Datasheet RF2335, RF2335PCBA Datasheet (RF Micro Devices)

RF2335

4

Typical Applications

• Broadband, Low Nois e Gain Blocks

• IF or RF Buffer Amplifiers

• Driver Stage for Power Amplifiers

Product Description

The RF2335 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro­cess, and has been designed for use as an easily-cas­cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000M Hz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2335 is avail­able in a very small industry-standard SOT23 5-lead sur­face mount package, enabling compact designs which
conserve board space.

GENERAL PURPOSE AMPLIFIER

• Final PA for Low Power Applic ations

• Broadband Test Equipment

2.90

+ 0.10

3° MAX

0° MIN

1.60

+ 0.01

0.400

1

0.950

2.80

+ 0.20

0.127

0.45

+ 0.10

0.15

0.05

1.44

1.04

Dimensions in mm.

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

GND

GND

RF IN

1

2

3

!

SiGe HBT

Si CMOS

54RF OUT

GND

Functional Block Diagram

Package Style: SOT 5 Lead

Features

• DC to 6000MHz Opera ti on

• Internally matched Input and Output

• 12dB Small Signal Gain

• +33dBm Output IP3

• +17dBm Output Power

• Good Gain Flatness

Ordering Information

RF2335 General Purpose Amplifier
RF2335 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A4 001201

4-147

RF2335

Absolute Maximum Ratings

Parameter Rating Unit

Supply Current 120 mA
Input RF Power +20 dBm
Operating Ambient Temperature -40 to +70 °C
Storage Temperature -60 to +150 °C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

GENERAL PURPOSE

Parameter

Min. Typ. Max.

Overall

Frequency Range DC to 6000 MHz
3dB Bandwidth 3 GHz
Gain 13.7 dB Freq=100MHz

AMPLIFIERS

Gain Flatness ±1 dB 100MHz to 2000MHz
Noise Figure 5.6 dB Freq=1000MHz
Input VSWR 1.8:1 In a 50Ω system, DC to 2000MHz
Output VSWR 1.7:1 In a 50Ω system, DC to 2000MHz
Output IP

Output P
Reverse Isolation 17.2 dB Freq=2000MHz

3

1dB

Power Supply

Device Operating Voltage 5.0 V At pin 5 with I
Operating Current 65 mA

Specification

13.1 dB Freq=1000MHz

12.4 dB Freq=2000MHz
11 dB Freq=3000MHz

10.6 dB Freq=4000MHz
10 dB Freq=5000MHz

9.8 dB Freq=6000MHz

+33 dBm Freq=1000MHz±50kHz, P

+17.3 dBm Freq=1000MHz

Unit Condition

T=25°C, ICC=65mA

With 22Ω bias resistor

CC

=65mA

TONE

=-10dBm

4-148

Rev A4 001201

RF2335

Pin Funct ion Description Interface Schematic

1GND
2GND

3RF IN

4GND
5RF OUT

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.

Same as pin 1.
RF input pin. This pin is N OT internally DC blocked. A DC blocking

capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil­ity.

Same as pin 1.
RF output and bias pin. Biasing is accomplished with an external series

resistor and choke inductor to V
DC current into this pin to a desired level. The resistor value is deter-

mined by the following equation:

------------------------------------------------------ -

=

R

Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 120 mA over the planned oper­ating temperature. This means that a resistor between the supply and

this pin is always required, even if a supply near 5.0V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in mos t applications. The supply side of
the bias network should also be well bypassed.

. The resistor is selected to set the

CC

V

SUPPLYVDEVICE

–()

I

CC

RF IN

RF OUT

4

AMPLIFIERS

GENERAL PURPOSE

P1

P1-1 VCC

J1

RF IN

1
2
3

50 Ω µstrip

Evaluation Board Schemati c

(Download Bill of Materials from www.rfmd.com.)

R1

GND
NC

C1

100 pF

1

2

3

22 Ω

100 nH

5

100 pF

4

233X410-

L1

C2

C3

100 pFC41 µF

50 Ω µstrip

VCC
P1-1

J2

RF OUT

Rev A4 001201

4-149

4

RF2335

Evaluation Board Layout

Board Size 1” x 1”

AMPLIFIERS

GENERAL PURPOSE

4-150

Rev A4 001201