Page 1
RF2172
2
Typical Applications
• BluetoothTMPA
• 2.4GHz to 2.5GHz ISM Band Systems
• 902MHz to 928MHz ISM Band Systems
Product Description
The RF2172 is a medium-power high efficiency amplifier
IC targeting 3.6 V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 2.45GHz
Bluetooth applications and frequency hopping/direct
sequence spread-spectrum cordless telephones or other
applications in the 902MHz to 928MHz ISM band. The
device is packaged in a compact 4mmx4mm LCC. The
device features analog gain control to optimize transmit
power while maximizing battery life in portable equipment
requiring up to 100mW transmit power at the antenna
port.
BLUETOOTH is a trademark owned by the Bluetooth SIG, Inc., and licensed
to RF MicroDevices,Inc.
ISM BAND 3.6V, 250MW AMP WITH
ANALOG GAIN CONTROL
• 3.6V Spread-Spectrum Cordless Phones
• Portable Battery-Powered Equipment
• Spread-Spectrum Systems
2
3.75
INDEX AREA
Dimensions in mm.
0.45
0.75
0.50
3.75
12°
3
0.75
1.00
0.65
0.90
0.05
0.00
NOTES:
2
3
4
5 Package Warpage: 0.05 max.
0.28
Shaded Pin isLead 1.1
Dimension appliesto plated terminal and is measured
0.10 mmand0.25mm from terminal tip.
The terminal#1 identifier and terminal numberingconv
shall conformtoJESD 95-1 SPP-012. Details of termin
identifierare optional, but must be locatedwithinthe z
indicated.Theidentifiermay be either a moldor marke
feature.
Pins 1 and 9arefused.
+
1.50 SQ
3.20
4.00
0.80
TYP
2
1
1
POWER AMPLIFIERS
4.00
1.60
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
RF IN
GND
ü
GNDGND
1
2GND
3
4
SiGe HBT
VCC
GND
16
Bias
6
APC
VPD
GND
85
GND
Si CMOS
GND
131415
12 RF OUT
11 RF OUT
10
GND
97
GND
Functional Block Diagram
Package Style: LCC, 16-Pin, 4x4
Features
• 23.5dBm Typical Output Power
• 0dB to 28dB Variable Gain
• 45% Efficiency at Max Output
• On-Board Power Down Mode
• 2.4GHz to 2.5GHz Operation
• 902MHz to 928MHz Operation
Ordering Information
RF2172 ISM Band 3.6V, 250mW Amp with Analog Gain Con-
RF2172 PCBA-H Fully Assembled Evaluation Board 2.4to2.5GHz
RF2172 PCBA-L Fully Assembled Evaluation Board 902to928MHz
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro,NC 27409, USA
trol
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A9 010823
2-213
Page 2
2
RF2172
Absolute Maximum Ratings
Parameter Rating Unit
Supply Voltage (RF off) -0.5 to +6.0 V
APC Current (Max imum) +10 mA
Control Voltage (V
Input RF Power +10 dBm
Operating Case Temperature -40 to +85 °C
Storage Temperature -55 to +155 °C
) -0.5 to +6.0 V
PD
DC
DC
Caution! ESD sensitive device.
RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However,RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Min. Typ. Max.
