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RF2301PCBA

Datasheet RF2301, RF2301PCBA Datasheet (RF Micro Devices)

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Page 1
RF2301
4
Typical Applications
• Local Oscillator Buffer Amplifiers
• FDD and TDD Communication Systems
• Commercial and Consumer Systems
Product Description
The RF2301 is a high reverse isolation buffer amplifier. The device is manufactured on a low-cost Gallium Ars­enide MESFET process, and has been designed for use as a general purpose buffer in high-end communication systems operating at frequencies from less than 300M Hz to higher than 2500MHz. With +5dBm output power, it may also be used as a driver in transmitter applications. Thedeviceispackagedinan8-leadplasticpackage.The product is self-contained, requiring just a resistor and blocking capacitors to operate. The output power, com­bined with 50dB reverse isolation at 900MHz allows excellent buffering of LO sources to impedance changes. The device can be used in 3V battery applications. The unit has a total gain of 17dB with only 14mA current from a 3V supply.
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT Si Bi-CMOS
SiGe HBT
ü
Si CMOS
HIGH ISOLATION BU FFER AM PLIFIER
• Portable Battery-Powered Equipment
•WirelessLAN
• ISM Band Applications
0.008
0.004
0.018
0.014
0.196
0.189
0.050
Dimensions in mm
0.009
0.007
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
8° MAX
0° MIN
0.034
0.016
0.157
0.150
0.244
0.229
Package Style: SOIC-8
Features
0.068
0.053
-A-
4
AMPLIFIERS
GENERAL PURPOSE
1
GND
2
GND
3
RF IN
4
GND
Rev A8 010717
8
7
6
5
VDD1
VDD2
RF OUT
GND
• Single 2.7V to 6.0V Supply
• +4dBm Output Power
• 21dB Small Signal Gain
• 50dB Reverse Isolation at 900MHz
• Low DC Current Consumption of 14mA
• 300MHz to 2500MHz Operation
Ordering Information
RF2301 High IsolationBuffer Amplifier RF2301 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-37
Page 2
RF2301
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (VDD) -0.5 to +6.5 V DC Supply Cu rrent 60 mA
Input RF Power +10 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C
DC
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information iscorrect andaccurate at the time of this printing. However,RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
4
GENERAL PURPOSE
Parameter
Min. Typ. Max.
Overall
Nominal Frequency Range 300 to 2500 MHz Input IP
3
Noise Figure 8 dB Input VSWR <2:1 In a 50Ω system Output VSWR <2:1 In a 50Ω system Power Supply Voltage 2.7 to 6.0 V
AMPLIFIERS
Nominal 5V Configuration
Gain 21 24 26 dB P
Output Power +4 dBm
1dB
Supply Current 10 30 40 mA Reverse Isolation 50 dB 900MHz, without RF input
Nominal 3V Configuration
Gain 15 17 dB P
Output Power 0 dBm
1dB
Supply Current 14 mA Reverse Isolation 50 dB 900MHz, without RF input
Specification
-8 dBm
50 dB 900MHz, with RF input, saturated 40 dB 2500MHz, without RF input 40 dB 2500MHz, with RF input, saturated
50 dB 900MHz, with RF input, saturated 40 dB 2500MHz, without RF input 40 dB 2500MHz, with RF input, saturated
Unit Condition
T=25°C, VDD=5V
Using Broad Band Application Circuit,
=5VDC, Freq=2500MHZ, T=25° C
V
DD
Using Broad Band Application Circuit,
=3VDC, Freq=2500MHZ, T=25° C
V
DD
DC
4-38
Rev A8 010717
Page 3
RF2301
Pin Function Description Interface Schematic
1GND
2GND 3RFIN
4GND 5GND 6RFOUT
Low inductance ground connections. Use individual vias to backside ground plane, placed within 0.030" of pin landing for optimum perfor­mance.
Same as pin 1. DC-coupled RF input. A broadband impedance match is produced by
internal shunt resistive feedback. The DC level is 0V. If a DC voltage is present from connected circuitry,an external DC-blocking capacitor is required for the proper DC operating point.
Same as pin 1. Same as pin 1. Open drain RF output. A broadband impedance match is produced by
an external 100Ω resistor to power supply as shown in Application Schematic 1. App roximately 3dB improvement in gain and outpu t power can be obtained over at least a 20% bandwidth by replacing the resistor to power supply with an external chip inductor network as shown in Application Schematic 2.An external DC-blocking capacitor is required if the following circuitry is not DC-blocked.
