Page 1
RF2333
4
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
Product Description
The RF2333 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2333 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which
conserve board space.
GENERAL PURPOSE AMPLIFIER
• Final PA for Low Power Applications
• Broadband Test Equipment
2.90
+ 0.10
3° MAX
0° MIN
+ 0.01
0.950
1.60
1
2.80
+ 0.20
0.400
0.127
0.45
+ 0.10
0.15
0.05
1.44
1.04
Dimensions in mm.
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
GND
GND
RF IN
1
2
3
ü
SiGe HBT
Si CMOS
54RF OUT
GND
Functional Block Diagram
Package Style: SOT 5 Lead
Features
• DC to 6000MHz Operation
• Internally matched Input and Output
• 10dB Small Signal Gain
• +34dBm Output IP3
• +18.5 dBm Output Power
• Good Gain Flatness
Ordering Information
RF2333 General Purpose Amplifier
RF2333 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 010228
4-137
Page 2
RF2333
Absolute Maximum Ratings
Parameter Rating Unit
Supply Current 120 mA
Input RF Power +20 dBm
Operating Ambient Temperature -40 to +65 °C
Storage Temperature -60 to +150 °C
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Overall
Frequency Range DC to 6000 MHz
3dB Bandwidth 6 GHz
Gain 11.2 dB Freq=100MHz
AMPLIFIERS
Gain Flatness ±0.4 dB 100MHz to 2000MHz
Noise Figure 8.2 dB Freq=2000MHz
Input VSWR 1.7:1 In a 50Ω system, DC to 4000MHz
Output VSWR 1.7:1 In a 50Ω system, DC to 4000MHz
Output IP
Output P
Reverse Isolation 17 dB Freq=2000MHz
3
1dB
Power Supply
Device Operating Voltage 5.0 5.5 6.0 V At pin 5 with I
Operating Current 70 mA
Specification
11 dB Freq=1000MHz
10.4 dB Freq=2000MHz
10.2 dB Freq=3000MHz
10 Freq=4000MHz
9.2 Freq=5000MHz
8.3 Freq=6000MHz
+34.5 dBm Freq=1000MHz±50kHz, P
+18.5 dBm Freq=1000MHz
Unit Condition
T=25°C, VD=5.5V, ICC=70mA
With 22Ω bias resistor
CC
=70mA
TONE
=-10dBm
4-138
Rev A5 010228
Page 3
RF2333
Pin Function Description Interface Schematic
1GND
2GND
3RFIN
4GND
5RFOUT
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
Same as pin 1.
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Same as pin 1.
RF output and bias pin.B iasing isaccomplished withanexternalseries
resistor and choke inductor to V
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
------------------------------------------------------ -
R
=
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 120 mA over the planned operating temperature.This means that a resistor between the supply and
this pin is alwaysrequired, even if a supply near 5.5V is available, to
provide DC feedback to prevent thermal runaway.Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
. The resistor is selected to set the
CC
V
SUPPLYVDEVICE
–()
I
CC
RF IN
RF OUT
4
AMPLIFIERS
GENERAL PURPOSE
P1
P1-1 VCC
J1
RF IN
1
2
3
50 Ωµstrip
Evaluation Board Schemati c
GND
NC
C1
100 pF
1
2
3
5
4
233X410-
R1
22 Ω
L1
100 nH
C2
100 pF
C3
100 pFC41 µF
50 Ωµstrip
VCC
P1-1
J2
RF OUT
Rev A5 010228
4-139
Page 4
4
RF2333
Evaluation Board Layout
Board Size 1” x 1”
AMPLIFIERS
GENERAL PURPOSE
4-140
Rev A5 010228
Page 5
Rev A5 010228
1.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5. 41 6.00
VSWR
1.50
2.00
2.50
20.00
0.10 0.69 1.28 1.87 2.46 3.05 3. 64 4.23 4.82 5.41 6.00
3rd Order InterceptPower(dBm)
22.00
24.00
26.00
28.00
30.00
32.00
34.00
36.00
38.00
7.00
0.10 0.69 1.28 1.87 2.46 3.05 3. 64 4.23 4.82 5.41 6.00
8.00
9.00
Gain (dB)
10.00
11.00
12.00
RF2333Input VSWRvs.FrequencyacrossTemperature
Frequency (GHz)
-40C
26 C
85 C
1.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5. 41 6.00
VSWR
1.50
2.00
2.50
Frequency (GHz)
Icc=70 mA
-40C
26 C
85 C
5.00
6.00
0.10 0.69 1.28 1.87 2.46 3.05 3. 64 4.23 4.82 5.41 6.00
7.00
Noise Figure (dB)
8.00
10.00
9.00
11.00
RF2333OutputVSW Rvs.Frequencyacross Temperature
Frequency (GHz)
Frequency (GHz)
Icc=70 mA
RF2333OutputIP3vs. Frequency across Temperature
Frequency (GHz)
Icc=70 mA
-40C
26 C
85 C
10.00
12.00
11.00
0.10 0.69 1.28 1.87 2.46 3. 05 3.64 4.23 4. 82 5.41 6.00
12.00
Output Power (dBm)
13.00
14.00
15.00
16.00
17.00
18.00
19.00
RF2333Noise Figure vs. Frequency across Temperature
Frequency (GHz)
Icc=70 mA
RF2333G ainvs.Freque ncyacrossTemperature
Icc=70 mA
20.00
RF2333OutputP1dBvs.Frequencyacross Temperature
Icc=70 mA
RF2333
4-141
-40C
26 C
-40C
26 C
-40C
26 C
85 C
85 C
GENERAL PURPOSE
4
AMPLIFIERS
85 C
Page 6
GENERAL PURPOSE
AMPLIFIERS
4
4-142
15.00
16.00
0.10 0.69 1.28 1.87 2.46 3.05 3. 64 4.23 4.82 5.41 6.00
Frequency (GHz)
Reverse Isolation (dB)
17.00
18.00
85 C
19.00
20.00
21.00
22.00
RF2333Reverse Isolationvs.FrequencyacrossTemperature
Icc=70 mA
-40C
26 C
RF2333
Rev A5 010228
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