Page 1
Preliminary
RF2186
2
Typical Applications
• 3V 1850-1910MHz CDMA-2000 Handsets
• 3V 1920-1980 MHz W-CDMA Handsets
• Spread-Spectrum Systems
Product Description
The RF2186 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 3V
CDMA-2000 and W-CDMA handsets, spread-spectrum
systems, and other applications in the 1850MHz to
2000MHz band. The device is self-contained with 50Ω
input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over
all recommended supply voltages.
3V W-CDMA POWER 1900MHZ/
3V LINEAR POWER AMPLIFIE R
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
2
0.45
3.75
INDEX AREA
Dimensionsin mm.
0.75
0.50
3.75
12°
3
0.75
1.00
0.65
0.90
NOTES:
0.05
0.00
Shaded Pin isLead1.1
Dimension applies to platedterminaland is measured
2
0.10 mm and 0.25mm from terminal tip.
The terminal #1 identifierand terminal numbering conv
3
shall conformto JESD 95-1 SPP-012. Detailsof termin
identifier are optional,butmust be located within the zo
indicated. The identifier may beeither a mold or marke
feature.
4 Pins1and9arefused.
5 Package Warpage: 0.05 max.
0.80
0.28
TYP
+
1.50 SQ
3.20
4.00
2
1
1
4.00
1.60
POWER AMPLIFIERS
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
ü
SiGe HBT
GND116RF IN15VCC114NC13NC
1
2VPD1
3VMODE
4VPD2
7
6
5
NC
BIAS GND
RF OUT
Si CMOS
8
RF OUT
12 VCC2
11 VCC2
10 VCC
9
2F0
Functional Block Diagram
Package Style: LCC, 16-Pin
Features
• Single 3V Supply
• 27dBm Linear Output Power
• 31dB Linear Gain
• 35% Linear Efficiency
• On-board Power Down Mode
Ordering Information
RF2186 3V W-CDMAPower 1900MHZ/ 3V Linear Power
RF2186 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA
Amplifier
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A2 010515
2-197
Page 2
2
RF2186
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (RF off) +8.0 V
Supply Voltage (P
Mode Voltage (V
Control Voltage (VPD)+3.0V
Input RF Power +6 dBm
Operating Case Temperature -30 to +100 °C
Storage Temperature -30 to +150 °C
≤31dBm) +5.0 V
OUT
)+3.0V
MODE
DC
DC
DC
DC
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Preliminary
Caution! ESD sensitive device.
Parameter
POWER AMPLIFIERS
Overall
Usable Frequency Range 1850 2000 MHz
Typ ical Frequency Range 1850 to 1910 MHz
Linear Gain 31 34 dB Mode=Low
Second Harmonic (including
second harmonic trap)
Third Harmonic -40 dBc
Fourth Harmonic -45 dBc
Maximum Linear Output Power
(W-CDMA Modulation)
Total Linear Efficiency 30 35 % P
Adjacent Channel Power
Rejection@5MHz
Adjacent Channel Power
Rejection@10MHz
Noise Power -137 dBm/Hz P
Maximum Linear Output Power
(W-CDMA Modulation)
Total Linear Efficiency 34 %
Input VSWR < 2 :1
Output Load VSWR 5:1 No oscillations
Min. Typ. Max.
Specification
1920 to 1980
28 31 dB Mode=High
-35 dBc
27 dBm
-40 -38 dBc P
-50 -48 dBc P
26 dBm V
Unit Condition
Power Supply
Power Supply Voltage 3.0 3.4 5.0 V
Idle Current 120 mA MODE = high
V
Current 13 mA Total pins 2 and 4, VPD=2.8V
PD
Tota l Current (Power down) 10 µAV
VPD“Low” Voltage 0 0.2 V
“High” Voltage 2.7 2.8 2.9 V
V
PD
MODE “High” Voltage 2.5 2.8
MODE “Low” Voltage 0 0.5
T=-25°C, VCC=3.4V, V
Freq=1920MHz to 19 80MHz (unless other-
wise specified)
=27dBm, V
OUT
=27dBm, W-CDMA Modulation
OUT
3G PP 3.2 03-00 DPCCH+1DPDCH
=27dBm, W-CDMA Modulation
OUT
3G PP 3.2 03-00 DPCCH+1DPDCH
=+27dBm, Rx Band 2110MHz to
OUT
2170MHz
=3.0V
CC
=low
PD
MODE
REG
High
=2.8V,
2-198
Rev A2 010515
Page 3
Preliminary
RF2186
Pin Function Description Interface Schematic
1GND1
2 VPD1
3VMODE
4 VPD2
5BIASGND
6NC
7RFOUT
8RFOUT
92FO
10 VCC
11 VCC2
12 VCC2
13 NC
14 NC
15 VCC1
16 RF IN
Ground for first stage. For best performance, keep traces physically
short and connect immediately to ground plane. This ground should be
isolated from the backsid e ground contact.
Power Down control for first and second stages. When this pin is “low”,
all first and second stage circuits are shut off. When this pin is 2.8V,all
first and second stage circuits operate nor mally. V
lated 2.8V for the amplifier to operate properly over all specified temperature and voltage ranges. A dropping resistor from a higher
regulated voltage may be used to provide the required 2.8V.
