Datasheet RF2334, RF2334PCBA Datasheet (RF Micro Devices)

RF2334

4

Typical Applications

• Broadband, Low Nois e Gain Blocks

• IF or RF Buffer Amplifiers

• Driver Stage for Power Amplifiers

Product Description

The RF2334 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro­cess, and has been designed for use as an easily-cas­cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 4000M Hz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2334 is avail­able in a very small industry-standard SOT23 5-lead sur­face mount package, enabling compact designs which
conserve board space.

GENERAL PURPOSE AMPLIFIER

• Final PA for Low Power Applic ations

• Broadband Test Equipment

2.90

+ 0.10

3° MAX

0° MIN

1.60

+ 0.01

0.400

1

0.950

2.80

+ 0.20

0.127

0.45

+ 0.10

0.15

0.05

1.44

1.04

Dimensions in mm.

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

GND

GND

RF IN

1

2

3

!

SiGe HBT

Si CMOS

54RF OUT

GND

Functional Block Diagram

Package Style: SOT 5 Lead

Features

• DC to 4000MHz Opera ti on

• Internally matched Input and Output

• 16dB Small Signal Gain

• 5dB Noise Figure

• 50mW Linear Output Power

• Single Positive Power Supply

Ordering Information

RF2334 General Purpose Amplifier
RF2334 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A4 001201

4-143

RF2334

Absolute Maximum Ratings

Parameter Rating Unit

Supply Current 120 mA
Input RF Power +13 dBm
Operating Ambient Temperature -40 to +75 °C
Storage Temperature -60 to +150 °C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

GENERAL PURPOSE

Parameter

Min. Typ. Max.

Overall

Frequency Range DC to 4000 MHz
3dB Bandwidth 2.5 GHz
Gain 19.4 dB Freq=100MHz

Gain Flatness ±2 dB 100MHz to 2000MHz

AMPLIFIERS

Noise Figure 4.8 dB Freq=2000MHz
Input VSWR 2.1:1 In a 50Ω system, DC to 4000MHz
Output VSWR 1.8:1 In a 50Ω system, DC to 4000MHz
Output IP

Output P
Reverse Isolation 20.5 dB Freq=2000MHz

3

1dB

Power Supply

Device Operating Voltage 4.8 V At pin 5 with I
Operating Current 65 mA

Specification

18 dB Freq=1000MHz
16 dB Freq=2000MHz
14 dB Freq=3000MHz
13 Freq=4000MHz

+33 dBm Freq=1000MHz±50kHz, P

+18.5 dBm Freq=1000MHz

Unit Condition

T=25°C, ICC=65mA

With 22Ω bias resistor

CC

=65mA

TONE

=-10dBm

4-144

Rev A4 001201

RF2334

Pin Funct ion Description Interface Schematic

1GND
2GND

3RF IN

4GND
5RF OUT

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.

Same as pin 1.
RF input pin. This pin is N OT internally DC blocked. A DC blocking

capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil­ity.

Same as pin 1.
RF output and bias pin. Biasing is accomplished with an external series

resistor and choke inductor to V
DC current into this pin to a desired level. The resistor value is deter-

mined by the following equation:

------------------------------------------------------ -

=

R

Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 120 mA over the planned oper­ating temperature. This means that a resistor between the supply and

this pin is always required, even if a supply near 4.9V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in mos t applications. The supply side of
the bias network should also be well bypassed.

. The resistor is selected to set the

CC

V

SUPPLYVDEVICE

–()

I

CC

RF IN

RF OUT

4

AMPLIFIERS

GENERAL PURPOSE

P1

P1-1 VCC

J1

RF IN

1
2
3

50 Ω µstrip

Evaluation Board Schemati c

(Download Bill of Materials from www.rfmd.com.)

R1

GND
NC

C1

100 pF

1

2

3

22 Ω

100 nH

5

100 pF

4

233X410-

L1

C2

C3

100 pFC41 µF

50 Ω µstrip

VCC
P1-1

J2

RF OUT

Rev A4 001201

4-145

4

RF2334

Evaluation Board Layout

Board Size 1” x 1”

AMPLIFIERS

GENERAL PURPOSE

4-146

Rev A4 001201