RF IN
V
DD1VDD2
4
RF OUT
7VDD2 8VDD1
Power supply connections. Bypass with external chip capacitor and individual via to backside ground plane.
Power supply connections. Bypass with external chip capacitor and individual via to backside ground plane.
AMPLIFIERS
GENERAL PURPOSE
Rev A8 010717
4-39
Page 4
RF2301
Application Schematic 1
Broadband Match
V
DD
1
8
1nF
4
GENERAL PURPOSE
AMPLIFIERS
RF IN
RF IN
2
3
100 pF 100 pF
4
7
100 Ω
6
5
Application Schematic 2
Optimum Match
1
2
3
100 pF
4
8
7
6
5
L1
V
RF OUT
DD
100 pF
L2
RF OUT
100 pF
4-40
FREQUENCY
900 MHz
2500 MHz
L1
18 nH
----
L2
22 nH
2.7 nH
Rev A8 010717
Page 5
Evaluation Board Schemati c
(Download Bill of Materials from www.rfmd.com.)
RF2301
P1-1
C3
100 pF
J1
RF IN
50 Ωµstrip
FREQUENCY
BAND
BROADBAND
(default config.)
900 MHz
2450 MHz
1
C1
100 pF
ABC
100 Ω 0 Ω
N/A
2.7 nH
2
3
4
COMPONENT
18 nH 22 nH
0 Ω
N/A
N/A
Evaluation Board Layout
Board Thickness 0.031”; Board Material FR-4
8
7
6
5
2301400A
1.43” x 1.43”
A
See Chart
C4
1nF
C
B
C2
100 pF
P1-1 VDD
P1
1 2 3
50 Ωµstrip
GND
J2
RF OUT
4
AMPLIFIERS
GENERAL PURPOSE
Rev A8 010717
4-41
Page 6
RF2301
Typical Characteristics
Broadband Application Circuit
4
GENERAL PURPOSE
AMPLIFIERS
30
20
10
0
-10
dB
-20
-30
-40
-50
-60
33.544.55
Gain
Reverse Isolation
Idd
P1dB
Vdd (V)
30
25
20
15
dBm, mA
10
5
0
30
30
Gain
Gain
20
20
10
10
0
0
-10
-10
dB
dB
-20
-20
-30
-30
Reverse Isolation
-40
-40
-50
-50
0 500 1000 1500 2000 2500 3000
1500 2000 2500 300010005000
Freque ncy (MHz)
Frequency (MHz)
Reverse Isolation
4-42
Rev A8 010717
Page 7
RF2301
S11, VCC=3V
S11 Vcc=3V
8
.
1.0-1.0
0
6
.
0
4
.
0
2
.
0
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
6
.
0
4
.
0
2
.
0
1.0
0.6
0.8
5GHz
8
.
0
-
S11, VCC=5V
S11 Vcc=5V
8
.
1.0-1.0
0
2.0
600 MHz
100 MHz
3GHz
Swp Max
0
.
2
3.0
0
.
0
.
2
6GHz
4
.
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
2
-
Swp Min
0.01GHz
Swp Max
6GHz
0
.
3
0
.
4
0
.
5
0
.
0
1
0
2
.
0
5.5 GHz
0
0.2
2
.
0
-
2
.
5GHz
4
.
0
-
4
.
0
0
S22, VCC=3V
S22 Vcc=3V
6
.
0
0.4
4.5 GHz
6
.
0
-
S22, VCC=5V
S22 Vcc=5V
6
.
0
0
.
2
3.0
1GHz
0
.
0
.
2
5.0
4.0
500 MHz
2
-
Swp Max
0
.
3
4
10.0
0
0
.
3
-
Swp Min
0.01GHz
Swp Max
0
.
3
4
6GHz
0
.
5
1
0
.
4
6GHz
0
.
5
1
0
.
0
.
0
0
.
0
1
-
.
5
-
-
4
AMPLIFIERS
GENERAL PURPOSE
0
.
0
.
0
8
.
1.0-1.0
0
1.0
0.6
0.8
8
.
0
-
8
.
1.0-1.0
0
2.0
3GHz
2GHz
0
0.2
0.4
2
.
0
-
4
.
