Page 1
RF2310
4
Typical Applications
• General Purpose High Bandwidth Gain
Blocks
• IF or RF Buffer Amplifiers
Product Description
The RF2310 is a general purpose, low-cost, high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as
an easily cascadable 50Ω gain block. Applications
include IF and RF amplification in wireless voice and data
communicationproductsoperating in frequency bands up
to 2500MHz. The gain flatness over a very wide bandwidth makes the device suitable for many applications.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified.
WIDEBAND GENERAL PURPOSE AMPLIFIER
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers
-A-
0.008
0.004
0.018
0.014
0.196
0.189
0.050
8° MAX
0° MIN
0.034
0.016
0.157
0.150
0.244
0.229
Dimensions in mm
0.009
0.007
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
3. Lead coplanarity -
0.068
0.053
mold flash.
0.005 with respect to datum "A".
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
VCC
GND
GND
RF IN
ü
SiGe HBT
1
2
3
4
Si CMOS
8
RF OUT
7
GND
6
GND
5
GND
Functional Block Diagram
Package Style: SOIC-8
Features
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 5dB Noise Figure
• +19dBm Output Power
• Single 3.5V to 6V Positive Power Supply
Ordering Information
RF2310 Wideband GeneralPurpose Amplifier
RF2310 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev C5 010717
4-75
Page 2
RF2310
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +6.0 V
Input RF Power +10 dBm
Storage Temperature -40 to +150 °C
Junction Temperature 175 °C
Thermal Resistance, Junction to
Case
Notes: case reference: pins 5-7,conditions: nosignalin and both RF ports
terminated in 50Ω; average junction temperature measured at 85°C
ambient: 143°C
179 °C/W
DC
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate
at thetime of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Specification
Unit Condition
Operating Range
Overall Frequency Range 100 2500 MHz
Supply Voltage 3.5 6.0 V
Operating Current (I
AMPLIFIERS
Operating Ambient Temperature -40 +85 °C
)2025mAV
CC
40 50 65 mA VCC=5V,Temp=27°C
=3.6V,Temp=27°C
CC
3.6V Performance
Gain 16.2 dB Freq=300MHz, VCC=3.6V,Temp=27°C
Gain 15.3 dB Freq=900MHz, V
Noise Figure 2.5 dB
Output IP3 +22.0 dBm
OP1dB +10 dBm
Gain 15 dB Freq= 1950MHz, V
Noise Figure 2.7 dB
Output IP3 +23.0 dBm
OP1dB +10 dBm
Gain 16 dB Freq= 2450MHz, V
Noise Figure 2.4 dB
Output IP3 +21.0 dBm
OP1dB +10 dBm
=3.6V,Temp=27°C
CC
=3.6V,Temp=27°C
CC
=3.6V,Temp=27°C
CC
5V Performance
Gain 17 dB Freq= 300MHz, VCC=5V,Temp=27°C
Gain 14.0 16.5 dB Freq=900MHz, V
Noise Figure 3 dB
Output IP3 +28.0 +31.0 dBm
OP1dB +17 dBm
Gain 15.6 dB Freq=1950MHz, V
Noise Figure 3.5 dB
Output IP3 +33.0 dBm
OP1dB +18 dBm
Gain 15 dB Freq= 2450MHz, V
Noise Figure 2.8 dB
Output IP3 +26.0 dBm
OP1dB +17 dBm
=5V,Temp=27°C
CC
=5V,Temp=27°C
CC
=5V,Temp=27°C
CC
4-76
Rev C5 010717
Page 3
RF2310
Pin Function Description Interface Schematic
1VCC
Power supply pin. An external bypass capacitor is recommended. The
total supply current is shared between this pin and p in 8 (through the
inductor).
VCC
2GND
3GND
4RFIN
5GND
6GND
7GND
8RFOUT
Ground connection. For best performance, keep traces physically short
and connect immed iately to ground plane.
To achieve the performance as specified, and to minimize instability, it
is recommended to have a local ground plane under the device, as
shown in the evaluation board layout.
Same as pin 2.
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC-coupling of the input is not allowed,becausethis
will override the internal feedback loop and cause temperature instability.
Same as pin 2.
Same as pin 2.
Same as pin 2.
RF output and bias pin. Biasing is accomplished with anexternal choke
inductor to V
quency.B ecause DC is present on this pin, a DC-blocking capacitor,
suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well
bypassed.
that provides high impedance at the operating fre-
CC
Application Schemati c
4
Bias
RF IN
AMPLIFIERS
GENERAL PURPOSE
RF OUT
Rev C5 010717
RF IN
22 pF100 nF
22 pF
VCC=5V
100 nH
1
2
3
4
8
22 pF
7
6
5
RF OUT
4-77
Page 4
4
RF2310
P1-1
V
CC
C2
1nF
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
C4
100 pF
L1
200 nH
1
2
8
C3
7
1nF
C5
330 pF
50 Ωµstrip
C6
1 µF
OUT
P1-3
V
CC
J2
SMA
GENERAL PURPOSE
AMPLIFIERS
J1
SMA
IN
50 Ωµstrip
C1
330 pF
3
4
6
5
2310400A
P1 H3M
P1-1 PC
P1-3 VCC
1
GND
2
3
4-78
Rev C5 010717
Page 5
Evaluation Board Layout
Board Size 2.02” x 2.02”
Board Thickness 0.031”, Board Material FR-4
RF2310
4
AMPLIFIERS
GENERAL PURPOSE
Rev C5 010717
4-79
Page 6
RF2310
4
GENERAL PURPOSE
AMPLIFIERS
S11 Vcc=3V
S11 VCC=3V
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
2.5 GHz
0
0.2
0.4
2GHz
2
.
