Datasheet RF2302, RF2302PCBA-H, RF2302PCBA-L Datasheet (RF Micro Devices)

RF2302

4

Typical Applications

• CDMA Cellular/PCS and JCDMA Systems

• TDMA Cellular/PCS Systems

• GSM Systems

Product Description

The RF2302 is a broadband linear variable gain amplifier
that was designed specifically for digital communications
systems that require linear amplification over a wide gain
control range.ItissuitableforuseinCDMA or TDMA sys­tems in the cellular or PCS band, in DAMPS systems,
and in PDC systems. Operating supply voltage ranges
from 3V to 6V. The device operates over a large fre­quency band, from 100MHz to 2000MHz, and is tuned to
a specific frequency band with an output bias feed induc­tor and blocking capacitor. Bias optimization may be
achieved by adjusting the voltage to pin 8 (PD). The IC is
manufactured on an advanced Gallium Arsenide Hetero­junction Bipolar Transistor (GaAs HBT) process and is
featured in a new standard miniature 8-lead plastic
MSOP package.

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

Si CMOS

od

r

P

ed

BROADBAND LINEAR

VARIABLE GAI N AMPLIFIER

• Wireless Local Loop Systems

• Wideband CDMA Systems

• PDC Systems (950MHz and 1450MHz)

0.006

+ 0.003

A

0.034

6° MAX

0° MIN

0.192

+ 0.008

0.118

+ 0.004 sq.

0.021

RF2

+ 0.004

0.012

0.0256

6

37

0.006

+ 0.002

NOTES:

1. Shaded leadis pin 1.

2. All dimensionsare exclusive of flash,
protrusionsor burrs.

3. Lead coplanarity: 0.002 with respect
to datum "A".

ct

u

Features

• 25dB Linear G ain Control range

• +14dBm OP1dB at 3.5 V (836MHz)

•Single3Vto6VSupply

Package Style: MSOP-8

4

AMPLIFIERS

GENERAL PURPOSE

1

RF IN

2

VCC

3

GND

4

GND

S

Functional Block Diagram

Rev A8 010410

ee

rad

Upg

8

PD

7

RF OUT

6

GND

5

GC

• 14dB Max Gain at 836MHz

• 10dB Max Gain at 1900MHz

• 4dB Noise Figure at 836MHz

Ordering Information

RF2302 Broadband LinearVariable Gain Amplifier
RF2302 PCBA-L Fully Assembled EvaluationBoard 836MHz
RF2302 PCBA-H Fully Assembled Evaluation Board 1.88GHz

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

4-43

RF2302

Absolute Maximum Rat ings

Parameter Rating Unit

Supply Voltage 0 to +8.0 V
Power Down Voltage 0 to +3.1 V
Gain Control Voltage 0 to +3.1 V
DC Current 100 mA

Output Load VSWR 12:1
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C

DC
DC
DC

Caution! ESD sensitive device.

RF Micro Devices believes thefurnished information iscorrect andaccurate
at thetime of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

GENERAL PURPOSE

Parameter

Overall

RF Frequency Range 100 2000 MHz
Small Signal Maximum Gain 13 14 15 dB Freq=836MHz, V

Small Signal M inimum Gain -22 -20 -19 dB Freq=836MHz, V

AMPLIFIERS

Noise Figure 4 dB Freq=836MHz, V

Linear Gain Control Range 32 34 dB V
Gain Control Slope 1 3 V/V Slope=∆Output peak voltage/∆V
Input IP3 +11 +12.5 dBm Freq=836 MHz, VGC=2.2V

Input VSWR 1.8:1 3:1 In 50Ω system
Output VSWR 2.5:1 In 50Ω system

TDMA

ACPR -33 -34 dBc 836MHz , VGC=2.2V

ALT1 -63 -68 dBc 836MHz, VGC=2.2V

CDMA

ACPR -50 -52 dBc 836MHz , VGC=2.2V

ALT1 -55 -57 dBc 836MHz, V

Power Supply

Supply Voltage 3 6 V
Power Down Voltage High 2.7 2.9 V
Power Down Voltage Low 1.0
DC Current Consumption 40 50 55 mA V

Current 7 9 mA VPD=2.8V, VGC=2.2V, VCC=3.0V

V

PD

VGCCurrent 16 18 µAVPD=2.8V, VGC=2.2V, VCC=3.0V
Power Down Current 10 µAV
Turn On/Off Time 100 nS

ee

S

Upg

Min. Typ. Max.

