Datasheet RF2192, RF2192PCBA Datasheet (RF Micro Devices)

Preliminary

RF2192

2

Typical Applications

• 3V CDMA/AMPS Cellular Handsets

• 3V JCDMA Cellular Handsets

• 3V CDMA2000 Cellular Handsets

Product Description

The RF2192 is a high-power, high-efficiency linear ampli­fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero­junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS and CDMA2000 handheld digital cellu­lar equipment, spread-spectrum systems, and other
applications in the 800MHz to 960MHz band. The
RF2192 has a low power mode to extend battery life
under low output power conditions. The device is pack­aged in a 16 pin, 4mmx4m m leadless chip carrier.

3V 900MHZ LINEAR POWER AMPLIFIER

• 3V TDMA/GAIT Cellular H andsets

• Spread-Spectrum Systems

• Portable Battery-Powered Equipment

2

3.75

INDEX AREA

Dimensions in mm.

0.45

0.75

0.50

3.75

12°

3

0.75

1.00

0.65

0.90

0.05

0.00

NOTES:

2

3

4
5 Package Warpage: 0.05 max.

0.28

Shaded Pin isLead 1.1
Dimension appliesto plated terminal and is measured

0.10 mmand0.25mm from terminal tip.
The terminal#1 identifier and terminal numberingconv

shall conformtoJESD 95-1 SPP-012. Details of termin
identifierare optional, but must be locatedwithinthe z
indicated.Theidentifiermay be either a moldor marke
feature.

Pins 1 and 9arefused.

+

1.50 SQ

3.20

4.00

0.80
TYP

2

1

1

POWER AMPLIFIERS

4.00

1.60

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

GND

GND

RF IN

ü

GND

2

3

4

VREG1

SiGe HBT

VCC1

VCC1

161 131415

VREG2

VMODE

VCC BIAS

BIAS GND

Si CMOS

2F0

12

RF OUT

11

RF OUT

10

RF OUT

98765

GND

Functional Block Diagram

Package Style: LCC, 16-Pin, 4x4

Features

• Single 3V Supply

• 29dBm Linear Output Power

• 37% Linear Efficiency

• Low Power Mode

•45mAidlecurrent

• 47% Peak Efficiency 31dBm Output

Ordering Information

RF2192 3V 900MHz Linear Power Amplifier
RF2192 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A1 010830

2-203

2

RF2192

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (RF off) +8.0 V
Supply Voltage (P
Mode Voltage (V
Control Voltage (V
Input RF Power +10 dBm

Operating Case Temperature -30 to +110 °C
Storage Temperature -30 to +150 °C
Moisture Sensitivity Modified JEDEC Level 2

≤31dBm) +5.2 V

OUT

)+4.2V

MODE

)+3.0V

REG

DC
DC
DC
DC

Preliminary

Caution! ESD sensitive device.

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

Parameter

POWER AMPLIFIERS

Min. Typ. Max.

Specification

Unit Condition

High Power State

(V

Frequency Range 824 849 MHz
Linear Gain 27 30 dB
Second Harmonic -33 dBc
Third Harmonic <-60 dBc
Maximum Linear Output Power

(CDMA Modulation)

Total Linear Efficiency 37 % P
Adjacent Channel Power Rejec-

tion

Input VSWR 2:1
Output VSWR 10:1 No damage.

Noise Power -133 dBm/Hz At 45MHz offset

MODE

Low)

29 dBm

-48 -44 dBc ACPR@885kHz

-58 -56 dB c ACPR@1980kHz

6:1 No oscillations. >-70dBc

Low Power State

(V

Frequency Range 824 849 MHz
Linear Gain 19 22 dB
Second Harmonic -33 dBc
Third Harmonic <-60 dBc
Maximum Linear Output Power

(CDMA Modulation)

Max I
Adjacent Channel Power Rejec-

tion

Input VSWR 2:1
Output VSWR 10:1 No damage.

