Datasheet RF2157, RF2157PCBA Datasheet (RF Micro Devices)

RF2157

2

Typical Applications

• 3V 1850-1910MHz CDMA PCS Handsets

• 3V 1750-1780MHz CDMA PCS Handsets

• 3V TDMA PCS Handsets

Product Description

The RF2157 is a high-power, high-efficiency linear ampli­fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero­junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA and TDMA handheld digital equipment,
spread-spectrum systems, and other applications in the
1710 MHz to 1910MHz band. The device is packaged in a
compact 4mmx4mm LCC, as well as a 4mmx4mm MLF
(micro leaded package). The frequency response can be
optimized for linear performance over 1710MHz to
1910 MHz. The device features a digital m ode switch
which can be used to minimize operating current under
low output powerconditions.

PCS CDMA/TDMA 3V POWER AMPLIFIER

• Spread-Spectrum Systems

• Commercial and Consumer Systems

• Portable Battery-Powered Equipment

2

Dimensions in mm.

3.75

INDEX AREA

0.45

0.75

0.50

3.75

12°

3

0.75

1.00

0.65

0.90

0.05

0.00

NOTES:

2

3

4
5 PackageWarpage:0.05 max.

0.28

Shaded PinisLead 1.1
Dimension appliestoplated terminal and is measuredbetween

0.10 mmand0.25 mm from terminal tip.
The terminal#1identifier and terminal numbering convention

shall conformtoJESD 95-1 SPP-012. Details ofterminal#1
identifier areoptional,but must be located withinthezone
indicated. Theidentifiermay be either a moldormarked
feature.

Pins 1and9 are fused.

1.50 SQ

3.20

4.00

0.80
TYP

+

2

1

1

POWER AMPLIFIERS

4.00

1.60

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

GND

1

2VPD1

3MODE

4VPD2

5

GND

RF IN

16

6NC7

NC

15

RF OUT8RF OUT

NC

14

Si CMOS

NC

13

12 VCC1

11 VCC1

10 VCC

9

GND

Functional Block Diagram

Package Style: LCC, 16-Pin, 4x4

Features

• Single 3V Supply

• 29dBm Linear Output Power

• 24dB Linear Gain

• 35% Linear Efficiency

• On-board Power Down Mode

• 1750MHz to 1910MHz Operation

Ordering Information

RF2157 PCS CDMA Power Amplifier
RF2157 PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A19 010611

2-187

2

RF2157

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage (RF off) +8.0 V
Supply Voltage (P
Mode Voltage (V
Control Voltage (VPD)+3.5V
Input RF Power +12 dBm

Operating Case Temperature -30 to +110 °C
Storage Temperature -65 to +150 °C

≤31dBm) +4.5 V

OUT

)+3.5V

MODE

DC

DC
DC
DC

RF Micro Devices believesthe furnishedinformation is correctand accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice.RF Micro Devices does not
assume responsibility for the use of the described product(s).

Caution! ESD sensitive device.

Parameter

Overall

POWER AMPLIFIERS

Usable Frequency Range 1750 1910 MHz
Typical Frequency Range 1750-1780

Linear Gain 23 25 28 dB P

Small Sig nal Gain 22 27 29 dB P
Second Harmonic (Including

second harmonic trap)
Third Harmonic -40 dBc
Fourth Harmonic -45 dBc

Specification

Min. Typ. Max.

1850-1910

22 24 26 dB P

-35 dBc

Unit Condition

MHz
MHz

CDMA

Linear Output Power 29 dBm

28 dBm V

Linear Efficiency 33 37 %

6P

CDMA ACPR @ 1.25MHz -46 -44 dBc
Noise Power @ 80MHz Offset -139 dBm/Hz

CDMA

Linear Output Power 29 dBm
Linear Efficiency 30 35 %
CDMA ACPR @ 1.25MHz -46 -44 dBc
Noise Power @ 80MHz Offset -139 dBm/Hz

TDMA

Linear Efficiency 30 37 %
TDMA ACPR @ 30kHz Offset -31 -28 dBc
TDMA ACPR @ 60kHz Offset -52 -48 dBc
Input VSWR < 2:1
Output Load VSWR 10:1 No damage.
Stability 5:1
Junction to Case

Thermal Resistance

25 °C/W

T=25°C, VCC=3.4V, VPD=2.8V,
P

=29dBm, unless otherwise specified

OUT

Tuned Matching Network
Tuned Matching Network

OUT
OUT

≤-20dBm

IN

V

MODE

CC

OUT

V

MODE

=29dBm,V
=29dBm,V

≥2.5V

=3.0V

=16dBm

≤0.5V

MODE
MODE

≤0.5V
≥2.5V

2-188

Rev A19 010611

RF2157

Parameter

Min. Typ. Max.

