Datasheet RF2163, RF2163PCBA Datasheet (RF Micro Devices)

Preliminary

RF2163

2

Typical Applications

• 2.5GHz ISM Band Applications

• PCS Communica tion Systems

• Wireless LAN Systems

Product Description

The RF2163 is a linear, medium power, high efficiency
amplifier IC designed specifically for low voltage opera­tion. The devi c e is ma n ufactured on an advanced Galliu m
Arsenide Heterojunction Bipolar Transistor (HBT) pro­cess, and has been designed for use as the final RF
amplifier in 2.5GHz spread-spectrum transmitters. The
device is provided in a 16-pin leadless chip carrier with a
backside ground and is self-contained with the exception
of the output matching network and power supply feed
line.

3V, 2.5GHZ LINEAR POWER AMPLIFIER

• Commercial and Consumer Systems

• Portable Battery Power ed Equipment

• Broadband Spread-Spectrum Systems

2

0.45

0.80

0.28

TYP

+

1.50 SQ

3.20

4.00

Dimensions in mm.

3.75

INDEX AREA

0.75

0.50

3.75

12°

3

0.75

1.00

0.65

0.90

NOTES:

0.05

0.00

Shaded Pin is Lead 1.1
Dimension applies to plated terminal and is measured between

2

0.10 mm and 0.25 mm from terminal tip.
The terminal #1 identifier and terminal numbering convention

3

shall conform to JESD 95-1 SPP-012. Details of terminal #1
identifier are optional, but must be located within the zone
indicated. The identifier may be either a mold or marked
feature.

4 Pins 1 and 9 are fused.
5 Package Warpage: 0.05 max.

2

1

1

4.00

1.60

POWER AMPLIFIERS

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

!

SiGe HBT

GND16VCC15VCC114VCC113NC

1

2RF IN

3BIAS GND2

4PWR SEN

5

PWR REG

Bias

6

VREG17VREG2

Si CMOS

12 RF OUT

11 RF OUT

10 RF OUT

8

BIAS GND 1

9

GND

Functional Block Diagram

Package Style: LCC, 16-Pin

Features

• Single 3.3V Power Supply

• +30dBm Saturated Output Power

• 19dB Small Signal Gain

• High Power Added Efficiency

• Patent Pending Power Sense Technology

• 1800MHz to 2500MHz Frequency Range

Ordering Information

RF2163 3V, 2.5GHz Linear Pow er A m plifier
RF2163 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A2 001221

2-249

RF2163

Preliminary

2

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +6.0 V
Power Control Voltage (VPC) -0.5 to 3.3 V
DC Supply Current 1000 mA

Input RF Power +15 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Moisture sensitivity JEDEC Level 3

Parameter

Overall

POWER AMPLIFIERS

Frequency Range 1800 to 2500 MHz
Maximum Saturated Output

Power
Efficiency at Max Output Power 37 %
Maximum Linear Output Power 25 dBm With 802.11 modulation (11Mbit/s) and

Linear Efficiency 25 %
Small Signal Gain 17 19 dB
Reverse Isolation 30 dB In “ON” state

Second Harmonic -35 dBc Including second harmonic trap, see applica-

Adjacent Channel Power -35 dBc P

Isolation TBD dBm In “OFF” state, P
Input Impedance 50 Ω

Input VSWR 2:1

Min. Typ. Max.

Specification

+29 +30 +32 dBm P

30 dB In “OFF” state

-52 P

Pow er Down

V

“ON” 2.4 V Voltage supplied to control input; device is

REG

“OFF” 0 0.5 V Voltage supplied to control inpu t; device is

V

REG

Power Supply

Operating Voltage 3.0 to 5.0 V
Current Consumption 650 mA Power Down “ON”, at max output power

350 mA Power Down “ON”, P
150 mA Idle current

DC

Refer to “Handling of PSOP and PSSOP Products”
on page 16-15 for special handling information.

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

Unit Condition

T=25 °C, VCC=3.5V, VPC=2.4V,
Freq=2450MHz

=+13dBm

IN

meeting 802.11 spectral mask.

tion circuit

=25dBm

OUT

=25dBm

OUT

=TBD

IN

“ON”
“OFF”

=25dBm

OUT

2-250

Rev A2 001221

Preliminary

RF2163

Pin Function Description Interface Schematic

1GND
2RF IN
3BIAS GND2
4 PWR SEN

5PWR REF
6VREG1

7VREG2
8BIAS GND1

9GND

10 RF OUT

11 RF OUT
12 RF OUT
13 NC
14 VCC1

Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.

