Page 1
RF2304
4
Typical Applications
• Receive or Transmit Low-Noise Amplifiers
• FDD and TDD Communication Systems
• Commercial and Consumer Systems
Product Description
The RF2304 is a low-noise small-signal amplifier. The
device is manufactured on a low-cost Gallium Arsenide
MESFET process, and has been designed for use as a
gain block in high-end communication systems operating
from less than 300MHz to above 2.5GHz. With +6dBm
output power, it may also be used as a driver in transmitter applications,or in highly linear receivers.Thedevice is
packaged in an 8-lead plastic package and is self-contained, requiring just an inductor and blocking capacitors
to operate. The +6dBm output power, combined with the
1.8 dB noise figure at 900MHz allows excellent dynamic
range for a variety of receive and transmit applications.
GENERAL PURPOSE LOW-NOISE AMPLIFIER
• Portable Battery Powered Equipment
•WirelessLAN
• ISM Band Applications
-A-
0.008
0.004
0.018
0.014
0.196
0.189
0.050
8° MAX
0° MIN
0.034
0.016
0.157
0.150
0.244
0.229
Dimensions in mm
0.009
0.007
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
3. Lead coplanarity -
0.068
0.053
mold flash.
0.005 with respect to datum "A".
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
GND
GND
RF IN
GND
1
2
3
4
SiGe HBT
ü
Si CMOS
NC
8
VDD
7
RF OUT
6
GND
5
Functional Block Diagram
Package Style: SOIC-8
Features
• Single 2.7V to 6.0V Supply
• 6dBm Output Power
• 8dB Small Signal Gain at 900MHz
• 1.8dB Noise Figure at 900MHz
• Low DC Current Consumption of 5mA
• 300MHz to 2500MHz Operation
Ordering Information
RF2304 General P u rpose Low-Noise Amplifier
RF2304 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 010717
4-57
Page 2
RF2304
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (VDD) -0.5 to +6.5 V
DC Current 40 mA
Input RF Power +10 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
DC
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Specification
Unit Condition
Operating Range
Overall Frequency Range 300 2500 MHz
Supply Voltage 2.7 6.0 V
Operating Current (I
Operating Ambient Temperature -40 +85 °C
)8.4mAV
CC
71126mAV
=3V, Temp=27°C
CC
=5V, Temp=27°C
CC
3V Performance
AMPLIFIERS
Gain 11.7 dB Freq=300MHz, VCC=3V, Temp=27°C
Gain 8.5 dB Freq=900MHz, V
Noise Figure 1.9 dB
Input IP3 +6.9 dBm
OP1dB +7.5 dBm
Gain 9.2 dB Freq=1950MHz, V
Noise Figure 1.7 dB
Input IP3 +8.6 dBm
OP1dB +6.9 dBm
Gain 8.2 dB Freq=2450MHz, V
Noise Figure 1.7 dB
Input IP3 +10.5 dBm
OP1dB +7.5 dBm
=3V, Temp=27°C
CC
=3V, Temp=27°C
CC
=3V, Temp=27°C
CC
5V Performance
Gain 12.5 dB Freq=300MHz, VCC=5V, Temp=27°C
Gain 10 12 14 dB Freq=900MHz, VCC=5V, Temp=27°C
Noise Figure 1.9 dB
Input IP3 +8.4 dBm
OP1dB +8.7 dBm
Gain 9.8 dB Freq=1950MHz, V
Noise Figure 1.9 dB
Input IP3 +10.0 dBm
OP1dB +8 dBm
Gain 6 8 11 dB Freq=2450MHz, V
Noise Figure 1.6 dB
Input IP3 +8.0 dBm
OP1dB +6 dBm
=5V, Temp=27°C
CC
=5V, Temp=27°C
CC
4-58
Rev A5 010717
Page 3
RF2304
Pin Function Description Interface Schematic
1GND
2GND
3RFIN
4GND
5GND
6RFOUT
Ground connection. For best performance, keep traces physically short
and connect immed iately to ground plane.