MODE

CC

High)

16 20 dBm

150 mA P

-48 -46 dBc ACPR@885kHz

< -60 -58 dBc ACPR@1980kHz

6:1 No oscillations. >-70dBc

Case T =25°C, VCC=3.4V,V
V

=0V to 0.5V, Freq=824 MHz to

MODE

849MHz (unless otherwise specified)

=29dBm

OUT

Case T =25°C,VCC=3.4V,V
V

=1.8V to 3V, Freq=824MHz to

MODE

849MHz (unless otherwise specified)

=+16dBm (all currents included)

OUT

REG

REG

=2.85V,

=2.85V,

2-204

Rev A1 010830

Preliminary

RF2192

Parameter

Min. Typ. Max.

High Power State CDMA
2000 1x (V

Frequency Range 824 849 MHz
Linear Gain 29 dB
Pilot+DCCH 9600
Maximum Linear Output Power

(CDMA 2000 Modulation)

Adjacent Channel Power Rejec-

tion

Pilot+FCH 9600+SCHO 9600
Maximum Linear Output Power

(CDMA 2000 Modulation)

Adjacent Channel Power Rejec-

tion

MODE

LOW)

Low Power State CDMA
2000 1x (V

Frequency Range 824 849 MHz
Linear Gain 22 dB
Pilot+DCCH 9600
Maximum Linear Output Power

(CDMA 2000 Modulation)

Adjacent Channel Power Rejec-

tion

Efficiency 15 % P
Pilot+FCH 9600+SCHO 9600

Maximum Linear Output Power

(CDMA 2000 Modulation)

Adjacent Channel Power Rejec-

tion

MODE

HIGH)

FM Mode

Frequency Range 824 849 MHz
Gain 30 dB
Second Harmonic -33 dBc
Third Harmonic <-60 dBc
Max CW Output Power 31 32 dBm
Total Efficiency (AMPS mode) 47 % P

Input VSWR 2:1
Output VSWR 10:1 No damage.

Note: DCCH: Dedicated C ontrol Channel

FCH: Fundamental Channel
CCDF: Complementary Cumulative Distribution Function

Specification

26.5 dBm 2.5dB Backoff included in IS98D CCDF 1%

-47 dBc ACPR@885kHz

<-60 dBc ACPR@1.98MHz

29 dBm 4.5dB Peak Average Ratio at CCDF 1%

-47 dBc ACPR@885kHz

<-60 dBc ACPR@1.98MHz

16 20 dBm 5.4dB Peak to Average Ratio at CCDF 1%

-48 dBc ACPR@885kHz

<-85 dBc ACPR@1.98MHz

16 20 dBm 4.5dB Peak to Average Ratio at CCDF 1%

<-50 dBc ACPR@885kHz
<-65 dBc ACPR@1.98MHz

6:1 No oscillations. >-70dBc

Unit Condition

Case T=25oC, VCC=3.4V,V
V

=0V to 0.5V, Freq=824MHz to

MODE

849MHz (unless otherwise specified)

5.4dB Peak Average Ratio at CCDF 1%

Case T=25oC, VCC=3.4V,V
V

=1.8V to 3V, Freq=824MHz to

MODE

849MHz

=20dBm

OUT

Case T=25°C, VCC=3.4V,V
V

=0V to 0.5V, Freq=824MHz to

MODE

849MHz (unless otherwise specified)

=31dBm (room temperature)

OUT

REG

REG

REG

=2.85V.

2

POWER AMPLIFIERS

=2.85V.

=2.85V,

Rev A1 010830

2-205

RF2192

Preliminary

2

Parameter

Min. Typ. Max.

Specification

Unit Condition

DC Supply

Supply Voltage 3.0 3.4 4.2 V The maximum power out for VCC=3.0V is

28dBm.

Quiescent Current 160 mA V

45 70 mA V

V

Current 10 mA

REG

Current 1 mA

V

MODE

Turn On/Off Time <40 µs Time betwe en V

Total Current (Power Down) 10 µAV

“Low” Voltage 0 0.5 V

V

POWER AMPLIFIERS

REG

“High” Voltage 2.75 2.85 2.95 V

V

REG

“Low” Voltage 0 0.5 V

V

MODE

“High” Voltage 1.8 2.85 3.0 V

V

MODE

=Low

MODE

=High

MODE

turned on and PA

REG

REG

line.

reaching full power. Turn on/off time can be
reduced by lowering the bypass capacitor
value on the V

=Low

REG

2-206

Rev A1 010830

Preliminary

RF2192

Pin Function Description Interface Schematic

1GND
2GND
3GND
4RFIN

Ground connection.
Ground connection.
Ground connection.
RF input. An external 100pF series capacitoris required as a DC block.

