:1
Output VSWR1.6:12.0:1Using External LC network used on evalua-
tion board.
P
1dB
Po wer Supply
Voltage (V
Voltage (V
Current Consumption -
Driver Amplifier
)2.5 to 6.0V
CC
)2.72.82.9V
PD
1415.6dBmVCC=3.5V
1314.1dBmV
1213.1dBmV
CC
CC
=3.0V
=2.7V
T = 25 °C
11.519.525.5mAVCC=3.5V; VPD=2.8V; VPD+VCC - Current
Consumption from V
V
=2.8V and 3.0mA Max @ VPD=2.9V
PD
161820mAV
=3.5V; VPD=2.7V; VPD+ V
CC
1820.527mAVCC=3.5V; VPD=2.9V; VPD+ V
is 2.0mA Typ.@
PD
CC
CC
Power Down 10µAVCC=3.5V; VPD ≤ 0.9V
4
AMPLIFIERS
GENERAL PURPOSE
Rev A7 001201
4-185
Page 4
RF2361
PinFunctionDescriptionInterface Schematic
1RF IN
RF input pin. This pin is DC coupled and matched to 50Ω at 836MHz.
RF IN
To Bias
Circuit
RF OUT
4
GENERAL PURPOSE
AMPLIFIERS
2GND1
3VPD
4RF OUT
5GND2
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
For low noise amplifier applications, this pin is used to control the bias
current. See plots for bias current settings. An exter nal resistor (R1)
can be used to set the bias current for any V
For driver amplifier applications, this is the Power Down pin for the IC.
V
off the Part. External RF bypassing is required. The trace length
between the pin and the bypass capacitors should be minimized. The
ground side of the bypass capacitors should connect immediately to
ground plane. Nominal current required for V
and 3.0mA Max (@ V
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
This pin is typically matched to 50 Ω with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application schematics.
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
voltage.
PD
=2.8V +/- 0.1V is required for proper operation. VPD<0.9V turns
PD
=2.8V is 2.0mA typical
=2.9V).
PD
or pin 4 through a choke or matching inductor.
CC
PD
PD
4-186
Rev A7 001201
Page 5
Application Schematic:
Low Noise Amplifier ~881MHz Operation
RF2361
J1
RF IN
VPD
J1
RF IN
VPD
22 nF
1k
1
2
Ω
100 pF10 nF
3
5
2 pF
4
12 nH
Application Schematic:
Low Noise Amplifier ~1950MHz Operation
22 nF
1k
1
2
Ω
100 pF10 nF
3
5
1 pF
4
3.3 nH
RF OUT
VCC
100 pF10 nF
RF OUT
VCC
100 pF10 nF
J2
4
AMPLIFIERS
GENERAL PURPOSE
J2
Rev A7 001201
4-187
Page 6
RF2361
Application Schematic:
Driver Amplifier ~836MHz Operation
4
GENERAL PURPOSE
AMPLIFIERS
J1
RF IN
VPD
J1
RF IN
VPD
22 nF
1
2
Ω
0
100 pF10 nF
3
5
2 pF
4
12 nH
100 pF10 nF
J2
RF OUT
VCC
Application Schematic:
Driver Amplifier ~1880MHz Operation
22 nF
1
2
0
Ω
100 pF10 nF
3
5
1 pF
4
3.3 nH
100 pF10 nF
J2
RF OUT
VCC
4-188
Rev A7 001201
Page 7
Evaluation Board Schematic:
Low Noise Amplifier ~881MHz Operation
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1VPD
1
GND
2
VCC
3
µ
F
4.7
C7
RF2361
J1
RF IN
VPD
50 Ω µstrip
R1
1k
C3
22 nF
Ω
C1
10 nF
C2
220 pF
1
2
3
5
4
2361410 Rev-
50 Ω µstrip
L1
12 nH
C4
2 pF
C5