Same as pin 1.
DC coupled RF input. A broadband impedance match is produced by
internal shunt resistive feedback. The DC level is approximately
200mV. If a DC path exists in the connected circuitry, an external DCblocking capacitor is required to properly maintain the DC operating
point.
Same as pin 1.
Same as pin 1.
RF output. A broadband impedance match is produced by internal
shunt resistive feedback. The DC connection to the power supply is
provided through an external chip inductor having greater than 150Ω
reactance at the operating frequency. An external DC-blocking capacitor is required if the following circuitry is not DC-blocked.
RF IN
V
DD
RF OUT
4
7VDD2
8NC
Bias control connection. This pin is normally connected to the power
supply,but can be used to switch the amplifier on and off by switching
between power supply voltage and ground. This pin sinks approximately 600µA when connected to V
when grounded.
No connection.
RF IN
100 pF
, and sources less than 10µA
DD
Application Schemati c
1
2
3
4
8
7
6
5
V
DD
L1
RF Choke
AMPLIFIERS
GENERAL PURPOSE
1nF
100 pF
Rev A5 010717
4-59
Page 4
RF2304
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
4
GENERAL PURPOSE
AMPLIFIERS
P1-1 VCC
NC
J1
RF IN
P1
1
2
3
50 Ωµstrip
GND
C1
100 pF
C3
1nF
1
2
3
4
2304400B
8
7
6
5
Evaluation Board Layout
1.43” x 1.43”
C4
1nF
L1
82 nH
C2
100 pF
50 Ωµstrip
P1-1
J2
RF OUT
4-60
Rev A5 010717
Page 5
Typical Characteristics - f=900 MHz
RF2304
25
20
Gain
15
mA
10
Idd
5
0
33.544.55
P1dB
NF
Vdd (V)
15
12
9
dB, dBm
6
3
0
Typical Characteristics - VDD=5.0V
4
AMPLIFIERS
GENERAL PURPOSE
20
18
16
14
12
10
Gain (dB)
8
6
4
2
0
0 500 1000 1500 2000 2500 3000
Frequency (MHz)
10
9
8
7
6
5
4
Noise Figure (dB)
3
2
1
0
Rev A5 010717
4-61
Page 6
RF2304
4
GENERAL PURPOSE
AMPLIFIERS
S11 VCC=3V
S11 Vcc=3V
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0.2
2
.
0
-
4
.
0
-
4
.
0
2
.
0
4GHz
3GHz
0.4
6
.
0
-
S22 Vcc=3V
6
.
0
1.0
0.6
0.8
2GHz
1GHz
8
.
0
-
S22 VCC=3V
8
.
1.0-1.0
0
2.0
300 MHz
4GHz
Swp Max
0
.
2
3.0
0
.
0
.
2
6GHz
4
.
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
2
-
Swp Min
0.01GHz
Swp Max
6GHz
0
.
3
0
.
4
0
.
5
0
.
0
1
0
2
.
0
0
0.2
2
.
0
-
4
.
0
-
4
.
0
2
.
0
S11 VCC=5V
S11 Vcc=5V
8
6
.
0
4GHz
3GHz
0.4
0.6
6
.
0
-
0
-
S22 VCC=5V
S22 Vcc=5V
8
6
.
0
.
0
2GHz
8
.
.
0
0.8
1GHz
1.0-1.0
1.0
1.0-1.0
2.0
100 MHz
4GHz
Swp Max
0
.
2
3.0
0
.
2
0
.
2
6GHz
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
-
Swp Min
0.01GHz
Swp Max
6GHz
0
.
3
0
.
4
0
.
5
0
.
0
1
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
1GHz
8
.
0
-
2.0
100 MHz
3.0
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.01GHz
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
1GHz
2.0
100 MHz
3.0
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.01GHz
S-Parameter Conditions:
All plots are taken at ambient temperature =25°C.
