Page 1
Preliminary
RF2325
4
Typical Applications
• Broadband Gain Blocks
• Final PA for Low-Power Applications
• IF or RF Buffer Amplifiers
Product Description
The RF2325 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for
broadband cascadable amplification. The device is
unconditionallystableand internally matched to 50Ω.The
only external components required for specified performance are bypass and DC blocking capacitors and two
bias elements (as shown in application schematic). The
RF2325 is available in a very small industry-standard
SOT-23 5-lead surface mount package, enabling compact
designs which conserve board space.
3V GENERAL PURPOSE AMPLIFIER
• Driver Stage for Power Amplifiers
• Oscillator Loop Amplifiers
1.60
+0.01
0.400
1
2.90
+0.10
0.950
3° MAX
0° MIN
2.80
+0.20
0.45
+0.10
0.127
1.44
1.04
Dimensions in mm.
0.15
0.05
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
ü
Si Bi-CMOS
GND
GND
RF IN
SiGe HBT
1
2
3
Si CMOS
54RF OUT
GND
Functional Block Diagram
Package Style: SOT 5-Lead
Features
• DC to >2000MHz Operation
• 2.7V to 3.3V Single Supply
• +17dBm Output IP3
•16dBGainat900MHz
•12dBGainat1900MHz
• Internally 50
Ordering Information
RF2325 3V General Purpose Amplifier
RF2325 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Ω Matched Input and Output
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010720
4-121
Page 2
RF2325
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage 4.0 V
Operating Ambient Temperature -40 to +85 ° C
Storage Temperature -55 to +150 °C
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Specification
Overall
Frequency Range DC to >2000 MHz
100 MHz Performance
Gain 20 dB
Noise Figure 5.0 dB
Output IP3 18 dBm
Output P
Input Return Loss 15 dB
AMPLIFIERS
Output Return Loss 18 dB
Isolation 23 dB
1dB
8dBm
500 MHz Performance
Gain 19 dB
Noise Figure 5.0 dB
Output IP3 18 dBm
Output P
Input Return Loss 12 dB
Output Return Loss 23 dB
Isolation 22 dB
1dB
7dBm
900 MHz Performance
Gain 15.3 16 17.3 dB
Noise Figure 5.0 dB
Output IP3 17 dBm
Output P
Input Return Loss 10 dB
Output Return Loss 20 dB
Isolation 22 dB
1dB
7dBm
1000 MHz Performance
Gain 16 dB
Noise Figure 5.0 dB
Output IP3 17 dBm
Output P
Input Return Loss 10 dB
Output Return Loss 19 dB
Isolation 22 dB
1dB
7dBm
2000 MHz Performance
Gain 12 dB
Noise Figure 5.4 dB
Output IP3 16 dBm
Output P
Input Return Loss 10 dB
Output Return Loss 17 dB
Isolation 19 dB
1dB
6dBm
Power Supply
Operating Voltage 3.0±10% V
Operating Current 23.5 27 29.5 mA V
Unit Condition
T=27°C, VCC=3.0V
T=27°C, VCC=3.0V
T=27°C, VCC=3.0V
T=27°C, VCC=3.0V
T=27°C, VCC=3.0V
T=27°C, VCC=3.0V
=3.0V
CC
4-122
Rev A4 010720
Page 3
Preliminary
RF2325
Pin Function Description Interface Schematic
1GND
2GND
3RFIN
Ground connection. Keep traces physically shor t and connect immediately to ground plane for best performance.
Same as pin 1.
RF input pin. This pin is not externally DC blocked and thus requires an
external blocking capacitor suitable for the frequency of operation. The
input impedance of this pin is internally matched to 50Ω using resistive
feedback.
RF OUT
RF IN
4
4GND
5RFOUT
Same as pin 1.
RF output and bias pin. The in put impedance of this pin is internally
matched to 50Ω using resistive feedback. Bias should be supplied to
this pin through an external series resistor and RF choke inductor.
Because DC biasing is present on this pin, a DC blocking c apacitor
should be used in most applications (see application schematic). The
supply side of the bias network should be well-bypassed.
RF IN
Application Schemati c
V
CC
39
Ω
1nF
220 nH
1
2
100 pF
3
5
100 pF
4
Evaluation Board Schemati c
(Download Bill of Mater ials from www.rfmd.com.)
Seepin3schematic.
AMPLIFIERS
GENERAL PURPOSE
RF OUT
Rev A4 010720
P1-1
NC
RF IN
J1
P1
1
VCC
GND
2
3
50Ωµstrip
C1
100 pF
P1-1
R1
39
Ω
L2
220 nH
1
2
3
5
C2
100 pF
4
C5
1nF
50Ωµstrip
RF OUT
J2
4-123
Page 4
4
GENERAL PURPOSE
AMPLIFIERS
RF2325
Preliminary
Evaluation Board Layout
1” x 1”
4-124
Rev A4 010720
Page 5
Preliminary
RF2325
22
20
18
16
14
12
10
Gain (dB)
8
Temp = 25°C
6
Temp = 80°C
4
Temp = -40°C
2
0
0.1 1.1 2.1 3.1
3
Temp = 25°C
Temp = 80°C
2.5
VSWR
1.5
Temp = -40°C
2
RF2325 S21, Vcc=2.7 V
Frequency (GHz)
RF2325 Input VSWR, Vcc = 2.7 V
22
20
18
16
14
12
10
Gain (dB)
8
Temp = 25°C
6
Temp = 80°C
4
Temp = -40°C
2
0
0.1 1.1 2.1 3.1
4
Temp = 25°C
3
2
VSWR
1
Temp = 80°C
Temp = -40°C
RF2325 S21, Vcc=2.7 V
Frequency (GHz)
RF2325 Output VSWR, Vcc = 2.7 V
4
AMPLIFIERS
GENERAL PURPOSE
1
0.1 1.1 2.1 3.1
Frequency (GHz)
RF2325 S11, Vcc = 2.7 V, Temp = 25°C
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
100MHz
0
0.2
0.4
1.0
0.6
0.8
2.0
3.0GHz
2
.
