Datasheet RF2318, RF2318PCBA-H, RF2318PCBA-L Datasheet (RF Micro Devices)

Preliminary

RF2318

3

Typical Applications

•CATVAmplifiers

• Cable Modems

• Broadband Gain Blocks

Product Description

The RF2318 is a broadband general purpose, low cost
high linearity RF amplifier IC. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as an easily cascadable 75Ω gain block. The gain flat­ness of better than 1.0dB from 5MHz to 1000MHz, and
the high linearity, make this part ideal for cable TV appli­cations. Other applications include IF and RF amplifica­tion in wireless voice and data communication products
operating in frequency bands up to 5000MHz. The device
is self-contained with 75Ω input and output impedances,
and requires only two external DC biasing elements to
operate as specified.

LINEAR BROADBAND AMPLIFIER

• Return Channel Amplifier

• Base Stations

.156
.152

1

.195
.191

.240
.232

5°

.022
.018

.050

.008

.017

.004

MIN

.056
.052

3

LINEAR CATV

AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

RF IN

GND

GND

GND

ü

SiGe HBT

1

2

3

4

Si CMOS

8

RF OUT

7

GND

6

GND

5

GND

Functional Block Diagram

Package Style: SOP-8

Features

• DC to over 5000MHz Operation

• Internally Matched Input and Output

• 8dB Small Signal Gain

• 6dB Noise Figure

• +18dBm Output Power

• Single 9V to 12V Positive Power Supply

Ordering Information

RF2318 Linear BroadbandAmplifier
RF2318 PCBA-L Fully Assembled Evaluation Board (DCto 3GHz)
RF2318 PCBA-H Fully Assembled Evaluation Board (3GHz to 6GHz)

RF Micro Devices, Inc.
7625 ThorndikeRoad
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A2 010228

3-21

RF2318

Absolute Maximum Ratings

Parameter Rating Unit

Device Current 70 mA
Input RF Power +13 dBm
Output Load VSWR 20:1
Ambient Operating Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C

Preliminary

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate
at the time ofthis printing. However, RFMicro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility forthe useof the described product(s).

3

LINEAR CATV

Parameter

Min. Typ. Max.

Overall (50Ω)

Frequency Range DC to 5000 MHz 1dB Bandwidth
Gain 8 8 9 dB From 10MHz to 1000MHz

AMPLIFIERS

Noise Figure 6 dB From 50MHz to 300MHz, -30°C to +70°C

Input VSWR 1.6:1 1.9:1 From 10MHz to 1800MHz

Output VSWR 2.0:1 3.0:1 From 10MHz to 1 800MHz

Output IP
Output IP

Output P

Saturated Output Power TBD dBm At 100MHz
Saturated Output Power 18 dBm At 500MHz
Saturated Output Power TBD dBm At 900MHz
Reverse Isolation 15 dB From 30MHz to 4000MHz

2

3

1dB

Specification

8 9 10 dB From 1000MHz to 2000MHz

10 11 12 dB From 2000MH z to 5000MHz

6 dB From 300MHz to 1000MHz, -30°C to +70°C

1.4:1 From 1800MHz to 5000MHz

1.9:1 From 1800MHz to 4000MHz

3.0:1 From 4000MHz to 5000MHz

+50 dBm Tones at 500MHz and 900MHz
+30 dBm At 100MHz
+33 +35 dBm At 500MHz

+30 +33 dBm At 900MHz

TBD dBm At 100MHz
TBD dBm At 500MHz

TBD dBm At 900MHz

20 dB From 4000MHz to 5000MHz

Unit Condition

T=27°C, VCC=9V, Icc=60mA, RC=30Ω

Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper­ating frequency range.

Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper­ating frequency range.

Power Supply

Device Voltage (VD)7.0VOnpin8,I

6.5 V On pin 8, I

Operating Current Range 63 65 mA V

=7.0V

D

CC
CC

=63mA
=49mA

3-22

Rev A2 010228

Preliminary

RF2318

Parameter

Min. Typ. Max.