In addition, shunt inductor and series capacitor are required to provide
2:1VSWR.

RF IN

100 pF

From

Bias

Stages

VCC1

GND1

2

5VREG1

6VMODE

7VREG2

8BIASGND
9GND

10 RF OUT

11 RF OUT
12 RF OUT
13 2FO

14 VCC BIAS
15 VCC1

16 VCC1

Pkg

GND

Base

Power Down control for first stage. Regulated voltage suppl y for ampli­fier bias. In Power Down mode, both V

(<0.5V).
For nominal operation (High Power Mode), V
set HIGH, the driver and final stage are dynamically scaled to reduce

the device size and as a result to reduce the idle current.
PowerDown control for the second stage. Regulated voltage supply for

amplifier bias. In Power Down mode, both V
LOW (<0.5V).
Bias circuitry ground. See application schematic.

Ground connection.
RF output and power supply for final stage. This is the unmatched col-

lector output of the second stage. A DC block is required following the
matching components. The biasing may be provided via a parallel L-C
set for resonance at the operating frequency of 824MHz to 849MHz. It
is importantto select an inductor with very low DC resistance with a 1A
current rating. Alternatively,shunt microstrip tec hniques are also appli­cable and provide very low DC resistance. Low frequency bypassing is
required for stability.

Same as pin 10. See pin 10.
Same as pin 10.
Harmonic trap.This pin connects to the RF output but is used for pro-

viding a low impedance to the second harmonic of the operating fre­quency.An inductor or transmission line resonating with an on chip
capacitor at 2fo is required at this pin.

Power supply for bias circuitr y. A 100pF high frequency bypass capaci­tor is recommended.

Power supply for first stage.
Same as Pin 15.
Ground connection. The backside of the package should be soldered to

a top side ground pad which is connected to the ground plane with mul­tiple vias. The pad should have a short thermal path to the ground
plane.

REG

and V

MODE

issetLOW.When

MODE

and V

REG

need to be LOW

need to be

MODE

From Bias
Stages

POWER AMPLIFIERS

RF OUT

Rev A1 010830

2-207

RF2192

Preliminary

Evaluation Board Schema t ic

US - CDMA

(Download Bill of Materials from www.rfmd.com.)

2

VCC

C25

4.7 µF

C30

TL

3

POWER AMPLIFIERS

C9

100 pF

R2

510 Ω

C27

100 pF

C26

4.7 µF

0 Ω

J1

RF IN

100 pF

VREG

VMODE

C5

L2

5.6 nH

C24

12 pF

161 131415

2

3

4

R3

0 Ω

R4

0 Ω

R1

C6

100 pF

12

11

10

L4

39 nH

C13

100 pF

L5

1nH

TL

5

TL

1

98765

* L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series).
**C1 and C14 are High Q capacitors

(i.e., Johanson C-series).

Board C30 (pF) C1 (pF) L1 (nH) C14 (pF)
CDMA (US) 100 9.1 20 9.1

Transmission
Line Length

CDMA (US)

C2

4.7 uF

C28

10 nF

C4

100 pF

L1*

TL

C1** C14**

TL

15 mils

C17

2.4 pF
C3

100 pF

2

TL

1

350 mils

J4

RF OUT

TL

2

3

105 mils

TL

5

85 mils

2-208

Rev A1 010830

Preliminary

Board Thickness 0.031”, Board Material FR-4, Multi-Layer, Ground Plane at 0. 015”

RF2192

Evaluation Board Layout

2.0” x 2.0”

2

POWER AMPLIFIERS

Rev A1 010830

2-209

2

RF2192

POWER AMPLIFIERS

Preliminary

2-210

Rev A1 010830