Datasheet RF2307, RF2307PCBA Datasheet (RF Micro Devices)

Page 1
RF2307
4
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
Product Description
The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro­cess, and has been designed for use as an easily-cas­cadable 50gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50input and output impedances and requires only two external DC biasing elements to operate as s pecified.
GENERAL PURPOSE AMPLIFIER
• Final PA for Low Power Applications
• Portable Battery Powered Equipment
• Broadband Test Equipment
.004
MIN
.056 .052
.195 .191
1
.156 .152
.240 .232
.017
.050
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS
RF IN
GND
GND
GND
ü
SiGe HBT
1
2
3
4
Si CMOS
8
RF OUT
7
GND
6
GND
5
GND
.022
.008
.018
Package Style: SOP-8
• DC to 3000MHz Operation
• Internally matched Input and Output
• 15dB Small Signal Gain
• 4dB Noise Figure
• 25mW Linear Output Power
• Single Positive Power Supply
Ordering Information
RF2307 General Purpose Amplifier RF2307 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
Rev B2 010228
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-67
Page 2
RF2307
Absolute Maximum Ratings
Parameter Rating Unit
SupplyCurrent 65 mA Input RF Power +10 dBm Operating Ambient Temperature -40 to +85 ° C Storage Temperature -40 to +150 °C
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate at the time of this printing. However,RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Overall
Frequency Range DC to 3000 MHz Gain 14.2 15.2 16.2 dB Freq=1000MHz
Noise Figure 4 dB Input VSWR <2:1 Output VSWR <2:1 Output IP
AMPLIFIERS
Output P Saturated Output Power +15 dBm
Reverse Isolation >18 dB
3
1dB
Specification
14.7 15.7 16.7 dB Freq=100MHz
+24 dBm
+10 +14 dBm
Unit Condition
T=25°C, VCC=5.0V, RC=22Ω, Freq=1000MHz
Power Supply
Operating Voltage 3.7 V At pin 8 Operating Current 40 50 60 mA V
Operating Current Range 20 to 65 mA
CC
=5.0V, RC=22
4-68
Rev B2 010228
Page 3
RF2307
Pin Function Description Interface Schematic
1RFIN
2GND 3GND
4GND 5GND 6GND 7GND 8RFOUT
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil­ity.
Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.
Same as pin 2. Same as pin 2. Same as pin 2. Same as pin 2. Same as pin 2. RF output and bias pin.B iasing isaccomplished withanexternalseries
resistor and chokei nductorto V current into this pin to a desired level. At room temperature, this pin will
bias itself to 3.7V as long as the current is held between 20mA and 65mA. Thus the resistor value is determined by the following equation:
R
=
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 65 mA over the planned oper­ating temperature.This means that a resistor between the supply and
this pin is alwaysrequired, even if a supply near 3.7V is available. Because DC is present on this pin, a DCblocking capacitor, suitable for the frequency of operation, should b e used in most applications. The supply side of the bias network should also be well bypassed.
. The resistorischosento set the DC
CC
V
SUPPLY
--------------------------------------- -
3.7()
I
CC
RF IN
4
RF OUT
AMPLIFIERS
GENERAL PURPOSE
RF IN
Application Schemati c
22 pF
1
2
3
4
VCC=5V
10 nF 22 pF
8
7
6
5
47 nH
22
22 pF
RF OUT
Rev B2 010228
4-69
Page 4
RF2307
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
4
GENERAL PURPOSE
AMPLIFIERS
RF IN (50
P1
NC
P1-3
SMA
J1
50Ωµstrip 50Ωµstrip
)
C1
100 pF
1 2
GND VCC
3
1
2
3
4
2307400 RevB
R1
27
L1 47 nH
8
7
6
5
C3 100 pF
C2
100 pF
C4 10 nF
P1-3
SMA
J2
RF OUT
(50
)
Evaluation Board Layout
Uses same board as RF2306
1.27” x 1.02”
4-70
Rev B2 010228
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