Datasheet RF2317, RF2317PCBA Datasheet (RF Micro Devices)

RF2317

3

Typical Applications

• CATV Distribution Amplifiers

• Cable Modems

• Broadband Gain Blocks

Product Description

The RF2317 is a general purpose, low-cost high-linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran­sistor (HBT) process, and has been designed for use as
an easily cascadable 75Ω gain block. The gain flatness of
better than ±0.5dB from 50MHz to 1000MHz, and the
high linearity, make this part ideal for cable TV applica­tions. Other applications include IF and RF amplification
in wireless voice and data communication products oper­ating in frequency bands up to 3GHz. The device is self­contained with 75Ω input and output impedances and
requires only two external DC biasing elements to oper­ate as s pecified.

LINEAR CATV AMPLIFIER

• Laser Diode Driver

• Return Channel Amplifier

• Base Stations

0.157

0.150

0.020
REF

0.393

0.386

8° MAX
0° MIN

0.244

0.229

0.034

0.016

0.009

0.007

0.034 REF

0.020

0.014

0.068

0.053

3

-A-

0.008

0.004

AMPLIFIERS

LINEAR CATV

0.068

0.064

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

NC

GND

GND

RF IN

NC

GND

GND

NC

ü

SiGe HBT

1

2

3

4

5

6

7

8

Si CMOS

16

15

14

13

12

11

10

9

NC

GND

GND

RF OUT

NC

GND

GND

NC

Functional Block Diagram

Package Style: CJ2BAT0

Features

• DC to 3.0GHz Operation

• Internally Matched Input and Output

• 15dB Small Signal Gain

• 4.9dB Noise Figure

• +26dBm Output Power

• Single 9V to 12V Power Supply

Ordering Information

RF2317 Linear CATV Amplifier
RF2317 PCBA Fully Assembled Evaluation Board - 50Ω
RF2317 PCBA Fully Assembled Evaluation Board - 75Ω

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A16 010816

3-13

RF2317

Absolute Maximum Ratings

Parameter Rating Unit

Device Current 250 mA
Input RF Power +18 dBm
Output Load VSWR 20:1
Ambient Operating Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

3

Parameter

Min. Typ. Max.

Overall (50Ω)

Frequency Range DC 3000 MHz 3dB Bandwidth
Gain 13.5 14.5 15.0 dB
Noise Figure 4.9 dB From 100MHz to 1000MHz

AMPLIFIERS

LINEAR CATV

Input VSWR 1.7 Appropriate values for the DC blocking

Output VSWR 2.2 Appropriate values for the DC blocking

Output IP

Output IP
Output P

Saturated Output Power +26 dBm At 100 M Hz

Reverse Isolation 20 dB

3

2

1dB

Specification

+42 dBm At 100 M Hz

+37 +40 dBm At 500MHz

+38 dBm At 900 M Hz
+63 dBm F1=400MHz, F2=500MHz, F

+25.5 dBm At 100MHz

+24 dBm At 500 M Hz
+22 dBm At 900 M Hz

+25 dBm At 500 M Hz
+23 dBm At 900 M Hz

Unit Condition

T=25 °C, ICC=180mA, RC=11Ω,50Ω Sys-

tem

capacitors and bias inductor are required to
maintain this VSWR at the intended operat­ing frequency range.

capacitors and bias inductor are required to
maintain this VSWR at the intended operat­ing frequency range.

OUT

=100MHz

Thermal

Theta

JC

Maximum Junction Temperature 153 °C
Mean Time Between Failures

Theta

JC

Maximum Junction Temperature 177 °C
Mean Ti me Between Failures 99 years T

47 °C/W ICC=150mA, P

2

8.6x10

5

1.8x10
54 °C/W ICC=180mA, P

3

9.4x10

years T
years T

years T

AMB
AMB

AMB
AMB

=+85°C
=+25°C

=+85°C
=+25°C

DISS

DISS

=1.3W, T

=1.7W, T

AMB

AMB

=85°C

=85°C

Power Supply

Device Voltage 8.3 V On pin 13, ICC=150mA

8.7 V On pin 13, I

Operating C urrent Range 100 180 mA Actual current determined by V

=180mA

CC

CC

and R

S

3-14

Rev A16 010816

RF2317

Parameter

Min. Typ. Max.