RF input. This input is AC coupled, so an external blocking capacitor is
not required if this pin is connected to a DC path.

Ground for second stage bias circuit. For best performance, keep
traces physically short and connect immediately to ground plane.

The PWR SEN and PWR REF pins can be used in conjunction with an
external feedback path to provide an RF power control function for the
RF2163. The power control function is based on sampling the RF drive
to the final stage of the RF2163.

Same as pin 4.
This pin requires a regulated supply to maintain the correct bias cur-

rent.
Same as pin 6.

Ground for first stage bias circuit. For best performance connect to
ground with a 10nH inductor.

Same as pin 1.
RF output and bias for the output stage. The power supply for the out-

put transistor needs to be supplied to this pin. This can be done
through a quarter-wave length microstrip line that is RF grounded at the
other end, or through an RF inductor that supports the required DC cur­rents.

Same as pin 10. See pin 10.
Same as pin 10. See pin 10.
Not connected.
Power supply pin for the bias circuits. External low frequency bypass

capacitors should be connected if no other low frequency decoupling is
nearby.

See pin 14.

RF IN

RF OUT

VCC

2

POWER AMPLIFIERS

15 VCC1
16 VCC

Pkg

GND

Base

Same as pin 14. See pin 14.
Same as pin 14. See pin 14.
Ground connection. The backside of the package should be connected

to the ground plane through a short path, i.e., vias under the device
may be required.

See pin 1 and 2.

BIAS

Rev A2 001221

2-251

RF2163

Application Schematic

2400MHz to 2483MHz

Preliminary

V

CC

2

POWER AMPLIFIERS

PWR SEN

PWR REF

Part is Backside Grou nded.

RF IN

1000 pF

1000 pF

390 Ω

390 Ω

1000 pF

1.5 pF

1.5 nH

1000 pF

1 16 15 14 13

2

3

4

5 6 7 8 9

1000 pF

10 uF

VREG1 VREG2

Bias

1000 pF

10 uF

1000 pF

6.2 pF

12

11

10

3.0 pF

TL1 TL2

3.0 pF

10 nH

Transmission

Line Length

WLAN

10 uF

1000 pF

TL1

10 pF

10 pF

1.5 pF

V

REG1

V

REG2

VCC = 3.5 V

= 2.4 V
= 2.4 V

TL2

15 nH

25 mil 175 mil

RF OUT

2-252

Rev A2 001221

Preliminary

RF2163

Evaluation Board Schemati c

2400MHz to 2483 MHz

(Download Bill of Materials from www.rfmd.com.)

P2-4

P1-3
P1-1

Part is Backside Grounded.

J1

RF IN

C2

1000 pF

1000 pF

R2

390 Ω

C15

50 Ω µstrip

390 Ω

1000 pF

R1

C16

C1

1.5 pF

L3

1.5 nH

2163400-

C4

1000 pF

1 16 15 14 13

2

3

4

5 6 7 8 9

C3

1000 pF

C21

10 uF

P2-2 P2-1

Bias

C13

1000 pF

C20

10 uF

Transmission

Line Length

WLAN 25 mil 175 mil

C12

1000 pF

C11

6.2 pF

12

11

10

L2

10 nH

TL1 TL2

C22

10 uF

C10

1000 pF

GND

C9

10 pF

C8

10 pF

C7

1.5 pF

C5

3.0 pFL115 nH

TL1 TL2

C6

3.0 pF

P1

1

P1-1 PS REF

2

P1-3 PWR SENSE

3

50 Ω µstrip

RF OUT

V

= 2.4 V

REG1

V

= 2.4 V

REG2

VCC = 3.5 V

P2

1

P2-1 VREG2

2

P2-2 VREG1

GND

3

P2-4 VCC

4

2

POWER AMPLIFIERS

J2

Rev A2 001221

2-253

2

POWER AMPLIFIERS

RF2163

Preliminary

Evaluation Board Layout

Board Size 2.0” x 2.0”

Board Thickness 0.028”, Board Material FR-4

2-254

Rev A2 001221