Specification

Unit Condition

Power Supply

Power Supply Voltage 3.4 4.5 V
Idle Current 325 mA V

110 140 175 mA V

Current 7 9 mA VCC=3.4V,VPD=2.8V, V

V

PD

Turn On/Off Time 100 ns
Total Current (Power Down) 10 µAV

Low Voltage 0 0.2 V

V

PD

High Voltage 2.7 2.8 2.9 V

V

PD

MODE High Voltage 2.5 2.8 R
MODE Low Voltage 0 0.5

≤0.5V

MODE

=2.8V

MODE

No RF input power applied.

≤0.2V

PD

=1kΩ

1

MODE

=2.8 V

2

POWER AMPLIFIERS

Rev A19 010611

2-189

2

RF2157

Pin Function Description Interface Schematic

1GND

2 VPD1

3MODE

4 VPD2

POWER AMPLIFIERS

5GND

6NC

7RFOUT

8RFOUT

9GND

10 VCC
11 VCC1

12 VCC1
13 NC

14 NC

15 NC

16 RF IN

This pin is internally grounded to the die flag.
Power down control for first stage. When this pin is “low”, first stage cir-

cuits are shut off. When this pin is 2.8V, all first stage circuits are oper­ating normally. V

operate properly over all specified temperature and voltage ranges. A
dropping resi stor from a higher regulated voltage may be used to pro­vide the required 2.8V.

For full power operation, VMODE is set low. VMODE will reduce the
bias current by approximately 50% when set HIGH. Large Signal Gain
is reduced approximately 1.5dB at 29dBm P

reduced by approximately 6dB at lower temperatures. An external
series resistor is optional to limit the amount of current required.

Power down control for the second stage. When th is pin is “low”, the
second stage circuit is shut off. When this pini s 2.8V,the second stage
circuit is operating normally. V

amplifier to operate properly over all specified temperature and voltage
ranges. A dropping resistor from a higher regulated voltage may be
used to provide the required 2.8V. A 15pF high frequency bypass
capacitor is recommended.

Connect to ground plane via 15nH inductor. DC return for the second
stage bias circuit.

This pin is internally a no connection. It is recommended that this pin
be connected to either the RF outp u t matching network or to the
ground plane.

RF output and power supply for final stage. This is the unmatched col­lector output of the second stage. A DC block is required following the
matching components. The biasing may be provided via a parallel L-C
set for resonance at theoperating frequency of 1710MHz to 1910MHz.
It is important to select an inductor with very low DC resistance with a
1A current rating. Alternatively, shunt microstrip techniques are also
applicable and provide very low DC resistance. Low frequency bypass­ing is required for stability.

Same as pin 7. See pin 7.
This pin is internally grounded to the die flag.
Supply for bias reference and control circuits. High frequency bypass-

ing may be necessary.
Power supply for first stage and interstage match. Pins 11 and 12

should be connected by a common trace w here the pins contact the
printed circuit board.

Same as pin 11.
This pin is internally a no connection. It is recommended that this pin

be connected to either VCC1 or to the ground plane.
It is recommended that these pins be connected totheground plane for

improved isolation between RF IN (pin 16) and the VCC1 pins (pins 11
and 12).

It is recommended that these pins be connected totheground plane for
improved isolation between RF IN (pin 16) and the VCC1 pins (pins 11
and 12).

RF input. An external 15pF series capacitor is required as a DC block.
In addition, a series transmission line and shunt capa citor, 5pF, are
required to provide 2:1 VSWR.

requires a regulated 2.8V for the amplifier to

PD1

. Small Signal Gain is

OUT

requires a regulated 2.8V for the

PD

RF IN

From Bias
Network

15 pF

5pF

RF OUT

From
Bias
Stages

VCC1

GND1

Pkg

Base

2-190

GND

Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul­tiple vias. The pad should have a short thermal path to the ground
plane.

Rev A19 010611

Application Schemati c

Korea - CDMA

RF2157

Board

Bypassing for

V

and V

REG1

REG2

C27

R12

15 pF

R1

1kΩ

C13

15 pF

L4

15 nH

Matching network for

C14 (pF)C30 (pF) C1 (pF) L1 (nH)

2.210 4.7 12CDMA (Korea)

VREG

VMODE

Pins 1 and 9 areinternally grounded to the die flag.

R11

Jumper

Bias return

Jumper

optimum load impedance

C5

15 pF

2

3

4

RF IN

C1

4.7 pF

C14

2.2 pF

C24

4.7 pF

TL

4

15161

TL

2

RF OUT

Matching network for
optimum input return loss

14 13

TL

1

12 nH

1.5 pF

C3

15 pF

Interstage tuning for centering
frequency response

RF Choke - Bias inductor
for the amplifier interstage

C30

11 pF

12

11

10

98765

L1

C7

* L1 is a HighQ inductor (i.e., Coilcraft 0805HQ-series).
**C1 and C14 are HighQ capacitors (i.e., Johanson C-series).

