Page 1
Preliminary
RF2189
2
Typical Applications
• 2.5GHz ISM Band Applications
• PCS Communication Systems
• Wireless LAN Systems
Product Description
The RF2189 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for low voltage operation. The device is manufactured on an advancedGallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF
amplifier in 2.5GHz spread-spectrum transmitters. The
device is provided in a 16-pin leadless chip carrier with a
backside ground and is self-contained with the exception
of the output matching network and power supply feed
line.
3V, 2.5GHZ LINEAR POWER AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Broadband Spread-Spectrum Systems
2
0.45
0.80
0.28
TYP
+
1.50 SQ
3.20
4.00
Dimensionsin mm.
3.75
INDEX AREA
0.75
0.50
3.75
12°
3
0.75
1.00
0.65
0.90
NOTES:
0.05
0.00
Shaded Pinis Lead 1.1
Dimension appliesto plated terminal andis measured between
2
0.10 mmand 0.25 mm fromterminal tip.
The terminal#1 identifier and terminalnumbering convention
3
shall conformto JESD 95-1 SPP-012.Details of terminal #1
identifier areoptional, but must belocated within the zone
indicated. Theidentifier may be eithera mold or marked
feature.
4
Pins 1and 9 are fused.
5 PackageWarpage: 0.05 max.
2
1
1
4.00
1.60
POWER AMPLIFIERS
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
GND
GND
NC
ü
GND
1
2
3
4
5
NC
SiGe HBT
VCC2
16 1415
Circuits
76
RF IN
VCC2
Bias
NC
VCC1
8
VPC
Si CMOS
NC
13
RF OUT
12
RF OUT
11
NC
10
9
GND
Functional Block Diagram
Package Style: LCC, 16-Pin, 4x4
Features
• Single 3.3V Power Supply
• +25dBm Saturated Output Power
• 20dB Small Signal Gain
• High Power Added Efficiency
• Power Down Mode
• 1800MHz to 2500MHz Frequency Range
Ordering Information
RF2189 3V, 2.5GHz Linear Power Amplifier
RF2189 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 010424
2-249
Page 2
RF2189
Preliminary
2
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage -0.5 to +6.0 V
Power Control Voltage (VPC)-0.5to3.3V
DC Supply Current 350 mA
Input RF Power +12 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Moisture sensitivity JEDEC Level 3
Parameter
Overall
POWER AMPLIFIERS
Frequency Range 1800 to 2500 MHz
Maximum Sa turated Output
Power
Efficiency at Max Output Power 42 %
Small Signal Gain 19 20 dB
Reverse Isolation 30 dB In “ON” state
Second Harmonic -50 dBc Including second harmonic trap, see applicaIM
3
IM
5
IM
7
Isolation -20 -30 dBm In “OFF” state, P
Input Impedance 50 Ω
Input VSWR 2:1
Noise Figure 7 dB
Min. Typ. Max.
Specification
+23 +24 +26 dBm P
30 dB In “OFF” state
-30 -23 dBm P
-35 -30 dBm P
-48 -35 dBm P
DC
Refer to “Handling ofPSOP and P SSOP Products”
on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit Condition
T=25°C,VCC=3.3V, VPC=3.0V, PIN=0dBm,
Freq=2450MHz
=+6dBm
IN
tion circuit
=+17dBm in each tone
OUT
=+17dBm in each tone
OUT
=+17dBm in each tone
OUT
=0dBm
IN
Power Down
Power Control “ON” 2.7 3.0 V Voltage supplied to control input; device is
Power Control “OFF” 0 0.5 V Voltage supplied to control input; device is
PC Input Impedance 5
kΩ
“ON”
“OFF”
Power Supply
Operating Voltage 3.0 to 5.0 V
Current Consumption 180 260 320 mA Power Down “ON”, at max output power
95 150 175 mA Power Down “ON”, two-tone test +20dBm
50 100 150 mA Idle current
Current Consumption <1 10 µA Power Down “OFF”
average output power
2-250
Rev A4 010424
Page 3
Preliminary
RF2189
Pin Function Description Interface Schematic
1GND
2GND
3GND
4NC
5NC
6RFIN
7NC
8PC
9GND
10 NC
11 RF OUT
12 RF OUT
13 NC
14 VCC1
15 VCC2
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
Same as pin 1.
Same as pin 1.
Not connected.
Not connected.
RF input. This input is DC coupled, so an external blocking capacitor is
required if this pin is connected to a DC path.
Not connected.
Power control pin. For maximum power this pin should be 3.3V. A
higher voltage is not recommended. For less output power and reduced
idle current this voltage may be reduced.
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
Not internally connected.
RF output and bias for the output stage. The power su pply for the out-
put transistor needs to be supplied to this pin. This can be done
through a quarter-wave length microstrip line thatis RF grounde d at the
other end, or through an RF inductor that supports the requi red DC currents.
Same as pin 11. See pin 11.
Not connected.
Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.
Bias supply pin for the first stage. A small tuning capacitoris requiredto
set the desired frequency response. External low frequency bypass
capacitors should be connected as shown in the application schematic
if no other low frequency decoupling is nearby.
See pin 1.
PC
See pin 5.
RF IN
500
VCC1
Ω
To RF
Stages
RF OUT
VCC2
2
POWER AMPLIFIERS
16 VCC2
Pkg
Base
Rev A4 010424
GND
Connected internally to pin 15. See pin 15.
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device
may be required.
Seepin1and6.
BIAS
2-251
Page 4
RF2189
Preliminary
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
2
C8
10 nF
L2
1k
Ω
Ferrite
C30
9pF
POWER AMPLIFIERS
1
2
3
4
5
C5
15 pF
50Ωµstrip
J1
RF IN
15 1416
Circuits
7 86
1nF
Bias
C2
VPC
C6
10 pF
13
12
11
10
9
C13
10 nF
C15
22 uF
VCCT
P1-1
P1-4
P1-5
L1
3.3 nH
VCC
1
C26
100 pF
22 pF
2.2 pF
P1
1
2
3
4
5
CON5
C7
C4
C1
µ
F
C3
15 pF
VPC
P2-2 VPC
GND
VCC
VCC
50Ωµstrip
P2
1
2
CON2
GND
J2
RF OUT
2-252
Rev A4 010424
Page 5
Preliminary
RF2189
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.031”; Board Material FR-4
2
POWER AMPLIFIERS
Rev A4 010424
2-253
Page 6
2
RF2189
POWER AMPLIFIERS
Preliminary
2-254
Rev A4 010424
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