Overall
Usable Frequency Range 500 to 2500 MHz
POWER AMPLIFIERS
Input Impedance 50 Ω
Input VSWR 1.8:1 Without Input Match
Output Load VSWR <10:1 0<
2.45GHz Operation
Operating Frequency 2.4 to 2.5 GHz
Maximum Output Power 22 +23.5 24.5 dBm
Total Efficiency 45 %
Reverse Isolation -25 dB
Second Harmonic -45 dBc
Third Harmonic -40 dBc
All Other Spurious -50 dBc
Output Load Impedance 20-j4.5 Present to part
Gain Control Voltage 0 to V
High Gain +22 dB V
Low Gain -10 dB V
902MHz Operation
Operating Frequency 902 to 928 MHz
Maximum Output Power +24 dBm
Total Efficiency 58 %
Reverse Isolation -35 dB
Second Harmonic -40 dBc
Third Harmonic -40 dBc
All Other Spurious -50 dBc
Output Load Impedence 20-j1.6 Ω Present to part
Gain Control Voltage 0 to V
Gain Control Slope 20 dB/V
Gain 0 to 28 dB
Specification
<6:1 0<V
CC
CC
Unit Condition
T=25°C, VCC=3.6V,VPD=3.6V,V
Freq=2.4GHz to 2.5GHz, PIN=0dBm
V
APC
APC
Freq=902MHz to 928MHz, PIN=-3.0dBm
V
V
<3.0V
APC
<3.6V
APC
=3.6V,VCC=3.6V,PIN=0dBm
=0V,VCC=3.6V,PIN=0dBm
Power Supply
Power Supply Voltage 3.6 V
Power Supply Current 145 mA V
Idle Current 35 mA V
Power Down Current
I(PD) 4.5 mA VCC=3.6V,VPD=3.6Vinto PD pin
I(PD) 2.25 mA V
2.8 10 µAVCC=3.6V,V
=3.6V,V
CC
V
=3.6V
PD
=3.6V,V
PD
=3.0V,VPD=3.0Vinto PD pin
CC
=3.6V,PIN=-3dBm,
APC
=3.6V,RF PIN<-30dBm
APC
=0V,VPD=0V total I
APC
APC
=2.5V
CC
2-214
Rev A9 010823
Page 3
RF2172
R
R
Pin Function Description Interface Schematic
1GND
2GND
3RFIN
4GND
5GND
6 VPD
7APC
Ground connection. For best performance, keep traces physically short
and connect immediately to the ground plane.
Ground connection for the driver stage. For be st perform ance, keep
traces physically short and connect immediately to the ground plane.
RF input. This is a 50Ω input. No external matching is needed. An
external DC blocking capacitor is required if this port is connected to a
DC path to ground or a DC voltage.
See pin 1.
See pin 1.
Power down pin. When this pin is 0V, the device will be in power down
mode, dissipating minimum DC power.This pin also serves as the V
supply pin for the bias circuitry. VPDshould be at the supply voltage
when the part is not in power down mode.
Analog power control. Output power varies as a function of the voltage
on this pin. See graph. This pin must be driventhrough a series resistor
with a voltage between 0V and V
dynamic range of power control. Se e plot “P
versus Gain Control Resistor”.
. Series resistor determines
CC
versus Gain Control
OUT
CC
See pin 15.
Bias
Network
APC
RF IN
1st
Stage
2
POWER AMPLIFIERS
8GND
9GND
10 GND
11 RF OUT
12 RF OUT
13 GND
14 GND
15 VCC
16 GND
Pkg
GND
Base
See pin 1.
See pin 1.
See pin 1.
RF output. An external matching network is required to provide the opti-
mum load impedance at this pin.
RF output and power supply for the output stage. Bias voltage for the
output stage is provided through this pin. A shunt cap resonating with
the bond wire inductance at 2xf
a second harmonic trap.
See pin 1.
See pin 1.
Power supply for driver stage and interstage matc hing. This pin forms
the shunt inductance needed for proper tuning of the interstage. Refer
to the application schematic for the proper configuration. Note: Position
and value of the components are important.
See pin 1.
Ground connection for the output stage. This pad should be connected
to the groundplane by vias directly under the device. A short path is
required to obtain optimum performance, as well as provide a good
thermal path to the PCB for maximum heat dissipation.
canalsobeusedatthispintoprovide
0
See pin 15.
See pin 15.