0
-
6
.
0
-
1.0
0.6
0.8
8
.
0
-
2.0
5GHz
100 MHz
3.0
10.0
5.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.01GHz
0
0.2
0.4
2
.
0
-
4
.
0
-
5GHz
4.5 GHz
6
.
0
-
1.0
0.6
0.8
8
.
0
-
3.7 GHz
2.5 GHz
2.0
3.0
4.0
0
.
2
-
5.0
500 MHz
1.5 GHz
0
.
10.0
0
.
0
.
5
0
.
4
-
3
-
Swp Min
0.01GHz
0
1
-
-
S-Parameter Conditions: All plots are taken at ambient temperature=25°C.
NOTE: All S11 and S22 plots shown were taken from an RF2301 evaluation board with external input and output tuning compo­nents removed and the reference points at the RF IN and RF OUT pins.
Rev A8 010717
4-43
Page 8
RF2301
4
GENERAL PURPOSE
AMPLIFIERS
Gain versus Temperature
23.0
22.0
21.0
20.0
19.0
Gain (dB)
18.0
17.0
16.0
15.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 900MHz
Temperature (°C)
OP1dBversus Temperature
5.0
4.0
3.0
2.0
1.0
OP1dB (dBm)
0.0
Freq = 900MHz
Vcc=3V Vcc=5V
IIP3 versus Temperature
-5.0
-5.5
-6.0
-6.5
IIP3 (dBm)
-7.0
-7.5
-8.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 900MHz
Temperature (°C)
ICCversus Temperature
Freq = 900MHz
(mA)
CC
I
27.0
26.0
25.0
24.0
23.0
Vcc=3V Vcc=5V
-1.0
-2.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Temperature (°C)
4-44
Vcc=3V Vcc=5V
22.0
21.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Vcc=3V
Vcc=5V
Temperature (°C)
Rev A8 010717
Page 9
RF2301
Gain versus Temperature
23.0
22.0
21.0
20.0
19.0
Gain (dB)
18.0
17.0
16.0
15.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 1950MHz
Temperature (°C)
OP1dBversus Temperature
5.0
4.0
3.0
2.0
OP1dB (dBm)
1.0
0.0
-1.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 1950MHz
Temperature (°C)
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
IIP3 versus Temperature
-5.0
-5.5
-6.0
-6.5
IIP3 (dBm)
-7.0
-7.5
-8.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 1950MHz
Temperature (°C)
ICCversus Temperature
26.0
25.5
25.0
24.5
24.0
(mA)
23.5
CC
I
23.0
22.5
22.0
21.5
21.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 1950MHZ
Temperature (°C)
4
Vcc=3V
Vcc=5V
AMPLIFIERS
GENERAL PURPOSE
Vcc=3V Vcc=5V
Rev A8 010717
4-45
Page 10
RF2301
4
GENERAL PURPOSE
AMPLIFIERS
Gain versus Temperature
21.0
20.0
19.0
18.0
17.0
Gain (dB)
16.0
15.0
14.0
13.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 2450MHz
Temperature (°C)
OP1dBversus Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
OP1dB (dBm)
-0.5
-1.0
-1.5
-2.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 2450MHz
Temperature (°C)
Vcc=3V
Vcc=5V
Vcc=3V Vcc=5V
IIP3 versus Temperature
-5.0
-5.5
-6.0
-6.5
-7.0
IIP3 (dBm)
-7.5
-8.0
-8.5
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 2450MHz
Temperature (°C)
ICCversus Temperature
27.0
26.0
25.0
(mA)
24.0
CC
I
23.0
22.0
21.0
-60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0
Freq = 2450MHz
Temperature (°C)
Vcc=3V Vcc=5V
Vcc=3V Vcc=5V
S11 of Evaluation Board versusFrequency
2.8
2.6
2.4
2.2
2.0
1.8
Input VSWR
1.6
1.4
1.2
1.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0
Temperature = +25°C
Frequency(MHz)
4-46
Vcc=3V
Vcc=5V
S22 of Evaluation Board versusFrequency
3.0
2.8
2.6
2.4
2.2
2.0
1.8
Output VSWR
1.6
1.4
1.2
1.0
0.0 500.0 1000.0 1500.0 2000.0 2500.0
Temperature = +25°C
Vcc=3.0V Vcc=5.0V
Frequency(MHz)
Rev A8 010717
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