Overall (75Ω)

Frequency Range DC 3000 MHz 3dB Bandwidth
Gain 15.0 dB
Noise Figure 5.3 dB From 100MHz to 1000MHz
Input VSWR 1.1:1 Appropriate values for the DC blocking

Output VSWR 1.5:1 Appropriate values for the DC blocking

Output IP

Output IP
Output P

Saturated Output Power +25 dBm At 100MHz

Reverse Isolation 20 dB

3

2

1dB

79 Channels

XMOD -110 dBc At 55.25MHz

CTB -88 dBc At 55.25MHz

CSO+1.25MHz -93 dBc At 55.25MHz

CSO-1.25MHz -68 dBc At 55.25MHz

110 Channels

XMOD -91 dBc At 55.25MHz

CTB -86 dBc At 55.25MHz

CSO+1.25MHz -92 dBc At 55.25MHz

CSO-1.25MHz -63 dBc At 55.25MHz

Specification

+42 dBm At 100MHz

+37 +40 dBm At 500MHz

+38 dBm At 900MHz
+63 dBm F1=400MHz, F2=500MHz, F

+24 dBm At 100MHz
+23 dBm At 500MHz

+21 dBm At 900MHz

+24 dBm At 500MHz
+22 dBm At 900MHz

-78 dBc At 331.25MHz

-75 dBc At 547.25MHz

-88 dBc At 331.25MHz

-88 dBc At 547.25MHz

-78 dBc At 331.25MHz

-70 dBc At 547.25MHz

-78 dBc At 331.25MHz

-85 dBc At 547.25MHz

-77 dBc At 331.25MHz

-75 dBc At 547.25MHz

-85 dBc At 331.25MHz

-85 dBc At 547.25MHz

-78 dBc At 331.25MHz

-71 dBc At 547.25MHz

-68 dBc At 331.25MHz

-81 dBc At 547.25MHz

Unit Condition

T=25°C, ICC=180mA, RC=11Ω,
75Ω System

capacitors and bias inductor are required to
maintain this VSWR at the intended operat­ing frequenc y range.

capacitors and bias inductor are required to
maintain this VSWR at the intended operat­ing frequenc y range.

10dBmV per channel, flat, at the input of the
amplifier; I

10dBmV per channel, flat, at the input of the
amplifier; I

=150mA, VCC=10.6V

CC

=150mA, VCC=10.6V

CC

=100MHz

OUT

3

AMPLIFIERS

LINEAR CATV

Rev A16 010816

3-15

3

RF2317

Pin Function Description Interface Schematic

1NC
2GND

3GND
4RFIN

5NC
6GND
7GND
8NC

AMPLIFIERS

LINEAR CATV

9NC
10 GND
11 GND
12 NC
13 RF OUT

This pin is internally not connected.
Ground connection. Keep traces physically short and connect immedi-

ately to ground plane for best performance. Each ground pin should
have a via to the ground plane.

Same as pin 2.
RF input pin. This pin is NOT internally DC blocked. A DC blocking

capacitor, suitable for the frequency of operation , should be us ed in
most applications.DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature in stabil­ity.

This pin is internally not connected.
Same as pin 2.
Same as pin 2.
This pin is internally not connected.
This pin is internally not connected.
Same as pin 2.
Same as pin 2.
This pin is internally not connected.
RF output and bias pin. Because DC is present on this pin, a DC block-

ing capacitor, suitable for the frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The DC voltage on this pin is typically 8.3V with a current of
150mA. See device voltage versus device current plot. In lower power
applications the value of R

V

on this pin.