V
adjusts the bias to the second and third stages. In normal oper-
MODE
ation and for maximum efficiency,V
the power and linearity will meet the published specifications. If addi-
tional linearity is desired, V
ciency will decrease. If V
need to be adjusted for optimum performance.
Power Down control for third stage. When this pin is “low”, all third
stage circuits are shut off. When this pin is 2.8V,all third stage circuits
operate normally. V
operate properly over all specified temperature and voltage ranges. A
dropping resist o r from a higher regulated voltage may be used to provide the required 2.8V. A 15pF high frequency bypass capacitor is recommended.
For best performance, keep traces physically short and connect to
ground plane through a 15nH inductor. This ground should be isolated
from the backside ground contact.
Not Connected.
RF output and power supply for final stage. This is the unmatched col-
lector output of the third stage. A DC block is r equired following the
matching components. The biasing may be provided via a parallel L-C
set for resonance at the operating frequency of 1920 MHzto 1980MHz.
It is important to select an inductor with very low DC resistance with a
1A current rating. Alternatively, shunt microstrip techniques are also
applicable and provide very low DC resistance. Low frequency bypassing is required for stability.
Same as pin 7. See pin 7.
Second harmonic trap.Keep traces physically short and connect imme-
diately to ground plane. This ground should be isolated from backside
ground contact.
Supply for bias reference and control circuits. High frequency bypassing may be necessary.
Power supply for second stage and i nterstage match. Pins 11 and 12
should be connected by a common trace where the pins contact the
printed ci r cuit board.
Same as pin 11.
Not Connected.
Not Connected.
Power supply for first stage and interstage match. VCCshould be fed
through a 1.2nH inductor terminated with a 8.2pF capacitor on the supply side. The inductor should be as close to the pin as possible.
RF input. An external series capacitor is required as a DC block.
MODE
is pulled “low”, the output match will
MODE
requires a regulated 2.8 V for the amplifier to
PD
should be “high”. In this mode
MODE
may be pulled “low”, however effi-
requires a regu-
PD1
See pin 16.
See pin 16.
From Bias
Network
RF OUT
VCC1
2
POWER AMPLIFIERS
Pkg
Base
Rev A2 010515
GND
Ground connection. The backside of the p ackage should be soldered
to a top side ground pad which is connected to the ground plane with
multiple vias. The pad should have a short thermal path to the ground
plane.
RF IN
From Bias
Network
GND1
2-199
Page 4
RF2186
Preliminary
Application Schematic
W-CDMA (1920MHz to 1980MHz)
RF IN
2
15 pF
1 µF
+
VREG
R2 (Ω)
150
1.8 kΩ
C30 (pF)
8.2
TL
0.053"
1
C1 (pF)
POWER AMPLIFIERS
VMODE
Transmission Line Length
W-CDMA
Board
W-CDMA
TL
0.140"
4.7
15 pF
1 16 15 14 13
2
3
4
15 pF
TL
3
2
0.022"
L1 (nH)
16
5
15 nH
C14 (pF)
2.2
R2
TL
1
TL
2
RF OUT
1.2 nH
L1*
C1**
C14**
15 pF
* L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series).
**C1 and C14 are High Q capacitors
8.2 pF 10 nF
TL
12
11
10
9876
(i.e., Johanson C-series).
3
15 pF 10 nF
10 nH
C30 10 nF
15 pF
+
1 µF
+
4.7 µF
V
CC
2-200
Rev A2 010515
Page 5
Preliminary
RF2186
Evaluation Board Schemati c
W-CDMA (1920MHz to 1980MHz)
J1
RF IN
P2
P3
* L1 is a High Q inductor(i.e.,Coilcraft0805HQ-series).
**C1 and C14 areHigh Q capacitors (i.e., Johanson C-series).
Transmission Line Length TL1TL2TL
WCDMA 0.053" 0.140" 0.022"
50 Ωµstrip
R1
1.8 kΩ
C10
+
1 µF
C27
15 pF
C13
15 pF
2186400B
15 nH
3
C5
15 pF
R2
1 16 15 14 13
2
3
4
5
L4
TL
TL
C3
15 pF
1
2
C14**
C1**
L3
1.2 nH
L1*
C11
8.2 pF
C12
10 nF
C7
+
1 µF
2
C4
15 pF
L5
10 nH
C30
C6
15 pF
C26
10 nF
C8
10 nF
+
C2
4.7 µF
50 Ωµstrip
P1
P1
P1
HDR_1
P1
P2
HDR_1
P1
P3
HDR_1
P1
P4 GND
HDR_1
J2
RF OUT
POWER AMPLIFIERS
VCC
1
VREG
1
VMODE
1
1
TL
12
11
10
9876
3
Board R2 (Ω) C30 (pF) C1 (pF) L1 (nH) C14 (pF)
WCDMA 150 8.2 4.7 16 2.2
Rev A2 010515
2-201
Page 6
2
RF2186
Preliminary
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.028”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014
POWER AMPLIFIERS
2-202
Rev A2 010515
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