Datasheet RF2306, RF2306PCBA Datasheet (RF Micro Devices)

RF2306

4

Typical Applications

• Broadband, Low Noise Gain Blocks

• IF or RF Buffer Amplifiers

• Driver Stage for Power Amplifiers

Product Description

The RF2306 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro­cess, and has been designed for use as an easily-cas­cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 2000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as s pecified.

GENERAL PURPOSE AMPLIFIER

• Final PA for Low Power Applications

• Portable Battery Powered Equipment

• Broadband Test Equipment

.004

MIN

.056
.052

.195
.191

.156
.152

1

.240
.232

5°

.017

.050

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

RF IN

GND

GND

GND

ü

SiGe HBT

1

2

3

4

Si CMOS

8

RF OUT

7

GND

6

GND

5

GND

Functional Block Diagram

.022

.008

.018

Package Style: SOP-8

Features

• DC to 2000MHz Operation

• Internally matched Input and Output

• 20dB Small Signal Gain

• 3.5dB Noise Figure

• 10mW Linear Output Power

• Single Positive Power Supply

Ordering Information

RF2306 General Purpose Amplifier
RF2306 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev B2 000228

4-63

4

GENERAL PURPOSE

RF2306

Absolute Maximum Ratings

Parameter Rating Unit

SupplyCurrent 65 mA
Input RF Power +10 dBm
Operating Ambient Temperature -40 to +85 ° C
Storage Temperature -40 to +150 °C

Parameter

Min. Typ. Max.

Specification

RF Micro Devices believes thefurnished information iscorrect andaccurate
at thetime of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

Unit Condition

Overall

Frequency Range DC to 2000 MHz
Gain 18 19.5 22 dB Freq=1000MHz

19.5 21 23.5 dB Freq=100MHz
Noise Figure 3.5 dB
Input VSWR <2:1 In a 50Ω system
Output VSWR <2:1 In a 50Ω system
Output IP

AMPLIFIERS

Output P
Saturated Output Power +15 dBm

Reverse Isolation >20 dB

3

1dB

+10 +12 dBm

+20 dBm

Power Supply

Operating Voltage 3.7 V At pin 8
Operating Current 28 35 42 mA V

Operating Current Range 20 to 65 mA

Caution! ESD sensitive device.

T=25°C, VCC=4.3V, RC=22Ω,
Freq=1000MHz

CC

=4.3V, RC=22Ω

4-64

Rev B2 000228

RF2306

Pin Function Description Interface Schematic

1RFIN

2GND
3GND

4GND

RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil­ity.

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.

Same as pin 2.
Same as pin 2.

5GND
6GND
7GND
8RFOUT

Same as pin 2.

Same as pin 2.

Same as pin 2.

RF output and bias pin.B iasing isaccomplished withanexternalseries
resistor and choke inductor to V

DC current into this pin to a desired level. At room temperature, this pin
will bias itself to 3.7V as long as the current is held between 20mA and
65mA. Thus the resistor value is determined by the following equation:

Care should also be taken in the resistor selection to ensure that the

current into the part never exceeds 65 mA over the planned oper­ating temperature.This means that a resistor between the supply and

this pin is alwaysrequired, even if a supply near 3.7V is available.
Because DC is present on this pin, a DCblocking capacitor, suitable for
the frequency of operation, should b e used in most applications. The
supply side of the bias network should also be well bypassed.

. The resistor is selected to set the

CC

V

SUPPLY

--------------------------------------- -

R

=

3.7–()

I

CC

Application Schemati c

VCC= 4.3V

RF IN

4

RF OUT

AMPLIFIERS

GENERAL PURPOSE

Rev B2 000228

RF IN

22 pF

10 nF 22 pF

47 nH

22

Ω

1

2

3

4

8

22 pF

7

6

5

RF OUT

4-65

RF2306

Evaluation Board Schema t ic

(Download Bill of Materials from www.rfmd.com.)

4

GENERAL PURPOSE

AMPLIFIERS

RF IN
(50

P1

NC

P1-3

SMA

J1

50Ωµstrip 50Ωµstrip

Ω

)

C1

100 pF

1
2

GND
VCC

3

1

2

3

4

2306400 RevB

R1

Ω

33

L1
47 nH

8

7

6

5

C3
100 pF

C2

100 pF

C4
10 nF

P1-3

SMA

J2

RF OUT

(50

Ω

)

Evaluation Board Layout

1.27” x 1.02”

4-66

Rev B2 000228