D

can be increased to lower the current and

C

RF OUT

RF IN

14 GND
15 GND
16 NC

3-16

Same as pin 2.
Same as pin 2.
This pin is internally not connected.

Rev A16 010816

Application Schemati c

R

5MHz to 50MHz Reverse Path

1

2

16

15

RF2317

V

CC

11

Ω

10 nF

J1

RF IN

14

39µH

13

12

11

10

9

RF IN

3

18 nF

4

5

6

7

8

NOTES:
Gain Flatness <0.5 dB
Input and Output Return Loss >20 dB in 75

Ω

system

Evaluation Board Schematic - 50Ω

(Download Bill of Materials from www.rfmd.com.)

P1

1

P1-1 VCC

GND

2

NC

3

C1

50Ωµstrip 50Ωµstrip

1nF

1

2

3

4

5

6

16

15

14

13

12

11

RT = 10.2

Ω

R1

R2

R3

51

51

Ω

Ω

L1

3.3

µ

H

C2

1nF

R4

51

51

Ω

Ω

18 nF

3

FOUT

AMPLIFIERS

LINEAR CATV

VCC

µ

F

Ω

C3

220 pF

J2

RF OUT

R5

51

C4

100 nFC51

7

8

Rev A16 010816

10

9

2317400 Rev -

3-17

RF2317

R

Evaluation Board Schematic - 75Ω

VCC

3

Ω

C3

0.1 uF

R1

Ω

56

L1

1000 nH

C2

1nF

R2

R3

Ω

56

Ω

56

J2

FOUT

P1

P1-1 VCC

J1

RF IN

AMPLIFIERS

LINEAR CATV

75Ωµstrip 75Ωµstrip

1
2

GND
NC

3

C1

1nF

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

2317401 Rev -

R4

56

3-18

Rev A16 010816

Evaluation Board Layout - 50Ω

2.0” x 2.0”

Board Thickness 0.031”, Board Material FR-4

RF2317

3

AMPLIFIERS

LINEAR CATV

Evaluation Board Layout - 75Ω

1.40” x 1.40”

Board Thickness 0.062”, Board Material FR-4

Rev A16 010816

3-19

RF2317

3

75 Ohms, ICC = 150 mA, Temp = 25°C

3.0

Swp Max

2GHz

0

.

2

0

.

3

0

.

4

0

.

5

0

.

0

1

10.0

5.0

4.0

0

.

0

1

-

0

.

5

-

0

.

4

-

0

.

3

-

0

.

2

-

Swp Min

0.005GHz

8

1.0-1.0

.
0

6

.

0

4

.

0

2

.

0

0

0.2

0.4

2

.

S[2,2]

0

-

AMPLIFIERS

LINEAR CATV

4

.

0

-

6

.

0

-

0.6

S[1,1]

8
.

0

-

0.8

1.0

2.0

CollectorVoltage versus Current

10.0
Vcc

9.0

8.0

75 Ohms, ICC = 180 mA, Temp = 25°C

8

1.0-1.0

.
0

6

.

0

4

.

0

2

.

0

0

-

15.4

15.2

15.0

2

.

0

.

0

-

0.2

0.4

S[2,2] S[1,1]

4

6

.

0

-

Gain versus Frequency

0.6

1.0

0.8

8
.

0

-

2.0

0

.

2

3

5.0

3.0

4.0

0

0

.

2

-

-40 degrees C
+26 degrees C
+85 degrees C

Swp Max

2GHz

0

.

0

.

4

0

.

5

.

0

1

10.0

0

.

0

0

.

5

-

0

.

4

-

.

3

-

Swp Min

0.005GHz

0

1

-

14.8

7.0

14.6

Gain (dB)

6.0

Collector Voltage (Volts)

14.4

3-20

5.0

4.0

0.0 50.0 100.0 150.0 200.0 250.0

Collector Current(mA)

14.2

14.0

100.0 200.0 300.0 400.0 500.0

Frequency(MHz)

Rev A16 010816