Datasheet RF2312, RF2312PCBA Datasheet (RF Micro Devices)

RF2312

3

Typical Applications

• CATV Distribution Amplifiers

• Cable Modems

• Broadband Gain Blocks

Product Description

The RF2312 is a general purpose, low cost high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran­sistor (HBT) process, and has been designed for use as
an easily cascadable 75Ω gain block. The gain flatness of
better than 0.5dB from 5MHz to 1000MHz, and the high
linearity, make this part ideal for cable TV applications.
Other applications include IF and RF amplification in
wireless voice and data communication products operat­ing in frequency bands up to 2500MHz. The device is
self-contained with 75Ω input and output impedances,
and requires only two external DC biasing elements to
operate as specified.

LINEAR GENERAL PURPOSE AMPLIFIER

• Laser Diode Driver

• Return Channel Amplifier

• Base Stations

-A-

0.160

0.152

0.200

0.192

0.248

0.232

8° MAX

0° MIN

0.0500

NOTES:

1. Shaded lead is pin 1.

2. All dimensions are excluding flash, protrusions or burrs.

3. Lead coplanarity: 0.005 with respect to datum "A".

4. Package surface finish: M atte (Charmilles #24~27).

0.0164

0.018

0.014

0.050

0.0100

0.0076

0.059

0.057

0.010

0.004

3

AMPLIFIERS

LINEAR CATV

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

1RF IN 8RFOUT

2GND

3GND

4GND

Si CMOS

7GND

6GND

5GND

Functional Block Diagram

Package Style: SOIC-8

Features

• DC to well over 2500MHz Operation

• Internally Matched Input and Output

• 15dB Small Signal Gain

• 3.8dB Noise Figure

• +20dBm Output Power

• Single 5V to 12V Positive Power Supply

Ordering Information

RF2312 Linear General Purpose Amplifier
RF2312 PCBA Fully Assembled Evaluation Board - 75Ω
RF2312 PCBA Fully Assembled Evaluation Board - 50Ω

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev C2 010813

3-1

RF2312

Absolute Maximum Ratings

Parameter Rating Unit

Device Current 125 mA
Input RF Power +18 dBm
Output Load VSWR 20:1
Ambient Operating Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Maximum Junction Temperature 150 °C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct andaccurate
at the time of this printing. However, RF Micro Devices reservesthe right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

3

Parameter

Min. Typ. Max.

Overall (50Ω)

Frequency Range DC to 2500 MHz 3dB Bandwidth
Gain 14.5 15.1 dB

AMPLIFIERS

LINEAR CATV

Noise Figure 3.8 4.3 dB From 50MHz to 300MHz, -30 to +70 °C

Input VSWR 1.7:1 Appropriate values for the DC blocking

Output VSWR 1.4:1 Appropriate values for the DC blocking

Output IP
Output IP
Output IP
Output P
Output P
Output P
Saturated Output Power +23 dBm At 100MHz

Saturated Output Power +22.5 dBm At 500MHz
Saturated Output Power +20.5 dBm At 900MHz
Reverse Isolation 20 dB

3
3

3
1dB
1dB
1dB

Specification

4.2 4.8 dB From 300MHz to 1000MHz, -30 to +70°C

+40 +42 dBm At100MHz
+33 +36 dBm At500MHz
+30 +33 dBm At900MHz
+21 +22 dBm At100MHz
+20 +21 dBm At500MHz
+17 +18.5 dBm At 900MHz

Unit Condition

T=25°C, VCC=9V, Freq=900 MHz,

R

=30Ω,50Ω System, PIN=-4dBm

C

capacitors and bias inductor are required to
maintain this VSWR at the intended operat­ing frequency range.

capacitors and bias inductor are required to
maintain this VSWR at the intended operat­ing frequency range.

Thermal

Theta

JC

Mean Time Between Failures

66 °C/W P

708x10

2.75x10

6

6

hours T
hours T

=0.61W,T

DISS

T

=136.8°C

J

No RF Input/Output

=+25°C

AMB

=+80°C

AMB

AMB

=85°C, T

CASE

=96.6°C,

Power Supply

Device Voltage (VD)6.0VOnpin8,I

5.0 V On pin 8, I

Operating C urrent Range 85 100 115 mA V

=9.0V, RC=30Ω

CC

=100mA

CC

=40mA

CC

3-2

Rev C2 010813

RF2312

Parameter

Min. Typ. Max.

Overall (75Ω)

Frequency Range DC to 2500 MHz 3dB Bandwidth
Gain 14.5 16 dB
Noise Figure 3.8 4.3 dB From 50MHz to 300MHz, -30°C to +70°C.