220 pFC610 nF
50 Ω µstrip
J2
RF OUT
VCC
4
AMPLIFIERS
GENERAL PURPOSE
Evaluation Board Schematic:
Driver Amplifie r ~836MHz Operation
P1
1
P1-1VPD
GND
2
VCC
3
C7
4.7
F
µ
J1
RF IN
VPD
50 Ω µstrip
Rev A7 001201
C3
22 nF
R1
0
Ω
C1
10 nF
C2
220 pF
1
2
3
5
4
2361400 Rev-
50 Ω µstrip
L1
12 nH
C4
2 pF
C5
220 pFC610 nF
50 Ω µstrip
J2
RF OUT
VCC
4-189
Page 8
4
RF2361
Evaluation Board Layout - 900MHz Driver
Board Size 0.948” x 1.063”
Board Thickness 0.031”; Board Material FR-4
GENERAL PURPOSE
AMPLIFIERS
Evaluation Board Layout - 900MHz LNA
4-190
Rev A7 001201
Page 9
RF2361
Driver A m p 836 MHz
I
versus V
2.7V Icc (mA)
3.0V Icc (mA)
3.3V Icc (mA)
3.6V Icc (mA)
CC
26.0
25.5
25.0
24.5
24.0
23.5
23.0
22.5
(mA)
CC
I
22.0
21.5
21.0
20.5
20.0
19.5
19.0
2.72.82.93.0
PD
V
PD
Driver A m p 836 MHz
33.0
32.0
31.0
OIP3 versus V
PD
2.7V OIP3 (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
Driver A m p 836 MHz
20.92
20.90
20.88
20.86
20.84
20.82
Gain (dB)
20.80
20.78
20.76
20.74
20.72
2.702.802.903.00
Gain versus V
2.7V Gain (dB)
3.0V Gain (dB)
3.3V Gain (dB)
3.6V Gain (dB)
PD
V
PD
Driver A m p 836 MHz
P
1dB versus V
15.0
14.5
14.0
13.5
2.7V P 1dB ( d Bm )
3.0V P 1dB ( d Bm )
3.3V P 1dB ( d Bm )
3.6V P 1dB ( d Bm )
OUT
PD
4
AMPLIFIERS
GENERAL PURPOSE
30.0
OIP3 (dBm)
29.0
28.0
27.0
2.72.82.93.0
V
PD
Driver A m p 836 MHz
2.05
2.00
1.95
1.90
NF (dB)
1.85
1.80
1.75
Noise Figure versus V
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
PD
13.0
1dB (dBm)
OUT
12.5
P
12.0
11.5
11.0
2.72.82.93.0
V
PD
1.70
2.702.802.903.00
Rev A7 001201
V
PD
4-191
Page 10
RF2361
4
GENERAL PURPOSE
AMPLIFIERS
Low Noise Amplifier 881 MHz
19.95
19.90
19.85
19.80
19.75
Gain versus I
2.7V Gain (dB)
3.0V Gain (dB)
3.3V Gain (dB)
3.6V Gain (dB)
Gain (dB)
19.70
19.65
19.60
19.55
6.006.507.007.508.008.509.009.5010.00
CC
I
CC
Low Noise Amplifier 881 MHz
9.0
8.5
8.0
7.5
7.0
6.5
IIP3 (dBm)
6.0
5.5
5.0
4.5
4.0
6.06.57.07.58.08.59.09.510.0
IIP3 versus I
2.7V IIP3 (dBm)
3.0V IIP3 (dBm)
3.3V IIP3 (dBm)
3.6V IIP3 (dBm)
CC
ICC (mA)
Low Noise Amplifier 881 MHz
29.0
28.5
28.0
27.5
27.0
26.5
OIP3 (dBm)
26.0
25.5
25.0
24.5
24.0
6.06.57.07.58.08.59.09.510.0
OIP3 versus I
2.7V OIP3 (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
CC
ICC (mA)
Low Noise Amplifier 881 MHz
P
1dB versus I
13.5
13.0
12.5
12.0
11.5
1dB (dBm)
OUT
11.0
P
10.5
10.0
9.5
6.06.57.07.58.08.59.09.510.0
OUT
2.7V Pout 1 dB ( d Bm )
3.0V Pout 1 dB ( d Bm )
3.3V Pout 1 dB ( d Bm )
3.6V Pout 1 dB ( d Bm )
ICC (mA)
CC
NF (dB)
4-192
Low Noise Amplifier 881 MHz
1.42
1.41
1.40
1.39
1.38
1.37
1.36
1.35
1.34
1.33
6.006.507.007.508.008.509.009.5010.00
Noise Figure versus I
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
I
CC
CC
Rev A7 001201
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