Specification

9 11 12 dB Freq=1880MHz, V

-30 -29 -27 dB Freq=1880MHz, V

7 dB Freq=1880MHz, V

+10 +11 dBm Freq=1880 MHz, VGC=2.2V

-1 +1 dBm Freq=836MHz, V

+1 +3 dBm Freq=1880MHz , V

Unit Condition

VCC=3.0V, VPD=2.8V, VGC=2.2V,T=25°C

GC

GC

GC

GC

6

GC

37

=1.4V to 2.2V

GC

GC

RF2

GC

ct

GC

u

od

r

P

-34 -35 dBc 1880M Hz, V

-73 -75 dBc 1880M Hz, V

GC

GC

=2.2V

=2.2V

ed

-55 -59 dBc 1880M Hz, V

rad

T=25°C

=3.0V, VPD=2.8V, VGC=1.4V to 2.2V

CC

<1V, VGC<1V

PD

GC

GC

=2.2V

=2.2V

=2.2V

=2.2V

=1.4V

=1.4V

=2.2V

=2.2V

GC

=1.4V

=1.4V

4-44

Rev A8 010410

RF2302

Pin Function Description Interface Schematic

1RFIN
2VCC

3GND
4GND

5GC

6GND
7RFOUT

8PD

RF input pin. This pin is DC coupled and requires a blocking capacitor.
Power supply. This pin is connected to a battery or a regulated supply

and requires a bypass capacitor as close to the pin as possible.
Ground connection. Keep traces physically short and connect immedi-

ately to ground plane for best performance.
Ground connection. Keep traces physically short and connect immedi-

ately to ground plane for best performance. Use a separate ground via
for this pin.

Analog gain control pin. This pin controls the gain of the IC. Minimum
gain occurs atV

25dB of linear gain control with no variation of input P
and additional attenuation is possible with V
variation. Bypass this pin near the device.
Same as pin 3.

RF output pin. This pin is DC coupled and requires VCCthrough a bias
inductor sized accordingly to provide a high pass transformation with a

series capacitor. ThisLC transformation setsthe output load line for the
amplifier. If this amplifier is driving a power amplifier or antenna, no
additional matching is required. However, to improve the output match,
a parallel resistor can be added across the inductor. For 836MHz appli­cations use a 10nH bias inductor (optional resistor R3=100 ohms) and

2.7pF coupling capacitor. For 1900MHz applications use a 2.7nH bias
inductor (optional resistor R3=150ohms) and 1.0pF coupling capacitor.

Power down pin. This pin provides bias for the amplifier.To turn the
amplifier on, th is pin should be at 2.8V. Reducing this voltage below

0.5V ensures that the amplifier will draw less than 10µA current from
the supply. Additionally, bias current can be optimized for lower output
power by adjusting this voltage over a 2.7V to 2.9V range from a regu­lated supply.

<1V and maximum gain isachieved with VGC=2.2V.

GC

<1V with input P

GC

is available,

1dB

RF2

1dB

37

6

4

AMPLIFIERS

GENERAL PURPOSE

ct

Evaluation Board Schematic - 836MHz or 1900MHz

(Download Bill of Materials from www.rfmd.com.)

P1-1

P1-3

P1

1

GC
GND

2

VCC

3

P1-1

P1-3

P2

1
2
3

PD

P

GND
VCC

r

u

od

R3

VCC

L1

C3

1nF

C12

1

µ

F

ed

C6

rad

C9

15 pF

12

3.3

2302400-, 401-

1

2

3

4

100
150

10

2.7

8

7

C4

6

5

2.7
1

C1

22 pF

50Ωµstrip

C11
1nF

C14

1

µ

PD

RF OUT

J2

GC

F

ee

S

RF IN

J1

VCC

50Ωµstrip

Upg

C13
1

µ

F

Board R3 (Ω)C6 (pF) C4 (pF)L1(nH)
L (836 MHz)

H (1900 MHz)

Rev A8 010410

4-45

4

GENERAL PURPOSE

RF2302

Evaluation Board Layout 836MHz

Board Size 2.0” x 2.0”