Input VSWR 1.3:1 1.4:1 From 50MHz to 900MHz, -30°C to +70°C.

Output VS WR 1.25:1 From 50MHz to 300MHz, -30°C to +70° C.

Output IP
Output IP
Output IP
Output P
Output P
Output P
Saturated Output Power +23 dBm At 100MHz

Saturated O utput Power +22.5 dBm At 500MHz
Saturated O utput Power +20.5 dBm At 900MHz
Reverse Isolation 20 dB

3
3

3
1dB
1dB
1dB

77 Channels

CSO >86 dBc 61.25MHz

CTB >86 dBc 61.25MHz

CNR 65 66 dB

110 Channels

CSO >86 dBc 61.25MHz

CTB 84 dBc 61.25MHz

Cross Modulation 77 dBc 61.25MHz

CNR 65 66 dB

Specification

4.2 4.8 dB From 300MHz to 1000MHz, -30° C to +70°C.

1.4:1 From 300MHz to 500MHz, -30°C to +70°C.

1.5:1 1.7:1 From 500MHz to 900MHz, -30°C to +70°C.

+36 +38 dBm At 100MHz
+33 +36 dBm At 500MHz
+28 +30 dBm At 900MHz
+21 +22 dBm At 100MHz
+20 +21 dBm At 500MHz
+17 +18.5 dBm At 900MHz

>86 dBc 83.25MHz

76 dBc 193.25MHz
72 dBc 313.2625MHz
64 dBc 547.25MHz

>86 dBc 83.25MHz

86 dBc 193.25MHz
84 dBc 313.2625MHz
83 dBc 547.25MHz

>86 dBc 83.25MHz

76 dBc 193.25MHz
70 dBc 313.2625MHz
64 dBc 547.25MHz

86 dBc 83.25MHz
85 dBc 193.25MHz
81 dBc 313.2625MHz
80 dBc 547.25MHz

74 dBc 445.25MHz

Unit Condition

T=25°C,VCC=9V, Freq =900MHz,

R

=30Ω,75Ω System

C

Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat­ing frequenc y range.

Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat­ing frequenc y range.

77 Channels to 550MHz at 10dBm V,
33 channels to 760MHz at 0dBmV flat at
DUT input

110 Channels, 10dBmV/channel at input

3

AMPLIFIERS

LINEAR CATV

Rev C2 010813

3-3

RF2312

3

Parameter

Min. Typ. Max.

Overall (75Ω Push-Pull)

Frequency Range DC to 150 MHz
Gain 15 dB
Noise Figure 5.0 dB From 5MHz to 150MHz, -30°C to +70°C.
Input VSWR 1.1:1
Output VSWR 1.2:1
Output IP

Output IP

Second Harmonic -73 dBc At 10MHz

AMPLIFIERS

LINEAR CATV

2

3

Specification

+71 dBm At 10MHz
+72 dBm At 30MHz

+74 dBm At 50MHz
+40 dBm At 10MHz

+40 dBm At 30MHz
+40 dBm At 50MHz

-65 dBc At 30MHz

-65 dBc At 50MHz

Unit Condition

T=25°C, VCC=9Vor 24V, 75Ω System,

RF

=-10dBm

IN

3-4

Rev C2 010813

RF2312

Pin Function Description Interface Schematic

1RFIN

2GND

3GND
4GND
5GND
6GND
7GND
8RFOUT

RF input pin. This pin is NOT internally DC-blocked.A DC-blocking
capacitor, suitable for the frequency of operation, should be used in all
applications. The device has internal feedback, and not using a DC­blocking capacitor will disable the temperature compensation.The bias
of the device can be controlled by this pin. Adding an optional 1kΩ
resistor to ground on this pin reduces the bias l evel, whi ch may be com­pensated for by a higher supply voltage to maintain the appropriate
bias level. The net effect of this is an increased output power capability,
as well as higher linearity for signals with high crest factors. DC-cou­pling of the input is not allowed, because this will override the internal
feedback loop and cause temperature instability.

Ground connection. For best performance,keep traces physically short
and connect immediately to ground plane. Each ground pin should
have a via to the ground plane.

Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 2.
RF output and bias pin. Because DC is present on this pin, a DC-block-

ing capacitor, suitable for the frequency of operation, should be used in
most applications. For biasing, an RF choke in se ries with a resistor is
needed. The value for the resistor R

21Ω for V
current of 100mA. In lower power applications the value of R
increased to lower the current and V

=8V.The DC voltage on this pin is typically 6.0V with a

CC

is 30Ω (0.5W) for VCC=9V and

C

can be

on this pin.

