Datasheet RF2308, RF2308PCBA Datasheet (RF Micro Devices)

RF2308

4

Typical Applications

• General Purpose Broadband Gain Blocks

• IF or RF Buffer Amplifiers

• Driver Stage for Power Amplifiers

Product Description

The RF2308 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro­cess, and has been designed for use as an easily-cas­cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 4000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as s pecified.

GENERAL PURPOSE AMPLIFIER

• Final PA for Low Power Applications

• Portable Battery Powered Equipment

• Broadband Test Equipment

.004

MIN

.056
.052

.195
.191

1

.156
.152

.240
.232

.017

.050

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

RF IN

GND

GND

GND

ü

SiGe HBT

1

2

3

4

Si CMOS

8

RF OUT

7

GND

6

GND

5

GND

5°

.022

.008

.018

Package Style: SOP-8

Features

• DC to 4000MHz Operation

• Internally matched Input and Output

• 12dB Small Signal Gain

• 5dB Noise Figure

• 20mW Linear Output Power

• Single Positive Power Supply

Ordering Information

RF2308 General Purpose Amplifier
RF2308 PCBA Fully Assembled Evaluation Board

Functional Block Diagram

Rev B2 010228

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

4-71

RF2308

Absolute Maximum Ratings

Parameter Rating Unit

SupplyCurrent 65 mA
Input RF Power +10 dBm
Operating Ambient Temperature -40 to +85 ° C
Storage Temperature -40 to +150 °C

Caution! ESD sensitive device.

RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

GENERAL PURPOSE

Parameter

Min. Typ. Max.

Overall

Frequency Range DC to 4000 MHz
Gain 10 11.7 12.5 dB Freq=1000MHz

Noise Figure 5 dB
Input VSWR <2:1
Output VSWR <2:1
Output IP

AMPLIFIERS

Output P
Saturated Output Power +15 dBm

Reverse Isolation >15 dB

3

1dB

Specification

10.2 11.9 12.7 dB Freq=100MHz

+23 dBm
+13 dBm

Unit Condition

T=25°C, VCC=4.3V, RC=22Ω,
Freq=1000MHz

Power Supply

Operating Voltage 3.7 V At pin 8
Operating Current 28 35 42 mA V

Operating Current Range 20 to 65 mA

CC

=4.3V, RC=22Ω

4-72

Rev B2 010228

RF2308

Pin Function Description Interface Schematic

1RFIN

2GND
3GND

4GND
5GND
6GND
7GND
8RFOUT

RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil­ity.

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.

Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 2.
Same as pin 2.
RF output and bias pin.B iasing isaccomplished withanexternalseries

resistor and chokei nductorto V
current into this pin to a desired level. At room temperature, this pin will

bias itself to 3.7V as long as the current is held between 20 and 65mA.
Thus the resistor value is determ ined by the following equation:

R

=

Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 65 mA over the planned oper­ating temperature. This means that a resistor between the supply

and this pin is always required, even if a supply near 3.7V is available.
Because DC is present on this pin, a DCblocking capacitor, suitable for
the frequency of operation, should be used in mos t applications. The
supply side of the bias network should also be well bypassed.

. The resistorischosento set the DC

CC

V

SUPPLY

--------------------------------------- -

3.7–()

I

CC

FIN

4

RF OUT

AMPLIFIERS

GENERAL PURPOSE

RF IN

Application Schemati c

22 pF

1

2

3

4

VCC=5V

10 nF 22 pF

8

7

6

5

47 nH

22

Ω

22 pF

RF OUT

Rev B2 010228

4-73

RF2308

Evaluation Board Schema t ic

(Download Bill of Materials from www.rfmd.com.)

4

GENERAL PURPOSE

AMPLIFIERS

RF IN
(50

P1

NC

P1-3

SMA

J1

50Ωµstrip 50Ωµstrip

Ω

)

C1

100 pF

1
2

GND

VCC

3

1

2

3

4

2308400 RevB

R1

Ω

27

L1
47 nH

8

7

6

5

C3
100 pF

C2

100 pF

C4
10 nF

P1-3

SMA

J2

RF OUT

(50

Ω

)

Evaluation Board Layout

Uses same board as RF2306

1.27” x 1.02”

4-74

Rev B2 010228