Overall (75Ω)

Frequency Range DC to 5000 MHz 1dB Bandwidth
Gain 8 dB
Noise Figure 6 dB From 30MHz to 2000MHz, -30°C to +70°C
Input VSWR 1.3:1 From 30MHz to 2000 MHz, -30°C to +70°C

Output VSWR 2.0:1 From 30MHz to 1000MHz, -30°C to +70°C

Output IP
Output IP

Output P

Saturated Output Power TBD dBm At 100MHz

Reverse Isolation 15 dB From 30MHz to 4000MHz

CSO TBD dB 77 Channels, 36dBmV output/channel

CTB TBD dB 77 Channels, 36dB mV output/channel

Cross Modulation TBD dB 77 Channels, 36dBmV output/channel

2

3

1dB

Specification

1.4:1 From 2000MHz to 4000MHz

1.6:1 From 4000MHz to 5000MHz

2.6:1 From 1000MHz to 5000MHz

+54 dBm Tones at 500MH z and 900MHz

TBD dBm At 100MHz

+36 +37 dBm At 500MHz

TBD dBm At 900MHz
TBD dBm At 100MHz

18 dBm At 500MHz
18 dBm At 900MHz

19 dBm At 500MHz

18.5 dBm At 900MHz

20 dB From 4000M Hz to 5000MHz

TBD dB 110 Channels, 36dB mV output/channel

TBD dB 110 Channels, 36dB mV output/channel

TBD dB 110 Channels, 36dB mV output/channel

Unit Condition

T=25°C,VCC=9V,Icc=63mA, RC=30Ω,

75Ω System

Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper­ating frequency range.

Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper­ating frequency range.

3

LINEAR CATV

AMPLIFIERS

Rev A2 010228

3-23

3

LINEAR CATV

RF2318

Preliminary

Pin Function Description Interface Schematic

1RFIN

2GND

3GND
4GND

AMPLIFIERS

5GND
6GND
7GND
8RFOUT

RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in all
applications. The device has internal feedback, and not using a DC
blocking capacitor will disable the temperature compensation.The bias
of the device can be controlled by this pin. Adding an optional 1kΩ
resistor to ground on thispin reducesthe bias level, which maybe com­pensated for by a higher supply voltage to mainta in the appropriate
bias level. Thenet effect of this is an increased output powercapability,
as well as higher linearity for signals with high crest factors. DC cou­pling of the input is not allowed, because this will override the internal
feedback loop and cause temperature instability.

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance. Each ground pin should
have a via to the ground plane.

Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 2.
RF output and bias pin. Because DC is present on this pin, a DC block-

ing capacitor, suitable forthe frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The value for the resistor R

82Ω for V
rent of 63mA. In lower power applications the value of R
increased to lower the current and V

=12V.The DC voltage on this pin is typically 7V with a cur-

CC

is 30Ω (0.5 W) for VCC=9Vand

C

can be

on thispin.

D

C

RF IN

RF OUT

3-24

RF IN

Application Schematic

VCC=9-12V

RC=30-82

3.3µH

220 pF

1

Optional:
R

=1-2k

Ω

S

Note 1

Note 1:
Optional resistorRs canbe used to maintain thecorrect biaslevel at higher supply voltages.This
is usefulto increaseoutput capability or linearity forsignals withhigh crest factors.

2

3

4

8

7

6

5

Ω

220 pF

RF OUT

Rev A2 010228

Preliminary

Evaluation Board Schematic - DC to 3GHz

RF2318

(Download Bill of Materials from www.rfmd.com.)

VCC

P1

J1

RF IN

1
2
3

CON3

GND
GND

50Ωµstrip

P1-1 VCC

C3

1uF

C4

10 nF

R7

120

Ω

L1

Ω

C2

1nF

50Ωµstrip

C1

1nF

Ω

8

7

6

5

2318400-

R8

120

3.3 uH

R10

120

1

2

3

4

R9

120

Ω

Evaluation Board Schematic - 3GHz to 6GHz

VCC

J2

RF OUT

3

LINEAR CATV

AMPLIFIERS

P1

P1-1 VCC

1
2
3

CON3

J1

RF IN

Rev A2 010228

GND
GND

50Ωµstrip

C1

8pF

C3

1uF

C4

10 nF

Ω

8

7

6

5

2318401-

R8

120

22 nH

R10

120

1

2

3

4

R9

120

Ω

R7

120

Ω

L1

Ω

C2

8pF

50Ωµstrip

J2

RF OUT

3-25

3

LINEAR CATV

RF2318

Preliminary

Evaluation Board Layout - DC to 3GHz

Board Size 1.233” x 1.145”

Board T hickness 0.031”, Board Material FR-4

AMPLIFIERS

Evaluation Board Layout - 3GHz to 6GHz

3-26

Rev A2 010228