D

C

RF IN

RF OUT

3

AMPLIFIERS

LINEAR CATV

Rev C2 010813

3-5

3

RF2312

10 nF

Application Schematic

5MHz to 50MHz Reverse Path

30 Ω 100 nF 100 nF

R

S

1-2kΩ

1

2

8

7

10 µH

V

CC

10 nF

RF OUTRF IN

3

AMPLIFIERS

LINEAR CATV

NOTE 1:

Optional resistor R
increase output capability or linearity for signals with high crest factors.

can be used to maintain the correct bias level at higher supply voltages. This is used to

S

4

6

5

Application Schematic

10dB Gain

VCC=9-12V

C1

220 pF

C4

TBD

R5

1-2kΩ

R6

7.5 Ω

C3

10 nF

1

2

3

4

R2

470 Ω

R1 = 21 - 30 Ω

L1

330 nH

8

7

6

5

R7

7.5 Ω

C2

220 pF

C5

TBD

RF OUTRF IN

R5 is used to maintain the correct bias level at higher supply voltages and is also required in this configuration. The RC network of R2
and C3 should be kept physically as short as possible. R2 can be adjusted as required to improve the impedancematching. R6 and
R7 reduce the typical gain by increasing the emitter resistance. L1 should be at least 200 Ω reactive at the lowest operating
frequency. C1 and C2 should be less than 10 Ω at the lowest operating frequency. C4 and C5 improve gain flatness.

3-6

Rev C2 010813

Application Schemati c

Push-Pull Standard Voltage

V

U1

1

8

P1

1
2
3

CON3

RF2312

GND

120 Ω120 Ω120 Ω 120 Ω 0.1uF

3

AMPLIFIERS

LINEAR CATV

FEDGE

TTWB-2-B

2

3

4

1

2

3

4

RF2312

U2

RF2312

7

6

5

TTWB-2-B

V

8

7

6

5

FEDGE

Rev C2 010813

3-7

3

F

RF2312

Application Schematic

Push-Pull 24V

120

Ω

120

120

Ω

Ω

120

P1

1

GND
2
3

CON3

Ω

0.1 uF

120

U1

1

2

3

4

RF2312

Ω

120

U2

1

2

120

Ω

Ω

120

8

7

6

5

47 nF

63 nF

10 uH

Ω

8

7

10 uH

0.1 uF

10 nF

10 nF

TTWB-2-A

EDGE

2400

AMPLIFIERS

LINEAR CATV

FEDGE

TTWB-2-A

2400

Ω

10 nF

10 nF

Ω

3

4

RF2312

3-8

6

5

Rev C2 010813

S

P1 H3M

F

P1-1 VCC (9 V)

1
2

GND
NC

3

Evaluation Board Schematic - 50Ω

(Download Bill of Materials from www.rfmd.com.)

R1

120

R2

120

Ω

R3

120

Ω

R4

120

Ω

100 nFC4100 nF

Ω

RF2312

P1-1

C2

J1

SMA

J1

FCONN

(75

Ω

)

microstrip

P1

P1-1 VCC

1
2
3

CON3

microstrip

GND
NC

C1

220 pF

1

2

3

4

8

7

6

5

2312400A

Evaluation Board Schematic - 75Ω

P1-1

C1

1nF

R4

120

1

2

8

7

R1

120

Ω

Ω

L1

330 nH

C3

220 pF

C3

0.1 uF

R2

120

L1

1000 nH

C3

1nF

Ω

microstrip

R3

120

Ω

microstrip

OUT

OUT

J2

MA

(75

J2

CONN

Ω

3

AMPLIFIERS

LINEAR CATV

)

3

4

6

5

2312401-

NOTE: For 5V applications, R1 to R4 may be removed (shorted). This will result i n degraded distortion performance.

Rev C2 010813

3-9

3

RF2312

Evaluation Board Layout - 50Ω

2.02” x 2.02”

Board Thickness 0.031”, Board Material FR-4

AMPLIFIERS

LINEAR CATV

3-10

Rev C2 010813

Evaluation Board Layout - 75Ω

Standard Voltage

1.40” x 1.40”

Board Thickness 0.062”, Board Material FR-4

RF2312

3

AMPLIFIERS

LINEAR CATV

Rev C2 010813

3-11

3

RF2312

Evaluation Board Layout - 75Ω

Push-Pull, Standard Voltage

1.70” x 1.50”

Board Thickness 0.062”, Board Material FR-4

AMPLIFIERS

LINEAR CATV

3-12

Rev C2 010813

3

RF2312

Evaluation Board Layout - 75Ω

Push-Pull, 24V

1.70” x 1.50”