NOTE:
All S11 and S22 plots shown were taken from an RF2304 evaluation board with external input and output tuning components removed and the reference points at the RF IN and RF OUT pins.
4-62
Rev A5 010717
Page 7
RF2304
Gain versus Temperature
12.0
11.8
11.6
11.4
11.2
11.0
Gain (dB)
10.8
10.6
10.4
10.2
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency= 900 MHz
Temperature (°C)
OP1dBversus Temperature
11.0
10.0
9.0
8.0
OP1dB (dBm)
7.0
6.0
5.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 900MHz
Temperature (°C)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
IIP3 versus Temperature
9.0
8.5
8.0
7.5
IIP3 (dBm)
7.0
6.5
6.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 900MHz
Temperature (°C)
ICCversus Temperature
12.0
11.5
11.0
10.5
10.0
(mA)
9.5
CC
I
9.0
8.5
8.0
7.5
7.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 900MHz
Temperature (°C)
Vcc=3V
4
Vcc=5V
AMPLIFIERS
GENERAL PURPOSE
Vcc=3V
Vcc=5V
10.6
10.4
10.2
10.0
9.8
9.6
Gain (dB)
9.4
9.2
9.0
8.8
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Rev A5 010717
Gain versus Temperature
Frequency = 1950MHz
Temperature (°C)
Vcc=3V
Vcc=5V
IIP3 versus Temperature
21.0
20.5
20.0
19.5
19.0
IIP3 (dBm)
18.5
18.0
17.5
17.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 1950MHz
Temperature (°C)
Vcc=3V
Vcc=5V
4-63
Page 8
RF2304
4
GENERAL PURPOSE
AMPLIFIERS
OP1dBversus Temperature
11.0
10.0
9.0
8.0
OP1dB (dBm)
7.0
6.0
5.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 1950MHz
Temperature (°C)
Gain versus Temperature
9.5
9.0
8.5
Gain (dB)
8.0
7.5
7.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 2450MHz
Vcc=3V
Vcc=5V
Temperature (°C)
Vcc=3V
Vcc=5V
ICCversus Temperature
12.0
11.5
11.0
10.5
(mA)
10.0
CC
I
9.5
9.0
8.5
8.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 1950MHz
Temperature (°C)
IIP3 versus Temperature
22.0
21.5
21.0
20.5
20.0
19.5
IIP3 (dBm)
19.0
18.5
18.0
17.5
17.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 2450MHz
Temperature (°C)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
4-64
OP1dBversus Temperature
12.0
11.0
10.0
9.0
8.0
OP1dB (dBm)
7.0
6.0
5.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 2450MHz
Temperature (°C)
Vcc=3V
Vcc=5V
ICCversus Temperature
12.0
11.5
11.0
10.5
10.0
(mA)
9.5
CC
I
9.0
8.5
8.0
7.5
7.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Frequency = 2450MHz
Temperature (°C)
Rev A5 010717
Vcc=3V
Vcc=5V
Page 9
RF2304
S11 of Evaluation Board versusFrequency
3.0
2.5
2.0
1.5
Input VSWR
1.0
0.5
0.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0
Temperature = +25°C
Frequency(MHz)
Reverse Isolation (S12)of EvaluationBoard versus
-18.0
-18.2
-18.4
Frequency,
Temperature = +25°C
Vcc=3V
Vcc=5V
S22 of Evaluation Board versusFrequency
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Output VSWR
0.6
0.4
0.2
0.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0
Temperature = +25°C
Frequency(MHz)
4
Vcc=3.0V
Vcc=5.0V
AMPLIFIERS
GENERAL PURPOSE
-18.6
-18.8
Reverse Isolation (dB)
-19.0
-19.2
0.0 500.0 1000.0 1500.0 2000.0 2500.0
Frequency (MHz)
Vcc=3.0V
Vcc=5.0V
Rev A5 010717
4-65
Page 10
4
RF2304
AMPLIFIERS
GENERAL PURPOSE
4-66
Rev A5 010717
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