Inductor
Pin 15
Bond
Wire
RF IN
1st Stage
V
CC
External Cap
GND
2nd Stage
FOUT
FOUT
Rev A9 010823
2-215
Page 4
RF2172
R
Application Schematic - 915MHz
V
CC
2
22 nF
2
22 nF
RF IN
POWER AMPLIFIERS
3
4
3.9 nH
131415161
Bias
98765
R
APC
3k
Ω
22 nF22 nF
V
APC
PD
4pF
12
3.9 nH
11
2.7 nH
10
22 nF
22 nF
4pF
V
CC
FOUT
Application Schematic - 2.45GHz
V
CC
RF IN
22 nF
0.5 pF
22 nF
4pF
2
3
4
10
V
CC
Ω
Bias
10
200
22 nF22 nF
Ω
131415161
12
1.5 nH
11
10
98765
5pF5pF
Ω
VAPC
22 nF
22 nF
1.5 pF
V
CC
RF OUT
2-216
Rev A9 010823
Page 5
Evaluation Board Schem atic - 915MHz
(Download Bill of Mater i als from www.rfmd.com).
RF2172
J1
RF IN
VCC1
50Ωµstrip
C2
22 nF
22 nF
2
3
4
C3
22 nF
VCC2
L1
3.9 nH
Bias
R2
Ω
3k
C4
22 nF
R1*
OPEN
131415161
P1
P1-1 VCC2
P1-3 VCC3
C7
4pF
12
11
10
98765
L3
3.9 nH
L2
2.7 nH
1
2
3
CON3
C8
22 nF
C6
22 nF
C5
4pF
GND
50Ωµstrip
P2
P2-1 VAPC
P2-3 VCC1
1
2
3
CON3
GND
VCC3
J2
RF OUT
VAPC
2
POWER AMPLIFIERS
Rev A9 010823
2-217
Page 6
RF2172
Evaluation Board Schematic - 2.45GHz
2
VCC2
P1-1 VCC2
C11
22 nF
C10
4pF
C2
POWER AMPLIFIERS
J1
RF IN
50Ωµstrip
22 nF
C1
0.5 pF
VCC1
2
3
4
C3
5pF
R1
10
C4
22 nF
Ω
Bias
R3
10
5pF
R2
200
C5
22 nF
C6
Ω
131415161
98765
Ω
P1-3 VCC3
1.5 nH
12
11
10
2172401-
VAPC
L1
C9
22 nF
C7
1.5 pF
P1
1
2
3
CON3
GND
C8
22 nF
P2-1 VAPC
P2-3 VCC1
50Ωµstrip
P2
1
2
3
CON3
GND
VCC3
J2
RF OUT
2-218
Rev A9 010823
Page 7
Evaluation Board Layout - 915MHz
Board Size 0.80" x 0.85"
Board Thickness 0.031”, Board Material FR-4
Evaluation Board Layout - 2.45GHz
Board Size 0.800" x 0.924"
Board Thickness 0.031”, Board Material FR-4
RF2172
2
POWER AMPLIFIERS
Rev A9 010823
2-219
Page 8
RF2172
30.0
25.0
20.0
VCC=3.6V, V
Pout-40
Pout25
Pout85
P
versus P
OUT
=3.6V, Freq=915MHz
APC
P
IN
30.0
25.0
20.0
VCC=3.0V, V
Pout -40
Pout 25
Pout 85
versus P
OUT
=3.0V, Freq=915MHz
APC
IN
2
15.0
(dBm)
10.0
OUT
P
5.0
0.0
-5.0
POWER AMPLIFIERS
-10.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
PIN(dBm)
Efficiency versus P
70.0
60.0
50.0
40.0
30.0
Efficiency (%)
20.0
VCC=3.6V, V
Eff(%)-40
Eff(%)25
Eff(%)85
=3.6V, Freq=915MHz
APC
IN
15.0
(dBm)
10.0
OUT
P
5.0
0.0
-5.0
-10.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
PIN(dBm)
(A)
CC
I
0.18
0.16
0.14
0.12
0.10
0.08
0.06
VCC=3.6V, V
Icc -40
Icc 25
Icc 85
ICC versus P
APC
IN
=3.6V, Freq=915MHz