Board Thickness 0.062”, Board Material FR-4

AMPLIFIERS

LINEAR CATV

3-13

Rev C2 010813

RF2312

20.0

P

OUT

versus P

500 MHz

IN

140.0

120.0

ICCversus Device Voltage

(Pin 8)

Rs=1k
No Rs

3

15.0

(dBm)

10.0

OUT

P

5.0

0.0

AMPLIFIERS

LINEAR CATV

-15.0 -10.0 -5.0 0.0 5.0

PIN(dBm)

Output Third Order Intercept Point (OIP3) versus P

50.0

40.0

30.0

20.0

Output IP3 (dBm)

500 MHz

IN

100.0

80.0

(mA)

CC

I

60.0

40.0

20.0

0.0

4.04.55.05.56.06.57.07.58.0

DeviceVoltage (V)

Output P1dB versus Frequency

25.0

20.0

15.0

10.0

Output P1dB (dBm)

Vcc=5.0V, Rc=22
Vcc=6.0V, Rc=22
Vcc=7.0V, Rc=22
Vcc=8.0V, Rc=22
Vcc=9.0V, Rc=30
Vcc=11.0V, Rc=30, Rs=1k

3-14

10.0

0.0

-15.0 -10.0 -5.0 0.0 5.0

PIN(dBm)

IM3 Products versus P

70.0

60.0

50.0

40.0

30.0

IM3 Products (-dBc)

20.0

10.0

0.0

5.0 10.0 15.0 20.0 25.0

500/501 MHz

P

OUT

OUT

(dBc)

5.0

0.0

0.0 500.0 1000.0 1500.0 2000.0 2500.0

Frequency(MHz)

Rev C2 010813

RF2312

1

-

2

-

3

-

CH1S

2

l

1

C

1

2

3

4

1

2

3

1

-

2

-

3

-

CH1S

12l

1

C212344

1

2

3

CH1 S

C2

START .300 000 MHz STOP 3 000.000 000 MHz

CH1 S

C2

1UFS

11

1UFS

22

4_: 53.809

4_: 19.802

-24.182 3.464 pF
1 900.000 000 MHz

1

4

2

3

-16.739 5.0042pF
1 900.000 000 MHz

_: 97.188

1.5742

_: 93.512

13.215

_: 84.16

22.945

_: 115.2

6.6211

_: 87.551

42.652

_: 52.43

44.855

50 MHz

450MHz

900MHz

50 MHz

450MHz

900MHz

og MAG

1

2

START .300 000 MHz STOP 3 000.000 000 MHz

og MAG

0dB/ REF0dB

1 900.000 000 MHz

4

0dB/ REF0dB

1 900.000 000MHz

_: 14.454 dB

_: 15.372 dB

_: 15.307 dB

450 MHz

_: 15.184 dB

900 MHz

_:-17.966dB

_:-19.908dB

_:-19.87 dB

450 MHz

_:-19.554dB

900 MHz

50 MHz

50 MHz

3

AMPLIFIERS

LINEAR CATV

4

START .300 000 MHz STOP 3 000.000 000 MHz

1

2

3

START .300 000 MHz STOP 3 000.000 000 MHz

Rev C2 010813

3-15

RF2312

3

75 Ohms, ICC = 100 mA, Temp = 25°C

3.0

Swp Max

2.001GHz

0

.

2

0

.

3

0

.

4

0

.

5

0

.

0

1

10.0

5.0

4.0

0

.

0

1

-

0

.

5

-

0

.

4

-

0

.

3

-

0

.

2

-

Swp Min

0.001GHz

8

1.0-1.0

.
0

6

.

0

4

.

0

2

.

0

0

0.2

0.4

0.6

0.8

1.0

2.0

S[2,2]

2

.

0

-

AMPLIFIERS

LINEAR CATV

4

.

0

-

6

.

0

-

S[1,1]

8
.

0

-

75 Ohms, ICC = 110 mA, Temp = 25°C

8

1.0-1.0

.
0

6

.

0

4

.

0

2

.

0

0

0.2

0.4

S[2,2]

2

.

0

-

4

.

0

-

6

.

0

-

0.6

0.8

1.0

2.0

S[1,1]

8
.

0

-

3.0

Swp Max

2.001GHz

0

.

2

0

.

3

0

.

4

0

.

5

0

.

0

1

10.0

5.0

4.0

0

.

0

1

-

0

.

5

-

0

.

4

-

0

.

3

-

0

.

2

-

Swp Min

0.001GHz

3-16

Rev C2 010813