Page 1
RF2324
4
Typical Applications
• TDMA/CDMA/FM PCS Tx Amplifier
• Low Noise Transmit Driver Amplifier
• 2.4GHz WLAN Systems
Product Description
The RF2324 is a low noise CDMA/TDMA PAdriveramplifier with a very high dynamic range designed for transmit
digital PCS applications at 1880MHz. The device functions as an outstanding PA driver amplifier in the transmit
chain of digital subscriber units where low transmit noise
power is a concern. The IC includes a power down feature that can be used to completely turn off the device.
The IC is featured in a standard miniature 8-lead plastic
MSOP package.
PCS CDMA/TDMA 3V
PA DRIVER AMPLIFIER
• ISM Band LNA/Driver
• General Purpose Amplification
• Commercial and Consumer Systems
0.192
+ 0.008
0.012
0.0256
0.118
+0.004sq.
6° MAX
0° MIN
0.021
+0.004
0.006
+0.002
NOTES:
1. Shaded lead ispin 1.
2. All dimensions areexclusiveof
flash, protrusions or burrs.
3. Lead coplanarity: 0.002 with
respect to datum "A".
0.006
+0.003
-A-
0.034
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
PD
NC
RF IN
GND1
ü
SiGe HBT
1
2
3
4
Si CMOS
8
7
6
5
GND2
RF OUT
GND2
GND2
Functional Block Diagram
Package Style: MSOP-8
Features
• Low Noise and High Intercept Point
• Power Down Control
• Single 2.5V to 6.0V Power Supply
• 150MHz to 2500MHz Operation
• Extremely Small MSOP-8 Package
Ordering Information
RF2324 PCS CDMA/TDMA 3V PA Driver Amplifier
RF2324 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A6 010717
4-115
Page 2
RF2324
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +8.0 V
Input RF Level +10 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
DC
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Specification
Unit Condition
Overall
RF Frequency Range 150 to 2500 MHz
1880 MHz Performance
Gain 21 22 23 dB V
21 22 23 dB V
21 22 23 dB V
Output IP3 +26 +28 +35 dBm V
AMPLIFIERS
+26 dBm V
+25 dBm V
Noise Figure 1.8 2.5 dB V
1.8 2.5 dB VCC=3.0V
1.8 2.5 dB V
Reverse Isolation 36 dB V
36 dB V
35 dB V
Input VSWR 1.3:1 2.0:1
Output VSWR 1.25:1 2.0:1 Using External LC network used on Evalua-
P
1dB
14 16 dBm VCC=3.5V
12.5 14.5 dBm V
11 13 dBm V
Power Supply
Voltage (V
Voltage (V
Current Consumption 24 33 43 mA V
- Power Down 10 µΑ VCC=3.5V; VPD≤0.9V
) 2.5 to 6.0 V
CC
)2.72.82.9V
PD
24 31 38 mA V
29 36 43 mA VCC=2.5V; VPD=2.9V; VPD+V
Schematic per Evaluation Board, T= 25°C,
RF=1880MHz, V
=3.5V
CC
=3.0V
CC
=2.5V
CC
=3.5V
CC
=3.0V
CC
=2.5V
CC
=3.5V
CC
=2.5V
CC
=3.5V
CC
=3.0V
CC
=2.5V
CC
PD
=2.8V
tion Board
=3.0V
CC
=2.5V
CC
T=25°C
=3.5V; VPD=2.8V; VPD+VCC- Current
CC
Consumption from V
V
= 2.8V and 12 mA Ma x @ VPD=2.9V
PD
=3.0V; VPD=2.7V; VPD+V
CC
is 8.5 mA Typ. @
PD
CC
CC
4-116
Rev A6 010717
Page 3
RF2324
Pin Function Description Interface Schematic
1PD
PowerdownfortheIC.VPD=2.8V +/- 0.1V turns on the part.
V
trace length between the pin and the bypass capacitors should be min-
imized. The ground side of the bypass capacitors should connect
immediately to ground plane. Nominal current required for V
is 8.5 mA typical and 12 mA Max (@V
<0.9V turns off the Part. External RF bypassing is required. The
PD
=2.9 V).
PD
PD
=2.8V
PD
2NC
3RFIN
4GND1
5GND2
6GND2
7RFOUT
8GND2
No connection. This pin is typically left unconnected or grounded.
RF input pin. This pin is DC-coupled and matched to 50Ω at 1880MHz.
Ground connection. For best performance, keep traces physically short
and connect immed iately to ground plane.
See pin 6.
Ground connection. For best performance, keep traces physically short
and connect immed iately to ground plane.
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
This pin is ty p ically matched to 50Ω with a shunt bias/matching induc-
tor and series blocking/matchingcapacitor. Refer to application schematics.
See pin 6.
or pin 7 through a choke or matching inductor.
CC
RF IN
PD
TO OUTPUT
STAGE
4
AMPLIFIERS
GENERAL PURPOSE
Rev A6 010717
4-117
Page 4
RF2324
~1880 MHz Operation, Internal Collector Bias
Application Schematic:
4
GENERAL PURPOSE
AMPLIFIERS
VP D (2.8 V +/-0.1 V )
10 nF
220 pF
10 pF
RF IN
1
2
3
4
VCC
8
7
6
5
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
10 nF
220 pF
4.7 nH
1.0 pF
VOUTNC
P1
1
VPD
2
GND
VCC
3
P1-3
4.7
C7
P1-1
µ
F
PD
RF IN
4-118
C5
R1
0
J1
10 nFC1220 pF
Ω
50
Ω µ
C2
strip
C3
10 pF
1
2
3
4
8
7
6
5
2324400A
220 pFC610 nF
L1
4.7 nH
C4
1pF
50
Ω µ
strip
VCC
J2
RF OUT
Rev A6 010717
Page 5
Evaluation Board Layout
Board Size 1” x 1”
Board Thickness 0.031”; Board Material FR-4; Multi-Layer
RF2324
4
AMPLIFIERS
GENERAL PURPOSE
Rev A6 010717
4-119
Page 6
RF2324
4
GENERAL PURPOSE
AMPLIFIERS
RF2324 Bias Current versus Rc
45
Vcc = 2.7V
40
35
30
25
20
Bias Current (mA)
15
10
5
0
0 100 200 300 400 500 600
Vcc = 3.0V
Vcc = 3.3V
Vcc = 3.6V
Rs (Ω)
RF2324 Noise Figure versus Bias Current
1.8
1.7
1.6
Vcc= 2.7V
Vcc= 3.0V
Vcc= 3.3V
Vcc= 3.6V
RF2324 Gain versus Bias Current
22.5
Vcc= 2.7V
22.0
21.5
21.0
20.5
Vcc= 3.0V
Vcc= 3.3V
Vcc= 3.6V
Gain (dB)
20.0
19.5
19.0
18.5
0 5 10 15 20 25 30 35 40 45
Bias Current (mA)
RF2324 OIP3 versus Bias Current
31
Vcc= 2.7V
29
27
25
Vcc= 3.0V
Vcc= 3.3V
Vcc= 3.6V
1.5
Noise Figure (dB)
1.4
1.3
1.2
0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0
Bias Current(mA)
RF2324 IIP3 versus Bias Current
8
7
6
5
4
3
2
IIP3 (dBm)
1
0
-1
-2
-3
0 5 10 15 20 25 30 35 40 45
Vcc=2.7V
Vcc=3.0V
Vcc=3.3V
Vcc=3.6V
Bias Current(mA)
23
OIP3 (dBm)
21
19
17
15
0 5 10 15 20 25 30 35 40 45
Bias Current(mA)
4-120
Rev A6 010717
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