0
-
4
.
0
-
6
.
0
-
8
.
0
-
Swp Max
3.1GHz
0
.
2
0
.
3
0
.
4
5
1
10.0
5.0
3.0
4.0
0
.
0
.
4
0
.
3
-
0
.
2
-
Swp Min
0.1GHz
0
0.1 1.1 2.1 3.1
Frequency (GHz)
RF2325 S22, Vcc = 2.7 V, Temp= 25°C
8
.
1.0-1.0
0
6
.
0
4
.
0
0
.
0
.
0
2
.
0
100MHz
3.0GHz
0
0.2
0.4
0
.
0
1
-
2
.
0
5
-
-
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
Swp Max
3.1GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.1GHz
Rev A4 010720
4-125
Page 6
RF2325
Preliminary
4
GENERAL PURPOSE
AMPLIFIERS
22
20
18
16
14
12
10
Gain (dB)
8
Temp = 25°C
6
Temp = 80°C
4
Temp = -40°C
2
0
0.1 1.1 2.1 3.1
3
Temp = 25°C
2.5
VSWR
1.5
Temp = 80°C
Temp = -40°C
2
RF2325 S21, Vcc=3.0 V
Frequency (GHz)
RF2325 Input VSWR, Vcc = 3.0 V
-14
Temp = 25°C
Temp = 80°C
-16
Temp = -40°C
-18
S12 (dB)
-20
-22
-24
0.1 1.1 2.1 3.1
4
Temp = 25°C
3
2
VSWR
1
Temp = 80°C
Temp = -40°C
RF2325 S12, Vcc = 3.0 V
Frequency (GHz)
RF2325 Output VSWR, Vcc = 3.0 V
1
0.1 1.1 2.1 3.1
Frequency (GHz)
RF2325 S11, Vcc = 3.0 V, Temp = 25°C
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
100MHz
0
0.2
0.4
1.0
0.6
0.8
2.0
3.0GHz
2
.
0
-
4
.
0
-
6
.
0
-
8
.
0
-
Swp Max
3.07GHz
0
.
2
0
.
3
0
.
4
5
10.0
5.0
3.0
4.0
0
0
.
0
.
3
-
0
.
2
-
Swp Min
0.1GHz
0
0.1 1.1 2.1 3.1
Frequency (GHz)
RF2325 S22, Vcc = 3.0 V, Temp= 25°C
8
.
1.0-1.0
0
6
.
0
4
.
0
0
.
0
.
0
1
0
.
0
1
-
.
5
-
4
-
2
.
0
100MHz
3.0GHz
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
Swp Max
3.07GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.1GHz
4-126
Rev A4 010720
Page 7
Preliminary
RF2325
22
20
18
16
14
12
10
Gain (dB)
8
Temp = 25°C
6
Temp = 80°C
4
Temp = -40°C
2
0
0.1 1.1 2.1 3.1
3
Temp = 25°C
2.5
2
VSWR
1.5
Temp = 80°C
Temp = -40°C
RF2325 S21, Vcc=3.3 V
Frequency (GHz)
RF2325 Input VSWR, Vcc = 3.3 V
-14
Temp = 25°C
-16
-18
S12 (dB)
-20
-22
-24
4
3
2
VSWR
1
Temp = 80°C
Temp = -40°C
0.1 1.1 2.1 3.1
Temp = 25°C
Temp = 80°C
Temp = -40°C
RF2325 S12, Vcc = 3.3 V
Frequency (GHz)
RF2325 Output VSWR, Vcc = 3.3 V
4
AMPLIFIERS
GENERAL PURPOSE
1
0.1 1.1 2.1 3.1
Frequency (GHz)
RF2325 S11, Vcc = 3.3 V, Temp = 25°C
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
100MHz
0
0.2
0.4
3.0GHz
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
Swp Max
3.1GHz
0
.
2
0
.
3
0
.
4
5
1
10.0
5.0
3.0
4.0
0
0
.
4
0
.
3
-
0
.
2
-
Swp Min
0.1GHz
0
0.1 1.1 2.1 3.1
Frequency (GHz)
RF2325 S22, Vcc = 3.3 V, Temp= 25°C
8
.
1.0-1.0
0
6
.
0
4
.
0
0
.
0
.
0
2
.
0
100MHz
3.0GHz
0
0.2
0.4
0
.
0
1
-
2
.
0
.
5
-
-
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
Swp Max
3.1GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.1GHz
Rev A4 010720
4-127
Page 8
4
GENERAL PURPOSE
AMPLIFIERS
RF2325
Preliminary
4-128
Rev A4 010720
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