(dBm)
OUT
P
2-220
10.0
0.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
PIN(dBm)
POUTversus V
30.0
25.0
20.0
15.0
10.0
5.0
0.0
-5.0
-10.0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6
VCC=3.6V, Freq=915MHz, PIN=-3dBm
Pout-40
Pout25
Pout85
APC
V
(V)
APC
0.04
0.02
-25.00 -20.00 -15.00 -10.00 -5.00 0.00 5.00
PIN(dBm)
ICC versus V
0.16
0.15
0.14
0.13
0.12
0.11
0.10
(A)
0.09
CC
I
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.00 0.30 0.60 0.90 1.20 1.50 1.80 2.10 2.40 2.70 3.00 3.30 3.60
VCC=3.6V, Freq=915MHz, PIN=-3dBm
Icc -40
Icc 25
Icc 85
APC
V
(V)
APC
Rev A9 010823
Page 9
(mA)
APC
I
-0.2
-0.4
RF2172
I
versus V
0.6
0.4
0.2
0.0
VCC=3.6V, VPD=3.6V, Freq=915MHz
Iapc[mA]-40
Iapc[mA]25
Iapc[mA]85
APC
APC
30.0
25.0
20.0
15.0
(dBm)
10.0
OUT
P
5.0
0.0
P
versus Gain Control versus R
OUT
VCC=3.6V, PIN=-3dBm, Freq=915MHz
Rapc (3k)
Rapc (3.5k)
Rapc (4k)
APC
2
-0.6
-0.8
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6
P
OUT
30.0
25.0
20.0
15.0
VCC=3.6V, V
Rapc (3k)
Rapc (3.5k)
Rapc (4k)
V
(V)
APC
versus PINversus R
=3.6V, Freq=915MHz
APC
APC
(dBm)
OUT
10.0
P
5.0
0.0
-5.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
PIN(dBm)
Efficiency versus P
50.0
45.0
40.0
35.0
30.0
25.0
20.0
Efficiency (%)
15.0
10.0
5.0
0.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
VCC=V
Eff@-40C
Eff@+25C
Eff@+85C
=3.6V,Freq=2.45GHz
APC
IN
PIN(dBm)
-5.0
-10.0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6
30.0
25.0
20.0
15.0
(dBm)
10.0
OUT
P
5.0
0.0
-5.0
-10.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
VCC=V
Pout@-40C
Pout@+25C
Pout@+85C
V
(V)
APC
P
versus P
OUT
=3.6V,Freq=2.45GHz
APC
IN
PIN(dBm)
0.25
0.20
0.15
VCC=V
Icc@-40C
Icc@+25C
Icc@+85C
ICCversus P
=3.6V,Freq=2.45GHz
APC
IN
(A)
CC
I
0.10
0.05
0.00
-25.00 -20.00 -15.00 -10.00 -5.00 0.00 5.00
PIN(dBm)
POWER AMPLIFIERS
Rev A9 010823
2-221
Page 10
2
RF2172
P
versus V
25.0
20.0
15.0
10.0
(dBm)
5.0
OUT
P
0.0
-5.0
-10.0
POWER AMPLIFIERS
-15.0
VCC=3.6V,Freq=2.45GHz,PIN=0dBm
Pout@-40C
Pout@+25C
Pout@+85C
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
OUT
APC
0.18
0.16
0.14
0.12
0.10
VCC=3.6V,Freq=2.45GHz,PIN=0dBm
Icc@-40C
Icc@+25C
Icc@+85C
(dBm)
0.08
OUT
P
0.06
0.04
0.02
0.00
0.00 0.40 0.80 1.20 1.60 2.00 2.40 2.80 3.20 3.60
V
(V)
APC
f0,2f0over Frequency