CDMA (Korea)

10 nF

L2

8.2 nH

C6

15 pF

C4

15 pF

Transmission

Line Length

C8

Bypassing for V

VCC

C28

10 nF

TL

1

30-40 mils 150 mils 20-30mils

CC

TL

TL

2

3

TL

4

200 mils

2

POWER AMPLIFIERS

Rev A19 010611

2-191

RF2157

Application Schematic

US - CDMA

2

RF IN

Bypassing for

V

and V

REG1

REG2

C27

R12

15 pF

R1

1kΩ

C13

15 pF

L4

15 nH

Matching network for

C14 (pF)C30 (pF) C1 (pF) L1 (nH)

2.210 4.7 12CDMA (US)

VREG

VMODE

R11

Jumper

Jumper

POWER AMPLIFIERS

Bias return

optimum load impedance

Pins 1 and 9 areinternally grounded to the die flag.

Board

C5

15 pF

2

3

4

C1

4.7 pF

C14

2.2 pF

4.7 pF

TL

TL

RF OUT

C24

4

2

15161

TL

1

C3

15 pF

Matching network for
optimum input return loss

14 13

12

11

10

98765

L1

12 nH

C7

1.5 pF

Interstage tuning for centering
frequency response

RF Choke - Bias inductor
for the amplifier interstage

C30

9.1 pF

C6

15 pF

C4

15 pF

* L1 is a HighQ inductor (i.e., Coilcraft 0805HQ-series).
**C1 and C14 are HighQ capacitors

C8

10 nF

L2

8.2 nH

C28

10 nF

(i.e., Johanson C-series).

Transmission

Line Length

CDMA (US)

Bypassing for V

VCC

TL

1

30-40 mils 150 mils 20-30mils

CC

TL

2

TL

TL

3

4

200 mils

2-192

Rev A19 010611

Evaluation Board Schemati c

Korea - CDMA

(Download Bill of Materials from www.rfmd.com.)

RF IN

RF2157

P1

1

P1-1 VCC

GND

2

P2

1

P2-1 VREG

VMODEP2-2

2

Board

R12

R1

1kΩ

C14 (pF)C30 (pF) C1 (pF) L1 (nH)

L4

15 nH

2.210 4.7 12CDMA (Korea)

C27

15 pF

C13

15 pF

C26
1 µF

P2-1

P2-2

Pins 1 and 9 areinternally grounded to the die flag.

R11

Jumper

Jumper

C5

15 pF

2

3

4

C1

4.7 pF

C14

2.2 pF

C24

4.7 pF

TL

4

15161

TL

2

RF OUT

TL

15 pF

14 13

1

C3

12

11

10

98765

L1

12 nH

C7

1.5 pF

C30

11 pF

TL

C6

15 pF

C4

15 pF

* L1 is a HighQ inductor (i.e., Coilcraft 0805HQ-series).
**C1 and C14 are HighQ capacitors (i.e., Johanson C-series).

CDMA (Korea)

10 nF

L2

3

8.2 nH

C28

10 nFC24.7 uF

Transmission

Line Length

C8

C25

1uF

P1-1

TL

30-40 mils 150 mils 20-30mils

TL

1

2

2

POWER AMPLIFIERS

TL

TL

3

4

200 mils

Rev A19 010611

2-193

2

RF2157

P2-1

P2-2

Evaluation Board Schema t ic

US - CDMA

RF IN

C5

4.7 pF

TL

C24

4

15161

14 13

12

11

C26
1 µF

R11

Jumper

R12

Jumper

R1

1kΩ

C27

15 pF

15 pF

2

3

C30

9.1 pF

TL

C8

10 nF

L2

3

8.2 nH

C25

1uF

POWER AMPLIFIERS

P1

1

P1-1 VCC

2

P2

1

P2-1 VREG

2

Board

GND

VMODEP2-2

Pins 1 and 9 areinternally grounded to the die flag.

C14 (pF)C30 (pF) C1 (pF) L1 (nH)

L4

15 nH

2.210 4.7 12CDMA (US)

C13

15 pF

4

C1

4.7 pF

TL

2

C14

2.2 pF

RF OUT

TL

15 pF

10

98765

L1

1

12 nH

C7

1.5 pF

C3

C6

15 pF

2157400C

C4

15 pF

C28

10 nFC24.7 uF

* L1 is a HighQ inductor (i.e., Coilcraft 0805HQ-series).
**C1 and C14 are HighQ capacitors

(i.e., Johanson C-series).

Transmission

Line Length

CDMA (US)

TL

30-40 mils 150 mils 20-30mils

P1-1

TL

1

TL

2

TL

3

4

200 mils

2-194

Rev A19 010611

Evaluation Board Layout

Board Size 2" x 2"

Board Thickness 0.031”, Board Material FR-4, Multi-Layer

RF2157

2

POWER AMPLIFIERS

Rev A19 010611

2-195

2

RF2157

POWER AMPLIFIERS

2-196

Rev A19 010611