Evaluation Board Layout 1.88GHz

AMPLIFIERS

6

ee

S

Upg

rad

ed

37

RF2

ct

u

od

r

P

4-46

Rev A8 010410

RF2302

Gain @3.3, 3.0, 2.7V versus V

(Frequency 1880MHz @ -8dBm, IS-95 Mod. VPD=2.8V,

15.0

10.0

5.0

0.0

-5.0

-10.0

Gain (dB)

-15.0

-20.0

-25.0

-30.0

-35.0

1.4 1.6 1.8 2.0 2.2

(Frequency1880MHz @ -8dBm,VCC=3.0V, VPD=2.8V)

(uA)

GC

I

30.0

25.0

20.0

15.0

10.0

5.0

Igc [UA] @25 C
Igc [UA] @ -40 C
Igc [UA] @ 85 C

V

=2.2to 1.4V)

GC

VGC(V)

IGCversus V

GC

GC

Gain @ 3.3 V
Gain @3.0 V
Gain @ 2.7 v

(Frequency 836MHz @ -6dBm, IS-95 Mod., VCC=3.0V, VPD=2.8V,

20.0

15.0

10.0

5.0

0.0

-5.0

Gain (dB)

-10.0

-15.0

-20.0

-25.0

1.4 1.6 1.8 2.0 2.2

25.0

20.0

15.0

Gain @3.3, 3.0, 2.7V versus V

V

=2.2 to 1.4V)

GC

Gain @ 3.3 V
Gain @ 3.0 V
Gain @ 2.7 V

VGC(V)

(Frequency 836MHz @ -6dBm, VCC=3.0V, VPD=2.8V)

Igc [UA] @25 C
Igc [UA] @ -40 C
Igc [UA] @ 85 C

IGCversus V

37

GC

6

RF2

(uA)

10.0

GC

I

ct

5.0

u

GC

4

AMPLIFIERS

GENERAL PURPOSE

0.0

-5.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

8.0
Ipd [mA] @25 C

Ipd [mA] @ - 40 C
Ipd [mA] @ 85 C

S

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

(mA)

PD

I

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

-1.0

Rev A8 010410

VGC(V)

IPDversus V

(Frequency 1880MHz,VCC=3.0V,VGC=2.2V)

PD

ed

rad

Upg

ee

VPD(V)

P

od

r

0.0

-5.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

(Frequency 836MHz @ -6 dBm, VCC=3.0V, VGC=2.2V)

8.0

7.0

6.0

5.0

4.0

(mA)

PD

3.0

I

2.0

1.0

0.0

-1.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

Ipd [mA] @25 C
Ipd [mA] @ - 40 C
Ipd [mA] @ 85 C

VGC(V)

IPDversus V

VPD(V)

PD

4-47

RF2302

4

GENERAL PURPOSE

AMPLIFIERS

(Frequency 836MHz@ -6dBm, IS-95 Mod.,VCC=3.0V,VPD=2.8V,

20.0

15.0

10.0

5.0

0.0

-5.0

Gain (dB)

-10.0

-15.0

-20.0

-25.0

20.0

15.0

10.0

5.0

0.0

-5.0

Gain (dB)

-10.0

-15.0

-20.0

-25.0

0.0

-10.0

-20.0

-30.0

-40.0

ACPR(dBc)

-50.0

-60.0

-70.0

Gain @ - 40C
Gain @ 25C
Gain @ 85C

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

(Frequency 836MHz @ -6dBm, NADC. Mod., VCC=3.0V,

Gain @ - 40C
Gain @ 25C
Gain @ 85C

1.01.21.41.61.82.02.2

(Frequency 1880MHz @ -8dBm, IS-95 Mod., VCC=3.0V, VPD=2.8V

ACPR @25C
ACPR @-40C
ACPR @85C

ee

S

Gain versus V

=2.2 to 1.0V)

V

GC

Gain versus V

V

PD

ACPR versus V

Upg

VGC(V)

=2.8V)

VGC(V)

GC

GC

GC

rad

ed

P

od

r

(Frequency 1880MHz @ -8dBm, IS-95 Mod., VCC=3.0V, VPD=2.8V

15.0

10.0

5.0

0.0

-5.0

-10.0

Gain (dB)

