The RF2320 is a general purpose, low-cost, high-linearity
RF amplifier IC. The device is manufactured on a Gallium
Arsenide process and is featured in an SOP-16 batwing
package. It has been designed for use as an easily cascadable 75Ω gain block with a noise figure of less than
2dB. Gain flatness better than 0.5 dB from 5M Hz to
1000 MHz, and high linearity make this part ideal for cable
TV applications. Other applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 2500MHz.
The device i s self-contained with 75Ω input and output
impedances providing 2:1 VSWR matching. For higher
input and output return losses, see the evaluation schematic.
LINEAR GENERAL PURPOSE AMPLIFIER
• Laser Diode Driver
• Return Channel Amplifier
• Base Stations
-A-
0.009
0.004
0.050
8° MAX
0° MIN
0.392
0.386
0.158
0.150
0.244
0.230
0.035
0.016
0.010
0.008
0.021
0.014
0.069
0.064
0.060
0.054
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LINEAR CATV
AMPLIFIERS
Optimum Technology Matching® Applied
Si BJTGaAs MESFETGaAs HBT
Si Bi-CMOS
NC
NC
GND
GND
GND
RF IN
NC
NC
1
2
3
4
5
6
7
8
SiGe HBT
ü
Si CMOS
NC
16
NC
15
RF OUT
14
GND
13
GND
12
NC
11
NC
10
NC
9
Functional Block Diagram
Package Style: Standard Batwing
Features
• 5MHz to 2500MHz Operation
• Internally Matched Input and Output
• 16dB Small Signal Gain
• 1.6dB Noise Figure
• +22dBm Output Power
•Single6Vto9VPositivePowerSupply
Ordering Information
RF2320Linear General Purpose Amplifier
RF2320 PCBAFully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 ThorndikeRoad
Greensboro,NC 27409, USA
Tel (336)664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A8 010417
3-27
Page 2
RF2320
Absolute Maximum Ratings
ParameterRatingUnit
Device Current175mA
Device Voltage9V
Input RF Power+10dBm
Output Load VSWR20:1
Ambient Operating Temperature-40 to +85°C
Storage Temperature-40 to +150°C
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correctand accurate
at thetime ofthis printing. However, RFMicro Devices reservesthe right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
3
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Parameter
Min.Typ.Max.
Overall (50Ω)
Frequency Range5 to 2500MHz3dB Bandwidth
Input VSWR2:1Appropriate values for the DC blocking
AMPLIFIERS
Output VSWR1.3:1See note for Input VSWR.
Gain15dBAt 100MHz
Gain Flatness+/-1dBFrom 5MHz to 2500MHz
Noise Figure1.8dBFrom 5MHz to 900MHz
Output IP
Output IP
Output P
Reverse Isolation20dB
Gain16.5dBAt 100MHz
Noise Figure1.8dBFrom 5MHz to 900MHz,
Output IP
Output IP
Output P
3
2
1dB
3
2
1dB
Specification
16dBAt 2000MHz
2.6dBFrom 900MHz to 2500MHz,
35dBmAt 100MHz
36dBmAt 1000MHz
39.6dBmAt 1000MHz
21.5dBmAt 100MHz
22.5dBmAt 1000MHz
18dBmAt 2000MHz
16.7dBAt 1000MHz
2.6dBFrom 900MHz to 2500MHz,
36dBmAt 100MHz
36.3dBmAt 1000MHz
39.8dBmAt 1000MHz
23dBmAt 100MHz
24.7dBmAt 1000MHz
19.5dBmAt 2000MHz
UnitCondition
T=25 °C,VDD=7V, 50Ω System, PIN=-
10dBm
capacitor and bias inductor ar e r equired to
maintain this VSWR at the intended operating frequency range.
T=25 °C,V
10dBm
=9V, 50Ω System, PIN=-
DD
Power Supply
Supply Voltage (VDD)679V
Operating Current Range7585100mA
3-28
Rev A8 010417
Page 3
Preliminary
RF2320
Parameter
Min.Typ.Max.
Overall (75Ω)
Frequency Range5 to 2500MHz3dB Bandwidth
Input VSWR1.6:1Appropriate values for the output DC block-
Output VSWR1.3:1See note for input VSWR.
Gain15dBAt 500MHz
Gain Flatness+1-0.5dB5MHz to 1000MHz
Output IP
Output IP
Output IP
3
2
1dB
110 Channels
XMOD-71dBcAt 55.25MHz
CTB-79dBcAt 55.25MHz
CSO+1.25MHz-91dBcAt 55.25MHz
CSO-1.25MHz-51dBcAt 55.25MHz
CNR+65dBAt 55.25MHz
Specification
34.6dBmAt 10MHz, Delta F1 and F2 = 1MHz
36.1dBmAt 500MHz
33.1dBmAt 1000MHz
49.9dBmAt 100MHz, Delta F1 and F2 = 156MHz
48.5dBmAt 1000MHz
21dBmAt 10MHz
23dBmAt 500MHz
22dBmAt 1000MHz
-72dBcAt 331.25MHz
-72dBcAt 547.25MHz
-78dBcAt 331.25MHz
-78dBcAt 547.25MHz
-58dBcAt 331.25MHz
-56dBcAt 547.25MHz
-53dBcAt 331.25MHz
-58dBcAt 547.25MHz
+64dBAt 331.25MHz
+64dBAt 547.25MHz
UnitCondition
T=25oC, VDD=7V, 75Ω System, PIN=-8dBm
ing capacitor and bias inductor are required
to maintain this VSWR over the intended
operating frequency range.
10dBmV per channel, flat, at theinput of the
amplifier; V
=7V,ICC=75mA
CC
Power Supply
Supply Voltage (VDD)679V
Operating Current Range7585100mA
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AMPLIFIERS
Rev A8 010417
3-29
Page 4
3
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RF2320
Preliminary
PinFunctionDescriptionInterface Schematic
1NC
2NC
3GND
4GND
5GND
6RFIN
7NC
8NC
AMPLIFIERS
9NC
10NC
11NC
12GND
13GND
14RF OUT
No connection. This pin should be connected to the ground plane.
Same as pin 1.
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance. Each ground pin should
have a via to the ground plane.
Same as pin 3.
Same as pin 3.
RF input pin. This pin is not internally DC blocked. A DC blocking
capacitor suitable for the frequency of operation is required if DC is
present from the previous stage. The gate voltage is nominally 0V but
can be raisedexternallyto increase the bias level. Thiswillincreasethe
currentdrain but improve linearity.
Same as pin 1.
Same as pin 1.
Same as pin 1.
Same as pin 1.
Same as pin 1.
Same as pin 3.
Same as pin 3.
RF output and bias pin. Because DC is present on this pin, a DC block-
ing capacitor, suitable forthe frequency of operation, should be used in
most applications. For biasing, only an RF choke is needed.