0
-
4
.
0
-
6
.
0
-
6
.
0
4
.
0
2
.
0
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
1GHz
8
.
0
-
S22 VCC=3V
S22 Vcc=3V
8
.
0
0.6
8
.
0
-
80 MHz
1.0-1.0
1.0
0.8
100 MHz
2.0
1GHz
2.0
1.6 GHz
2GHz
Swp Max
3.005GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.01GHz
Swp Max
3.005GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.01GHz
4
.
0
2
.
0
0
0.2
2
.
0
-
4
.
0
-
4
.
0
2
.
0
0
0.2
2
.
0
-
4
.
0
-
S11 VCC=5V
S11 Vcc=5V
6
.
0
0.4
0.6
6
.
0
-
0
-
S22 VCC=5V
S22 Vcc=5V
6
.
0
0.4
0.6
6
.
0
-
0
-
8
.
0
1GHz
8
.
8
.
0
8
.
1.0-1.0
2.5 GHz
2GHz
1.0
0.8
1.0-1.0
1.0
0.8
200 MHz
100 MHz
50 MHz
1GHz
2GHz
2.0
2.0
2.5 GHz
Swp Max
3.005GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.01GHz
Swp Max
3.005GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.01GHz
S-Parameter Conditions:
All plots are taken at am bient temperature=25°C.
NOTE:
All S11 and S22 plots shown were taken from an RF2310 evaluation board with external input and output tuning components removed and the reference points at the RF IN and RF OUT pins.
4-80
Rev C5 010717
Page 7
RF2310
Gain versus Temperature
17.2
17.0
16.8
16.6
16.4
16.2
Gain (dB)
16.0
15.8
15.6
15.4
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency= 900 MHz
Temperature (°C)
OP1dBversus Temperature
19.0
17.0
15.0
13.0
11.0
OP1dB (dBm)
9.0
Frequency = 900MHz
Vcc=3V
Vcc=5V
OIP3 versus Temperature
36.0
34.0
32.0
30.0
28.0
26.0
OIP3 (dBm)
24.0
22.0
20.0
18.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 900MHz
Temperature (°C)
ICCversus Temperature
Frequency = 900MHz
(mA)
CC
I
67.0
57.0
47.0
37.0
27.0
4
Vcc=3V
Vcc=5V
AMPLIFIERS
GENERAL PURPOSE
7.0
5.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
16.2
16.0
15.8
15.6
15.4
Gain (dB)
15.2
15.0
14.8
14.6
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Rev C5 010717
Temperature (°C)
Gain versus Temperature
Frequency = 1950MHz
Temperature (°C)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
17.0
7.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
OIP3 versus Temperature
36.0
34.0
32.0
30.0
28.0
26.0
OIP3 (dBm)
24.0
22.0
20.0
18.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 1950MHz
Temperature (°C)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
4-81
Page 8
RF2310
4
GENERAL PURPOSE
AMPLIFIERS
OP1dBversus Temperature
21.0
19.0
17.0
15.0
13.0
OP1dB (dBm)
11.0
9.0
7.0
5.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 1950MHz
Temperature (°C)
Gain versus Temperature
16.0
15.5
15.0
14.5
14.0
Gain (dB)
13.5
13.0
12.5
12.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 2450MHz
Temperature (°C)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
ICCversus Temperature
68.0
58.0
48.0
(mA)
38.0
CC
I
28.0
18.0
8.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 1950MHz
Temperature (°C)
OIP3 versus Temperature
31.0
29.0
27.0
25.0
23.0
OIP3 (dBm)
21.0
19.0
17.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 2450MHz
Temperature (°C)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
4-82
OP1dBversus Temperature
19.0
17.0
15.0
13.0
11.0
OP1dB (dBm)
9.0
7.0
5.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 2450MHz
Temperature (°C)
Vcc=3V
Vcc=5V
ICCversus Temperature
67.0
57.0
47.0
(mA)
37.0
CC
I
27.0
17.0
7.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 2450MHz
Temperature (°C)
Rev C5 010717
Vcc=3V
Vcc=5V
Page 9
RF2310
S11 of Evaluation Board versusFrequency
1.9
1.8
1.7
1.6
1.5
1.4
Input VSWR
1.3
1.2
1.1
1.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0
Temperature = +25°C
Frequency(MHz)
Reverse Isolation (S12)of EvaluationBoard versus
-19.5
-20.0
-20.5
-21.0
Frequency,
Temperature = +25°C
Vcc=3V
Vcc=5V
Vcc=3.0V
Vcc=5.0V
S22 of Evaluation Board versusFrequency
5.0
4.5
4.0
3.5
3.0
Output VSWR
2.5
2.0
1.5
1.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0
Temperature = +25°C
Frequency(MHz)
Vcc=3.0V
4
Vcc=5.0V
AMPLIFIERS
GENERAL PURPOSE
-21.5
-22.0
-22.5
Reverse Isolation (dB)
-23.0
-23.5
-24.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0
Frequency (MHz)
Rev C5 010717
4-83
Page 10
4
RF2310
AMPLIFIERS
GENERAL PURPOSE
4-84
Rev C5 010717
Loading...