-15.0

-20.0

-25.0

-30.0

-35.0

15.0

10.0

5.0

0.0

-5.0

-10.0

Gain (dB)

ct

-15.0

u

-20.0

-25.0

-30.0

-35.0

0.0

-10.0

-20.0

-30.0

-40.0

ACPR (dBc)

-50.0

-60.0

Gain @ - 40C
Gain @ 25C
Gain @ 85C

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

(Frequency 1880MHz @ -8dBm, NADC Mod.VCC=3.0V,

Gain @ - 40C
Gain @ 25C
Gain @ 85C

RF2

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

(Frequency 836MHz @ -6dBm, IS-95 Mod., VCC=3.0V, VPD=2.8V)

ACPR @ 25C
ACPR @ -40C
ACPR @ 85C

Gain versus V

Gain versus V

V

37

ACPRversus V

VGC(V)

=2.8V)

PD

VGC(V)

GC

GC

6

GC

4-48

-80.0

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

VGC(V)

-70.0

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

Vgc(V)

Rev A8 010410

RF2302

=

=

=

(Frequency 1880MHz @ -8dBm.NADCMod.,V

-23.0
ACPR @25C

-25.0

-27.0

-29.0

-31.0

ACPR (dBc)

-33.0

-35.0

-37.0

-10.0

-20.0

-30.0

-40.0

-50.0

-60.0

-70.0

Alternate Channel Power (dBc)

-80.0

-90.0

-10.0

-20.0

0.0

0.0

ACPR @-40C
ACPR @85C

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

(Frequency 836MHz @ -6dBm, IS-95 Mod., VCC=3.0V, V

1.0 1.2 1.4 1.6 1.8 2.0 2.2

Alternate ChannelPower versus V

ALTR.CH.Power@25C
ALTR.CH.Power@-40C
ALTR.CH.Power@85C

Alternate Channel Powerversus V

(Frequency 836MHz@ -6dBm, NADC. Mod., VCC=3.0V,VPD=2.8V,

ALTR.Ch.Power @25C
ALTR.Ch.Power @-40C
ALTR.Ch.Power @85C

ACPRversus V

V

PD

VGC(V)

=2.2 to 1.0V)

V

GC

VGC(V)

=2.2 to 1.0V)

V

GC

GC

=2.8v)

GC

ed

rad

3.0v,

CC

-10.0

-15.0

-20.0

ACPR. (dBc)

-25.0

-30.0

-35.0

-40.0

2.8V,

PD

-10.0

-20.0

-30.0

-40.0

-50.0

ct

u

-60.0

-70.0

od

r

P

GC

Alternate Channel Power (dBc)

-80.0

-90.0

-50.0

-55.0

(Frequency 836MHz@ -6dBm, NADC.Mod.,VCC=3.0v,VPD=2.8V,

0.0

-5.0

0.0

ACPR @25C
ACPR @-40C
ACPR @85C

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

(Frequency 1880MHz @ -8dBm, IS-95 Mod., VCC=3.0V, VPD=2.8)

ALTR.CH.Power@ 25C
ALTR.CH.Power@ -40C
ALTR.CH.Power@ 85C

RF2

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

Alternate ChannelPower versus V

(Frequency 1880MHz @-8dBm,NADCMod.,V

ALTR.Ch.Power@25C
ALTR.Ch.Power@-40C
ALTR.Ch.Power@85C

ACPR. versusV

V

=2.2 to 1.0V)

GC

VGC(V)

Alternate ChannelPower versus VGC.

6

37

VGC(V)

V

=2.8V)

PD

GC

4

AMPLIFIERS

GENERAL PURPOSE

GC

3.0V,

CC

-30.0

-40.0

Alternate Channel Power (dBc)

-50.0

-60.0

-70.0

-80.0

-90.0

ee

S

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

Upg

VGC(V)

Rev A8 010410

-60.0

-65.0

-70.0

Alternate Channel Power (dBc)

-75.0

-80.0

1.0 1. 2 1.4 1.6 1. 8 2.0 2.2

VGC(V)

4-49

GENERAL PURPOSE

AMPLIFIERS

4-50

4

RF2302

S

ee

Upg

rad

ed

P

r

od

Rev A8 010410

u

ct

RF2

37

6