Datasheet RF2311, RF2311PCBA Datasheet (RF Micro Devices)

RF2311

4

Typical Applications

• General Purpose High Bandwidth Gain
Blocks

• IF or RF Buffer Amplifiers

Product Description

The RF2311 is a general purpose, low cost low power RF
amplifierIC.Thedeviceismanufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as an easily cas­cadable 50 Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 1600MHz.
The gain flatness and high bandwidth make the device
suitable for many other applications as well. The device is
self-contained with 50 Ω input and output impedances,
and no external DC biasing elements are required to
operate as specified.

GENERAL PURPOSE AMPLIFIER

• Broadband Test Equipment

• Final PA for Medium Power Applications

• Driver Stage for Power Amplifiers

.004

MIN

.056
.052

.195
.191

.156
.152

1

.240
.232

5°

.017

.050

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

VCC

GND

GND

RF IN

ü

SiGe HBT

1

2

3

4

Si CMOS

8

RF OUT

7

GND

6

GND

5

GND

Functional Block Diagram

.022

.008

.018

Package Style: SOP-8

Features

• DC to well over 1600MHz Operation

• Internally Matched Input and Output

• 14dB Small Signal Gain

• 4.2dB Noise Figure

• +9dBm Output Power

• Single 2.7V to 6V Positive Power Supply

Ordering Information

RF2311 General Purpose Amplifier
RF2311 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev C3 010228

4-81

RF2311

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +6 V
Input RF Power +10 dBm

Operating Ambient Temperature -40 to +85 ° C
Storage Temperature -40 to +150 °C

DC

Caution! ESD sensitive device.

RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

GENERAL PURPOSE

Parameter

Min. Typ. Max.

Overall

Frequency Range DC to 1600 MHz 3dB Bandwidth
Gain 12 14 16 dB V

Noise Figure 4.2 dB V

Input VSWR <1.5:1
Output VSWR <1.3:1 300MHz to 1200MHz

AMPLIFIERS

Output IP

Saturated Output Power +8 +9 dBm 900MHz , V

Reverse Isolation 20 dB

3

Specification

13 dB V

4.0 dB V

+14 +16 dBm 900MHz, VCC=5V

+8 dBm 900MHz, V

+1 dBm 900MHz, VCC=3.6V

Unit Condition

T=25 °C, VCC=5V,Freq=900MHz

=5V

CC

=3.6V

CC

=5V

CC

=3.6V

CC

Power Supply

Operating Voltage 2.7 to 6 V
Operating Current Ra nge 12 17 21 mA V

811mAV

CC
CC

=5V
=3.6V

CC
CC

=3.6V
=5V

4-82

Rev C3 010228

RF2311

Pin Function Description Interface Schematic

1VCC

2GND
3GND

4RFIN

5GND
6GND
7GND
8RFOUT

Power supply pin. An external bypass capacitor is recommended. The
total supply current is shared between this pin and p in 8 (through the
inductor).

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.

Same as pin 2.
RF input pin. This pin is NOT internally DC blocked. A DC blocking

capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil­ity.

Same as pin 2.
Same as pin 2.
Same as pin 2.
RF output pin. Because DC is present on this pin, a DC blocking capac-

itor, suitable for the frequency of operation, should be used in most
applications. The DC voltage on this pin is typically 2.4V. Alternatively,
power supply may be connected to this pin. A series resistor and induc­tor should be used, in which case the L should be large enough to
present a high impedance at the lowest operating frequenc y, and the R
should be (V

8mA and 20mA).

- 2.4) / I, where I is the desired devicecurrent(between

CC

See pin 8.

See pin 8.

VCC

RF OUT

RF IN

4

AMPLIFIERS

GENERAL PURPOSE

Rev C3 010228

4-83

RF2311

VCC=5V

22 pF100 nF

Application Schematic

5V Supply Voltage

1

8

22 pF

RF OUT

4

GENERAL PURPOSE

AMPLIFIERS

RF IN

RF IN

22 pF

22 pF

2

3

4

7

6

5

Application Schematic

2.7V Supply Voltage

VCC= 2.7V

1

2

3

4

8

7

6

5

15Ω-39

100 nH

Ω

22 pF

RF OUT

4-84

Rev C3 010228

Evaluation Board Schemati c

(Download Bill of Materials from www.rfmd.com.)

P1 H3M

P1-1

NC

1

VCC
GND

2
3

RF2311

P1-1
VCC

SMA

J1

IN

C2

µ

F

1

50Ωµstrip

C3

1nF

330 pF

C1

1

2

3

4

Drawing 2311400Rev B

C4

1nF

8

7

6

5

50Ωµstrip

OUT

SMA

J2

4

AMPLIFIERS

GENERAL PURPOSE

Rev C3 010228

4-85

4

RF2311

Evaluation Board Layout

2” x 2”

AMPLIFIERS

GENERAL PURPOSE

4-86

Rev C3 010228