=3.6V, PIN=0dBm
V
30.0
20.0
10.0
0.0
-10.0
(dBm)
0
-20.0
f
-30.0
-40.0
-50.0
CC=VAPC
f0@ -40 C f0@ +25 C
f0@ + 85C 2f0@-40C
2f0@+ 25C 2f0@+ 85C
0.0
-10.0
-20.0
-30.0
2f0 (dBc)
-40.0
-50.0
(dBm)
OUT
P
25.0
20.0
15.0
10.0
-5.0
Pout@-40C
Pout@+25C
Pout@+85C
5.0
0.0
VCC-V
P
versus V
OUT
V
P
OUT
=3.0V,Freq=2.45GHz
APC
(V)
APC
versus P
APC
IN
-60.0
2400.0 2420.0 2440.0 2460.0 2480.0 2500.0
Frequency (MHz)
ICCversus P
0.16
0.14
0.12
0.10
(A)
0.08
CC
I
0.06
0.04
0.02
0.00
-25.00 -20.00 -15.00 -10.00 -5.00 0.00 5.00
VCC=V
Icc@-40C
Icc@+25C
Icc@+85C
=3.0V,Freq=2.45GHz
APC
IN
PIN(dBm)
2-222
-60.0
-10.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
PIN(dBm)
Efficiencyversus P
50.0
45.0
40.0
35.0
30.0
25.0
20.0
Efficiency (%)
15.0
10.0
5.0
0.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
VCC=V
Eff@-40C
Eff@+25C
Eff@+85C
=3.0V,Freq=2.45GHz
APC
IN
PIN(dBm)
Rev A9 010823
Page 11
(dBm)
OUT
P
25.0
20.0
15.0
10.0
-5.0
RF2172
P
versus V
VCC=3.0V,Freq=2.45GHz,PIN=0dBm
OUT
Pout@-40C
Pout@+25C
Pout@+85C
5.0
0.0
APC
(A)
CC
I
0.14
0.12
0.10
0.08
0.06
0.04
VCC=3.0V,Freq=2.45GHz,PIN=0dBm
Icc@-40C
Icc@+25C
Icc@+85C
ICCversus V
APC
2
-10.0
-15.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
(V)
APC
P
versus PINover R2
OUT
V
30.0
25.0
20.0
15.0
(dBm)
10.0
OUT
P
5.0
0.0
-5.0
-10.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
Pout(100)
Pout(200)
Pout(300)
Pout(400)
CC=VAPC
= 3.6 V, Freq= 2450 MHz
PIN(dBm)
Efficiencyversus PINover R2
50.0
45.0
40.0
35.0
30.0
25.0
20.0
Efficiency (%)
15.0
10.0
5.0
0.0
-25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0
V
Eff(100)
Eff(200)
Eff(300)
Eff(400)
=3.6V,Freq=2450MHz
CC=VAPC
PIN(dBm)
0.02
0.00
0.00 0.50 1.00 1.50 2.00 2.50 3.00
V
(V)
APC
ICCversus PINover R2
0.25
0.20
0.15
Icc(100)
Icc(200)
Icc(300)
Icc(400)
V
CC=VAPC
=3.6V,Freq=2450MHz
(A)
CC
I
0.10
0.05
0.00
-25.00 -20.00 -15.00 -10.00 -5.00 0.00 5.00
PIN(dBm)
I
versus V
V
0.000 0.400 0.800 1.200 1.600 2.000 2.400 2.800 3.200 3.600
(A)
APC
I
0.012
0.010
0.008
0.006
0.004
0.002
0.000
-0.002
-0.004
APC
=3.6V,PIN= 0 dBm, Freq = 2450 MHz
CC
Iapc(100)
Iapc(200)
Iapc(300)
Iapc(400)
over R2
APC
V
(V)
APC
POWER AMPLIFIERS
Rev A9 010823
2-223
Page 12
2
RF2172
POWER AMPLIFIERS
2-224
Rev A9 010823
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